Abstract: treatment apparatus including: a tubular treatment tank whose end along a central axis is closed and sectional shape orthogonal to the central axis is a circular shape; a first electrode disposed on one end of the central axis of the treatment tank and having a bar shape; a second electrode disposed on the other end thereof; a power supply applying voltage between the first electrode and the second electrode; a rotation mechanism rotating the first electrode about a central axis of the first electrode; and an air introduction portion introducing the liquid to the one end of the central axis of the treatment tank from a tangential direction of the circular sectional shape of the treatment tank, and causing liquid to swirl about the central axis of the treatment tank therein to generate a gas phase in a swirling flow of the liquid.

Abstract: A liquid treatment device that achieves an effective treatment by forcibly contacting a swirl flow of a hydrogen peroxide-containing treated liquid with a liquid to be treated that has been processed to contain copper ions or iron ions includes a rod-like first electrode, a plate-like second electrode formed of a copper- or iron-containing metal, and a first treatment vessel that causes a liquid to swirl and generate a gas phase in a swirl flow of the liquid. A pulse voltage is applied to the generated gas phase to generate a plasma. The second electrode serves as an anode, and reaches inside of a supply section for a liquid to be treated. The liquid to be treated containing the generated copper ions or iron ions is forcibly brought into contact with hydrogen peroxide generated by the plasma. In this way, the Fenton's reaction effectively takes place, and the liquid treatment performance improves.

Abstract: A liquid treatment device that can improve liquid treatment performance by taking advantage of the Fenton's reaction while efficiently generating plasma for liquid treatment, in addition to enabling stable plasma generation for extended time periods includes a first electrode that is rod-like in shape; a second electrode that is plate-like in shape and is configured from a metal containing copper or iron; and a treatment vessel in which introduced liquid swirls, and generates a gas phase in a swirl flow of the liquid. A plasma is generated by applying a pulse voltage to the generated gas phase, and a negative DC voltage is applied between the first electrode and the second electrode serving as a cathode and an anode, respectively. Under the applied negative voltage, the plate-like second electrode generates copper ions or iron ions, and the copper or iron ions undergo Fenton's reaction with the hydrogen peroxide generated by the plasma so that liquid can be efficiently treated.

Abstract: There are provided a treatment tank generating a gas phase around a rotating center of a rotating flow of a liquid by rotating the introduced liquid, a first electrode whose at least a part is disposed in the treatment tank and in contact with a liquid in the treatment tank, a second electrode disposed so as to be in contact with the liquid in the treatment tank, and a power source applying a voltage between the first electrode and the second electrode to generate plasma in a gas phase, the plasma is generated in the gas phase to generate modification components, the generated modification components are dissolved and dispersed in the liquid, and a modification liquid is generated and retained in the storage tank. The modification liquid is sprayed or scattered from a nozzle into a treatment target space via a supply pump in the form of mist.

Abstract: Plasma is generated in a gas phase in a processing tub to produce a reforming component, the produced reforming component is dissolved in a liquid and is dispersed in the liquid to produce a reforming liquid, the produced reforming liquid is discharged from the processing tub to be stored in the storage tub, and gas is supplied from a gas supplier into the reforming liquid in the storage tub. The supplied gas has a bubble shape, comes into contact with the reforming liquid stored in the storage tub, and is deodorized.

Abstract: A washing machine rinse water purification device and washing apparatus including the washing machine rinse water purification device. The washing machine rinse water purification device includes a first liquid supplier, a processing tub, a buffer tub and a washing tub. In the first liquid supplier, a first liquid introduced from an introduction portion into a processing tub is swirled from an introduction portion to a discharge portion to generate a swirling flow, plasma is generated in a gas phase to produce a reforming component, the produced reforming component is dissolved in the first liquid and is dispersed in the first liquid to produce a reforming liquid, the produced reforming liquid temporarily passes through a buffer tub from a discharge portion and then is supplied into a washing tub as a second liquid.

Abstract: An apparatus for producing reforming liquid includes a treatment tank in which an introduced liquid is swirled so as to generate a gas phase in the vicinity of a swirling center of a swirling flow of the liquid, a first electrode which has at least a portion which is disposed in the treatment tank and comes into contact with the liquid in the treatment tank, a second electrode which is disposed so as to come into contact with the liquid in the treatment tank and a power source which is configured to apply a voltage between the first electrode and the second electrode so as to generate plasma in the gas phase. A reformed liquid is produced in a manner that the plasma is generated in the gas phase so as to form a reformed component, and the formed reformed component is dissolved and dispersed in the liquid.

Abstract: A disassembling apparatus that shatters an object by means of pulsed discharge includes a container that can be filled with a liquid, an anode that is disposed within the container, a cathode that is disposed such that the object can be placed so as to straddle the anode and the cathode, object scattering prevention means that encloses an object disassembling region above the anode and the cathode, and a pulsed power supply that applies a high voltage pulse between the anode and the cathode.

Abstract: An idle-state detection circuit detects that the processor repeats every predetermined number of clocks an operation to load data satisfying a preset idle-state condition from a particular address, and determines that the processor is in an idle state if the number of iterations is greater than a preset specified number of loops.

Abstract: A cache miss judger judges a cache miss when a cache access is executed. An entry region judger judges which of a plurality of entry regions constituted with one or a plurality of cache entries in the cache memory is accessed by each of the cache accesses using at least a part of an index for selecting an arbitrary cache line in the cache memory. A cache miss counter counts number of the cache misses judged by the cache miss judger in each of the entry regions that is made to correspond to each of the cache accesses.

Abstract: A cache miss judger judges a cache miss when a cache access is executed. An entry region judger judges which of a plurality of entry regions constituted with one or a plurality of cache entries in the cache memory is accessed by each of the cache accesses using at least a part of an index for selecting an arbitrary cache line in the cache memory. A cache miss counter counts number of the cache misses judged by the cache miss judger in each of the entry regions that is made to correspond to each of the cache accesses.

Abstract: A semiconductor apparatus comprises a processor having an instruction register inside thereof, a pseudorandom number generating device activated in response to a test operation and generating pseudorandom numbers, an input switchover device for switching over between data input in normal operation and input of the pseudorandom numbers from the pseudorandom number generating device in the test operation to thereby output the data or pseudorandom numbers to the instruction register. The pseudorandom numbers generated in the pseudorandom number generating device are inputted to the instruction register via the input switchover device so that the random instructions are implemented and a random test is implemented with an activation rate equivalent to the same in the normal operation.

Abstract: Correlation between a first node included in a high-level circuit and a second node included in a low-level circuit are determined. The high-level circuit and the low-level circuit are obtained by describing a single logic circuit at two different levels. In logic simulation, the expected value of the first node is “1” and the expected value of the second node is an indefinite value, from which the occurrence of an expected-value error node is detected. In this case, “0” and “1” are assigned to another indefinite-value node that causes the indefinite value of the second node so as to perform logic simulation for each value. And after confirming that the second node has the same value “1” in each logic simulation, the value of the expected-value error node is rewritten with the fixed value “1”. Then, the expected value error between the first and second nodes is corrected, such that the logic simulation can be continuously executed.

Abstract: A semiconductor apparatus comprises a processor having an instruction register inside thereof, a pseudorandom number generating device activated in response to a test operation and generating pseudorandom numbers, an input switchover device for switching over between data input in normal operation and input of the pseudorandom numbers from the pseudorandom number generating device in the test operation to thereby output the data or pseudorandom numbers to the instruction register. The pseudorandom numbers generated in the pseudorandom number generating device are inputted to the instruction register via the input switchover device so that the random instructions are implemented and a random test is implemented with an activation rate equivalent to the same in the normal operation.