Abstract: An apparatus is described that includes a semiconductor die package. The semiconductor die package includes a semiconductor die package substrate having a top side and a bottom side. The semiconductor die package includes I/O balls on the bottom side of the semiconductor die package substrate. The I/O balls are to mount to a planar board. The semiconductor die package includes a first semiconductor die mounted on the bottom side of the semiconductor die package substrate. The first semiconductor die is vertically located between the bottom side of the semiconductor die package substrate and a second semiconductor die that is a part of the semiconductor die package.

Abstract: An apparatus is described that includes a redistribution layer and a semiconductor die on the redistribution layer. An electrically conductive layer resides over the semiconductor die. A compound mold resides over the electrically conductive layer.

Abstract: A method for forming a carrier substrate for a semiconductor device, the method includes providing a substrate layer including conductive particles embedded in an electrically insulating material and localized heating of the substrate layer along a desired trace by a laser to form a conductive trace of merged particles along the desired trace.

Abstract: An electronic assembly that includes an electronic component; and an interposer that includes a body having upper and lower surfaces and side walls extending between the upper and lower surfaces, the interposer further including conductive routings that are exposed on at least one of the side walls, wherein the electronic component is connected directly to the interposer. The conductive routings are exposed on each side wall and on the upper and lower surfaces. The electronic assembly may further includes a substrate having a cavity such that the interposer is within the cavity, wherein the cavity includes sidewalls and substrate includes conductive traces that are exposed from the sidewalls of the cavity, wherein the conductive traces that are exposed from the sidewalls of the cavity are electrically connected directly to the conductive routings that are exposed on at least one of the side walls of the interposer.

Abstract: A patch antenna array is fabricated with a package-on-package setup that contains a transceiver. The patch antenna array has a footprint that intersects the transceiver footprint. The package-on-package setup includes through-mold vias that couple to a redistribution layer disposed between the patch antennas and the package-on-package setup.

Abstract: Electronics devices, having vertical and lateral redistribution interconnects, are disclosed. An electronics device comprises an electronics component (e.g., die, substrate, integrated device, etc.), a die(s), and a separately formed redistribution connection layer electrically coupling the die(s) to the electronics component. The redistribution connection layer comprises dielectric layers on either side of at least one redistribution layer. The dielectric layers comprise openings that expose contact pads of the at least one redistribution layer for electrically coupling die(s) and components to each other via the redistribution connection layer. The redistribution connection layer is flexible and wrap/folded around side edges of die(s) to minimize vertical vias. Various devices and associated processes are provided.

Abstract: A power mesh-on-die apparatus includes a solder trace that enhances current flow for a power source trace between adjacent power bumps. The solder trace is also applied between power drain bumps on a power drain trace.

Abstract: A recess in a die backside surface occupies a footprint that accommodates an inductor coil that is formed in metallization above an active surface of the die. Less semiconductive material is therefore close to the inductor coil. A ferromagnetic material is formed in the recess, or a ferromagnetic material is formed on a dielectric layer above the inductor coil. The recess may extend across a die that allows the die to be deflected at the recess.

Abstract: Embodiments include semiconductor packages, such as wafer level chip scale packages (WLCSPs), flip chip chip scale packages (FCCSPs), and fan out packages. The WLCSP includes a first doped region on a second doped region, a dielectric on a redistribution layer, where the dielectric is between the redistribution layer and doped regions. The WLCSP also includes a shield over the doped regions, the dielectric, and the redistribution layer, where the shield includes a plurality of surfaces, and at least one of the plurality of surfaces of the shield is on a top surface of the first doped region. The WLCSP may have interconnects coupled to the second doped region and redistribution layer. The shield may be a conductive shield that is coupled to ground, and the shield may be directly coupled to the redistribution layer and first doped region. The first and second doped regions may include highly doped n-type materials.

Abstract: Package devices (systems and methods for their manufacture) may have an integrated circuit (IC) chip mounted on a top surface of a package substrate of and IC package, and embedded in a mold compound formed onto the top surface. They may also have conductive elements mounted on the top surface of the package substrate, embedded in the mold compound, horizontally disposed at a first vertical sidewall of the package device, and having vertical contact pads exposed at the first vertical sidewall. Conductor material traces of the IC package may electrically couple contacts of the chip to the conductive elements. Traces of the IC package may also electrically couple contacts of the chip to bottom surface contacts of the IC package. The vertical contact pads provide a shorter signal path to another device having vertically mounted surface contacts or opposing contact pads, thus improving signaling to the other device.

Abstract: Systems and methods are provide to form one or more pads on at least one surface associated with a portion of a component, for example, a component associated with a surface-mounted device (SMD). Further, the systems and methods are directed to providing metal (for example, copper, Cu) layers on the surface of one or more terminations (for example, solder termination pads) of an electrical component. In one embodiment, the metal layers include metal termination pads that are fabricated on a carrier layer; components can be soldered to these termination pads, then the components with the metal pads can be debonded from the carrier layer. As such, the solder terminations of the components can be covered by the metal pads. The disclosed systems and methods can permit or otherwise facilitate a wider selection and easy availability of the components to be electrically and/or mechanically connected to semiconductor packages.

Abstract: Semiconductor packages having variable redistribution layer thicknesses are described. In an example, a semiconductor package includes a redistribution layer on a dielectric layer, and the redistribution layer includes first conductive traces having a first thickness and second conductive traces having a second thickness. The first thickness may be different than the second thickness, e.g., the first thickness may be less than the second thickness.

Abstract: A device and method of preventing corrosion of a copper layer in a PCB is disclosed. A first dielectric is disposed on a substrate. A copper layer is plated in an opening in the first dielectric and, after conditioning the copper layer, a redistribution layer is plated on the copper layer. A solder resist layer is disposed above the copper layer. A solder ball is disposed in an opening in the solder resist layer. The solder ball is in conductive contact with the copper layer and in physical contact with the redistribution layer. A non-conductive carbon layer is disposed on and in contact with the redistribution layer or tsi-diehe solder resist layer. The carbon layer is substantially thinner than the copper layer and acts as a diffusion barrier to moisture for the copper layer.

Abstract: A microelectronic package includes at least two semiconductor die, one die stacked over at least partially another. At a least the upper die is oriented with its active surface facing in the direction of a redistribution structure, and one or more wires are coupled to extend from contacts on that active surface into conductive structures in the redistribution structure.

Abstract: A system and method of providing a coil in an electronic communication device in is disclosed. Multiple dielectric layers are deposited and patterned on a semiconductor substrate or insulating mold compound. The dielectric layers provide conductive contact with a contact pad on the underlying structure. Shielding for the coil, including a seed layer covered by an insulating material, is disposed in a via of a lowermost of the dielectric layers. Grounding of the shielding seed layer is through a contact pad on the substrate or a trace between the dielectric layers. A coil is fabricated over the shielding and a solder mask deposited and patterned to cover and insulate the coil. The coil is fabricated in a via of a dielectric layer immediately below the solder mask or above this dielectric layer. Electrical contact is provided by multiple copper and seed layers in the solder mask and dielectric layers.

Abstract: Reduced-profile semiconductor device apparatus are achieved by thinning a semiconductive device substrate at a backside surface to expose a through-silicon via pillar, forming a recess to further expose the through-silicon via pillar, and by seating an electrical bump in the recess to contact both the through-silicon via pillar and the recess. In an embodiment, the electrical bump contacts a semiconductor package substrate to form a low-profile semiconductor device apparatus. In an embodiment, the electrical bump contacts a subsequent die to form a low-profile semiconductor device apparatus.

Abstract: A device and method of preventing corrosion of a copper layer in a PCB is disclosed. A first dielectric is disposed on a substrate. A copper layer is plated in an opening in the first dielectric and, after conditioning the copper layer, a redistribution layer is plated on the copper layer. A solder resist layer is disposed above the copper layer. A solder ball is disposed in an opening in the solder resist layer. The solder ball is in conductive contact with the copper layer and in physical contact with the redistribution layer. A non-conductive carbon layer is disposed on and in contact with the redistribution layer or tsi-diehe solder resist layer. The carbon layer is substantially thinner than the copper layer and acts as a diffusion barrier to moisture for the copper layer.

Abstract: An electrical device includes a redistribution layer structure, an inter-diffusing material contact structure and a vertical electrically conductive structure located between the redistribution layer structure and the inter-diffusing material contact structure. The vertical electrically conductive structure includes a diffusion barrier structure located adjacently to the inter-diffusing material contact structure. Further, the diffusion barrier structure and the redistribution layer structure comprise different lateral dimensions.

Abstract: A microelectronic package including a passive microelectronic device disposed within a package body, wherein the package body is the portion of the microelectronic package which provides support and/or rigidity to the microelectronic package. In a flip-chip type microelectronic package, the package body may comprise a microelectronic substrate to which an active microelectronic device is electrically attached. In an embedded device type microelectronic package, the package body may comprise the material in which the active microelectronic device is embedded.

Abstract: Present disclosure relates to IC packages with integrated thermal contacts. In some embodiments, an IC package includes a package substrate, an IC die that is coupled to the package substrate, and at least one thermal contact for coupling to at least a portion of a heat exchanger, where the thermal contact is limited to being in a region located at a periphery of the IC package. In some embodiments, thermal contacts are such that at least a portion of a heat exchanger is to be attached on the side of the IC package. In some embodiments, thermal contacts may be provided within a recessed portion at the periphery of the IC package. Providing a thermal contact at a periphery of an IC package may enable improved cooling options, especially for systems where there is no or limited space for providing conventional heat exchangers on the top of the package.