Abstract: A tri-layer thin film magnetoresistive device using doped perovskite manganate thin films as ferromagnetic elements, wherein a current is transported through the tri-layer structure, is disclosed. A large magnetoresistance change of about a factor of two is obtained in a low magnetic field, less than 150 Oe, which is close to the coercivity of the material of the elements. This device demonstrates that low-field spin-dependent transport in the manganates can be accomplished and that the magnitude of the resulting magnetoresistance is suitable for magnetoresistive field sensor applications.

Abstract: Improved cermets having superior properties comprising a ferromagnetic metal and an insulator. By controlling process conditions, cermets having high magnetization and high coercivity as well as chemical stability, wear resistance and corrosion resistance are prepared. The cermets of this invention find particular utility as high density recording media.