Abstract: Systems and methods for triggering service activation include starting a vCPE instance in response to a request for a service, instantiating a service container for the requested service and starting the service in the service container, installing a fast path entry for the service container in a local bridge table, detecting an idle timeout of the service and labeling the local bridge table entry for the corresponding service container as inactive, notifying a cloud services manager that the service container is inactive, and removing the service container.

Abstract: Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

Abstract: Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

Abstract: Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

Abstract: Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably matched to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layer after deposition by ALD. In preferred embodiments, a silicon substrate is overlaid with an AlN nucleation layer and laser annealed. Thereafter a GaN device layer is applied over the AlN layer by an ALD process and then laser annealed. In a further example embodiment, a transition layer is applied between the GaN device layer and the AlN nucleation layer. The transition layer comprises one or more different transition material layers each comprising a AlxGa1-xN compound wherein the composition of the transition layer is continuously varied from AlN to GaN.

Abstract: Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

Abstract: Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably selected to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layers after deposition by ALD. In preferred embodiments a silicon substrate is overlaid with an AIN nucleation layer and laser annealed. Thereafter a GaN device layers is applied over the AIN layer by an ALD process and then laser annealed. In a further example embodiment a transition layer is applied between the GaN device layer and the AIN nucleation layer. The transition layer comprises one or more different transition material layers each comprising a AlxGa1-x compound wherein the composition of the transition layer is continuously varied from AIN to GaN.

Abstract: Methods of forming 2D metal chalcogenide films using laser-assisted atomic layer deposition are disclosed. A direct-growth method includes: adhering a layer of metal-bearing molecules to the surface of a heated substrate; then reacting the layer of metal-bearing molecules with a chalcogenide-bearing radicalized precursor gas delivered using a plasma to form an amorphous 2D film of the metal chalcogenide; then laser annealing the amorphous 2D film to form a crystalline 2D film of the metal chalcogenide, which can have the form MX or MX2, where M is a metal and X is the chalcogenide. An indirect growth method that includes forming an MO3 film is also disclosed.

Abstract: Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably selected to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layers after deposition by ALD. In preferred embodiments a silicon substrate is overlaid with an AIN nucleation layer and laser annealed. Thereafter a GaN device layers is applied over the AIN layer by an ALD process and then laser annealed. In a further example embodiment a transition layer is applied between the GaN device layer and the AIN nucleation layer. The transition layer comprises one or more different transition material layers each comprising a AlxGa1-x compound wherein the composition of the transition layer is continuously varied from AIN to GaN.

Abstract: Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

Abstract: Systems and methods of code evaluation for in-order processing are disclosed. In an embodiment, the method includes identifying a first instruction having multiple execution source paths. The method also includes generating a first execution path model identifying an execution order of multiple instructions based on a first condition and generating a second execution path model identifying an execution order of a second instruction based on a second condition. The method includes evaluating at least one of the execution path models to identify a hazard condition.

Abstract: At least one example embodiment discloses a method of controlling communications between first and second user equipments (UEs) by a base station in a network. The method includes obtaining an indication, the indication indicating if the first and second UEs are within a communication range of each other and controlling a direct communication link between the first and second UEs if the first and second UEs are within a communication range of each other. The controlling includes allocating at least a first portion of an uplink channel of the network to the direct communication link.

Abstract: In a network system for transporting GFP-encapsulated Fibre Channel/FICON data across a SONET/SDH transport network between two Fibre Channel/FICON ports, a transport interface for one Fibre Channel/FICON port intelligently allocates the amount of buffers for receiving Fibre Channel/FICON data from the other Fibre Channel/FICON port by determining the latency of travel across the SONET/SDH transport network. The first transport interface inserts a special latency instruction message into the Fibre Channel/FICON data before encapsulation in a GFP frame. After transport across the SONET/SDH network, the receiving second transport interface immediately sends the special latency instruction message back across the SONET/SDH transport network to the first transport interface which times the return of the special latency instruction message. From the time interval, the first transport interface can determine the latency of the SONET/SDH transport network and allocates the amount of buffers appropriately.

Abstract: In network systems for transporting GFP-encapsulated FICON frames across a SONET/SDH transport network between FICON ports, the transport interfaces for the FICON ports operate to drop duplicate and out-of-order frames transported across the SONET/SDH network. The transmitting transport interface inserts a sequence number incremented with each FICON frame into said one or more transport frames, whereby the sequence number is used as an index for determining duplicate and out-of-order frames after transport over said SONET/SDH network. The receiving transport interface compares sequence numbers with each FICON frame to determine duplicate and out-of-order FICON frames, drops the duplicate and out-of-order FICON frames; and sends the balance of the compared FICON frames to the receiving FICON port.

Abstract: Systems and methods of code evaluation for in-order processing are disclosed. In an embodiment, the method includes identifying a first instruction having multiple execution source paths. The method also includes generating a first execution path model identifying an execution order of multiple instructions based on a first condition and generating a second execution path model identifying an execution order of a second instruction based on a second condition. The method includes evaluating at least one of the execution path models to identify a hazard condition.

Abstract: A method and system for flow control of GFP-encapsulated Fiber Channel frames over SONET/SDH transport networks is described. Transport interfaces, in the form of port cards, monitor any switch-over or error in the SONET/SDH transport network responsive to GFP out of synchronization signals; and transmit Fiber Channel Ordered Sets indicative of non-operation to it associated Fiber Channel port so that the Fiber Channel port performs link initialization and buffer credit recovery procedures with its counterpart Fiber Channel port across the SONET/SDH transport network. This speeds the recovery of the link between the two Fiber Channel ports.

Abstract: A method and system for communicating state information between a local device and a remote device across a transport network is disclosed. Each of the local and remote devices operate independently from one another and at least one of the devices is configured for one-way traffic protection. The method includes receiving a protection message comprising K-bytes from one of the local and remote devices at the other of the local and remote devices and determining based on the received K-bytes, if there is a change in state at one of the devices. If a change in state is detected, a message is sent indicating the change in state from one of the local and remote devices to the other of the local and remote devices.

Abstract: A method and system for flow control of GFP-encapsulated client data frames over SONET/SDH transport networks is described. Transport interfaces, in the form of port cards, have FIFO buffers for receiving the GFP frames. In acknowledgment of the received frames, a transmitting transport interface receives an acknowledgement in form of a returned frame sequence number tag along with the available capacity in bytes of the buffer of the receiving transport interface. With a continuous update of buffer capacity and tracking the number of bytes in transit to the receiving transport interface, the transmitting transport interface maximizes the utilization of the channel through the SONET/SDH transport network, even with dropped frames or dropped acknowledgment tags.

Abstract: In a network system for transporting GFP-encapsulated Fibre Channel/FICON data across a SONET/SDH transport network between two Fibre Channel/FICON ports, a transport interface for one Fibre Channel/FICON port intelligently allocates the amount of buffers for receiving Fibre Channel/FICON data from the other Fibre Channel/FICON port by determining the latency of travel across the SONET/SDH transport network. The first transport interface inserts a special latency instruction message into the Fibre Channel/FICON data before encapsulation in a GFP frame. After transport across the SONET/SDH network, the receiving second transport interface immediately sends the special latency instruction message back across the SONET/SDH transport network to the first transport interface which times the return of the special latency instruction message. From the time interval, the first transport interface can determine the latency of the SONET/SDH transport network and allocates the amount of buffers appropriately.

Abstract: In network systems for transporting GFP-encapsulated FICON frames across a SONET/SDH transport network between FICON ports, the transport interfaces for the FICON ports operate to drop duplicate and out-of-order frames transported across the SONET/SDH network. The transmitting transport interface inserts a sequence number incremented with each FICON frame into said one or more transport frames, whereby the sequence number is used as an index for determining duplicate and out-of-order frames after transport over said SONET/SDH network. The receiving transport interface compares sequence numbers with each FICON frame to determine duplicate and out-of-order FICON frames, drops the duplicate and out-of-order FICON frames; and sends the balance of the compared FICON frames to the receiving FICON port.