Patents by Inventor Garam Park
Garam Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240140545Abstract: The present invention relates to a robot. A robot according to one embodiment of the present invention comprises: a body having a set volume: and a driving module provided in the left region and the right region of the body, respectively, and rotatably connected to the body by a rotation shaft, wherein the driving module comprises: a rotating member connected to the rotating shaft; a first driving part extending from one side of the rotating member slantwise by a first inclination angle with respect to the rotating shaft in a direction away from the rotating shaft; and a second driving part extending from the one side of the rotating member slantwise by a second inclination angle with respect to the rotating shaft in the direction away from the rotating shaft.Type: ApplicationFiled: April 23, 2021Publication date: May 2, 2024Applicant: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)Inventors: Taewon SEO, Youngjoo LEE, Garam PARK, Jiseok LEE, Joohyun OH, Doopyo YOON, Hobyeong CHAE, Myoungjae SEO
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Patent number: 11959003Abstract: A quantum dot including a core including a semiconductor nanocrystal including a Group III-V compound; and a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc, selenium, and optionally sulfur, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc, sulfur, and optionally selenium, wherein the quantum dot does not include cadmium, an emission peak wavelength of the quantum dot is in a range of about 500 nanometers (nm) to about 550 nm, and an ultraviolet-visible absorption spectrum of the quantum dot includes a first exciton absorption peak and a second exciton absorption peak, a composition including the same, a composite, and an electronic device.Type: GrantFiled: February 13, 2023Date of Patent: April 16, 2024Assignee: SAMSUNG DISPLAY CO., LTDInventors: Nayoun Won, Garam Park, Shin Ae Jun, Tae Gon Kim, Taekhoon Kim, Shang Hyeun Park, Mi Hye Lim
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Publication number: 20240089357Abstract: An electronic device may include a first housing, a second housing slidably coupled to the first housing along a first direction, and a flexible display disposed to be supported by the first housing and the second housing. The electronic device may include a support member disposed under the flexible display to support at least a portion of the flexible display. The support member may include an elastic body including a first surface facing the flexible display and a second surface facing the opposite direction to the first surface, and a plurality of shafts at least partially embedded in the elastic body and spaced apart from each other at predetermined intervals, and each of the plurality of shafts may be disposed to have a length in a second direction perpendicular to the first direction.Type: ApplicationFiled: October 13, 2023Publication date: March 14, 2024Inventors: Byounggyu PARK, Taejeong KIM, Kidoc SON, Kyunghwan SONG, Garam LEE, Hyunsuk CHOI
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Patent number: 11927838Abstract: A quantum dot including a core and a shell disposed on the core wherein one of the core and the shell includes a first semiconductor nanocrystal including zinc and sulfur and the other of the core and the shell includes a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, the first semiconductor nanocrystal further includes a metal and a halogen configured to act as a Lewis acid in a halide form, an amount of the metal is greater than or equal to about 10 mole percent (mol %) based on a total number of moles of sulfur, and an amount of the halogen is greater than or equal to about 10 mol % based on a total number of moles of sulfur, a method of producing the same, and a composite and an electronic device including the same.Type: GrantFiled: July 11, 2023Date of Patent: March 12, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Tae Gon Kim, Garam Park, Jooyeon Ahn, Shang Hyeun Park, Shin Ae Jun
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Publication number: 20240065000Abstract: Provided are a nonvolatile memory device and an operating method thereof. The nonvolatile memory device may include a conductive pillar, a resistance change layer surrounding a side surface of the conductive pillar, a semiconductor layer surrounding a side surface of the resistance change layer, a gate insulating layer surrounding a side surface of the semiconductor layer, and a plurality of insulating patterns and a plurality of gate electrodes alternately arranged along a surface of the gate insulating layer. The plurality of insulating patterns and the plurality of gate electrodes may surround a side surface of the gate insulating layer.Type: ApplicationFiled: February 15, 2023Publication date: February 22, 2024Applicant: Samsung Electronics Co., Ltd.Inventors: Yumin Kim, Jooheon Kang, Sunho Kim, Seyun Kim, Garam Park, Hyunjae Song, Dongho Ahn, Seungyeul Yang, Myunghun Woo, Jinwoo Lee
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Publication number: 20240065001Abstract: Provided area a variable resistance memory device and/or an electronic device including the same. The variable resistance memory device includes: a resistance change layer including a metal oxide having an oxygen deficient ratio greater than or equal to about 9%; a semiconductor layer on the resistance change layer; a gate insulating layer on the semiconductor layer; and a plurality of electrodes on the gate insulating layer to be apart from each other.Type: ApplicationFiled: April 12, 2023Publication date: February 22, 2024Applicant: SAMSUNG ELECTRONICS CO,LTD.Inventors: Seyun KIM, Jooheon KANG, Sunho KIM, Yumin KIM, Garam PARK, Hyunjae SONG, Dongho AHN, Seungyeul YANG, Myunghun WOO, Jinwoo LEE
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Patent number: 11866630Abstract: A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, tellurium, and selenium, wherein the quantum dot does not include cadmium, and the semiconductor nanocrystal shell has a mole ratio of tellurium to selenium of less than about 0.025:1, a composition including the quantum dot, a quantum dot-polymer composite, a patterned layer including the composite, and an electronic device including the patterned layer.Type: GrantFiled: December 19, 2022Date of Patent: January 9, 2024Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Taekhoon Kim, Shin Ae Jun, Yong Wook Kim, Tae Gon Kim, Garam Park
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Patent number: 11845888Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.Type: GrantFiled: November 17, 2022Date of Patent: December 19, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yuho Won, Nayoun Won, Sungwoo Hwang, Eun Joo Jang, Soo Kyung Kwon, Yong Wook Kim, Jihyun Min, Garam Park, Shang Hyeun Park, Hyo Sook Jang, Shin Ae Jun, Yong Seok Han
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Patent number: 11827828Abstract: A semiconductor nanocrystal particle including: a core including a first semiconductor material; and a shell disposed on the core, wherein the shell includes a second semiconductor material, wherein the shell is free of cadmium, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.Type: GrantFiled: November 28, 2022Date of Patent: November 28, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Garam Park, Eun Joo Jang, Yongwook Kim, Jihyun Min, Hyo Sook Jang, Shin Ae Jun, Taekhoon Kim, Yuho Won
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Publication number: 20230374379Abstract: Disclosed are a quantum dot and a quantum dot-polymer composite and a device including the same, wherein the quantum dot includes a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dot does not include cadmium, wherein in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.5:1.Type: ApplicationFiled: August 3, 2023Publication date: November 23, 2023Inventors: Garam PARK, Tae Gon KIM, Jooyeon AHN, Ji-Yeong KIM, Nayoun WON, Shin Ae JUN
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Publication number: 20230350237Abstract: A quantum dot including a core and a shell disposed on the core wherein one of the core and the shell includes a first semiconductor nanocrystal including zinc and sulfur and the other of the core and the shell includes a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, the first semiconductor nanocrystal further includes a metal and a halogen configured to act as a Lewis acid in a halide form, an amount of the metal is greater than or equal to about 10 mole percent (mol %) based on a total number of moles of sulfur, and an amount of the halogen is greater than or equal to about 10 mol % based on a total number of moles of sulfur, a method of producing the same, and a composite and an electronic device including the same.Type: ApplicationFiled: July 11, 2023Publication date: November 2, 2023Inventors: Tae Gon KIM, Garam PARK, Jooyeon AHN, Shang Hyeun PARK, Shin Ae JUN
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Patent number: 11760930Abstract: Disclosed are a quantum dot and a quantum dot-polymer composite and a device including the same, wherein the quantum dot includes a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dot does not include cadmium, wherein in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.5:1.Type: GrantFiled: January 25, 2022Date of Patent: September 19, 2023Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Garam Park, Tae Gon Kim, Jooyeon Ahn, Ji-Yeong Kim, Nayoun Won, Shin Ae Jun
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Patent number: 11740495Abstract: A quantum dot including a core and a shell disposed on the core wherein one of the core and the shell includes a first semiconductor nanocrystal including zinc and sulfur and the other of the core and the shell includes a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, the first semiconductor nanocrystal further includes a metal and a halogen configured to act as a Lewis acid in a halide form, an amount of the metal is greater than or equal to about 10 mole percent (mol %) based on a total number of moles of sulfur, and an amount of the halogen is greater than or equal to about 10 mol % based on a total number of moles of sulfur, a method of producing the same, and a composite and an electronic device including the same.Type: GrantFiled: November 27, 2019Date of Patent: August 29, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Tae Gon Kim, Garam Park, Jooyeon Ahn, Shang Hyeun Park, Shin Ae Jun
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Publication number: 20230227116Abstract: The present invention relates to a robot. A robot according to one embodiment of the present invention comprises a body having a set volume, and traveling members provided in the left area and right area of the body and rotatably connected to the body through rotating shafts, wherein the rotating shafts are positioned to be vertically inclined at the incline of the rotating shafts so that same gradually face outward from the top to the bottom thereof.Type: ApplicationFiled: May 12, 2021Publication date: July 20, 2023Applicants: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY), KYONGGI UNIVERSITY INDUSTRY & ACADEMIA COOPERATION FOUNDATIONInventors: Taewon SEO, Youngjoo LEE, Hwa Soo KIM, Garam PARK, Jiseok LEE, Joohyun OH, Doopyo YOON, Hobyeong CHAE, Myoungjae SEO
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Publication number: 20230193131Abstract: A quantum dot including a core including a semiconductor nanocrystal including a Group III-V compound; and a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc, selenium, and optionally sulfur, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc, sulfur, and optionally selenium, wherein the quantum dot does not include cadmium, an emission peak wavelength of the quantum dot is in a range of about 500 nanometers (nm) to about 550 nm, and an ultraviolet-visible absorption spectrum of the quantum dot includes a first exciton absorption peak and a second exciton absorption peak, a composition including the same, a composite, and an electronic device.Type: ApplicationFiled: February 13, 2023Publication date: June 22, 2023Inventors: Nayoun WON, Garam PARK, Shin Ae JUN, Tae Gon KIM, Taekhoon KIM, Shang Hyeun PARK, Mi Hye LIM
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Patent number: 11674079Abstract: A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1: ABX3+???Chemical Formula 1 wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BF4, or a combination thereof, and ? is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers.Type: GrantFiled: August 31, 2021Date of Patent: June 13, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jihyun Min, Eun Joo Jang, Yongwook Kim, Garam Park
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Patent number: 11661547Abstract: A quantum dot, including a core including a first semiconductor material that includes indium; and a shell including a second semiconductor material, and disposed on the core, wherein the first semiconductor material and the second semiconductor material are different, wherein the shell has at least two branch portions and a valley portion connecting the at least two branch portions, at least one of the at least two branch portions comprises Zn, Se, and S, and a content of sulfur in the at least one branch portion increases in a direction away from the core.Type: GrantFiled: May 26, 2020Date of Patent: May 30, 2023Assignees: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG SDI CO., LTD., SAMSUNG DISPLAY CO., LTD.Inventors: Shin Ae Jun, Taekhoon Kim, Garam Park, Yong Seok Han, Eun Joo Jang, Hyo Sook Jang, Tae Won Jeong, Shang Hyeun Park
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Publication number: 20230119564Abstract: A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, tellurium, and selenium, wherein the quantum dot does not include cadmium, and the semiconductor nanocrystal shell has a mole ratio of tellurium to selenium of less than about 0.025:1, a composition including the quantum dot, a quantum dot-polymer composite, a patterned layer including the composite, and an electronic device including the patterned layer.Type: ApplicationFiled: December 19, 2022Publication date: April 20, 2023Inventors: Taekhoon KIM, Shin Ae JUN, Yong Wook KIM, Tae Gon KIM, Garam PARK
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Publication number: 20230121293Abstract: A quantum dot including a multi-component core including a first semiconductor nanocrystal including indium (In), zinc (Zn), and phosphorus (P) and a second semiconductor nanocrystal disposed on the first semiconductor nanocrystal, the second semiconductor nanocrystal including gallium (Ga) and phosphorus (P) wherein the quantum dot is cadmium-free and emits green light, a mole ratio (P:In) of phosphorus relative to indium is greater than or equal to about 0.6:1 and less than or equal to about 1.0, and a mole ratio (P:(In+Ga)) of phosphorus relative to indium and gallium is greater than or equal to about 0.5:1 and less than or equal to about 0.8:1, a quantum dot-polymer composite pattern including the same, and a display device.Type: ApplicationFiled: December 5, 2022Publication date: April 20, 2023Inventors: Hyeyeon YANG, Garam PARK, Shin Ae JUN, Tae Gon KIM, Taekhoon KIM
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Publication number: 20230106180Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.Type: ApplicationFiled: November 17, 2022Publication date: April 6, 2023Inventors: Yuho WON, Nayoun WON, Sungwoo HWANG, Eun Joo JANG, Soo Kyung KWON, Yong Wook KIM, Jihyun MIN, Garam PARK, Shang Hyeun PARK, Hyo Sook JANG, Shin Ae JUN, Yong Seok HAN