Abstract: A highly miniaturized nanomechanical transistor switch is fabricated using a mechanical cantilever which creates a conductive path between two electrodes in its deflected state. In one embodiment, the cantilever is deflected by an electrostatic attraction arising from a voltage potential between the cantilever and a control electrode. In another embodiment, the cantilever is formed of a material with high magnetic permeability, and is deflected in response to complementary magnetic fields induced in the cantilever and in an adjacent electrode. The nanomechanical switch can be fabricated using well known semiconductor fabrication techniques, although semiconductor materials are not necessary for fabrication. The switch can rely upon physical contact between the cantilever and the adjacent electrode for current flow, or can rely upon sufficient proximity between the cantilever and the adjacent electrode to allow for tunneling current flow.

Abstract: A highly miniaturized nanomechanical transistor switch is fabricated using a mechanical cantilever which creates a conductive path between two electrodes in its deflected state. In one embodiment, the cantilever is deflected by an electrostatic attraction arising from a voltage potential between the cantilever and a control electrode. In another embodiment, the cantilever is formed of a material with high magnetic permeability, and is deflected in response to complementary magnetic fields induced in the cantilever and in an adjacent electrode. The nanomechanical switch can be fabricated using well known semiconductor fabrication techniques, although semiconductor materials are not necessary for fabrication. The switch can rely upon physical contact between the cantilever and the adjacent electrode for current flow, or can rely upon sufficient proximity between the cantilever and the adjacent electrode to allow for tunneling current flow.

Abstract: A highly miniaturized nanomechanical transistor switch is fabricated using a mechanical cantilever which creates a conductive path between two electrodes in its deflected state. In one embodiment, the cantilever is deflected by an electrostatic attraction arising from a voltage potential between the cantilever and a control electrode. In another embodiment, the cantilever is formed of a material with high magnetic permeability, and is deflected in response to complementary magnetic fields induced in the cantilever and in an adjacent electrode. The nanomechanical switch can be fabricated using well known semiconductor fabrication techniques, although semiconductor materials are not necessary for fabrication. The switch can rely upon physical contact between the cantilever and the adjacent electrode for current flow, or can rely upon sufficient proximity between the cantilever and the adjacent electrode to allow for tunneling current flow.

Abstract: A highly miniaturized nanomechanical transistor switch is fabricated using a mechanical cantilever which creates a conductive path between two electrodes in its deflected state. In one embodiment, the cantilever is deflected by an electrostatic attraction arising from a voltage potential between the cantilever and a control electrode. In another embodiment, the cantilever is formed of a material with high magnetic permeability, and is deflected in response to complementary magnetic fields induced in the cantilever and in an adjacent electrode. The nanomechanical switch can be fabricated using well known semiconductor fabrication techniques, although semiconductor materials are not necessary for fabrication. The switch can rely upon physical contact between the cantilever and the adjacent electrode for current flow, or can rely upon sufficient proximity between the cantilever and the adjacent electrode to allow for tunneling current flow.

Abstract: In one aspect of the invention, a system for quantizing an input signal having a time-varying voltage includes a voltage-to-current converter operable to convert the input signal to a proportional current. The system also includes a first negative differential resistance element coupled in series with the voltage-to-current converter. The first negative differential resistance element is operable to switch from a first state to a second state based on the proportional current. In addition, the system includes a reset circuit coupled in parallel with the first negative differential resistance element. The reset circuit includes a second negative differential resistance element, and the reset circuit is operable to reset the first negative differential resistance element to the first state based on a reset signal.

Abstract: In one aspect of the invention, a method for sampling an input signal includes offsetting the input signal with a reference signal. The reference signal represents an offset voltage in the analog-to-digital converter. The method also includes generating a digital output signal based on the offset input signal. The method further includes adjusting the reference signal based on the digital output signal. In addition, the method includes communicating the adjusted reference signal for further offsetting of the input signal.

Abstract: A digital phased array antenna data processing system comprises an antenna array having a plurality of antenna elements connected to an analog-to-digital converter for digitizing received signals. Each analog-to-digital converter is connected to the output of a clock time delay unit also connected to the output of a master clock. The time delay digitized output of the analog-to-digital converter is applied to a data time delay unit for a realignment updated signal from the elements of the antenna.

Abstract: An improved resonant tunneling device (RTD) oscillator is provided by supplying electrical power to the RTD device 23 using a photocell 21 and a light source 25 such that essentially no spurious resonances are possible.

Abstract: Fabrication of copper damascene interconnects includes depositing an oxide layer atop an underlying conductive layer such as a substrate or a metal layer, which is then patterned and etched. A barrier layer having an optional copper seed layer is then deposited atop the patterned oxide layer. The barrier layer is patterned and etched to remove some of the barrier material. Copper is plated atop the barrier layer. CMP polishing is performed to bring the copper layer to the level of the barrier layer. Polishing is continued to further polish down the barrier layer and any remaining copper to the level of the oxide layer. The result is a dishing-free copper damascene structure.

Abstract: Generally and in one form of the invention this is a periodic surface filter comprising at least one element at a surface of the filter and electronic controls to change the optical characteristics of the element. Other methods and devices are disclosed.

Abstract: Apparatus for optical communications (10, 20, 30, 60 90) includes an optically switched resonant tunneling device (12, 22, 42, 62, 92) being exposed to an input light. The optically switched resonant tunneling device (12, 22, 42, 62, 92) generates a first and second voltage levels in response to the intensity level of the input light. A lasing device (16, 28, 46, 68, 74, 100) is coupled to the optically switched resonant tunneling device (12, 22, 42, 62, 92). The lasing device (16, 28, 46, 68, 74, 100) generates and modulates an output light in response to the first and second voltage levels.

Abstract: A resettable latched voltage comparator includes a resonant tunneling diode 10 connected in series with an amplifier 14 and a power source 16, and a reset circuit 12 connected between a circuit output terminal 18 and a second power source 20. Amplifier 14 converts the value of the voltage at an input terminal 22 into a proportional current at terminal 24; diode 10 detects the condition when the current at terminal 24 rises above a specific value equal to the resonant peak current of resonant tunneling diode 10; and reset circuit 12 controllably forces the voltage at terminal 18 of the circuit to a value approximately equal to the output voltage of power source 16 at terminal 29, thereby reducing the bias across diode 10 to approximately zero. A flash analog-to-digital converter configuration includes a plurality of comparators 200.sub.i having their reference voltage inputs biased from a series-connected chain of resistors 210.sub.i. The input terminals 22.sub.

Abstract: A memory device implementing a Kanerva memory system is provided having an address space (12) and key addresses (14) therein. The key addresses (14) partition the address space (12) such that a hypersphere (17) defined by a radius of capture (16) for each key address (14) does not overlap a hypersphere (17) of any other key address (14). By such partitioning, at most one key address (14) can be activated during a read or write operation. Each key address (14) has an address decoder (24) determining if an input address falls within the hypersphere (17) of the key address (14). If so, the key address (14) is activated and a memory element (26) within each key address (14) stores the address data within multiple bit binary counters (28) by incrementing upon storing a binary 1 and decrementing upon storing a binary 0 during a write operation. In read mode, the contents of multiple bit binary counters (28) are transferred out of the memory device (10).

Abstract: A quantum dot logic unit (8) is provided which comprises a row of quantum dots (14, 16, and 18), with each quantum dot separated by vertical heterojunction tunneling barriers (20, 22, 24, and 26). Electric potentials placed on inputs (32, 34, and 36) are operable to modulate quantum states within the quantum dots, thus controlling electron tunneling through the tunneling barriers.

Abstract: A magnetic sensor using heterojunction transistors for detecting magnetically recorded data. The sensor has a pair of heterojunction transistors T1, T2 connected in a differential circuit disposed on a substrate 18. The substrate 18 is carded on the free end of a suspension arm 12 at a distance D from the surface of a disk 14 having magnetically recorded data thereon. The transistors are disposed a distance S apart which is selected with D so that the magnetic field direction at one transistor is generally perpendicular to the disk 14 and the magnetic field direction at the other transistor is generally parallel to the disk 14 when a magnetic transition occurs immediately adjacent the magnetic sensor.

Abstract: Generally and in one form of the invention this is a periodic surface filter comprising at least one element at a surface of the filter and electronic controls to change the optical characteristics of the element. Other methods and devices are disclosed.

Abstract: A quantum effect switching device comprising a substrate 12, first and second tunnel barriers 14 and 18, and a quantum well 16. The current between a drain region 20 and the substrate 12 can be switched by placing a potential on a gate layer 24. The potential on the gate layer 24 selectively modulates the effective dimensions of the quantum well 16 to alter the allowed energy levels within the conduction band of the quantum well 16.

Abstract: Generally and in one form of the invention this is a periodic surface filter comprising at least one element at a surface of the filter and electronic controls to change the optical characteristics of the element. The surface filter is used as a switchable filter in a cavity for a Q-switch.

Abstract: Generally and in one form of the invention this is a periodic surface filter comprising at least one element at a surface of the filter and electronic controls to change the optical characteristics of the element. Other methods and devices are disclosed.

Abstract: Generally and in one form of the invention this is a periodic surface filter comprising at least one element at a surface of the filter and electronic controls to change the optical characteristics of the element. The surface filter comprising and electronically tunable electro-optic material to alter the resonant frequency of the element.