Abstract: A surface treatment process for a metal article includes the following steps. Firstly, a metal article is provided. Secondly, the metal article is anodized to form an anodic oxide layer on a surface thereof. Thirdly, the surface of the metal article is rinsed. Fourthly, the surface of the metal article is dyed. Fifthly, the now-dyed anodic oxide layer of the metal article is sealed. Finally, the metal article is rinsed using an acetic acid solution.

Abstract: A surface treatment process for a welded metal article includes following steps. Firstly, a metal article with a weld joint region is provided. Secondly, the metal article is anodized to form an anodic oxide layer on a surface thereof. Thirdly, the surface of the anodized metal article is rinsed. Fourthly, at least the anodized surface of the metal article in the region of the weld joint region is activated in a nitric acid solution. Fifthly, the anodized surface (i.e., the anodic oxide layer) of the metal article is dyed. Sixthly, the anodic oxide layer of the metal article is sealed. Finally, the metal article is rinsed.

Abstract: A rack apparatus (100) includes a frame (10), a plurality of supporting members (106), and a plurality of retaining members (12). The supporting members are arranged/mounted on/to the frame. The retaining members are mounted on the supporting members. Each retaining member includes a fixing piece (120) and two supporting pieces (122, 124). The fixing piece has a notched mounting portion. The two supporting pieces are respectively positioned at an opposite side of the fixing piece. Each supporting piece forms a retaining portion (i.e., a through hole therein). The notched mounting portion and the retaining portions together help retain a workpiece within a given retaining member.

Abstract: A perpendicular spin-torque-driven magnetic oscillator is disclosed. According to various embodiments, the magnetic oscillator comprises a magnetic reference stack, a magnetic oscillating stack, and an interlayer between the reference stack and the oscillating stack such that the reference stack and the oscillating stack are exchange coupled. The reference stack may have sufficient perpendicular anisotropy such that it causes, via the spin momentum transfer effect, the spin polarization of the conducting electrons in the oscillating stack to produce a spin torque on the local magnetization of the oscillating layer. As such, the oscillating stack may produce a sustained gyromagnetic oscillation around the perpendicular axis of the oscillating stack when (i) the oscillating stack and the reference stack have opposite magnetizations and (ii) there is a direct current flowing in the magnetic oscillator from the oscillating stack to the reference stack.

Abstract: A magnetic memory cell and a manufacturing method for the magnetic memory cell are provided. In the magnetic memory cell, a pinned layer of a magnetic bottom electrode can be formed with sizes different from the free layer. The wider magnetic bottom electrode produces a preferable uniform bias field that will create a normal magnetization vector distribution in the end domain of the free layer, and thus achieving a preferred switching property. The above process can also be achieved through self-alignment. In addition, by adjusting the bias field of the bottom electrode, uniform field distribution over entire free layer can be significantly improved, and thus the magnetic memory cell will have a very low writing toggle current.

Abstract: A guard ring is formed in a semiconductor region that is part of a Schottky junction or Schottky diode. The guard ring is formed by ion implantation into the semiconductor contact layer without completely annealing the semiconductor contact layer to form a high resistance region. The guard ring may be located at the edge of the layer or, alternatively, at a distance away from the edge of the layer. A Schottky metal contact is formed atop the layer, and the edges of the Schottky contact are disposed atop the guard ring.

Abstract: A ferromagnetic thin-film based array of directed magnetic field generating structures having a plurality of toroidally shaped layer stacks each with a pair of ferromagnetic material layers separated by an intermediate layer of nonmagnetic material. Electrical connections are made to opposite sides thereof. A serpentine first side electrical conductor is folded back so as to have parallel branches and together zigzag to cross over each stack on one side thereof. A serpentine second side electrical conductor, also folded back so as to have parallel branches, can be further provided with these branches together zigzagging to cross each stack on an opposite side thereof. These first and second side electrical conductors can be electrically joined to form an array electrical conductor.

Abstract: A ferromagnetic thin-film based array of directed magnetic field generating structures having a plurality of toroidally shaped layer stacks each with a pair of ferromagnetic material layers separated by an intermediate layer of nonmagnetic material. Electrical connections are made to opposite sides thereof. A serpentine first side electrical conductor is folded back so as to have parallel branches and together zigzag to cross over each stack on one side thereof. A serpentine second side electrical conductor, also folded back so as to have parallel branches, can be further provided with these branches together zigzagging to cross each stack on an opposite side thereof. These first and second side electrical conductors can be electrically joined to form an array electrical conductor.

Abstract: Various embodiments of a magnetic memory element, including a storage layer and a reference layer, are disclosed. The storage layer includes two conjugate magnetic domain segments having opposing helicities. The reference layer is permanently magnetized. A non-magnetic layer is interposed between the two magnetic layers. The boundaries of the two conjugate magnetic domain segments of the storage layer define domain walls along the radial direction thereof. The magnetic moment direction of one domain wall points inward and the magnetic moment direction of the other domain wall points outward. The two domain walls always attract each other, leaving one segment significantly larger than the other. These two different conditions (each longer the other) define two binary data states. By sending a vertical current through the magnetic memory element, transitions between the memory states can be achieved. Also disclosed are a memory cell, a memory device, and a computing device.

Abstract: The invention relates to the therapeutic use of immunostimulatory oligonucleotides and/or immunomers on mucosal innate immunity as well as adjuvant activity using ovalbumin (OVA) as an antigen through administration to the mucosal lining.

Abstract: The invention relates to the therapeutic use of oligonucleotides as immunostimulatory agents in immunotherapy applications. More particularly, the invention provides immunomers for use in methods for generating an immune response or for treating a patient in need of immunostimulation. The immunomers of the invention comprise at least two oligonucleotides linked at their 3? ends, internucleoside linkages or functionalized nucleobase or sugar to a non-nucleotidic linker, at least one of the oligonucleotides being an immunostimulatory oligonucleotide and having an accessible 5? end.

Abstract: A system determines bit error rate in a sampled data system having a disc formed of a magnetic medium and a data head for writing data on the disc and retrieving data from the disc. A pattern is written on the disc, which includes isolated instances associated with a predetermined event. The pattern is retrieved from the disc and the isolated instances are combined to obtain a representative instance having a reduced media noise component. The representative instance is combined with each, of the isolated instances to obtain noise sequences. An autocorrelation component is obtained based on the instances read from the disc and the noise sequences. A channel filter is developed having an impulse response based on the representative instance and based on the channel requirements for a predetermined channel model.

Abstract: A magnetic sensor. According to one embodiment, the sensor comprises a synthetic antiferromagnetic (SAF) layer having first and second wing regions and an active region therebetween. The SAF layer includes a non-magnetic metal layer having first and second wing region portions and an active region portion therebetween, the non-magnetic metal layer including first and second opposing surfaces. The SAF layer also includes a first ferromagnetic layer adjacent a first surface of the non-magnetic metal layer and having first and second wing region portions and an active region portion therebetween. The SAF layer further includes a second ferromagnetic layer adjacent the second surface of the non-magnetic metal layer and including a first wing region portion adjacent the first wing region portion of the non-magnetic metal layer and a second wing region portion adjacent the second wing region portion of the non-magnetic metal layer.

Abstract: The invention relates to control systems for data storage media. More particularly, the invention relates to a system, method and apparatus for forming various frequency modulation patterns on storage media for providing position error signals. The invention also relates to forming various frequency modulation patterns on storage media for providing position error signals having a continuously varying frequency that is proportional to the position of a read/write transducer head within a track defined on a storage medium. The invention also relates to providing a demodulated signal that is proportional to a continuously varying position error signal frequency and thus to the position of the read/write head within a track defined on a storage medium.

Abstract: Various embodiments of a magnetic memory element, including a storage layer and a reference layer, are disclosed. The storage layer includes two conjugate magnetic domain segments having opposing helicities. The reference layer is permanently magnetized. A nonmagnetic layer is interposed between the two magnetic layers. The boundaries of the two conjugate magnetic domain segments of the storage layer define domain walls along the radial direction thereof. The magnetic moment direction of one domain wall points inward and the magnetic moment direction of the other domain wall points outward. The two domain walls always attract each other, leaving one segment significantly larger than the other. These two different conditions (each longer the other) define two binary data states. By sending a vertical current through the magnetic memory element, transitions between the memory states can be achieved. Also disclosed are a memory cell, a memory device, and a computing device.

Abstract: A magnetoresistive read head. The magnetoresistive read head includes a magnetoresistive element including a lower surface and an upper surface, wherein an electrical resistance of the magnetoresistive element varies in response to varying magnetic fields adjacent to the lower surface of the magnetoresistive element, and a magnetic element adjacent to the upper surface of the magnetoresistive element.

Abstract: The invention relates to control systems for data storage media. More particularly, the invention relates to a system, method and apparatus for forming various frequency modulation patterns on storage media for providing position error signals. The invention also relates to forming various frequency modulation patterns on storage media for providing position error signals having a continuously varying frequency that is proportional to the position of a read/write transducer head within a track defined on a storage medium. The invention also relates to providing a demodulated signal that is proportional to a continuously varying position error signal frequency and thus to the position of the read/write head within a track defined on a storage medium.

Abstract: A magnetoresistive read head. The magnetoresistive read head includes a magnetoresistive element including a lower surface and an upper surface, wherein an electrical resistance of the magnetoresistive element varies in response to varying magnetic fields adjacent to the lower surface of the magnetoresistive element, and a magnetic element adjacent to the upper surface of the magnetoresistive element.

Abstract: A magnetic sensor. According to one embodiment, the sensor comprises a synthetic antiferromagnetic (SAF) layer having first and second wing regions and an active region therebetween. The SAF layer includes a non-magnetic metal layer having first and second wing region portions and an active region portion therebetween, the non-magnetic metal layer including first and second opposing surfaces. The SAF layer also includes a first ferromagnetic layer adjacent a first surface of the non-magnetic metal layer and having first and second wing region portions and an active region portion therebetween. The SAF layer further includes a second ferromagnetic layer adjacent the second surface of the non-magnetic metal layer and including a first wing region portion adjacent the first wing region portion of the non-magnetic metal layer and a second wing region portion adjacent the second wing region portion of the non-magnetic metal layer.

Abstract: A magnetic head has an exchange isolated poletip located between a shield of an MR sensor and a write pole of an inductive sensor. The poletip is preferably made of high Bs material, allowing the flux that travels through the much larger pole layer to funnel through the poletip without saturation. The poletip is isolated from the shield layer in order to decouple the shield layer from unfavorable domain patterns that may occur in the poletip, which in turn reduces noise in the sensor, while the shield layer serves to complete the inductive circuit. Despite having a poletip isolated by nonmagnetic material, heads built according to this invention have demonstrated high overwrite as well as remarkably low noise.