Abstract: Electronic field effect devices, and methods of manufacture of these electronic field effect devices are disclosed. In particular, there is disclosed an electronic field effect device which has improved electrical properties due to the formation of a highly mobile two-dimensional charge-carrier gas in a simple structure formed from diamond in combination with polar materials.

Abstract: A synthetic single crystal diamond material comprising: a first region of synthetic single crystal diamond material comprising a plurality of electron donor defects; a second region of synthetic single crystal diamond material comprising a plurality of quantum spin defects; and a third region of synthetic single crystal diamond material disposed between the first and second regions such that the first and second regions are spaced apart by the third region, wherein the second and third regions of synthetic single crystal diamond material have a lower concentration of electron donor defects than the first region of synthetic single crystal diamond material, and wherein the first and second regions are spaced apart by a distance in a range 10 nm to 100 ?m which is sufficiently close to allow electrons to be donated from the first region of synthetic single crystal diamond material to the second region of synthetic single crystal diamond material thus forming negatively charged quantum spin defects in the second

Abstract: A diamond based electrochemical band sensor comprising: a diamond body; and a plurality of boron doped diamond band electrodes disposed within the diamond body, wherein at least a portion of each of the plurality of boron doped diamond band electrodes is doped with boron to a level suitable to achieve metallic conduction, the boron doped diamond electrodes being spaced apart by non-conductive intrinsic layers of diamond, wherein the diamond body comprises a front sensing surface with the plurality of boron doped diamond band electrodes being exposed at said sensing surface and extending in an elongate manner across said surface, and wherein each boron doped diamond electrode has a length/width ratio of at least 10 at the front sensing surface.

Abstract: A method comprising: selecting a diamond material; irradiating the diamond material with electrons to increase toughness and/or wear resistance of the diamond material; and processing the diamond material into one or more diamond tool pieces, wherein the irradiating comprises controlling energy and dosage of irradiation to provide the diamond material with a plurality of isolated vacancy point defects, the isolated vacancy point defects having a concentration in a range 1×1014 to 1×1022 vacancies/cm?3

Abstract: A method comprising: selecting a diamond material; irradiating the diamond material to increase toughness and/or wear resistance of the diamond material; and processing the diamond material into one or more diamond tool pieces, wherein the diamond material is selected from the group consisting of: a HPHT diamond material having a total equivalent isolated nitrogen concentration in the range 1 to 600 ppm; a CVD diamond material having a total equivalent isolated nitrogen concentration in the range 0.

Abstract: A single crystal diamond prepared by CVD and having one or more electronic characteristics; making the diamond suitable for electronic applications. Also provided is a method of making the single crystal CVD diamond.

Abstract: A method comprising: selecting a diamond material; irradiating the diamond material with neutrons to increase toughness and/or wear resistance of the diamond material; and processing the diamond material into one or more diamond tool pieces, wherein the irradiating comprises irradiating the diamond material with neutrons having an energy in the range 1.0 keV to 12 MeV, wherein the irradiating comprises controlling energy and dosage of irradiation to provide the diamond material with a plurality of isolated vacancy point defects, the isolated vacancy point defects having a concentration in a range 1×1014 to 1×1020 vacancies/cm?3.

Abstract: A diamond element (10) having a convex surface is disclosed, the convex surface including a spherical segment for which the maximum peak to valley deviation from a perfect spherical surface is less than about 5 ?m. The diamond element (10) may be a solid polycrystalline diamond material and/or may comprise base material which is coated with diamond. Alternatively or in addition, the RMS deviation from a perfect spherical surface may be less than about 500 nm, or the RMS roughness less than about 30 nm. A diamond element (10) with a radius of curvature less than about 20 mm is also disclosed. In one aspect a diamond element (10) having a conical half-angle greater than about 10° is described. Diamond elements (10) of this type are intended for use as metrology tips.

Abstract: An electrode comprising an electrically conducting diamond plate wherein the diamond plate comprises at least one elongate aperture and having an aperture edge length per unit working area of the diamond plate of greater than about 4 mm/mm2, electrolysis cells comprising such electrodes, methods of treating water using such electrolysis cells and a method of production of ozone are disclosed.

Abstract: Electronic field effect devices, and methods of manufacture of these electronic field effect devices are disclosed. In particular, there is disclosed an electronic field effect device which has improved electrical properties due to the formation of a highly mobile two-dimensional charge-carrier gas in a simple structure formed from diamond in combination with polar materials.

Abstract: A rigid three-dimensional component such as a speaker dome is formed of diamond, preferably fabricated to net shape by CVD diamond synthesis, and includes a coating on one or more major surfaces thereof. The coating is designed to enhance the performance and/or to alter the appearance of the component. In particular, the coating is designed to act as a damping medium and/or provide aesthetic qualities to the component.

Abstract: A single crystal diamond element having a convex surface is disclosed, the convex surface including a spherical segment for which the maximum peak to valley deviation from a perfect spherical surface is less than about 5 ?m. Alternatively or in addition, the RMS deviation from a perfect spherical surface may be less than about 500 nm, or the RMS roughness less than about 30 nm. A single crystal diamond element with a radius of curvature less than about 20 mm is also disclosed. In one aspect a single crystal diamond element having a conical half-angle greater than about 10° is described. The invention also provides a method for forming a rotationally symmetrical surface on a single crystal diamond element, comprising rotating the element about a first axis, applying a laser beam to the element in a direction perpendicular to the first axis, and translating the laser beam in two dimensions in a plane perpendicular to the direction of the beam.

Abstract: The present invention relates to diamond material comprising a boron doped single crystal diamond substrate layer having a first surface and a boron doped single crystal diamond conductive layer on said first surface, wherein the distribution of boron in the conductive layer is more uniform than the distribution of boron in the substrate layer.

Abstract: Electronic field effect devices, and methods of manufacture of these electronic field effect devices are disclosed. In particular, there is disclosed an electronic field effect device which has improved electrical properties due to the formation of a highly mobile two-dimensional charge-carrier gas in a simple structure formed from diamond in combination with polar materials.

Abstract: A method of incorporating a mark of origin, such as a brand mark, or fingerprint in a CVD single crystal diamond material, includes the steps of providing a diamond substrate, providing a source gas, dissociating the source gas thereby allowing homoepitaxial diamond growth, and introducing in a controlled manner a dopant into the source gas in order to produce the mark of origin or fingerprint in the synthetic diamond material. The dopant is selected such that the mark of origin or fingerprint is not readily detectable or does not affect the perceived quality of the diamond material under normal viewing conditions, but which mark of origin or fingerprint is detectable or rendered detectable under specialised conditions, such as when exposed to light or radiation of a specified wavelength, for example. Detection of the mark of origin or fingerprint may be visual detection or detection using specific optical instrumentation, for example.

Abstract: Electronic field effect devices, and methods of manufacture of these electronic field effect devices are disclosed. In particular, there is disclosed an electronic field effect device which has improved electrical properties due to the formation of a highly mobile two-dimensional charge-carrier gas in a simple structure formed from diamond in combination with polar materials.

Abstract: Microelectrode comprising a body formed from electrically non-conducting material and including at least one region of electrically conducting material and at least one passage extending through the body of non-conducting material and the region of conducting material, the electrically conducting region presenting an area of electrically conducting material to a fluid flowing through the passage in use. An electrochemical cell which includes such a microelectrode is also disclosed.

Abstract: Single crystal diamond having a high chemical purity i.e. a low nitrogen content and a high isotopic purity i.e. a low 13C content, methods for producing the same and a solid state system comprising such single crystal diamond are described.

Abstract: A method of producing a single crystal CVD diamond of a desired color which includes the steps of providing single crystal CVD diamond which is colored and heat treating the diamond under conditions suitable to produce the desired color. Colors which may be produced are, for example, in the pink-green range.

Abstract: Microelectrode comprising a body formed from electrically non-conducting material and including at least one region of electrically conducting material and at least one passage extending through the body of non-conducting material and the region of conducting material, the electrically conducting region presenting an area of electrically conducting material to a fluid flowing through the passage in use. An electrochemical cell which includes such a microelectrode is also disclosed.