Abstract: A solution for semiconductor wafer dicing is disclosed. The solution suppresses the adherence of contamination residues or particles, and reduces or eliminates the corrosion of the exposed metallization areas, during the process of dicing a wafer by sawing. The solution comprises at least one organic acid and/or salt thereof; at least a surfactant and/or at least a base; and deionized water, the composition has a pH is equal or greater than 4. The solution can further comprise, a chelating agent, a defoaming agent, or a dispersing agent.

Abstract: The present invention relates to water-rich formulations and the method using same, to remove bulk photoresists, post-etched and post-ashed residues, residues from Al back-end-of-the-line interconnect structures, as well as contaminations. The formulation comprises: hydroxylamine; corrosion inhibitor containing a mixture of alkyl dihydroxybenzene and hydroxyquinoline; an alkanolamine, a water-soluble solvent or the combination of the two; and at least 50% by weight of water.

Abstract: The present invention is a method of cleaning to removal residue in semiconductor manufacturing processing, comprising contacting a surface to be cleaned with an aqueous formulation having a polymer selected from the group consisting of acrylamido-methyl-propane sulfonate) polymers, acrylic acid-2-acrylamido-2-methylpropane sulfonic acid copolymer and mixtures thereof and a quaternary ammonium hydroxide having greater than 4 carbon atoms or choline hydroxide with a non-acetylinic surfactant. The present invention is also a post-CMP cleaning formulation having the components set forth in the method above.

Abstract: The present invention provides for use of a composition comprising black tea flavonoids as a prebiotic and/or for the treatment or prevention of conditions associated with poor gut health or low immunity. The flavonoids comprise thearubigin in an amount of at least 82% by weight of the tea flavonoids. Also provided is an edible product comprising the black tea flavonoids.

Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).

Abstract: Disclosed is an edible composition for enhanced immunity comprising theanine or a source of theanine and a herb selected from Shankhpushpi, Shatavari, or a mixture thereof.

Abstract: A composition comprising tea, 0.1 to 15% by weight of herb selected from Shankhpushpi, Shatavari, Vidarikhand, Arogyapacha or a mixture thereof; and 0.01 to 0.5% by weight of a flavouring agent is disclosed. Also disclosed is a process for manufacturing the composition.

Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).

Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).

Abstract: A post-CMP cleaning composition and method comprising same are disclosed herein. In one aspect, there is provided a composition comprising: water, an organic base, and a plurality of chelating agents comprised of a poly-amino carboxylic acid and a hydroxylcarboxylic acid wherein the pH of the composition ranges from 9.5 to 11.5.

Abstract: An acidic aqueous slurry composition comprising silica abrasive particles, an oxidizer, a quaternary ammonium hydroxide; and acid having a maximum pKa of about 2.5; and water is provided along with its use for polishing.

Abstract: Removing metal from a semiconductor substrate by dissolving ions of the metal into an electrolyte, comprising the steps of: applying a voltage across a polishing pad and the substrate, while an electropolishing electrolyte is dispensed at an interface of the substrate and the polishing pad, and while pooling the electrolyte about the substrate by the polishing pad.

Abstract: A process for the production of high density hydration resistant sintered lime which comprises washing limestone having impurities of less than 2% to remove external impurities, crushing the washed limestone to a size of 25 mm or below, calcining the limestone at a temperature in the range of 1000 to 1150° C. for a period in the range of 2 to 3 hours to form a calcined mass, hydrating the calcined mass, drying the hydrated mass by known methods, deagglomerating the dried hydrated mass with 1 to 4 weight percent of an additive selected from the group consisting of a transition metal oxide capable of forming a low melting compound, a rare earth metal oxide capable of forming a solid solution, and mixtures thereof, pelletizing the resultant mixture at a pressure of at least 1000 Kg/lcm2, sintering the pellets at a temperature In the range of 1500° C. to 1650° C. for a period In the range of 24 hours and allowing the resultant sintered pellets to cool.

Abstract: A composition for inhibiting corrosion of metal surfaces comprises permanganate and a very low concentration of chromium (VI). The concentration of chromium (VI) in the aqueous solution is less than about 100 micrograms per liter, and the concentration of permanganate is about 0.2% to about 20% by weight of the aqueous solution. In another embodiment of the invention, a composition for inhibiting corrosion of metal surfaces includes permanganate and acetic acid. The concentration of acetic acid in the aqueous solution is between about 0.2% and 2.0% by volume. The concentration of permanganate is about 0.2% to about 20% by weight of the aqueous solution. Other embodiments of the invention include methods of using the present sealant compositions and the resulting corrosion inhibited metal substrates. In yet another embodiment of the present invention there is provided a kit for preparing corrosion inhibiting solutions for metal treatment.