Abstract: A method includes forming first integrated circuits on a front side of a semiconductor substrate of a first device die, forming a trench capacitor extending from a backside of the semiconductor substrate into the semiconductor substrate, and forming a first through-via and a second through-via penetrating through the semiconductor substrate. The trench capacitor is electrically coupled between the first through-via and the second through-via. A second device die is bonded to the first die. The second device die includes second integrated circuits, and power nodes of the second integrated circuits are electrically coupled to the first through-via and the second through-via.

Abstract: An embodiment is a device including a first die and a substrate including a first surface and a second surface opposite the first surface. The device also includes an active device on the first surface of the substrate. The device also includes a first interconnect structure on the first surface of the substrate. The device also includes a through substrate via extending through the first interconnect structure and the substrate to the second surface of the substrate, the through substrate via being electrically coupled to metallization patterns in the first interconnect structure. The device also includes one or more material-filled trench structures extending from the second surface of the substrate into the substrate, the one or more material-filled trench structures being electrically isolated from the through substrate via.

Abstract: Smile treatment planning systems and methods are described herein. One method for adjusting an image of a smile may generally comprise receiving a three-dimensional (3D) digital model of a dental arch of a patient, receiving a digital facial image of the patient which includes an image of one or more teeth of the patient when smiling, registering the 3D digital model to the one or more teeth of the patient from the digital facial image, correcting the 3D digital model for scale and distortion to create a corrected 3D digital model, and overlaying the corrected 3D digital model onto the digital facial image.

Abstract: A method includes forming first nanostructures over a first region of a substrate; forming second nanostructures over a second region of the substrate; forming first gate structures around the first nanostructures; replacing the second nanostructures with isolation regions; and forming a seal ring over the substrate, wherein the seal ring is between the first region and the second region.

Abstract: The present disclosure relates to antibodies and antibody conjugates, for instance antibody drug conjugates, with binding specificity for receptor tyrosine kinase orphan receptor 1 (ROR1) and its isoforms and homologs, and compositions comprising the antibodies or antibody conjugates, including pharmaceutical compositions. Also provided are methods of producing the antibodies and antibody conjugates and compositions thereof as well as methods of using the antibodies and antibody conjugates and compositions thereof, such as in therapeutic and diagnostic methods.

Abstract: A method includes forming a device die including forming integrated circuits on a semiconductor substrate; and forming a thermally conductive pillar extending into the semiconductor substrate. A cooling medium is attached over and contacting the semiconductor substrate to form a package, wherein the cooling medium is thermally coupled to the thermally conductive pillar.

Abstract: A method includes receiving a workpiece including a device layer disposed on a frontside of the workpiece, forming a frontside interconnect structure over the device layer, attaching a carrier substrate over the frontside interconnect structure, and etching from a backside of the workpiece to form first trenches and second trenches. The first trenches extend partially into the carrier substrate for a distance less than the second trenches. The method also includes forming a plurality of first conductive features in the first trenches and a plurality of second conductive features in the second trenches, forming a backside interconnect structure covering the first conductive features and the second conductive features, and thinning the carrier substrate from the frontside of the workpiece to expose the second conductive features. The first conductive features remain partially embedded in the carrier substrate.

Abstract: Interconnect structures for front-to-front stacked chips/dies and methods of fabrication thereof are disclosed herein. An exemplary system on integrated circuit (SoIC) includes a first die that is front-to-front bonded with a second die, for example, by bonding a first topmost metallization layer of a first frontside multilayer interconnect of the first die to a second topmost metallization layer of a second frontside multilayer interconnect of the second die. A through via extends partially through the first frontside multilayer interconnect of the first die, through a device layer of the first die, through a backside power rail of the first die, and through a carrier substrate. The backside power rail is between the carrier substrate and the device layer, and the backside power rail may be a portion of a backside multilayer interconnect of the first die. The through via may be connected to a redistribution layer (RDL) structure.

Abstract: This invention discloses an intelligent water detection tool for horizontal wells, including a water detection instrument, and also including a floating-diving component for driving the movement of the water detection instrument, a buoyancy device connected to the water detection instrument, and a buoyancy adjustment component for adjusting the water displacement volume of the buoyancy device. This invention provides an intelligent water detection tool for horizontal wells, using a completely different technical approach to achieve floating-diving style water detection operations in horizontal well sections, aiming to reduce tool friction and facilitate easy passage through horizontal sections.

Abstract: A method includes forming a first multilayer interconnect structure over a first side of a device layer, forming a first portion of a second multilayer interconnect structure under a second side of the device layer, forming a trench that extends through the second dielectric layer, the device layer, and the first dielectric layer, forming a conductive structure in the trench, and forming a second portion of the second multilayer interconnect structure under the first portion of the second multilayer interconnect structure. The second portion of the second multilayer interconnect structure includes patterned metal layers disposed in a third dielectric layer, and wherein one or more of the patterned metal layers are in electrical connection with the conductive structure.

Abstract: The present disclosure relates to antibodies and antibody conjugates, for instance antibody drug conjugates, with binding specificity for receptor tyrosine kinase orphan receptor 1 (ROR1) and its isoforms and homologs, and compositions comprising the antibodies or antibody conjugates, including pharmaceutical compositions. Also provided are methods of producing the antibodies and antibody conjugates and compositions thereof as well as methods of using the antibodies and antibody conjugates and compositions thereof, such as in therapeutic and diagnostic methods.

Abstract: An integrated semiconductor device is provided. The integrated semiconductor device includes a first semiconductor structure having a first IC, and a second semiconductor structure stacked above the first semiconductor structure and having a second IC. The second semiconductor structure has a first surface facing the first semiconductor structure and a second surface facing away from the first semiconductor structure. The integrated semiconductor device also includes a thermal dissipation structure having a first portion partially through the first IC and a second portion fully through the second semiconductor structure and exposed at the second surface of the second semiconductor structure. The second portion may be outside of the second IC.

Abstract: The present invention belongs to the technical field of liquid crystal materials, and in particular relates to a liquid crystal composition with good frequency dependence and a liquid crystal display element or liquid crystal display containing the liquid crystal composition. The liquid crystal composition of the present invention comprises a compound represented by Formula I, a compound represented by Formula II and a compound represented by Formula III, wherein the mass percentage content of the compound represented by Formula I is not less than 30%. The liquid crystal composition provided by the present invention has an appropriate optical anisotropy, an appropriate dielectric anisotropy, especially a relatively low rotational viscosity, a good low-temperature mutual solubility and a good reliability, especially good frequency dependence.

Abstract: The present invention belongs to the technical field of liquid crystal materials, and in particular relates to a negative liquid crystal composition and a liquid crystal display element or liquid crystal display containing the liquid crystal composition. The present invention discloses a negative dielectric nematic liquid crystal composition, comprising a compound represented by Formula I, one or more compounds represented by Formula II, and one or more compounds represented by Formula III. The liquid crystal composition has a relatively low rotational viscosity (?1), a high clearing point (Cp), a good solubility and a high stability to heat and light (VHR) on the basis of maintaining an appropriate optical anisotropy (?n), and can be used for developing a liquid crystal display element or liquid crystal display with a low cell thickness, a wide temperature for display, and a fast response.

Abstract: Some implementations described herein include systems and techniques for fabricating a multi-dimension through silicon via structure in a three-dimensional integrated circuit device. The multi-dimension through silicon via structure includes a first columnar structure having a first width and a second columnar structure including a second width that is greater relative to the first width. The first columnar structure may include a low electrical capacitance and be configured for electrical signaling within the three-dimensional integrated circuit device. The second columnar structure may be configured to provide power to integrated circuitry of the three-dimensional integrated circuit device and also be configured to conduct heat through the three-dimensional integrated circuit device for thermal management of the three-dimensional integrated circuit device. Additionally, a pattern including the second columnar structure may be used for alignment purposes.

Abstract: An integrated circuit (IC) device includes a substrate. The IC device includes a multi-layer interconnect structure disposed over a first side of the substrate. The multi-layer interconnect structure includes a plurality of metal layers. The IC device includes a first portion of a through-substrate via (TSV) disposed over the first side of the substrate. The first portion of the TSV includes a plurality of conductive components belonging to the plurality of metal layers of the multi-layer interconnect structure. The IC device includes a second portion of the TSV that extends vertically through the substrate from the first side to a second side opposite the first side. The second portion of the TSV is electrically coupled to the first portion of the TSV.

Abstract: The present application relates to a substrate, an LED light source assembly and manufacturing methods therefor. The substrate includes a first substrate and a second substrate which are arranged in a stacked manner. Electrode soldering regions on the front side of the first substrate and corresponding first conductive regions on the back side of the first substrate are electrically connected; and second conductive regions on the front side of the second substrate and corresponding third conductive regions on the back side of the second substrate are electrically connected, where the corresponding first conductive regions and the corresponding second conductive regions are electrically connected.

Abstract: The present invention belongs to the technical field of liquid crystal materials, and in particular relates to a liquid crystal composition with good frequency dependence and a liquid crystal display element or liquid crystal display containing the liquid crystal composition. The liquid crystal composition of the present invention comprises a compound represented by Formula I, a compound represented by Formula II and a compound represented by Formula III, wherein the mass percentage content of the compound represented by Formula I is not less than 30%. The liquid crystal composition provided by the present invention has an appropriate optical anisotropy, an appropriate dielectric anisotropy, especially a relatively low rotational viscosity, a good low-temperature mutual solubility and a good reliability, especially good frequency dependence.

Abstract: The present invention belongs to the technical field of liquid crystal materials, and in particular relates to a liquid crystal composition and a liquid crystal display element or liquid crystal display containing the liquid crystal composition. The liquid crystal composition of the present invention is characterized in that the liquid crystal composition comprises more than or equal to 30% of a compound represented by Formula I, and also comprises one or more compounds represented by Formula II and one or more compounds represented by Formula III. The liquid crystal composition of the present invention has a high refractive index, a high clearing point and also a low rotational viscosity, and is mainly used for the display of a projector with a relatively high working temperature and a low cell thickness.

Abstract: The present invention belongs to the technical field of liquid crystal materials, and in particular relates to a negative liquid crystal composition and a liquid crystal display element or liquid crystal display containing the liquid crystal composition. The present invention discloses a negative dielectric nematic liquid crystal composition, comprising a compound represented by Formula I, one or more compounds represented by Formula II, and one or more compounds represented by Formula III. The liquid crystal composition has a relatively low rotational viscosity (?1), a high clearing point (Cp), a good solubility and a high stability to heat and light (VHR) on the basis of maintaining an appropriate optical anisotropy (?n), and can be used for developing a liquid crystal display element or liquid crystal display with a low cell thickness, a wide temperature for display, and a fast response.