Abstract: A tool includes a mandrel and at least one gate. The mandrel includes a bore, and the mandrel is able to connect in-line with at least one sand control device of a bottom hole assembly such that the mandrel is coaxial with the at least one sand control device. The mandrel also includes a flow path configuration, such as, at least one flow path connecting the at least one sand control device to the bore, at least one flow path connecting the bore to at least two sand control devices, and at least one flow path connecting the bore to the at least one sand control device and to another device of the bottom hole assembly. The at least one gate has an initial position, and the at least one gate is configured to move from the initial position into a different position to control fluid flow.

Abstract: The present disclosure relates to methods and systems for chucking in substrate processing chambers. In one implementation, a method of chucking one or more substrates in a substrate processing chamber includes applying a chucking voltage to a pedestal. A substrate is disposed on a support surface of the pedestal. The method also includes ramping the chucking voltage from the applied voltage, detecting an impedance shift while ramping the chucking voltage, determining a corresponding chucking voltage at which the impedance shift occurs, and determining a refined chucking voltage based on the impedance shift and the corresponding chucking voltage.

Abstract: Methods and systems of detection of wafer de-chucking in a semiconductor processing chamber are disclosed. Methods and systems of interdiction are also disclosed to prevent hardware and wafer damage during semiconductor fabrication if and when de-chucking is detected. In one embodiment, a de-chucking detection method is based on measuring change in imaginary impedance of a plasma circuit, along with measuring one or both of reflected RF power and arc count. In another embodiment, a possibility of imminent de-chucking is detected even before complete de-chucking occurs by analyzing the signature change in imaginary impedance.

Abstract: Electrical gas lift valves and systems including electrical gas lift valves are provided.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: Exemplary methods of semiconductor processing may include forming a plasma of a carbon-containing precursor in a processing region of a semiconductor processing chamber. The methods may include depositing a carbon-containing material on a substrate housed in the processing region of the semiconductor processing chamber. The methods may include halting a flow of the carbon-containing precursor into the processing region of the semiconductor processing chamber. The methods may include contacting the carbon-containing material with plasma effluents of an oxidizing material. The methods may include forming volatile materials from a surface of the carbon-containing material.

Abstract: A processing system comprises a chamber body, a substrate support and a lid assembly. The substrate support is located in the chamber body and comprises a first electrode. The lid assembly is positioned over the chamber body and defines a processing volume. The lid assembly comprises a faceplate, a second electrode positioned between the faceplate and the chamber body, and an insulating member positioned between the second electrode and the processing volume. A power supply system is coupled to the first electrode and the faceplate and is configured to generate a plasma in the processing volume.

Abstract: A tool includes a mandrel and at least one gate. The mandrel includes a bore, and the mandrel is able to connect in-line with at least one sand control device of a bottom hole assembly such that the mandrel is coaxial with the at least one sand control device. The mandrel also includes a flow path configuration, such as, at least one flow path connecting the at least one sand control device to the bore, at least one flow path connecting the bore to at least two sand control devices, and at least one flow path connecting the bore to the at least one sand control device and to another device of the bottom hole assembly. The at least one gate has an initial position, and the at least one gate is configured to move from the initial position into a different position to control fluid flow.

Abstract: Implementations of the present disclosure generally relate to hardmask films and methods for depositing hardmask films. More particularly, implementations of the present disclosure generally relate to tungsten carbide hardmask films and processes for depositing tungsten carbide hardmask films. In one implementation, a method of forming a tungsten carbide film is provided. The method comprises forming a tungsten carbide initiation layer on a silicon-containing surface of a substrate at a first deposition rate. The method further comprises forming a tungsten carbide film on the tungsten carbide initiation layer at a second deposition rate, wherein the second deposition rate is greater than the first deposition rate.

Abstract: Exemplary semiconductor structures and processing methods may include forming a first portion of a first semiconductor layer characterized by a first etch rate for an etch treatment, forming a second portion of the first semiconductor layer characterized by a second etch rate that is less than the first etch rate for the etch treatment, and forming a third portion of the first semiconductor layer characterized by a third etch rate that is greater than the second etch rate. The processing methods may further include etching an opening through the first semiconductor layer, where the opening has a height and a width, and where the opening is characterized by a variation in the width between a midpoint of the height of the opening and an endpoint of the opening that is less than or about 5 ?.

Abstract: Examples disclosed herein relate to a method and apparatus for cleaning and repairing a substrate support having a heater disposed therein. A method includes (a) cleaning a surface of a substrate support having a bulk layer, the substrate support is disposed in a processing environment configured to process substrates. The cleaning process includes forming a plasma at a high temperature from a cleaning gas mixture having a fluorine containing gas and oxygen. The method includes (b) removing oxygen radicals from the processing environment with a treatment plasma formed from a treatment gas mixture. The treatment gas mixture includes the fluorine containing gas. The method further includes (c) repairing an interface of the substrate support and the bulk layer with a post-treatment plasma. The post-treatment plasma is formed from a post-treatment gas mixture including a nitrogen containing gas. The high temperature is greater than or equal to about 500 degrees Celsius.

Abstract: A valve assembly that can be deployed in a subterranean well that includes a valve adapted to selectively isolate a region of the subterranean well, and a separating apparatus. The separating apparatus may further include at least one member being formed from a functional material and at least two sleeves connected by the at least one member.

Abstract: Embodiments of the present disclosure generally relate to methods for cleaning a chamber comprising introducing a gas to a processing volume of the chamber, providing a first radiofrequency (RF) power having a first frequency of about 40 MHz or greater to a lid of the chamber, providing a second RF power having a second frequency to an electrode disposed in a substrate support within the processing volume, and removing at least a portion of a film disposed on a surface of a chamber component of the chamber. The second frequency is about 10 MHz to about 20 MHz.

Abstract: A system may include a main line for delivering a first gas, and a sensor for measuring a concentration of a precursor in the first gas delivered through the main line. The system may further include first and second sublines for providing fluid access to first and second processing chambers, respectively. The first subline may include a first flow controller for controlling the first gas flowed through the first subline. The second subline may include a second flow controller for controlling the first gas flowed through the second subline. A delivery controller may be configured to control the first and second flow controllers based on the measured concentration of the precursor to deliver a first mixture of the first gas and a second gas and a second mixture of the first and second gases into the first and second semiconductor processing chambers, respectively.

Abstract: Exemplary semiconductor structures and processing methods may include forming a first portion of a first semiconductor layer characterized by a first etch rate for an etch treatment, forming a second portion of the first semiconductor layer characterized by a second etch rate that is less than the first etch rate for the etch treatment, and forming a third portion of the first semiconductor layer characterized by a third etch rate that is greater than the second etch rate. The processing methods may further include etching an opening through the first semiconductor layer, where the opening has a height and a width, and where the opening is characterized by a variation in the width between a midpoint of the height of the opening and an endpoint of the opening that is less than or about 5 ?.

Abstract: Exemplary processing methods may include forming a plasma of a cleaning precursor in a remote region of a semiconductor processing chamber. The methods may include flowing plasma effluents of the cleaning precursor into a processing region of the semiconductor processing chamber. The methods may include contacting a substrate support with the plasma effluents for a first period of time. The methods may include lowering the substrate support from a first position to a second position while continuing to flow plasma effluents of the cleaning precursor. The methods may include cleaning the processing region of the semiconductor processing chamber for a second period of time.

Abstract: An apparatus configured to construct an email message addressed to a plurality of recipients. The apparatus is further configured to apply a cipher and a first encryption key to a first portion of the email message, which will be viewable by each of the recipients. The apparatus applies the cipher and a second encryption key to a second portion of the email message, which will be viewable by a first recipient from among the recipients. The apparatus further applies the cipher and a third encryption key to a third portion of the mail message, which will be viewable by a second recipient from among the recipients. The apparatus then transmits the email message to a server.

Abstract: Semiconductor processing systems and method are described that may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber, where the substrate processing region includes an electrostatic chuck. The methods may further include depositing a seasoning layer on the electrostatic chuck from the deposition precursors to form a seasoned electrostatic chuck. The seasoning layer may be characterized by a dielectric constant greater than or about 3.5. The methods may still further include applying a voltage to the seasoned electrostatic chuck of greater than or about 500 V. The seasoned electrostatic chuck may be characterized by a leakage current of less than or about 25 mA when the voltage is applied.

Abstract: Embodiments of the present disclosure generally relate to methods of depositing carbon film layers greater than 3,000 ? in thickness over a substrate and surface of a lid of a chamber using dual frequency, top, sidewall and bottom sources. The method includes introducing a gas to a processing volume of a chamber. A first radiofrequency (RF) power is provided having a first frequency of about 40 MHz or greater to a lid of the chamber. A second RF power is provided having a second frequency to a bias electrode disposed in a substrate support within the processing volume. The second frequency is about 10 MHz to about 40 MHz. An additional third RF power is provided having lower frequency of about 400 kHz to about 2 MHz to the bias electrode.

Abstract: Exemplary methods of treating a chamber may include delivering a cleaning precursor to a remote plasma unit. The methods may include forming a plasma of the cleaning precursor. The methods may include delivering plasma effluents of the cleaning precursor to a processing region of a semiconductor processing chamber. The processing region may be defined by one or more chamber components. The one or more chamber components may include an oxide coating. The methods may include halting delivery of the plasma effluents. The methods may include treating the oxide coating with a hydrogen-containing material delivered to the processing region subsequent halting delivery of the plasma effluents.