Patents by Inventor Gary Fong

Gary Fong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6833102
    Abstract: According to the present invention, a manifold mounting arrangement is provided wherein a leg manifold is securely mounted midway along its length rather than at its sprue bushing and whereby thermally induced length changes are accommodated outwardly from its centre. Additionally, a first end of the leg manifold is clampingly secured between a sprue housing and a manifold insulator to avoid movement of the first end toward the sprue upon a sprue break portion of the injection moulding cycle.
    Type: Grant
    Filed: December 9, 2002
    Date of Patent: December 21, 2004
    Assignee: StackTeck Systems LTD
    Inventors: Filippo Martino, Vincent Travaglini, Gary Fong, Kyung-Tae Lee
  • Publication number: 20040142064
    Abstract: According to the present invention a coding plate is interspersed between first and second respective inlet and outlet cross over nozzle parts. The cooling plate engages ends of the cross over nozzles during mould filling and provides a melt transfer passage therebetween. Once the mould is filled, the cooling plate acts to dissipate heat from the melt transfer passage thereby promoting solidification of melt therein. Accordingly melt solidification in the sprue is assured with more certainty than prior art designs enabling relatively fax mould cycling with minimal risk of drool.
    Type: Application
    Filed: February 13, 2003
    Publication date: July 22, 2004
    Inventors: Mihai Berceanu, Gary Fong
  • Publication number: 20040068855
    Abstract: According to the present invention, a manifold mounting arrangement is provided wherein a leg manifold is securely mounted midway along its length rather than at its sprue bushing and whereby thermally induced length changes are accommodated outwardly from its centre. Additionally, a first end of the leg manifold is clampingly secured between a sprue housing and a manifold insulator to avoid movement of the first end toward the sprue upon a sprue break portion of the injection moulding cycle.
    Type: Application
    Filed: December 9, 2002
    Publication date: April 15, 2004
    Inventors: Filippo Martino, Vincent Travaglini, Gary Fong, Kyung-Tae Lee
  • Patent number: 6709262
    Abstract: According to the present invention, a nozzle cap is provided which has a housing end that threadedly engages the nozzle housing to secure the nozzle tip to the nozzle housing. The remainder of the cap substantially fills the space between the nozzle tip and the gate insert while maintaining a small clearance between the cap and both the nozzle tip and the gate insert in the region surrounding an outlet end of the nozzle. The clearance prevents direct conductive heat transfer from the outlet end of the nozzle tip to the gate insert yet is sufficiently small enough to substantially eliminate melt to flow past it.
    Type: Grant
    Filed: March 22, 2002
    Date of Patent: March 23, 2004
    Assignee: Stackteck Systems Canada Inc.
    Inventor: Gary Fong
  • Patent number: 6663713
    Abstract: A method and apparatus are disclosed for forming thin polymer layers on semiconductor substrates. In one embodiment, the method and apparatus include the vaporization of stable di-pxylylene, the pyrolytic conversion of such gaseous dimer material into reactive monomers, and the optional blending of the resulting gaseous p-xylylene monomers with one or more polymerizable materials in gaseous form capable of copolymerizing with the p-xylylene monomers to form a low dielectric constant polymerized parylene material. An apparatus is also disclosed which provides for the distribution of the polymerizable gases into the deposition chamber, for cooling the substrate down to a temperature at which the gases will condense to form a polymerized dielectric material, for heating the walls of the deposition chamber to inhibit formation and accumulation of polymerized residues thereon, and for recapturing unreacted monomeric vapors exiting the deposition chamber.
    Type: Grant
    Filed: October 22, 1996
    Date of Patent: December 16, 2003
    Assignee: Applied Materials Inc.
    Inventors: Stuardo A. Robles, Visweswaren Sivaramakrishnan, Bang C. Nguyen, Gayathri Rao, Gary Fong, Vicente Lam, Peter Wai-Man Lee, Mei Chang
  • Publication number: 20030180412
    Abstract: According to the present invention, a nozzle cap is provided which has a housing end that threadedly engages the nozzle housing to secure the nozzle tip to the nozzle housing. The remainder of the cap substantially fills the space between the nozzle tip and the gate insert while maintaining a small clearance between the cap and both the nozzle tip and the gate insert in the region surrounding an outlet end of the nozzle. The clearance prevents direct conductive heat transfer from the outlet end of the nozzle tip to the gate insert yet is sufficiently small enough to substantially eliminate melt to flow past it.
    Type: Application
    Filed: March 22, 2002
    Publication date: September 25, 2003
    Inventor: Gary Fong
  • Patent number: 6347636
    Abstract: The present invention provides systems, methods and apparatus for high temperature (at least about 500-800° C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.
    Type: Grant
    Filed: June 25, 1999
    Date of Patent: February 19, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Li-Qun Xia, Visweswaren Sivaramakrishnan, Srinivas Nemani, Ellie Yieh, Gary Fong
  • Patent number: 6162285
    Abstract: An apparatus for increasing the ozone concentration in the output of an ozone-generating system is disclosed. The invention reduces the concentration of O.sup.+ ions, which would otherwise react with ozone to form diatomic oxygen, by means of an ionic filter. In one embodiment, a gas-permeable electrode within a gas conduit attached to the output of an ozonator is negatively charged to several kilovolts with respect to the distribution line. This electrode attracts the positively charged oxygen ions, removing them before they can react with the ozone. This provides a higher ozone concentration that does not vary as much with distance from the ozone generator.
    Type: Grant
    Filed: May 8, 1997
    Date of Patent: December 19, 2000
    Assignee: Applied Materials, Inc.
    Inventors: Gary Fong, Quoc Truong
  • Patent number: 5939831
    Abstract: The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.
    Type: Grant
    Filed: November 13, 1996
    Date of Patent: August 17, 1999
    Assignee: Applied Materials, Inc.
    Inventors: Gary Fong, Fong Chang, Long Nguyen
  • Patent number: 5935334
    Abstract: The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.
    Type: Grant
    Filed: November 13, 1996
    Date of Patent: August 10, 1999
    Assignee: Applied Materials, Inc.
    Inventors: Gary Fong, Irwin Silvestre
  • Patent number: 5935340
    Abstract: The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.
    Type: Grant
    Filed: November 13, 1996
    Date of Patent: August 10, 1999
    Assignee: Applied Materials, Inc.
    Inventors: Li-Qun Xia, Visweswaren Sivaramakrishnan, Srinivas Nemani, Ellie Yieh, Gary Fong
  • Patent number: 5902404
    Abstract: A remote source of partially ionized plasma gas having ions and excited neutral atom species therein is provided. A chamber having a metallic outer shell and an inner insulative tube, is operated as a microwave resonant cavity, preferably having a diameter of about one quarter of the operating wavelength. A waveguide couples microwave energy from a source to a slot cut into the metallic outer shell of the cavity. Microwave energy passes through the inner energy transparent tube and excites reactant gases supplied from an input tube. Plasma is conducted from the cavity by a plasma output tube coupled into a processing chamber and controlled pressure pumping system.
    Type: Grant
    Filed: March 4, 1997
    Date of Patent: May 11, 1999
    Assignee: Applied Materials, Inc.
    Inventors: Gary Fong, Irwin Silvestre, Quoc Truong
  • Patent number: 5879574
    Abstract: The present invention provides systems, methods and apparatus for high temperature (at least about 500.degree.-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.
    Type: Grant
    Filed: November 13, 1996
    Date of Patent: March 9, 1999
    Assignee: Applied Materials, Inc.
    Inventors: Visweswaren Sivaramakrishnan, Gary Fong
  • Patent number: 5812403
    Abstract: The present invention provides a method for cleaning a processing chamber. According to a specific embodiment, the method includes steps of depositing a dielectric film on a wafer on a ceramic heater in the processing chamber in a first time period, with the ceramic heater heated to a first temperature of at least about 500.degree. C. during the deposition step; and introducing reactive species into the processing chamber from a clean gas that is input to a remote microwave plasma system during a second time period, with the ceramic heater heated to a second temperature of at least about 500.degree. C. during the introducing step. The method also includes cleaning surfaces in the processing chamber, with cleaning performed by the reactive species. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.
    Type: Grant
    Filed: November 13, 1996
    Date of Patent: September 22, 1998
    Assignee: Applied Materials, Inc.
    Inventors: Gary Fong, Li-Qun Xia, Srinivas Nemani, Ellie Yieh