Abstract: A liquid crystal display (LCD) device and a method for fabricating the same is disclosed, to obtain high aperture ratio and to solve the problem due to the force of gravity, which includes first and second substrates facing each other at a predetermined distance; gate and data lines crossing each other on the first substrate, to define a pixel region; a first common line substantially parallel to the gate line; a thin film transistor where the gate and data lines cross; a first insulating interlayer on an entire surface of the first substrate including the thin film transistor; an insulating layer having walls above the gate and data lines; a second common line and a common electrode in the pixel region extending in one direction, and overlapping with the gate line, the data line and the thin film transistor; and a pixel electrode in contact with a drain electrode of the thin film transistor and between the common electrodes of the pixel region at fixed intervals.

Abstract: Provided is an image display device including: an image signal controller generating a driving signal and an image data signal; an image light beam supply unit generating image light beams using a signal applied by the image signal controller; and a light guide plate having a mapping plate reflecting the light beams that are incident from the image light beam supply unit and a display plate receiving the light beams reflected by the mapping plate to display an image.

Abstract: A method of fabricating a thin film transistor array substrate is provided.

Abstract: A liquid crystal display device includes first and second common electrode lines on a substrate extending along a first direction, a pair of adjacent data lines extending along a second direction perpendicular to the first direction to cross the first and second common electrode lines to define a unit pixel region, a gate line extending between the first and second common electrode lines along the first direction and crossing the pair of adjacent data lines, the first and second common electrode lines spaced apart from the gate line by a first distance along the second direction defining a first pixel region and a second pixel region of the unit pixel region, and a thin film transistor formed at the crossing of the gate line and one of the pair of adjacent data lines, the thin film transistor including a pair of drain electrodes, a source electrode, and a portion of the gate line, wherein each of the first and second pixel regions includes a circular pixel electrode and first and second circular common electr

Abstract: The present method of forming a silicon oxide layer comprises providing two frequency excitation plasma CVD device which comprises a high frequency electrode, a susceptor electrode, and two matching box for impedance matching between the electrodes and a power supply, wherein one side electrode constituting a tuning condenser of a matching box toward the high frequency electrode is the high frequency electrode; placing a substrate on the susceptor electrode; applying high frequency electric power on the high frequency electrode and the susceptor electrode respectively; and forming a silicon oxide layer on the substrate by generating plasma with using a reaction gas of which main reaction gas is a mixing gas of monosilane and nitrous oxide.

Abstract: The present invention is related to an IPS-LCD device and a method of fabricating an array substrate for use in the IPS-LCD device, which increase a high aperture ratio and provide a large and enough storage capacitance. A common line formed of an opaque metal is designed to have a small width for the increased aperture ratio. A portion of a pixel electrode overlaps one of common electrodes, thereby forming a supplementary storage capacitor. As a result, with a main storage capacitor comprised of a portion of pixel electrode and a portion of common line, the array substrate of the present invention can have two storage capacitors. A sufficient and satisfactory capacitance can be obtained and the aperture ratio is raised.

Abstract: The present method of forming a silicon oxide layer comprises providing two frequency excitation plasma CVD device which comprises a high frequency electrode, a susceptor electrode, and two matching box for impedance matching between the electrodes and a power supply, wherein one side electrode constituting a tuning condenser of a matching box toward the high frequency electrode is the high frequency electrode; placing a substrate on the susceptor electrode; applying high frequency electric power on the high frequency electrode and the susceptor electrode respectively; and forming a silicon oxide layer on the substrate by generating plasma with using a reaction gas of which main reaction gas is a mixing gas of monosilane and nitrous oxide.

Abstract: An array substrate for a liquid crystal display device includes: a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a semiconductor layer on the gate insulating layer; source and drain electrodes on the semiconductor layer, the source and drain electrodes including a copper layer as an upper layer and a barrier layer as a lower layer; a first passivation layer on the source and drain electrodes; a second passivation layer on the first passivation layer, the second passivation layer having a drain contact hole through the first passivation layer, the drain contact hole exposing the barrier layer; and a pixel electrode connected to the barrier layer through the drain contact hole.

Abstract: A liquid crystal display panel and a fabricating method that forms an insulating film exposing a metal pattern without a photolithography process. The liquid crystal display panel comprises: a metal pattern having first and second surface processing regions having a different reacting property for a specific solution; and an insulating film of a material representing a property identical to that of the second surface processing region, the insulating film being formed on a metal pattern of the second surface processing region in order to expose the first surface processing region of the metal pattern.