Patents by Inventor Gang Xue

Gang Xue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10891873
    Abstract: A method and apparatus for monitoring learning and an electronic device are provided. The method for monitoring learning includes: acquiring a class image of a class student; recognizing the class image to acquire characteristic data of the class student, where the characteristic data includes at least one of the following: facial characteristic data of the class student, visual characteristic data of the class student, and body characteristic data of the class student; and determining, based on the characteristic data of the class student, a class status of the class student. The listening status of a student learning via a computer and the Internet in a class can be effectively and accurately monitored, and an effective reference is provided for subsequent learning and teaching to further improve the learning or teaching process.
    Type: Grant
    Filed: December 19, 2019
    Date of Patent: January 12, 2021
    Assignee: BEIJING YIZHEN XUESI EDUCATION TECHNOLOGY CO., LTD.
    Inventors: Guowei Fu, Gang Xue, Yuemei Li, Shan An, Mingxiu Meng, Yujia Song, Yangang Feng, Xu Meng
  • Publication number: 20200126444
    Abstract: A method and apparatus for monitoring learning and an electronic device are provided. The method for monitoring learning includes: acquiring a class image of a class student; recognizing the class image to acquire characteristic data of the class student, where the characteristic data includes at least one of the following: facial characteristic data of the class student, visual characteristic data of the class student, and body characteristic data of the class student; and determining, based on the characteristic data of the class student, a class status of the class student. The listening status of a student learning via a computer and the Internet in a class can be effectively and accurately monitored, and an effective reference is provided for subsequent learning and teaching to further improve the learning or teaching process.
    Type: Application
    Filed: December 19, 2019
    Publication date: April 23, 2020
    Inventors: Guowei FU, Gang XUE, Yuemei LI, Shan AN, Mingxiu MENG, Yujia SONG, Yangang FENG, Xu MENG
  • Patent number: 10153269
    Abstract: A low dynamic resistance, low capacitance diode of a semiconductor device includes a heavily-doped n-type substrate. A lightly-doped n-type layer 1 micron to 5 microns thick is disposed on the n-type substrate. A lightly-doped p-type layer 3 microns to 8 microns thick is disposed on the n-type layer. The low dynamic resistance, low capacitance diode, of the semiconductor device includes a p-type buried layer, with a peak dopant density above 1×1017 cm?3, extending from the p-type layer through the n-type layer to the n-type substrate. The low dynamic resistance, low capacitance diode also includes an n-type region disposed in the p-type layer, extending to a top surface of the p-type layer.
    Type: Grant
    Filed: August 17, 2017
    Date of Patent: December 11, 2018
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Andrew D. Strachan, Alexei Sadovnikov, Gang Xue, Dening Wang
  • Patent number: 9865584
    Abstract: A contact array optimization scheme for ESD devices. In one embodiment, contact apertures patterned through a pre-metal dielectric layer over active areas may be selectively modified in size, shape, placement and the like, to increase ESD protection performance, e.g., such as maximizing the transient current density, etc., in a standard ESD rating test.
    Type: Grant
    Filed: November 4, 2016
    Date of Patent: January 9, 2018
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: He Lin, Kun Chen, Chao Wu, Dening Wang, Lily Springer, Andy Strachan, Gang Xue
  • Publication number: 20180006013
    Abstract: A contact array optimization scheme for ESD devices. In one embodiment, contact apertures patterned through a pre-metal dielectric layer over active areas may be selectively modified in size, shape, placement and the like, to increase ESD protection performance, e.g., such as maximizing the transient current density, etc., in a standard ESD rating test.
    Type: Application
    Filed: November 4, 2016
    Publication date: January 4, 2018
    Inventors: He LIN, Kun CHEN, Chao WU, Dening WANG, Lily SPRINGER, Andy STRACHAN, Gang XUE
  • Publication number: 20170345813
    Abstract: A low dynamic resistance, low capacitance diode of a semiconductor device includes a heavily-doped n-type substrate. A lightly-doped n-type layer 1 micron to 5 microns thick is disposed on the n-type substrate. A lightly-doped p-type layer 3 microns to 8 microns thick is disposed on the n-type layer. The low dynamic resistance, low capacitance diode, of the semiconductor device includes a p-type buried layer, with a peak dopant density above 1×1017 cm?3, extending from the p-type layer through the n-type layer to the n-type substrate. The low dynamic resistance, low capacitance diode also includes an n-type region disposed in the p-type layer, extending to a top surface of the p-type layer.
    Type: Application
    Filed: August 17, 2017
    Publication date: November 30, 2017
    Inventors: Andrew D. Strachan, Alexei Sadovnikov, Gang Xue, Dening Wang
  • Patent number: 9773777
    Abstract: A low dynamic resistance, low capacitance diode of a semiconductor device includes a heavily-doped n-type substrate. A lightly-doped n-type layer 1 micron to 5 microns thick is disposed on the n-type substrate. A lightly-doped p-type layer 3 microns to 8 microns thick is disposed on the n-type layer. The low dynamic resistance, low capacitance diode, of the semiconductor device includes a p-type buried layer, with a peak dopant density above 1×1017 cm?3, extending from the p-type layer through the n-type layer to the n-type substrate. The low dynamic resistance, low capacitance diode also includes an n-type region disposed in the p-type layer, extending to a top surface of the p-type layer.
    Type: Grant
    Filed: January 8, 2016
    Date of Patent: September 26, 2017
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Andrew D Strachan, Alexei Sadovnikov, Gang Xue, Dening Wang
  • Publication number: 20170200712
    Abstract: A low dynamic resistance, low capacitance diode of a semiconductor device includes a heavily-doped n-type substrate. A lightly-doped n-type layer 1 micron to 5 microns thick is disposed on the n-type substrate. A lightly-doped p-type layer 3 microns to 8 microns thick is disposed on the n-type layer. The low dynamic resistance, low capacitance diode, of the semiconductor device includes a p-type buried layer, with a peak dopant density above 1×1017 cm?3, extending from the p-type layer through the n-type layer to the n-type substrate. The low dynamic resistance, low capacitance diode also includes an n-type region disposed in the p-type layer, extending to a top surface of the p-type layer.
    Type: Application
    Filed: January 8, 2016
    Publication date: July 13, 2017
    Applicant: Texas Instruments Incorporated
    Inventors: Andrew D. Strachan, Alexei Sadovnikov, Gang Xue, Dening Wang
  • Patent number: 9594885
    Abstract: In various embodiments, methods and systems for license-messaging using cloud public-messaging infrastructures are provided. A cloud public-messaging infrastructure supports license message communication between applications. The cloud public-messaging infrastructure may implement license-messaging that circumvents network control units that control communication to the network components. A license-messaging channel is initialized with an on-premise relay service using the cloud public-messaging infrastructure. A cloud-based relay service listens for a license request from the cloud-based application. The license request is pushed using the cloud public-messaging infrastructure such that the license request is pulled through the license-messaging channel via the on-premise relay service to the on-premise license server.
    Type: Grant
    Filed: March 6, 2014
    Date of Patent: March 14, 2017
    Assignee: Microsoft Technology Licensing, LLC
    Inventors: Xiang Ao, Mingqiang Xu, Qiufang Shi, Gang Xue
  • Publication number: 20150254439
    Abstract: In various embodiments, methods and systems for license-messaging using cloud public-messaging infrastructures are provided. A cloud public-messaging infrastructure supports license message communication between applications. The cloud public-messaging infrastructure may implement license-messaging that circumvents network control units that control communication to the network components. A license-messaging channel is initialized with an on-premise relay service using the cloud public-messaging infrastructure. A cloud-based relay service listens for a license request from the cloud-based application. The license request is pushed using the cloud public-messaging infrastructure such that the license request is pulled through the license-messaging channel via the on-premise relay service to the on-premise license server.
    Type: Application
    Filed: March 6, 2014
    Publication date: September 10, 2015
    Applicant: MICROSOFT CORPORATION
    Inventors: XIANG AO, MINGQIANG XU, QIUFANG SHI, GANG XUE
  • Patent number: 9128780
    Abstract: The present invention extends to methods, systems, and computer program products for validating license servers in virtualized environments. Embodiments of the invention leverage a set of features acquired or built in cloud computing environments to facilitate a software based solution providing uniqueness and immutability of a license server hosted in the cloud. Avoiding features of the underlying hardware systems results a much more flexible and reliable platform for hosting license servers. Features of a cloud storage service can be used to create a unique ID for a license server. Security and reliability of license servers hosted in a pubic cloud environment is also improved.
    Type: Grant
    Filed: February 22, 2012
    Date of Patent: September 8, 2015
    Assignee: Microsoft Technology Licensing, LLC
    Inventors: Gang Xue, Qiufang Shi
  • Patent number: 8987092
    Abstract: Methods for fabricating a FIN structure with a semicircular top surface and rounded top surface corners and edges are disclosed. As a part of a disclosed method, a FIN structure is formed in a semiconductor substrate. The FIN structure includes a top surface having corners and edges. The FIN structure is annealed where the annealing causes the top surface to have a semicircular shape and the top surface corners and edges to be rounded.
    Type: Grant
    Filed: April 28, 2008
    Date of Patent: March 24, 2015
    Assignee: Spansion LLC
    Inventors: Inkuk Kang, Gang Xue, Shenqing Fang, Rinji Sugino, Yi Ma
  • Patent number: 8947546
    Abstract: An apparatus, and an associated method, for facilitating stabilization of a recorded video sequence, formed of captured image frames. Captured image frames are cropped by a frame cropper. Cropping of an image is dependent upon lighting conditions. Upon the occurrence of a low-light, lighting condition, the amount of cropping is altered. And, when acceptable lighting conditions return, the amount of cropping is again altered, all in a manner to facilitate video stabilization.
    Type: Grant
    Filed: March 5, 2012
    Date of Patent: February 3, 2015
    Assignee: BlackBerry Limited
    Inventors: Brett Stuart Foster, Bryan Andrew Krawetz, Mark David Rushby, Gael Jaffrain, Sung Ho Hong, Joshua Lucien Daigle, Gang Xue
  • Patent number: 8790530
    Abstract: A method and manufacture for charge storage layer separation is provided. A layer, such as a polymer layer, is deposited on top of an ONO layer so that the polymer layer is planarized, or approximately planarized. The ONO includes at least a first region and a second region, where the first region is higher than the second region. For example, the first region may be the portion of the ONO that is over the source/drain region, and the second region may be the portion of the ONO that is over the shallow trench. Etching is performed on the polymer layer to expose the first region of the ONO layer, leaving the second region of the ONO unexposed. The etching continues to occur to etch the exposed ONO at the first region so that the ONO layer is etched away in the first region and the second region remains unexposed.
    Type: Grant
    Filed: February 10, 2010
    Date of Patent: July 29, 2014
    Assignee: Spansion LLC
    Inventors: Angela T. Hui, Gang Xue
  • Patent number: 8742496
    Abstract: Methods for forming a memory cell are disclosed. A method includes forming a source-drain structure in a semiconductor substrate where the source-drain structure includes a rounded top surface and sidewall surfaces. An oxide layer is formed on the top and sidewall surfaces of the source-drain structure. The thickness of the portion of the oxide layer that is formed on the top surface of the source-drain structure is greater than the thickness of the portion of the oxide layer that is formed on the sidewall surfaces of the source-drain structure.
    Type: Grant
    Filed: June 17, 2013
    Date of Patent: June 3, 2014
    Assignee: Spansion LLC
    Inventors: Shenqing Fang, Gang Xue, Wenmei Li, Inkuk Kang
  • Patent number: 8692900
    Abstract: An apparatus, and an associated method, facilitates capturing an image in an electronic camera without having to wait for an image to settle or the camera to stabilize. Image frames are captured continuously. Data representing captured images is compressed. The compressed files are stored continuously, such that even before a shutter button is actuated, one or compressed image frames have already been recorded. When the shutter button is actuated, the largest of the compressed data files is selected for use, such as display, printing or transmission. Selection is made based on the size of the compressed image file.
    Type: Grant
    Filed: April 22, 2011
    Date of Patent: April 8, 2014
    Assignee: BlackBerry Limited
    Inventors: Dmitry Denisenkov, Gang Xue, Sung Ho Hong, Qian Wang
  • Publication number: 20140060750
    Abstract: A peeling apparatus for peeling labels in rows from a tape-shaped release paper comprises a main body, a peeling mechanism, a driving mechanism and a sensing mechanism. The peeling mechanism locates the release paper and peels the labels in a row from the release paper when being rotating. The sensing mechanism located upon the peeling mechanism and parallel with the peeling mechanism. The labels in a row are orderly arranged from a first position to a second position on the release paper. The sensing mechanism comprises at least two detectors which are perpendicular to the peeling mechanism. When the peeled labels facing the sensing mechanism, either of the at least two detectors detects the peeled labels at the first position or the second position to generate a pause signal. The driving mechanism stops driving the peeling mechanism rotating in response to the pause signal.
    Type: Application
    Filed: April 16, 2013
    Publication date: March 6, 2014
    Applicants: HON HAI PRECISION INDUSTRY CO., LTD., HONG FU JIN PRECISION INDUSTRY (ShenZhen) CO., LTD
    Inventors: ZHAO-YONG LI, LIAN-GANG XUE
  • Publication number: 20140060752
    Abstract: A peeling apparatus for peeling labels from a tape-shaped release paper comprises a main body, a peeling mechanism and a driving mechanism. The release paper comprises a free end without labels. The label comprises an information surface and an adhesive surface opposite to the information surface. The peeling mechanism comprises a first roller, a second roller above the first roller, and a peeling member. The main body comprises a first cantilever. The first roller sleeved on the first cantilever fixes the release paper. The second roller fixes the free end. When being rotating by the driving mechanism, the release paper moves along a first direction and turns to move along a second direction after passing the peeling mechanism. The first direction forms an angle with the second direction. Each of the labels is partly peeled from the release paper by the peeling member and the adhesive surface is upward.
    Type: Application
    Filed: April 16, 2013
    Publication date: March 6, 2014
    Applicants: HON HAI PRECISION INDUSTRY CO., LTD., HONG FU JIN PRECISION INDUSTRY (ShenZhen) CO., LTD
    Inventors: ZHAO-YONG LI, LIAN-GANG XUE
  • Patent number: 8660594
    Abstract: The disclosure discloses a method for shielding a short message receiving function. The method includes the following steps of: storing parameters related to short-message-receiving-function-shielding in an Element File (EF) in a Subscriber Identity Model (SIM) card; performing inter-verification by utilizing the EF in the SIM-card and a Non Volatile (NV) random access memory in a data card to determine whether the SIM-card is applied to the data card; and when the SIM-card is determined to be applied to the data card, reporting the parameters related to short-message-receiving-function-shielding to a network during the process of attaching mobile terminal to the network. Compared with the conventional art, the technical solution of the disclosure can shield the short message receiving function without generating short message fee, so as to enhance the stability of the data service to a large extent and increase the flexibility for a subscriber in selecting the service type at the terminal.
    Type: Grant
    Filed: September 25, 2010
    Date of Patent: February 25, 2014
    Assignee: ZTE Corporation
    Inventors: Yi Zhang, Gang Xue
  • Patent number: 8637918
    Abstract: A memory and method of manufacture employing word line scaling. A layered stack, including a charge trapping component and a core polysilicon layer, is formed on a core section and a peripheral section of a substrate. A portion of the layered stack, including the core polysilicon layer is then removed from the peripheral section. A peripheral polysilicon layer, which is thicker than the core polysilicon layer of the layered stack, is next formed on the layered stack and the peripheral section. The layered stack is then isolated from the peripheral polysilicon layer by removing a portion of the peripheral polysilicon layer from the core section, and polysilicon lines are patterned in the isolated layered stack.
    Type: Grant
    Filed: November 10, 2011
    Date of Patent: January 28, 2014
    Assignee: Spansion LLC
    Inventors: Shenqing Fang, Chun Chen, Wenmei Li, Inkuk Kang, Gang Xue, Hyesook Hong