Patents by Inventor Gary Shen

Gary Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040229806
    Abstract: There is provided a hirulog-like peptide. Also provided is the treatment of vascular restenosis including the steps of administering an effective amount of a hirulog-like peptide in a pharmaceutically acceptable carrier whereby administration prevents vascular restenosis. A pharmaceutical composition including a hirulog-like peptide and a pharmaceutically acceptable carrier is also provided. A vector expressing a hirulog-like peptide is also provided. Also provided by the present invention is a method of treating a patient with vascular restenosis by introducing to the patient an amount of a sequence encoding a hirulog-like peptide sufficient to prevent vascular restenosis.
    Type: Application
    Filed: June 18, 2004
    Publication date: November 18, 2004
    Inventor: Gary Shen
  • Publication number: 20020045589
    Abstract: There is provided a hirulog-like peptide. Also provided is the treatment of vascular restenosis including the steps of administering an effective amount of a hirulog-like peptide in a pharmaceutically acceptable carrier whereby administration prevents vascular restenosis. A pharmaceutical composition including a hirulog-like peptide and a pharmaceutically acceptable carrier is also provided. A vector expressing a hirulog-like peptide is also provided. Also provided by the present invention is a method of treating a patient with vascular restenosis by introducing to the patient an amount of a sequence encoding a hirulog-like peptide sufficient to prevent vascular restenosis.
    Type: Application
    Filed: March 30, 2001
    Publication date: April 18, 2002
    Inventor: Gary Shen
  • Patent number: 5962915
    Abstract: Improved commercial single crystal wafers (250), as shipped to end users form a full circle, and comprise a "stress concentration notch" (172) which accurately defines a desired cleavage plane. The stress concentration notch is introduced into the wafers in bulk by means of a properly oriented cut along the length of a single crystal ingot, after machining the ingot to the desired end product diameter, and prior to sawing the ingot into slices. The stress concentration notch uniquely defines the first and second faces of the wafer.
    Type: Grant
    Filed: October 14, 1997
    Date of Patent: October 5, 1999
    Assignee: Anerkan Xtal Technology, Inc
    Inventors: Gary Shen-Cheng Young, Shan-Xiang Zhang
  • Patent number: 5792566
    Abstract: Improved commercial single crystal wafers (250), as shipped to end users form a full circle, and comprise a "stress concentration notch" (172) which accurately defines a desired cleavage plane. The stress concentration notch is introduced into the wafers in bulk by means of a properly oriented cut along the length of a single crystal ingot, after machining the ingot to the desired end product diameter, and prior to sawing the ingot into slices. The stress concentration notch uniquely defines the first and second faces of the wafer.
    Type: Grant
    Filed: July 2, 1996
    Date of Patent: August 11, 1998
    Assignee: American Xtal Technology
    Inventors: Gary Shen-Cheng Young, Shan-Xiang Zhang