Abstract: Provided is a liquid crystal display device, including: a plurality of scanning connection lines formed on at least one side of edges of the image display region, the plurality of scanning connection lines connecting together a scanning signal drive circuit and a plurality of scanning signal lines; a selection circuit formed so as to be interposed between the plurality of scanning connection lines and the plurality of scanning signal lines, the selection circuit being configured to selectively short-circuit one of a plurality of the scanning signal lines to one of the plurality of scanning connection lines based on a selection signal; and a selection signal line connected to the selection circuit, the selection signal line transmitting the selection signal to the selection circuit.

Abstract: To achieve improved detection accuracy and time and position resolutions in an in-cell type capacitive touch sensor embedded in a liquid crystal panel of a liquid crystal display device, a drive electrode of the touch sensor is formed in a boundary region for separating pixel electrodes formed on a surface of a TFT substrate on a liquid crystal side, and a detection electrode is formed in a region of an opposing substrate that opposes the boundary region. A drive signal is supplied to the drive electrode to cause a voltage change, and based on the voltage change in the detection electrode caused thereby, a capacitance change in an opposing part between the drive electrode and the detection electrode is detected, to thereby detect contact of an object to a display surface near the opposing part in a liquid crystal panel.

Abstract: In an organic electroluminescent light emitting display device comprising a plurality of pixels each of which includes an organic electroluminescent element emitting light by a current supplied thereto, a plurality of active elements including a first active element which acquires a data signal and a second active element which regulates the current supplied to the organic electroluminescent element in accordance with the data signal, and a capacitive element storing the data signal, the present invention utilizes a part of the capacitive element arranged in one of the pixels for a light shielding member which shields the plurality of active elements arranged the one of the pixels from light emitted by the organic electroluminescent element arranged therein or another pixel adjacent thereto so as to suppress image quality deterioration and smear appearing in an image display area of the organic electroluminescent light emitting display device.

Abstract: In an organic electroluminescent light emitting display device comprising a plurality of pixels each of which includes an organic electroluminescent element emitting light by a current supplied thereto, a plurality of active elements including a first active element which acquires a data signal and a second active element which regulates the current supplied to the organic electroluminescent element in accordance with the data signal, and a capacitive element storing the data signal, the present invention utilizes a part of the capacitive element arranged in one of the pixels for a light shielding member which shields the plurality of active elements arranged the one of the pixels from light emitted by the organic electroluminescent element arranged therein or another pixel adjacent thereto so as to suppress image quality deterioration and smear appearing in an image display area of the organic electroluminescent light emitting display device.

Abstract: A display apparatus includes a gate electrode formed on a substrate as a portion of a gate line, a gate insulating film formed on the gate electrode, a semiconductor oxide layer formed on the gate insulating film, and a first insulating film formed to cover the semiconductor oxide layer. The display apparatus also includes a drain electrode connected to the semiconductor oxide layer through a first contact hole that is formed at the first insulating film, a second insulating film formed on the first insulating film, a third insulating film formed on the second insulating film, and a pixel electrode formed on the third insulating film. The pixel electrode is connected to the semiconductor oxide layer through a second contact hole that is formed on the semiconductor oxide layer.

Abstract: A thin-film semiconductor device includes a gate electrode formed above a substrate; a gate insulating film formed to cover the gate electrode; a semiconductor layer formed above the gate insulating film and having a channel region; a channel protective layer formed above the semiconductor layer and containing an organic material which includes silicon, oxygen, and carbon; an interfacial layer which is formed in contact with the channel protective layer between the semiconductor layer and the channel protective layer, and which includes carbon as a major component, the carbon originating from the organic material; and a source electrode and a drain electrode which are electrically connected to the semiconductor layer.

Abstract: In the thin-film transistor device: the stacked thickness of either a source electrode or a drain electrode and a corresponding one of silicon layers is the same value or a value close to the same value as the stacked thickness of a first channel layer and a second channel layer; the stacked thickness of the first channel layer and the second channel layer is the same in a region between the source electrode and the drain electrode and above the source electrode and the drain electrode; the first channel layer and the second channel layer are sunken in the region between the source electrode and the drain electrode, following a shape between the source electrode and the drain electrode; and the gate electrode has one region overlapping with the source electrode and an other region overlapping with the drain electrode.

Abstract: In a thin-film semiconductor device, a semiconductor layer has a bandgap energy of 1.6 eV or less, an insulating layer formed above the semiconductor layer includes: a first insulating layer region placed outside of a first contact opening and above one end of a gate electrode; a second insulating layer region placed outside of a second contact opening and above the other end of the gate electrode which opposes the one end; and a third insulating layer region being rectangular and placed between the first contact opening and the second contact opening.

Abstract: In an organic electroluminescent light emitting display device comprising a plurality of pixels each of which includes an organic electroluminescent element emitting light by a current supplied thereto, a plurality of active elements including a first active element which acquires a data signal and a second active element which regulates the current supplied to the organic electroluminescent element in accordance with the data signal, and a capacitive element storing the data signal, the present invention utilizes a part of the capacitive element arranged in one of the pixels for a light shielding member which shields the plurality of active elements arranged the one of the pixels from light emitted by the organic electroluminescent element arranged therein or another pixel adjacent thereto so as to suppress image quality deterioration and smear appearing in an image display area of the organic electroluminescent light emitting display device.

Abstract: A thin-film transistor array device includes a passivation film above first and second bottom gate transistors. A gate wire is below the passivation film. A source wire and a relay wire are above the passivation film. The source wire is electrically connected to a source electrode of the first transistor via a first hole in the passivation film. A conductive oxide film is between the passivation film and both the source wire and the relay electrode and not electrically connected between the source wire and the relay electrode. The conductive oxide film covers an end portion of the gate wire that is exposed via a second hole in the passivation film. The conductive oxide film is between the relay electrode and a current-supply electrode of the second transistor and electrically connects the relay electrode and the current-supply electrode via a third hole in the passivation film.

Abstract: In an organic electroluminescent light emitting display device comprising a plurality of pixels each of which includes an organic electroluminescent element emitting light by a current supplied thereto, a plurality of active elements including a first active element which acquires a data signal and a second active element which regulates the current supplied to the organic electroluminescent element in accordance with the data signal, and a capacitive element storing the data signal, the present invention utilizes a part of the capacitive element arranged in one of the pixels for a light shielding member which shields the plurality of active elements arranged the one of the pixels from light emitted by the organic electroluminescent element arranged therein or another pixel adjacent thereto so as to suppress image quality deterioration and smear appearing in an image display area of the organic electroluminescent light emitting display device.

Abstract: A method of manufacturing a thin-film semiconductor device according to the present disclosure includes: preparing a substrate; forming a gate electrode above the substrate; forming a first insulating film on the gate electrode; forming a semiconductor thin film that is to be a channel layer, on the first insulating film; forming a second insulating film on the semiconductor thin film; irradiating the second insulating film with a beam so as to increase a transmittance of the second insulating film; and forming a source electrode and a drain electrode above the channel layer.

Abstract: In a lateral bipolar transistor including an emitter, a base and a collector which are formed in a semiconductor thin film formed on an insulating substrate, the semiconductor thin film is a semiconductor thin film which is crystallized in a predetermined direction. In addition, in a MOS-bipolar hybrid transistor formed in a semiconductor thin film formed on an insulating substrate, the semiconductor thin film is a semiconductor thin film which is crystallized in a predetermined direction.

Abstract: A thin-film transistor array device includes a passivation film above first and second bottom gate transistors. A source wire is below the passivation film. A gate wire and a relay electrode are above the passivation film. The gate wire is electrically connected to a gate electrode of the first transistor via a first hole in the passivation film. A conductive oxide film is between the passivation film and both the gate wire and the relay electrode and not electrically connected between the gate wire and the relay electrode. The conductive oxide film covers an end portion of the source wire that is exposed via a second hole in the passivation film. The conductive oxide film is between the relay electrode and a current-supply electrode of the second transistor and electrically connects the relay electrode and the current-supply electrode via a third hole in the passivation film.

Abstract: In a lateral bipolar transistor including an emitter, a base and a collector which are formed in a semiconductor thin film formed on an insulating substrate, the semiconductor thin film is a semiconductor thin film which is crystallized in a predetermined direction. In addition, in a MOS-bipolar hybrid transistor formed in a semiconductor thin film formed on an insulating substrate, the semiconductor thin film is a semiconductor thin film which is crystallized in a predetermined direction.

Abstract: A thin-film semiconductor device includes, in order, a substrate, a gate electrode, a gate insulating film, a first channel layer, and a second channel layer. The second channel layer includes a protrusion between first top surface end portions. The protrusion has first lateral surfaces that each extend between one of the first top surface end portions and a top surface of the protrusion. An insulation layer is on the top surface of the protrusion. The insulation layer has second lateral surfaces that each extend to one of second top surface end portions of the insulation layer. Two contact layers are each on one of the second top surface end portions of the insulation layer, adjacent one of the second lateral surfaces of the insulation layer, adjacent one of the first lateral surfaces of the protrusion, and on one of the first top surface end portions of the second channel layer. A source electrode is on one of the two contact layers, and a drain electrode is on the other of the two contact layers.

Abstract: An organic light emitting diode display includes a thin film transistor on a substrate (1). The thin film transistor includes a gate electrode (2), a gate insulating film (3) that covers the gate electrode (2), a first semiconductor film (4) provided on the gate insulating film (3), a second semiconductor film (5) provided on the first semiconductor film (4), a back channel protection insulating film (7) and an ohmic contact film (8) provided on the second semiconductor film (5), and source/drain electrodes (9). A crystallinity of the first semiconductor film (4) is higher than that of the second semiconductor film (5). The back channel protection insulating film (7) is formed as one of an organic insulating film and an organic/inorganic hybrid insulating film. The thin film transistor has excellent off-state characteristics, swing characteristics, and saturation characteristics.

Abstract: A thin-film transistor circuit includes a crystallized semiconductor thin film two-dimensionally partitioned into crystal-grain-defining areas each of which accommodates a crystal grain larger than a predetermined size, thin-film transistors each of which has a channel region placed at the center position of a corresponding one of the crystal-grain-defining areas, and wirings which interconnect the thin-film transistors.

Abstract: In an organic electroluminescent light emitting display device comprising a plurality of pixels each of which includes an organic electroluminescent element emitting light by a current supplied thereto, a plurality of active elements including a first active element which acquires a data signal and a second active element which regulates the current supplied to the organic electroluminescent element in accordance with the data signal, and a capacitive element storing the data signal, the present invention utilizes a part of the capacitive element arranged in one of the pixels for a light shielding member which shields the plurality of active elements arranged the one of the pixels from light emitted by the organic electroluminescent element arranged therein or another pixel adjacent thereto so as to suppress image quality deterioration and smear appearing in an image display area of the organic electroluminescent light emitting display device.

Abstract: A thin-film transistor array device includes a passivation film above first and second bottom gate transistors. A source wire is below the passivation film. A gate wire and a relay electrode are above the passivation film. The gate wire is electrically connected to a gate electrode of the first transistor via a first hole in the passivation film. A conductive oxide film is between the passivation film and both the gate wire and the relay electrode and not electrically connected between the gate wire and the relay electrode. The conductive oxide film covers an end portion of the source wire that is exposed via a second hole in the passivation film. The conductive oxide film is between the relay electrode and a current-supply electrode of the second transistor and electrically connects the relay electrode and the current-supply electrode via a third hole in the passivation film.