Abstract: In an embodiment, a method of network deployment involves at a cloud server, receiving network device information of a network device when the network device is connected into a network, and at the cloud server, automatically performing network topology deviation detection for the network device based on a planned network design, the network device information, and port type information of a network port of the network device through which the network device is connected to the network.

Abstract: In an embodiment, a method of network deployment involves at a cloud server, receiving network device information of a network device when the network device is connected into a network, and at the cloud server, automatically performing network topology deviation detection for the network device based on a planned network design, the network device information, and port type information of a network port of the network device through which the network device is connected to the network.

Abstract: Embodiments of a device and method are disclosed. In an embodiment, a method for network coverage management of a network deployed at a customer site involves at a cloud server connected to the network, receiving network coverage information of the network deployed at the customer site from wireless sensors deployed at the customer site and at the cloud server, automatically determining a service-level agreement (SLA) network coverage metric based on the network coverage information.

Abstract: Embodiments of a device and method are disclosed. In an embodiment, a method for network coverage management of a network deployed at a customer site involves at a cloud server connected to the network, receiving network coverage information of the network deployed at the customer site from wireless sensors deployed at the customer site and at the cloud server, automatically determining a service-level agreement (SLA) network coverage metric based on the network coverage information.

Abstract: In an embodiment, a method of network deployment involves at a cloud server, determining a planned network design for a network to be deployed at a customer site, at the cloud server, receiving network device information and location information of a network device after the network device is deployed at the customer site, and at the cloud server, automatically performing network deployment deviation detection for the network device based on the planned network design and the network device information and the location information of the network device.

Abstract: In accordance with various embodiments, a method is performed including determining a plurality of network reputation scores for a respective plurality of network subsets of a fabric network environment and determining a reputation policy for traffic traversing the fabric network environment. The method includes routing traffic traversing the fabric network environment according to the reputation policy and the plurality of network reputation scores.

Abstract: Embodiments of a device and method are disclosed. In an embodiment, a method of network availability management of a network deployed at a customer site involves at a cloud server connected to the network, receiving network availability information of the network deployed at the customer site from at least one wireless sensor deployed at the customer site, at the cloud server, receiving wireless communications channel quality information of the network deployed at the customer site, and at the cloud server, automatically determining a service-level agreement (SLA) network availability metric based on the network availability information and the wireless communications channel quality information.

Abstract: Embodiments of a device and method are disclosed. In an embodiment, a method of network deployment involves at a cloud server, determining a planned network design for a network to be deployed at a customer site, at the cloud server, receiving network device information and location information of a network device after the network device is deployed at the customer site, and at the cloud server, automatically performing network deployment deviation detection for the network device based on the planned network design and the network device information and the location information of the network device.

Abstract: Embodiments of a device and method are disclosed. In an embodiment, a method for network capacity management of a network deployed at a customer site involves at a cloud server connected to the network, receiving network capacity information of the network deployed at the customer site from wireless sensors deployed at the customer site and at the cloud server, automatically determining a service-level agreement (SLA) network capacity metric based on the network capacity information.

Abstract: In one embodiment, a network functions virtualization infrastructure can be managed in a decentralized fashion. A front end can receive a request to provision a virtualized network function. The front end can create service descriptors for the request according to the virtualized network function, the service descriptors comprising a hierarchy of information elements organized based on distributed back-end agents operable to provision and manage the virtualized network function. The front end can store the service descriptors in a distributed data store.

Abstract: Methods of forming 2D metal chalcogenide films using laser-assisted atomic layer deposition are disclosed. A direct-growth method includes: adhering a layer of metal-bearing molecules to the surface of a heated substrate; then reacting the layer of metal-bearing molecules with a chalcogenide-bearing radicalized precursor gas delivered using a plasma to form an amorphous 2D film of the metal chalcogenide; then laser annealing the amorphous 2D film to form a crystalline 2D film of the metal chalcogenide, which can have the form MX or MX2, where M is a metal and X is the chalcogenide. An indirect growth method that includes forming an MO3 film is also disclosed.

Abstract: Systems and methods for triggering service activation include starting a vCPE instance in response to a request for a service, instantiating a service container for the requested service and starting the service in the service container, installing a fast path entry for the service container in a local bridge table, detecting an idle timeout of the service and labeling the local bridge table entry for the corresponding service container as inactive, notifying a cloud services manager that the service container is inactive, and removing the service container.

Abstract: In accordance with various embodiments, a method is performed including determining a plurality of network reputation scores for a respective plurality of network subsets of a fabric network environment and determining a reputation policy for traffic traversing the fabric network environment. The method includes routing traffic traversing the fabric network environment according to the reputation policy and the plurality of network reputation scores.

Abstract: Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably matched to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layer after deposition by ALD. In preferred embodiments, a silicon substrate is overlaid with an AlN nucleation layer and laser annealed. Thereafter a GaN device layer is applied over the AlN layer by an ALD process and then laser annealed. In a further example embodiment, a transition layer is applied between the GaN device layer and the AlN nucleation layer. The transition layer comprises one or more different transition material layers each comprising a AlxGa1-xN compound wherein the composition of the transition layer is continuously varied from AlN to GaN.

Abstract: Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

Abstract: In one embodiment, a network functions virtualization infrastructure can be managed in a decentralized fashion. A front end can receive a request to provision a virtualized network function. The front end can create service descriptors for the request according to the virtualized network function, the service descriptors comprising a hierarchy of information elements organized based on distributed back-end agents operable to provision and manage the virtualized network function. The front end can store the service descriptors in a distributed data store.

Abstract: Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably matched to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layer after deposition by ALD. In preferred embodiments, a silicon substrate is overlaid with an AlN nucleation layer and laser annealed. Thereafter a GaN device layer is applied over the AlN layer by an ALD process and then laser annealed. In a further example embodiment, a transition layer is applied between the GaN device layer and the AlN nucleation layer. The transition layer comprises one or more different transition material layers each comprising a AlxGa1-xN compound wherein the composition of the transition layer is continuously varied from AlN to GaN.

Abstract: Methods of forming 2D metal chalcogenide films using laser-assisted atomic layer deposition are disclosed. A direct-growth method includes: adhering a layer of metal-bearing molecules to the surface of a heated substrate; then reacting the layer of metal-bearing molecules with a chalcogenide-bearing radicalized precursor gas delivered using a plasma to form an amorphous 2D film of the metal chalcogenide; then laser annealing the amorphous 2D film to form a crystalline 2D film of the metal chalcogenide, which can have the form MX or MX2, where M is a metal and X is the chalcogenide. An indirect growth method that includes forming an MO3 film is also disclosed.

Abstract: Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably matched to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layer after deposition by ALD. In preferred embodiments, a silicon substrate is overlaid with an AlN nucleation layer and laser annealed. Thereafter a GaN device layer is applied over the AlN layer by an ALD process and then laser annealed. In a further example embodiment, a transition layer is applied between the GaN device layer and the AlN nucleation layer. The transition layer comprises one or more different transition material layers each comprising a AlxGa1-xN compound wherein the composition of the transition layer is continuously varied from AlN to GaN.

Abstract: Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.