Patents by Inventor Garam Park

Garam Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11613699
    Abstract: A quantum dot including a core including a semiconductor nanocrystal including a Group III-V compound; and a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc, selenium, and optionally sulfur, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc, sulfur, and optionally selenium, wherein the quantum dot does not include cadmium, an emission peak wavelength of the quantum dot is in a range of about 500 nanometers (nm) to about 550 nm, and an ultraviolet-visible absorption spectrum of the quantum dot includes a first exciton absorption peak and a second exciton absorption peak, a composition including the same, a composite, and an electronic device.
    Type: Grant
    Filed: July 1, 2020
    Date of Patent: March 28, 2023
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Nayoun Won, Garam Park, Shin Ae Jun, Tae Gon Kim, Taekhoon Kim, Shang Hyeun Park, Mi Hye Lim
  • Publication number: 20230086635
    Abstract: A semiconductor nanocrystal particle including: a core including a first semiconductor material; and a shell disposed on the core, wherein the shell includes a second semiconductor material, wherein the shell is free of cadmium, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.
    Type: Application
    Filed: November 28, 2022
    Publication date: March 23, 2023
    Inventors: Garam PARK, Eun Joo JANG, Yongwook KIM, Jihyun MIN, Hyo Sook JANG, Shin Ae JUN, Taekhoon KIM, Yuho WON
  • Publication number: 20230043195
    Abstract: A quantum dot, a quantum dot composite including the quantum dot, a display panel including the quantum dot composite, and an electronic device including the display panel are provided. The quantum dot includes indium, zinc, phosphorus, and selenium, and does not include cadmium, and has an optical density (OD) per 1 mg for a wavelength of 450 nm of from about 0.2 to about 0.27 and an emission peak of from about 500 nm to about 550 nm, or an optical density per 1 mg for a wavelength of about 450 nm of from about 0.5 to about 0.7 and an emission peak of from about 610 nm to about 660 nm.
    Type: Application
    Filed: July 22, 2022
    Publication date: February 9, 2023
    Inventors: Tae Gon KIM, Shang Hyeun PARK, Taekhoon KIM, Garam PARK, Nayoun WON
  • Patent number: 11530354
    Abstract: A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, tellurium, and selenium, wherein the quantum dot does not include cadmium, and the semiconductor nanocrystal shell has a mole ratio of tellurium to selenium of less than about 0.025:1, a composition including the quantum dot, a quantum dot-polymer composite, a patterned layer including the composite, and an electronic device including the patterned layer.
    Type: Grant
    Filed: November 18, 2020
    Date of Patent: December 20, 2022
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Taekhoon Kim, Shin Ae Jun, Yong Wook Kim, Tae Gon Kim, Garam Park
  • Patent number: 11530353
    Abstract: A quantum dot including a multi-component core including a first semiconductor nanocrystal including indium (In), zinc (Zn), and phosphorus (P) and a second semiconductor nanocrystal disposed on the first semiconductor nanocrystal, the second semiconductor nanocrystal including gallium (Ga) and phosphorus (P) wherein the quantum dot is cadmium-free and emits green light, a mole ratio (P:In) of phosphorus relative to indium is greater than or equal to about 0.6:1 and less than or equal to about 1.0, and a mole ratio (P:(In+Ga)) of phosphorus relative to indium and gallium is greater than or equal to about 0.5:1 and less than or equal to about 0.8:1, a quantum dot-polymer composite pattern including the same, and a display device.
    Type: Grant
    Filed: June 29, 2020
    Date of Patent: December 20, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyeyeon Yang, Garam Park, Shin Ae Jun, Tae Gon Kim, Taekhoon Kim
  • Patent number: 11512252
    Abstract: A semiconductor nanocrystal particle including: a core including a first semiconductor material; and a shell disposed on the core, wherein the shell includes a second semiconductor material, wherein the shell is free of cadmium, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.
    Type: Grant
    Filed: August 30, 2016
    Date of Patent: November 29, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Garam Park, Eun Joo Jang, Yongwook Kim, Jihyun Min, Hyo Sook Jang, Shin Ae Jun, Taekhoon Kim, Yuho Won
  • Patent number: 11505740
    Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.
    Type: Grant
    Filed: September 30, 2021
    Date of Patent: November 22, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yuho Won, Nayoun Won, Sungwoo Hwang, Eun Joo Jang, Soo Kyung Kwon, Yong Wook Kim, Jihyun Min, Garam Park, Shang Hyeun Park, Hyo Sook Jang, Shin Ae Jun, Yong Seok Han
  • Publication number: 20220285445
    Abstract: A display panel may include a light emitting panel, and a color conversion panel. The light emitting panel is configured to emit incident light including a first light and a second light, a luminescent peak wavelength of the first light may be greater than or equal to about 450 nm and less than or equal to about 480 nm and a luminescent peak wavelength of the second light may be greater than or equal to about 500 nm and less than or equal to about 580 nm. The color conversion panel includes a color conversion layer including a conversion region, and optionally, a partition wall defining each region of the color conversion panel. The color conversion region includes a first region corresponding to a red pixel, and the first region include a first composite including a matrix and a plurality of luminescent nanostructures dispersed in the matrix, and in the UV-Vis absorption spectrum, an absorbance ratio at a wavelength of 520 nm with respect to a wavelength of 350 nm may be greater than or equal to about 0.
    Type: Application
    Filed: March 4, 2022
    Publication date: September 8, 2022
    Inventors: Tae Gon KIM, Shin Ae JUN, Deukseok CHUNG, Garam PARK, Sung Hun LEE, Byoung Ki CHOI
  • Publication number: 20220246804
    Abstract: A quantum dot composite includes a matrix and a plurality of quantum dots dispersed in the matrix, and a color conversion panel and a display panel including the same. The plurality of quantum dots include a metal including indium (In) and zinc and a non-metal including phosphorous (P), selenium, and sulfur, wherein the plurality of quantum dots includes a mole ratio of sulfur to indium of greater than or equal to about 3:1 and less than or equal to about 6:1, and a mole ratio of sulfur to selenium of greater than or equal about 0.69:1 and less than or equal to about 0.89, and a mole ratio of zinc to indium of greater than or equal to about 10:1 and less than or equal to about 12.4:1, and wherein the plurality of the quantum dots are configured to emit red light.
    Type: Application
    Filed: January 28, 2022
    Publication date: August 4, 2022
    Inventors: Garam PARK, Shang Hyeun PARK, Min Jong BAE, Mi Hye LIM, Deukseok CHUNG, Shin Ae JUN
  • Patent number: 11332666
    Abstract: A quantum dot including a nanoparticle template including a first semiconductor nanocrystal including a Group II-VI compound, a quantum well including a second semiconductor nanocrystal disposed on the nanoparticle template, the second semiconductor nanocrystal including a Group IIIA metal excluding aluminum and a Group V element; and a shell comprising a third semiconductor nanocrystal disposed on the quantum well, the third semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dot does not include cadmium, a band gap energy of the second semiconductor nanocrystal is less than a band gap energy of the first semiconductor nanocrystal, the band gap energy of the second semiconductor nanocrystal is less than a band gap energy of the third semiconductor nanocrystal, and the quantum dot includes an additional metal including an alkali metal, an alkaline earth metal, aluminum, iron, cobalt, nickel, copper, zinc, or a combination thereof.
    Type: Grant
    Filed: September 29, 2020
    Date of Patent: May 17, 2022
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Jooyeon Ahn, Jongmin Lee, Taekhoon Kim, Shin Ae Jun, Tae Gon Kim, Garam Park
  • Publication number: 20220145178
    Abstract: Disclosed are a quantum dot and a quantum dot-polymer composite and a device including the same, wherein the quantum dot includes a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dot does not include cadmium, wherein in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.5:1.
    Type: Application
    Filed: January 25, 2022
    Publication date: May 12, 2022
    Inventors: Garam PARK, Tae Gon KIM, Jooyeon AHN, Ji-Yeong KIM, Nayoun WON, Shin Ae JUN
  • Publication number: 20220120377
    Abstract: The present disclosure relates to a climbing robot platform. The climbing robot platform is a climbing robot platform of a building facade cleaning robot, and includes a body, a lifting device installed in the body, moving up by winding a rope and moving down by unwinding the rope, and a feeding device installed in the body to feed the rope by adjusting a feed point of the rope.
    Type: Application
    Filed: July 29, 2021
    Publication date: April 21, 2022
    Inventors: Jongwon Kim, Sungkeun Yoo, Jooyoung Hong, Taewon Seo, Hwa Soo Kim, Myoungjae Seo, Joohyun Oh, Jiseok Lee, Garam Park, Youngjoo Lee, Dupyo Yoon, Hobyeong Chae
  • Patent number: 11236270
    Abstract: Disclosed are a quantum dot and a quantum dot-polymer composite and a device including the same, wherein the quantum dot includes a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dot does not include cadmium, wherein in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.5:1.
    Type: Grant
    Filed: July 10, 2019
    Date of Patent: February 1, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Garam Park, Tae Gon Kim, Jooyeon Ahn, Ji-Yeong Kim, Nayoun Won, Shin Ae Jun
  • Publication number: 20220017818
    Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.
    Type: Application
    Filed: September 30, 2021
    Publication date: January 20, 2022
    Inventors: Yuho WON, Nayoun WON, Sungwoo HWANG, Eun Joo JANG, Soo Kyung KWON, Yong Wook KIM, Jihyun MIN, Garam PARK, Shang Hyeun PARK, Hyo Sook JANG, Shin Ae JUN, Yong Seok HAN
  • Publication number: 20210395605
    Abstract: A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1: ABX3+???Chemical Formula 1 wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BF4, or a combination thereof, and ? is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers
    Type: Application
    Filed: August 31, 2021
    Publication date: December 23, 2021
    Inventors: Jihyun MIN, Eun Joo JANG, Yongwook KIM, Garam PARK
  • Patent number: 11193062
    Abstract: Disclosed are a quantum dot population including a plurality of cadmium free quantum dots, a quantum dot polymer composite including the same, and a display device including the same. The plurality of cadmium free quantum dots includes: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, wherein an average particle size of the plurality of cadmium free quantum dots is greater than or equal to about 5.5 nm, a standard deviation of particle sizes of the plurality of cadmium free quantum dots is less than or equal to about 20% of the average particle size, and an average solidity of the plurality of cadmium free quantum dots is greater than or equal to about 0.85.
    Type: Grant
    Filed: March 20, 2020
    Date of Patent: December 7, 2021
    Assignees: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG DISPLAY CO., LTD., SAMSUNG SDI CO.. LTD.
    Inventors: Garam Park, Tae Gon Kim, Nayoun Won, Shin Ae Jun, Soo Kyung Kwon, Seon-Yeong Kim, Shang Hyeun Park, Jooyeon Ahn, Yuho Won, Eun Joo Jang, Hyo Sook Jang
  • Patent number: 11142685
    Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.
    Type: Grant
    Filed: January 11, 2019
    Date of Patent: October 12, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yuho Won, Nayoun Won, Sungwoo Hwang, Eun Joo Jang, Soo Kyung Kwon, Yong Wook Kim, Jihyun Min, Garam Park, Shang Hyeun Park, Hyo Sook Jang, Shin Ae Jun, Yong Seok Han
  • Patent number: 11124702
    Abstract: A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1: ABX3+???Chemical Formula 1 wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BR4, or a combination thereof, and ? is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers.
    Type: Grant
    Filed: February 24, 2020
    Date of Patent: September 21, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jihyun Min, Eun Joo Jang, Yongwook Kim, Garam Park
  • Publication number: 20210284905
    Abstract: A composition including a plurality of quantum dots; a binder polymer; a thiol compound having at least two thiol groups; a polyvalent metal compound; a polymerizable monomer having a carbon-carbon double bond; a photoinitiator; and a solvent.
    Type: Application
    Filed: May 5, 2021
    Publication date: September 16, 2021
    Inventors: Ha Il KWON, Tae Gon KIM, Shang Hyeun PARK, Eun Joo JANG, Shin Ae JUN, Garam PARK
  • Patent number: 11021650
    Abstract: A composition including a plurality of quantum dots; a binder polymer; a thiol compound having at least two thiol groups; a polyvalent metal compound; a polymerizable monomer having a carbon-carbon double bond; a photoinitiator; and a solvent.
    Type: Grant
    Filed: August 9, 2017
    Date of Patent: June 1, 2021
    Assignees: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG DISPLAY CO., LTD., SAMSUNG SDI CO., LTD.
    Inventors: Ha Il Kwon, Tae Gon Kim, Shang Hyeun Park, Eun Joo Jang, Shin Ae Jun, Garam Park