Abstract: A multi-function resonant tunneling logic gate is provided in which a resonant tunneling transistor (12) includes a first terminal, a second terminal, and a third terminal. A plurality of signal inputs are coupled to the first terminal of the resonant tunneling transistor (12) through a summer (10). Furthermore, a biasing input is operable to apply a bias to the first terminal of resonant tunneling transistor (12) such that the transfer characteristic of the resonant tunneling transistor (12) can be shifted relative to the signal inputs.

Abstract: A resonant tunneling diode (400) with lateral carrier transport through tunneling barriers (404, 408) grown as a refilling of trenches etched into a transverse quantum well (410) and defining a quantum wire or quantum dot (406). The fabrication method uses angled deposition to create overhangs at the top of openings which define sublithographic separations for tunneling barrier locations.

Abstract: A magnetic memory cell 10 is provided, which includes a layer 12 of superconducting material. A current path 22 is formed insulatively adjacent layer 12 of superconducting material, such that a current passed through current path 22 induces a magnetic field of a selected magnitude and selected orientation in layer 12 of superconducting material.

Abstract: An electrostatic discharge system (100) worn on an individual's wrist includes an array of field emitters (102) to discharge built up electrostatic charge on the individual into ambient air.

Abstract: This is a vertical field-effect resonant tunneling transistor device comprising: a semi-conducting substrate 46; a drain region 48 above the semi-conducting substrate; a multiple-barrier multi-well resonant tunneling diode 52, 54, 56, 58, 60 above the drain layer; a two dimensional electron gas heterostructure 64 above the multiple-barrier multi-well resonant tunneling diode; a source region 72 extending through the two dimensional electron gas and above the multiple-barrier multi-well resonant tunneling diode; ohmic contacts 70 on the source region, wherein the source region provides an ohmic connection to the two dimensional electron gas; and gate s! 68, 74 besides the source region.

Abstract: An improvement in ventilating protective garments used against chemical agents. There is provided an arrangement of the air supply and the air exhaust so that the air cools the occupant and sweeps across the visor of a headpiece to prevent fogging. A regulator is used to maintain a degree of inflation in the garment by the incoming air.

Abstract: A method of forming an array of electron field emitters at a face of a semiconductor layer is disclosed. The method includes the steps of: providing a semiconductor workpiece having a plurality of field emitter sites on a face thereof; for each site, forming a conductive column having a base coupled to the site and an upstanding end opposed to the base; for each conductive column, forming a metallic column on the upstanding end of the conductive column; depositing an electrically conductive polymer layer over the workpiece; etching the electrically conductive polymer layer to selectively expose the metallic columns; placing the workpiece in an electrolytic etchant solution capable of etching the metallic columns; applying an electric potential between the conductive polymer layer and an anode electrode in the etchant to etch the metallic columns into a respective plurality of sharp emitter tips; and removing the conductive polymer layer.

Abstract: A quantum dot logic unit (8) is provided which comprises a row of quantum dots (14, 16, and 18), with each quantum dot separated by vertical heterojunction tunneling barriers (20, 22, 24, and 26). Electric potentials placed on inputs (32, 34, and 36) are operable to modulate quantum states within the quantum dots, thus controlling electron tunneling through the tunneling barriers.

Abstract: Code word generation by recursive reverse flows in a neural network, and transmission systems encoding using such code words. The neural network (30) may be an array of operational amplifiers (34) as neurons with inverted amplifier output feedback through resistors (32) as the interconnection strengths to the amplifier inputs. The inversion of the amplifier output implies the dynamical flow of the neuron states is away from stored vectors; this contrasts with Hopfield networks which have a dynamical flow to stored states and thus an associative memory function. The method of generating code words recursively uses this reverse dynamical flow with previously generated code words as the stored vectors. That is, the already generated code words define the stored vectors in a neural network, then the reverse dynamical flow finds a new vector away from the stored vectors, and lastly this new vector defines the next code word and the cycle repeats with the augmented set of stored vectors.

Abstract: A quantum effect device implementation of the Shannon Decomposition Function in the form of a Shannon Cell is provided in which a first quantum dot logic unit (50) is coupled between the X input and the output of the Shannon Cell. A second quantum dot logic unit (52) is coupled between the Y input and the output of the Shannon Cell. The control input to the Shannon Cell is coupled to both the first and second quantum dot logic units (50 and 52) such that current flows through the appropriate quantum dot logic unit (50 or 52) depending upon the logic state of the control input.

Abstract: Hierarchical multiprocessors systems with common level expansion modules. The invention includes an architecture for such multiprocessor system.

Abstract: This is a method of forming an array of electron emitters at the face of a semiconductor layer. The method comprises the steps of depositing a layer of polycrystalline silicon on a face of a semiconductor workpiece; doping the polycrystalline silicon layer to render the polycrystalline silicon layer conductive; and for each of a plurality of emitter cells, performing an orientation-dependent polycrystalline silicon etch to define a pyramid for the cell having a base affixed to the workpiece and an upstanding tip opposed to the base. Preferably the method also includes the steps of forming a field effect transistor at the face of the workpiece prior to the depositing of the layer, with the pyramid having a base in conductive contact with the drain of the transistor. The polycrystalline silicon layer may be doped in situ after deposition.

Abstract: A communication system and method that translates a first plurality of information symbols into a plurality of code words, transmits the plurality of code words through a communication channel receives the plurality of code words transmitted through the communication channel, deciphers the plurality of code words transmitted through the communication channel into a second plurality of information symbols that correspond to the first set plurality of information symbols, wherein the plurality of code words are derived from a reverse dynamical flow within a first neural network.

Abstract: Resist (402) is exposed by a beam of positrons (320) in an apparatus (300) similar to an electron beam lithography machine.

Abstract: A package receives and encapsulates an optoelectronic integrated circuit chip. A plurality of optically transmissive filaments have first ends coupled with the chip and second ends opposite the first ends positioned outside the package. In a preferred embodiment, the first ends are flamed off to form spherical lenses, which are then used to contact optically active devices on the integrated circuit chip.

Abstract: Resist (402) is exposed by a beam of positrons (320) is an apparatus (300) similar to an electron beam lithography machine.

Abstract: Optically pumped coupled quantum well devices are disclosed. The devices store bits as carrier packets in depressions in the conduction and/or valence band(s) of a single crystal; the band between the depressions is sloped in a common direction which provides unidirectionality. The carrier packets are shifted from depression to depression by optically exciting the carriers and relying on the arrangement of depressions and band slopes; the excitation is conveniently performed by laser illumination. The depressions may be sufficiently small to discretize the energy levels and thereby permit the partitioning of the depressions into groups with each group having depressions of substantially the same energy level structure. The carriers in depressions of one group can then be selectively excited by illumination with a laser or narrow band monochromatic incoherent light source tuned to the energy level structure; this allows multiphase operation of the shifting function.

Abstract: A serial systolic processor for performing neural network functions. A serial processor (90) provides the digital processing circuits for processing an input serial data stream applied to a serial input (20). A memory (29) stores digital signals representative of interconnection strengths or coefficient data corresponding to autocorrelation matrix elements. Plural outputs (A.sub.O -A.sub.n) of the memory (29) are connected respectively to each of the processor neurons (P.sub.O -P.sub.n) of the serial processor (90). The digital stream is output, unchanged, on processor output bus (22), while a processed data stream is output on bus (30).

Abstract: A programmable resistive element is provided which includes a channel 16 comprising a layer of gallium arsenide. A programming barrier 18 is disposed outwardly from channel 16. A storage gate 20 comprising a layer of intrinsic gallium arsenide is disposed outwardly from programming barrier 18. An insulator 22, comprising a layer of aluminum-gallium-arsenide, is disposed outwardly from storage gate 20. A control gate 24 is disposed outwardly from insulator 22. First and second spaced apart contacts 26 and 28 contact channel 16.

Abstract: A display image correction system (20) corrects display image errors by detecting deviations in the display image from the input image on a pixel-by-pixel basis. The image correction system detects pixel output, and then provides correction signals to the display system's image generator for correcting display image errors (such as intensity errors, or for color systems, RGB color errors). For a color CRT display system with a single-beam image generator, the image correction system (20) includes RGB pixel color output detectors (22R, 22G, 22B) and an image correction subsystem (24). For each pixel the display image, the RGB detectors (22R, 22G, 22B) detect component color amplitude, providing corresponding detector signals to the image correction subsystem (24).