Patents by Inventor Geoffrey Alan Scarsbrook
Geoffrey Alan Scarsbrook has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9518338Abstract: A method of producing a large area plate of single crystal diamond from CVD diamond grown on a substrate substantially free of surface defects by chemical vapor deposition (CVD). The homoepitaxial CVD grown diamond and the substrate are severed transverse to the surface of the substrate on which diamond growth took place to produce the large area plate of single crystal CVD diamond.Type: GrantFiled: May 3, 2007Date of Patent: December 13, 2016Assignee: Element Six Technologies LimitedInventors: Geoffrey Alan Scarsbrook, Philip Maurice Martineau, Daniel James Twitchen
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Patent number: 9416005Abstract: A solid state system comprising a host material and a quantum spin defect, wherein the quantum spin defect has a T2 at room temperature of about 300 ?s or more and wherein the host material comprises a layer of single crystal CVD diamond having a total nitrogen concentration of about 20 ppb or less, wherein the surface roughness, Rq of the single crystal diamond within an area defined by a circle of radius of about 5 ?m centered on the point on the surface nearest to where the quantum spin defect is formed is about 10 nm or less, methods for preparing solid state systems and the use of single crystal diamond having a total nitrogen concentration of about 20 ppb or less in spintronic applications are described.Type: GrantFiled: July 22, 2009Date of Patent: August 16, 2016Assignee: Element Six Technologies LimitedInventors: Geoffrey Alan Scarsbrook, Daniel James Twitchen, Matthew Lee Markham
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Patent number: 9410242Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber; a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use; a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; wherein the microwave plasma reactor further comprises an electrically conductive plasma stabilizing annulus disposed around the substrate holder within the plasma chamber.Type: GrantFiled: December 14, 2011Date of Patent: August 9, 2016Assignee: Element Six Technologies LimitedInventors: Geoffrey Alan Scarsbrook, Jonathan James Wilman, Helen Wilman, Joseph Michael Dodson, John Robert Brandon, Steven Edward Coe, Christopher John Howard Wort
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Patent number: 9317811Abstract: Single crystal diamond having a high chemical purity i.e. a low nitrogen content and a high isotopic purity i.e. a low 13C content, methods for producing the same and a solid state system comprising such single crystal diamond are described.Type: GrantFiled: July 22, 2009Date of Patent: April 19, 2016Assignee: Element Six Technologies LimitedInventors: Geoffrey Alan Scarsbrook, Daniel James Twitchen, Matthew Lee Markham
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Patent number: 9249526Abstract: A synthetic single crystal diamond material comprising: a first region comprising electron donor defects; a second region comprising quantum spin defects; and a third region between the first and second regions. The second and third regions have a lower concentration of electron donor defects than the first region. The first and second regions are sufficiently close to allow electrons to be donated from the first region to the second region, thus forming negatively charged quantum spin defects in the second and positively charged defects in the first region, and sufficiently far apart to reduce other coupling interactions between the first and second regions which would otherwise unduly reduce the decoherence time of the plurality of quantum spin defects and/or produce strain broaden of a spectral line width of the plurality of quantum spin defects in the second region.Type: GrantFiled: May 1, 2012Date of Patent: February 2, 2016Assignee: Element Six LimitedInventors: Daniel James Twitchen, Matthew Lee Markham, Geoffrey Alan Scarsbrook
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Patent number: 9157170Abstract: A method of producing a grown single crystal diamond substrate comprising: (a) providing a first diamond substrate which presents a (001) major surface, which major surface is bounded by at least one <100> edge, the length of the said at least one <100> edge exceeding any dimension of the surface that is orthogonal to the said at least one <100> edge by a ratio of at least 1.3:1; and (b) growing diamond material homoepitaxially on the (001) major surface of the diamond material surface under chemical vapour deposition (CVD) synthesis conditions, the diamond material growing both normal to the major (001) surface, and laterally therefrom.Type: GrantFiled: December 15, 2010Date of Patent: October 13, 2015Assignee: Element Six Technologies LimitedInventors: Daniel James Twitchen, Harpreet Kaur Dhillon, Geoffrey Alan Scarsbrook
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Publication number: 20150266741Abstract: A polycrystalline CVD diamond material comprising a surface having a surface roughness Rq of less than 5 nm, wherein said surface is damage free to the extent that if an anisotropic thermal revealing etch is applied thereto, a number density of defects revealed by the anisotropic thermal revealing etch is less than 100 per mm2.Type: ApplicationFiled: April 13, 2015Publication date: September 24, 2015Inventors: Chee-Leong Lee, Erdan Gu, Geoffrey Alan Scarsbrook, Ian Friel, Martin David Dawson
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Patent number: 9115443Abstract: A diamond layer of single crystal CVD diamond which is colored, preferably which has a fancy color, and which has a thickness of greater than 1 mm.Type: GrantFiled: October 7, 2010Date of Patent: August 25, 2015Assignee: Element Six Technologies LimitedInventors: Daniel James Twitchen, Philip Maurice Martineau, Geoffrey Alan Scarsbrook, Bärbel Susanne Charlotte Dorn, Michael Andrew Cooper
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Patent number: 9103050Abstract: A single crystal diamond prepared by CVD and having one or more electronic characteristics; making the diamond suitable for electronic applications. Also provided is a method of making the single crystal CVD diamond.Type: GrantFiled: March 15, 2013Date of Patent: August 11, 2015Assignee: Element Six Technologies LimitedInventors: Geoffrey Alan Scarsbrook, Philip Maurice Martineau, John Lloyd Collins, Ricardo Simon Sussmann, Bärbel Susanne Charlotte Dorn, Andrew John Whitehead, Daniel James Twitchen
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Patent number: 9034200Abstract: The present invention relates to a method of producing a diamond surface including the steps of providing an original diamond surface, subjecting the original diamond surface to plasma etching to remove at least 2 nm of material from the original surface and produce a plasma etched surface, the roughness Rq of the plasma etched surface at the location of the etched surface where the greatest depth of material has been removed satisfying at least one of the following conditions: Rq of the plasma etched surface is less than 1.5 times the roughness of Rq of the original surface, or Rq of the plasma etched surface is less than 1 nm.Type: GrantFiled: January 22, 2008Date of Patent: May 19, 2015Assignee: Element Six Limited Technologies LimitedInventors: Chee-Leong Lee, Erdan Gu, Geoffrey Alan Scarsbrook, Ian Friel, Martin David Dawson
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Patent number: 9036149Abstract: An electrochemical sensor comprising: a reference electrode (4) formed of an electrically conductive synthetic doped diamond material and configured to be located in electrical contact with a solution (8) to be analysed; a sensing electrode (2) formed of an electrically conductive synthetic doped diamond material and configured to be located in contact with the solution (8) to be analysed; an electrical controller (10) configured to conduct stripping voltammetric measurements by applying a voltage to the sensing electrode (2), to change the applied voltage relative to the reference electrode (4), and to measure an electric current flowing through the sensing electrode (2) thereby generating voltammetry data; and a calibration system configured to provide an in-situ calibration for providing a reference point in the voltammetric data since the potential of the diamond reference electrode is non fixed and floating.Type: GrantFiled: May 2, 2012Date of Patent: May 19, 2015Assignee: Element Six Technologies LimitedInventors: Mark Edward Newton, Julie Victoria MacPherson, Laura Anne Hutton, Timothy Peter Mollart, Geoffrey Alan Scarsbrook
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Patent number: 8986645Abstract: A method of producing a CVD single crystal diamond layer on a substrate includes adding into a DVD synthesis atmosphere a gaseous source comprising silicon. The method can be used to mark the diamond material, for instance to provide means by which its synthetic nature can more easily be determined. It can also be exploited to generate single crystal diamond material of high color.Type: GrantFiled: July 6, 2006Date of Patent: March 24, 2015Assignee: Element Six LimitedInventors: Daniel James Twitchen, Geoffrey Alan Scarsbrook, Philip Maurice Martineau, Paul Martyn Spear, Stephen David Williams, Ian Friel
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Publication number: 20150061191Abstract: The present disclosure relates to substrates for use in microwave plasma reactors. Certain substrates include a cylindrical disc of a carbide forming refractory metal having a flat growth surface on which CVD diamond is to be grown and a flat supporting surface opposed to said growth surface. The cylindrical disc may have a diameter of 80 mm or more. The growth surface may have a flatness variation no more than 100 mm The supporting surface may have a flatness variation no more than 100 mm.Type: ApplicationFiled: September 11, 2014Publication date: March 5, 2015Inventors: Carlton Nigel Dodge, Paul Nicolas Inglis, Geoffrey Alan Scarsbrook, Timothy Peter Mollart, Charles Simon James Pickles, Steven Edward Coe, Joseph Michael Dodson, Alexander Lamb Cullen, John Robert Brandon, Christopher John Howard Wort
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Publication number: 20150030786Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber; a substrate holder disposed in the plasma chamber for supporting a substrate on which the synthetic diamond material is to be deposited in use; a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; wherein the gas flow system comprises a gas inlet nozzle array comprising a plurality of gas inlet nozzles disposed opposite the substrate holder for directing process gases towards the substrate holder, the gas inlet nozzle array comprising: at least six gas inlet nozzles disposed in a substantially parallel or divergent orientation relative to a central axis of the plasma chamber; a gas inlet nozzle number density equal to or greater than 0.Type: ApplicationFiled: December 14, 2011Publication date: January 29, 2015Applicant: ELEMENT SIX LIMITEDInventors: Steven Edward Coe, Jonathan James Wilman, Daniel James Twitchen, Geoffrey Alan Scarsbrook, John Robert Brandon, Christopher John Howard Wort
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Patent number: 8936774Abstract: A CVD single crystal diamond material suitable for use in, or as, an optical device or element. It is suitable for use in a wide range of optical applications such as, for example, optical windows, laser windows, optical reflectors, optical refractors and gratings, and etalons. The CVD diamond material is produced by a CVD method in the presence of a controlled low level of nitrogen to control the development of crystal defects and thus achieve a diamond material having key characteristics for optical applications.Type: GrantFiled: January 21, 2010Date of Patent: January 20, 2015Assignee: Element Six Technologies LimitedInventors: Herman Philip Godfried, Geoffrey Alan Scarsbrook, Daniel James Twitchen, Evert Pieter Houwman, Wilhelmus Gertruda Maria Nelissen, Andrew John Whitehead, Clive Edward Hall, Philip Maurice Martineau
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Publication number: 20140356276Abstract: A CVD single crystal diamond material suitable for use in, or as, an optical device or element. It is suitable for use in a wide range of optical applications such as, for example, optical windows, laser windows, optical reflectors, optical refractors and gratings, and etalons. The CVD diamond material is produced by a CVD method in the presence of a controlled low level of nitrogen to control the development of crystal defects and thus achieve a diamond material having key characteristics for optical applications.Type: ApplicationFiled: August 19, 2014Publication date: December 4, 2014Applicant: ELEMENT SIX TECHNOLOGIES LIMITEDInventors: Herman Philip GODFRIED, Geoffrey Alan SCARSBROOK, Daniel James TWITCHEN, Evert Pieter HOUWMAN, Wilhelmus Gertruda Maria NELISSEN, Andrew John WHITEHEAD, Clive Edward HALL, Philip Maurice MARTINEAU
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Patent number: 8859058Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapor deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode between the base and the top plate; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate; and a substrate disposed on the supporting surface, the substrate having a growth surface on which the synthetic diamond material is to be deposited in use, wherein the substrate dimensions and location within the resonance cavity are selected to generate a localized aType: GrantFiled: December 14, 2011Date of Patent: October 14, 2014Assignee: Element Six LimitedInventors: Carlton Nigel Dodge, Paul Nicolas Inglis, Geoffrey Alan Scarsbrook, Timothy Peter Mollart, Charles Simon James Pickles, Steven Edward Coe, Joseph Michael Dodson, Alexander Lamb Cullen, John Robert Brandon, Christopher John Howard Wort
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Publication number: 20140234556Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode between the base and the top plate; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate; and a substrate disposed on the supporting surface, the substrate having a growth surface on which the synthetic diamond material is to be deposited in use, wherein the substrate dimensions and location within the resonance cavity are selected to generate a localizedType: ApplicationFiled: December 14, 2011Publication date: August 21, 2014Applicant: ELEMENT SIX LIMITEDInventors: Carlton Nigel Dodge, Paul Nicolas Inglis, Geoffrey Alan Scarsbrook, Timothy Peter Mollart, Charles Simon James Pickles, Steven Edward Coe, Joseph Michael Dodson, Alexander Lamb Cullen, John Robert Brandon, Christopher John Howard Wort
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Patent number: 8795485Abstract: Microelectrode comprising a body formed from electrically non-conducting material and including at least one region of electrically conducting material and at least one passage extending through the body of non-conducting material and the region of conducting material, the electrically conducting region presenting an area of electrically conducting material to a fluid flowing through the passage in use. An electrochemical cell which includes such a microelectrode is also disclosed.Type: GrantFiled: December 22, 2011Date of Patent: August 5, 2014Assignee: Element Six Technologies LimitedInventors: Andrew John Whitehead, Geoffrey Alan Scarsbrook, Julie Victoria Macpherson, Mark Newton, Patrick Robert Unwin, William Joseph Yost, III
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Publication number: 20140069811Abstract: An electrochemical sensor comprising: a reference electrode (4) formed of an electrically conductive synthetic doped diamond material and configured to be located in electrical contact with a solution (8) to be analysed; a sensing electrode (2) formed of an electrically conductive synthetic doped diamond material and configured to be located in contact with the solution (8) to be analysed; an electrical controller (10) configured to conduct stripping voltammetric measurements by applying a voltage to the sensing electrode (2), to change the applied voltage relative to the reference electrode (4), and to measure an electric current flowing through the sensing electrode (2) thereby generating voltammetry data; and a calibration system configured to provide an in-situ calibration for providing a reference point in the voltammetric data since the potential of the diamond reference electrode is non fixed and floating.Type: ApplicationFiled: May 2, 2012Publication date: March 13, 2014Inventors: Mark Edward Newton, Julie Victoria MacPherson, Laura Anne Hutton, Timothy Peter Mollart, Geoffrey Alan Scarsbrook