Abstract: A magnetic microstructure comprising (i) a magnetic storage layer having a magnetic easy axis perpendicular to a film plane of the storage magnetic layer; (ii) a magnetic assist layer having a magnetic easy axis in the film plane; and (iii) a phase transition interlayer between the magnetic storage layer and the magnetic assist layer. The phase transition layer comprises a material, such as FeRh, that switches from antiferromagnetic at ambient to ferromagnetic at a transition temperature that is greater than ambient, but below the Curie temperature. When the phase transition interlayer is in antiferromagnetic phase, there exists little magnetic coupling between the storage and assist layers. When the interlayer changes to ferromagnetic phase, the interlayer couples the magnetic moments of the storage and assist layer ferromagnetically.

Abstract: Housing of electronic device includes a metal base, a ceramic layer forming on the metal base, and at least one pattern formed on the surface of the ceramic layer. The disclosure also described a method to make the housing.

Abstract: A Schottky diode includes a first nitride-based semiconductor layer disposed atop a substrate. A second nitride-based semiconductor layer is disposed atop a portion of the first nitride-based semiconductor layer. The second layer has a doping concentration lower than that of the first layer. A first Schottky contact metal layer having a first metal work function is disposed on a top planar surface of the second layer, forming a first Schottky junction. A second Schottky contact metal layer having a second metal work function is disposed atop of and laterally surrounding the first Schottky contact metal layer, the metal work function of the second metal layer is higher than that of the first metal layer. A metal layer disposed on first and second planar surfaces forms an ohmic contact with the first nitride-based semiconductor layer.

Abstract: A mold, comprising: a substrate, the substrate having an inside surface and an outside surface; and a ceramic coating formed on at least substantially the entire inside surface, the ceramic coating comprising chromic oxide, silicon dioxide, and alumina. A method for making the present mold is provided.

Abstract: A Schottky contact is disposed atop a surface of a semiconductor. A first Schottky contact metal layer is disposed atop a first portion of the semiconductor surface. A second Schottky contact metal is disposed atop a second portion of the surface layer and adjoins the first Schottky contact metal layer. The first Schottky contact metal layer has a lower work function than the second Schottky contact metal layer.

Abstract: A power amplifying device with linear corrector utilizing the polynomial format to realize pre-distortion is disclosed. Its effective order estimation technique for polynomial based pre-distorter includes the following steps. Firstly, it receives the polynomial of the described pre-distorter and then, the polynomial is transformed into the matrix expression, obtaining the pre-distorter consisted of K pre-distortion functions, where K denotes the maximum order of the described polynomials. Secondly, singular value decomposition is performed for the pre-distortion matrix, obtaining singular value matrix. Thirdly, on the basis of the singular value matrix, effective rank of the pre-distortion matrix is obtained. Such effective rank of the pre-distortion matrix is determined as the effective order of the polynomial.

Abstract: A housing for an electronic device includes a metal substrate and a ceramic coating directly formed on at least portions of the substrate, the coated portions of the substrate having a rough surface. A method for fabricating the housing comprises roughening predetermined portions of the substrate; thermally spraying a ceramic coating on the roughened portions of the substrate, fixing the substrate on a tool having cold water circularly running there within during the thermal spraying; and grinding and polishing the ceramic coating.

Abstract: The invention provides the use of immune regulatory oligonucleotides (IRO) as antagonist of TLRs and potentiators of anti-inflammatory agents that inhibit TNF for the prevention and treatment of inflammatory and autoimmune diseases.

Abstract: The invention relates to the therapeutic use of immunostimulatory oligonucleotides and/or immunomers on mucosal innate immunity as well as adjuvant activity using ovalbumin (OVA) as an antigen through administration to the mucosal lining.

Abstract: A method for making a device housing comprises: providing a metal substrate; etching grooves on a portion of the surface of the metal substrate; forming a metallic coating on the surface of the metal substrate and in the grooves; and removing the metallic coating formed on the surface of the metal substrate not comprising the grooves. A device housing made by the method is also described there.

Abstract: A mold, comprising: a substrate, the substrate having an inside surface and an outside surface; and a ceramic coating formed on at least substantially the entire inside surface, the ceramic coating comprising chromic oxide, silicon dioxide, and alumina. A method for making the present mold is provided.

Abstract: A process of fabricating a perpendicular magnetic recording medium. In one embodiment, the process may comprise forming a metallic buffer layer with a (002) texture on an underlayer using a deposition process performed at a temperature below 30° C. The underlayer may have a crystalline (001) texture. The process may further comprise forming a perpendicular magnetic recording layer on top of the metallic buffer layer using a deposition process performed at a temperature above 350° C. The magnetic recording layer may comprise a magnetic material with a L10 crystalline structure and with a c-axis perpendicular to a plane of the perpendicular magnetic recording layer. The process may further comprise removing metal of the metallic buffer layer from a top surface of the perpendicular magnetic recording layer that moved to the top surface of the perpendicular magnetic recording layer during the forming of the perpendicular magnetic recording layer.

Abstract: A magnetic memory or MRAM memory system comprising an M×N crossbar array of MRAM cells. Each memory cell stores binary data bits with switchable magnetoresistive tunnel junctions (MJT) where the electrical conductance changes as the magnetic moment of one electrode (the storage layer) in the MJT switches direction. The switching of the magnetic moment is assisted by a phase transition interlayer that transitions from antiferromagnetic to ferromagnetic at a well defined, above ambient temperature.

Abstract: A rack apparatus (100) includes a frame (10), a plurality of supporting members (106), and a plurality of retaining members (12). The supporting members are arranged/mounted on/to the frame. The retaining members are mounted on the supporting members. Each retaining member includes a fixing piece (120) and two supporting pieces (122, 124). The fixing piece has a notched mounting portion. The two supporting pieces are respectively positioned at an opposite side of the fixing piece. Each supporting piece forms a retaining portion (i.e., a through hole therein). The notched mounting portion and the retaining portions together help retain a workpiece within a given retaining member.

Abstract: The invention relates to the therapeutic use of oligonucleotides as immunostimulatory agents in immunotherapy applications. More particularly, the invention provides immunomers for use in methods for generating an immune response or for treating a patient in need of immunostimulation. The immunomers of the invention comprise at least two oligonucleotides linked at their 3? ends, internucleoside linkages or functionalized nucleobase or sugar to a non-nucleotidic linker, at least one of the oligonucleotides being an immunostimulatory oligonucleotide and having an accessible 5? end.

Abstract: The invention relates to the therapeutic use of oligonucleotides as immunostimulatory agents in immunotherapy applications. More particularly, the invention provides immunomers for use in methods for generating an immune response or for treating a patient in need of immunostimulation. The immunomers of the invention comprise at least two oligonucleotides linked at their 3? ends, internucleoside linkages or functionalized nucleobase or sugar to a non-nucleotidic linker, at least one of the oligonucleotides being an immunostimulatory oligonucleotide and having an accessible 5? end.

Abstract: The invention provides the use of TLR inhibitors or a pharmaceutically acceptable derivative thereof, optionally in combination with one or more lipid lowering composition, cholesterol lowering composition, diuretics, non-steroidal anti-inflammatory compounds (NSAIDs), antibodies, antisense oligonucleotides, TLR agonists, TLR antagonists, peptides, proteins or gene therapy vectors or combinations thereof for the prevention or treatment of hypercholesterolemia and/or hyperlipidemia and/or diseases associated therewith.

Abstract: A perpendicular spin-torque-driven magnetic oscillator is disclosed. According to various embodiments, the magnetic oscillator comprises a magnetic reference stack, a magnetic oscillating stack, and an interlayer between the reference stack and the oscillating stack such that the reference stack and the oscillating stack are exchange coupled. The reference stack may have sufficient perpendicular anisotropy such that it causes, via the spin momentum transfer effect, the spin polarization of the conducting electrons in the oscillating stack to produce a spin torque on the local magnetization of the oscillating layer. As such, the oscillating stack may produce a sustained gyromagnetic oscillation around the perpendicular axis of the oscillating stack when (i) the oscillating stack and the reference stack have opposite magnetizations and (ii) there is a direct current flowing in the magnetic oscillator from the oscillating stack to the reference stack.

Abstract: A magnetic memory or MRAM memory system comprising an M×N crossbar array of MRAM cells. Each memory cell stores binary data bits with switchable magnetoresistive tunnel junctions (MJT) where the electrical conductance changes as the magnetic moment of one electrode (the storage layer) in the MJT switches direction. The switching of the magnetic moment is assisted by a phase transition interlayer that transitions from antiferromagnetic to ferromagnetic at a well defined, above ambient temperature.

Abstract: A method of obtaining a disparity vector and its encoding/decoding in the multi-view coding process is disclosed. The present invention includes essentially: determining a disparity vector between two views during the multi-view image coding, and computing a disparity vector between the other two views according to the disparity vector between the two views and the known relative location information between each of the views. Thereafter, the disparity vector is used for multi-view encoding/decoding. The present invention further makes use of the correlation between the disparity vector and depth information of the spatial vector on one hand, and on the other hand makes use of the direct relationship between the disparity vector and the location of each of the cameras. It is experimentally proved that the disparity vector between several views can be accurately computed during the multi-view coding, thereby improving the performance of multi-view coding.