Patents by Inventor Georg Soumagne
Georg Soumagne has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8288743Abstract: An ion withdrawal apparatus that withdraws ions emitted from a plasma in an EUV light production apparatus in which a target at an EUV light production point is irradiated with laser light to be made in a plasma state and the target emits EUV light, the ion withdrawal apparatus which includes: a collector mirror that is disposed in a direction opposite to a laser light incidence direction to collect the EUV light and has a hole for the ions to pass therethrough; magnetic line of force production means that produces a magnetic line of force that is parallel or approximately parallel to the laser light incidence direction at or in the vicinity of the EUV light production point; and ion withdrawal means that is disposed on the opposite side of the collector mirror from the EUV light production point and withdraws the ions.Type: GrantFiled: March 18, 2009Date of Patent: October 16, 2012Assignee: Gigaphoton, Inc.Inventors: Yoshifumi Ueno, Osamu Wakabayashi, Tamotsu Abe, Akira Sumitani, Hideo Hoshino, Akira Endo, Georg Soumagne
-
Publication number: 20120256105Abstract: The exposure device is able to supply only EUV radiation to a mask, while eliminating radiation other than the EUV radiation. A multi layer made from a plurality of Mo/Si pair layers is provided upon the front surface of a mirror, and blazed grooves are formed in this multi layer. Radiation which is incident from a light source device is incident upon this mirror, and is reflected or diffracted. Since the reflected EUV radiation (including diffracted EUV radiation) and the radiation of other wavelengths are reflected or diffracted at different angles, accordingly their directions of progression are different. By eliminating the radiation of other wavelengths with an aperture and/or a dumper, it is possible to irradiate a mask only with EUV radiation of high purity.Type: ApplicationFiled: June 12, 2012Publication date: October 11, 2012Applicant: Komatsu Ltd./Gigaphoton, Inc.Inventors: Masato MORIYA, Osamu Wakabayashi, Georg Soumagne
-
Publication number: 20120248342Abstract: An EUV light source is configured for generating an EUV light for an exposure device. The EUV light source includes a chamber, a target supply device configured for supplying a target into the chamber, an optical system for introducing laser light from a driver laser into the chamber and irradiating the target with the laser light to turn the target into plasma from which EUV light is emitted, and an EUV collector mirror in the chamber. The EUV collector mirror may include a multilayered reflecting surface with grooves and collect the EUV light from the plasma to a focal spot. The grooves can be arranged in a concentric fashion, and be configured for diffracting at least light at a wavelength which is the same as that of the laser light from the driver laser.Type: ApplicationFiled: April 2, 2012Publication date: October 4, 2012Applicants: Gigaphoton Inc., Komatsu Ltd.Inventors: Masato MORIYA, Osamu Wakabayashi, Georg Soumagne
-
Publication number: 20120217414Abstract: An ion withdrawal apparatus that withdraws ions emitted from a plasma in an EUV light production apparatus in which a target at an EUV light production point is irradiated with laser light to be made in a plasma state and the target emits EUV light, the ion withdrawal apparatus which includes: a collector mirror that is disposed in a direction opposite to a laser light incidence direction to collect the EUV light and has a hole for the ions to pass therethrough; magnetic line of force production means that produces a magnetic line of force that is parallel or approximately parallel to the laser light incidence direction at or in the vicinity of the EUV light production point; and ion withdrawal means that is disposed on the opposite side of the collector mirror from the EUV light production point and withdraws the ions.Type: ApplicationFiled: May 7, 2012Publication date: August 30, 2012Applicants: GIGAPHOTON INC., KOMATSU LTD.Inventors: Yoshifumi UENO, Osamu WAKABAYASHI, Tamotsu ABE, Akira SUMITANI, Hideo HOSHINO, Akira ENDO, Georg SOUMAGNE
-
Patent number: 8227778Abstract: The exposure device is able to supply only EUV radiation to a mask, while eliminating radiation other than the EUV radiation. A multi layer made from a plurality of Mo/Si pair layers is provided upon the front surface of a mirror, and blazed grooves are formed in this multi layer. Radiation which is incident from a light source device is incident upon this mirror, and is reflected or diffracted. Since the reflected EUV radiation (including diffracted EUV radiation) and the radiation of other wavelengths are reflected or diffracted at different angles, accordingly their directions of progression are different. By eliminating the radiation of other wavelengths with an aperture and/or a dumper, it is possible to irradiate a mask only with EUV radiation of high purity.Type: GrantFiled: May 20, 2009Date of Patent: July 24, 2012Assignees: Komatsu Ltd., Gigaphoton, Inc.Inventors: Masato Moriya, Osamu Wakabayashi, Georg Soumagne
-
Patent number: 8198613Abstract: The EUV light source device eliminates radiation other than EUV radiation from the light which it emits, and supplies only the EUV radiation to an exposure device. A composite layer consisting of a plurality of Mo/Si pair layers is provided upon the front surface of an EUV collector mirror, and blazed grooves are formed in this composite layer. Radiation emitted from a plasma is incident upon this EUV collector mirror, and is reflected or diffracted. The reflected EUV radiation (including diffracted EUV) proceeds towards an intermediate focal point IF. The radiation of other wavelengths proceeds towards some position other than this focal point IF, because its reflection angle or diffraction angle is different. A SPF shield having an aperture portion is provided at the focal point IF. Accordingly, only the EUV radiation passes through the aperture portion and is supplied to the exposure device, while the other radiation is intercepted by the shield.Type: GrantFiled: May 20, 2009Date of Patent: June 12, 2012Assignees: Komatsu Ltd., Gigaphoton, Inc.Inventors: Masato Moriya, Osamu Wakabayashi, Georg Soumagne
-
Publication number: 20120097869Abstract: In an extreme ultraviolet light source apparatus generating an extreme ultraviolet light from a plasma generated by irradiating a target, which is a droplet D of molten Sn, with a laser light, and controlling the flow direction of ion generated at the generation of the extreme ultraviolet light by a magnetic field or an electric field, an ion collection cylinder 20 is arranged for collecting the ion, and ion collision surfaces Sa and Sb of the ion collection cylinder 20 are provided with or coated with Si, which is a metal whose sputtering rate with respect to the ion is less than one atom/ion.Type: ApplicationFiled: October 17, 2011Publication date: April 26, 2012Applicant: Gigaphoton, Inc.Inventors: Yoshifumi Ueno, Georg Soumagne, Shiniji Nagai, Akira Endo, Tatsuya Yanagida
-
Patent number: 8143606Abstract: An extreme ultra violet light source device of a laser produced plasma type, in which charged particles such as ions emitted from plasma can be efficiently ejected. The extreme ultra violet light source device includes: a target nozzle that supplies a target material; a laser oscillator that applies a laser beam to the target material supplied from the target nozzle to generate plasma; collector optics that collects extreme ultra violet light radiated from the plasma; and a magnetic field forming unit that forms an asymmetric magnetic field in a position where the laser beam is applied to the target material.Type: GrantFiled: March 29, 2007Date of Patent: March 27, 2012Assignees: Komatsu Ltd., Gigaphoton Inc.Inventors: Hiroshi Komori, Yoshifumi Ueno, Georg Soumagne
-
Patent number: 8067756Abstract: In an extreme ultraviolet light source apparatus generating an extreme ultraviolet light from a plasma generated by irradiating a target, which is a droplet D of molten Sn, with a laser light, and controlling the flow direction of ion generated at the generation of the extreme ultraviolet light by a magnetic field or an electric field, an ion collection cylinder 20 is arranged for collecting the ion, and ion collision surfaces Sa and Sb of the ion collection cylinder 20 are provided with or coated with Si, which is a metal whose sputtering rate with respect to the ion is less than one atom/ion.Type: GrantFiled: December 23, 2009Date of Patent: November 29, 2011Assignee: Gigaphoton, Inc.Inventors: Yoshifumi Ueno, Georg Soumagne, Shinji Nagai, Akira Endo, Tatsuya Yanagida
-
Publication number: 20110163247Abstract: In an extreme ultra violet light source apparatus of a laser produced plasma type, charged particles such as ions emitted from plasma are promptly ejected to the outside of a chamber. The extreme ultra violet light source apparatus includes a chamber in which extreme ultra violet light is generated, a target supply unit for supplying a target material to a predetermined position within the chamber, a driver laser for applying a laser beam to the target material supplied by the target supply unit to generate plasma, a collector mirror for collecting the extreme ultra violet light radiated from the plasma to output the extreme ultra violet light, a magnetic field forming unit for forming an asymmetric magnetic field in a generation position of the plasma by using a coil, and a charged particle collection mechanism provided on at least one of two surfaces of the chamber to which lines of magnetic force generated by the coil extend.Type: ApplicationFiled: March 14, 2011Publication date: July 7, 2011Inventors: Georg SOUMAGNE, Yoshifumi Ueno, Hiroshi Komori, Akira Sumitani, Katsunobu Nishihara, Young Gwang Kang, Masanori Nunami
-
Patent number: 7928418Abstract: In an extreme ultra violet light source apparatus of a laser produced plasma type, charged particles such as ions emitted from plasma are promptly ejected to the outside of a chamber. The extreme ultra violet light source apparatus includes a chamber in which extreme ultra violet light is generated, a target supply unit for supplying a target material to a predetermined position within the chamber, a driver laser for applying a laser beam to the target material supplied by the target supply unit to generate plasma, a collector mirror for collecting the extreme ultra violet light radiated from the plasma to output the extreme ultra violet light, a magnetic field forming unit for forming an asymmetric magnetic field in a generation position of the plasma by using a coil, and a charged particle collection mechanism provided on at least one of two surfaces of the chamber to which lines of magnetic force generated by the coil extend.Type: GrantFiled: April 13, 2009Date of Patent: April 19, 2011Assignees: Gigahoton Inc., Osaka UniversityInventors: Georg Soumagne, Yoshifumi Ueno, Hiroshi Komori, Akira Sumitani, Katsunobu Nishihara, Young Gwang Kang, Masanori Nunami
-
Patent number: 7915600Abstract: An extreme ultra violet light source apparatus has a relatively high output for exposure and suppresses the production of debris as much as possible instead of disposing of debris that has been produced. The extreme ultra violet light source apparatus includes: a chamber in which extreme ultra violet light is generated; a target supply unit for supplying solid tin or lithium as a target to a predetermined position within the chamber; a CO2 laser for applying a laser beam based on pulse operation to the target supplied by the target supply unit so as to generate plasma; and a collector mirror having a multilayer film on a reflecting surface thereof, for collecting the extreme ultra violet light radiated from the plasma to output the extreme ultra violet light.Type: GrantFiled: October 10, 2007Date of Patent: March 29, 2011Assignees: Komatsu Ltd., Gigaphoton Inc.Inventors: Yoshifumi Ueno, Georg Soumagne, Akira Sumitani, Osamu Wakabayashi
-
Publication number: 20100213395Abstract: In an extreme ultraviolet light source apparatus generating an extreme ultraviolet light from a plasma generated by irradiating a target, which is a droplet D of molten Sn, with a laser light, and controlling the flow direction of ion generated at the generation of the extreme ultraviolet light by a magnetic field or an electric field, an ion collection cylinder 20 is arranged for collecting the ion, and ion collision surfaces Sa and Sb of the ion collection cylinder 20 are provided with or coated with Si, which is a metal whose sputtering rate with respect to the ion is less than one atom/ion.Type: ApplicationFiled: December 23, 2009Publication date: August 26, 2010Inventors: Yoshifumi UENO, Georg Soumagne, Shinji NAGAI, Akira ENDO, Tatsuya YANAGIDA
-
Publication number: 20100176312Abstract: In a laser produced plasma type extreme ultra violet light source apparatus, charged particles such as ions emitted from plasma can be efficiently ejected by the action of a magnetic field and secondary production of contaminants can be suppressed. The extreme ultra violet light source apparatus includes: a target nozzle for supplying a target material; a laser oscillator for applying a laser beam to the target material supplied by the target nozzle to generate plasma; an EUV collector mirror for collecting extreme ultra violet light radiated from the plasma; and an electromagnet for forming a magnetic field in a position where the laser beam is applied to the target material, wherein an aperture of the electromagnet is formed according to a shape of lines of magnetic flux of the magnetic field.Type: ApplicationFiled: January 13, 2009Publication date: July 15, 2010Inventors: Hiroshi Komori, Yoshifumi Ueno, Georg Soumagne
-
Publication number: 20090289205Abstract: The EUV light source device eliminates radiation other than EUV radiation from the light which it emits, and supplies only the EUV radiation to an exposure device. A composite layer consisting of a plurality of Mo/Si pair layers is provided upon the front surface of an EUV collector mirror, and blazed grooves are formed in this composite layer. Radiation emitted from a plasma is incident upon this EUV collector mirror, and is reflected or diffracted. The reflected EUV radiation (including diffracted EUV) proceeds towards an intermediate focal point IF. The radiation of other wavelengths proceeds towards some position other than this focal point IF, because its reflection angle or diffraction angle is different. A SPF shield having an aperture portion is provided at the focal point IF. Accordingly, only the EUV radiation passes through the aperture portion and is supplied to the exposure device, while the other radiation is intercepted by the shield.Type: ApplicationFiled: May 20, 2009Publication date: November 26, 2009Applicants: KOMATSU LTD., GIGAPHOTON INC.Inventors: Masato Moriya, Osamu Wakabayashi, Georg Soumagne
-
Publication number: 20090267003Abstract: The exposure device is able to supply only EUV radiation to a mask, while eliminating radiation other than the EUV radiation. A multi layer made from a plurality of Mo/Si pair layers is provided upon the front surface of a mirror, and blazed grooves are formed in this multi layer. Radiation which is incident from a light source device is incident upon this mirror, and is reflected or diffracted. Since the reflected EUV radiation (including diffracted EUV radiation) and the radiation of other wavelengths are reflected or diffracted at different angles, accordingly their directions of progression are different. By eliminating the radiation of other wavelengths with an aperture and/or a dumper, it is possible to irradiate a mask only with EUV radiation of high purity.Type: ApplicationFiled: May 20, 2009Publication date: October 29, 2009Applicants: Komatsu Ltd., Gigaphoton Inc.Inventors: Masato MORIYA, Osamu WAKABAYASHI, Georg SOUMAGNE
-
Publication number: 20090261277Abstract: In an extreme ultra violet light source apparatus of a laser produced plasma type, charged particles such as ions emitted from plasma are promptly ejected to the outside of a chamber. The extreme ultra violet light source apparatus includes a chamber in which extreme ultra violet light is generated, a target supply unit for supplying a target material to a predetermined position within the chamber, a driver laser for applying a laser beam to the target material supplied by the target supply unit to generate plasma, a collector mirror for collecting the extreme ultra violet light radiated from the plasma to output the extreme ultra violet light, a magnetic field forming unit for forming an asymmetric magnetic field in a generation position of the plasma by using a coil, and a charged particle collection mechanism provided on at least one of two surfaces of the chamber to which lines of magnetic force generated by the coil extend.Type: ApplicationFiled: April 13, 2009Publication date: October 22, 2009Inventors: Georg Soumagne, Yoshifumi Ueno, Hiroshi Komori, Akira Sumitani, Katsunobu Nishihara, Young Gwang Kang, Masanori Nunami
-
Publication number: 20090261242Abstract: An ion withdrawal apparatus that withdraws ions emitted from a plasma in an EUV light production apparatus in which a target at an EUV light production point is irradiated with laser light to be made in a plasma state and the target emits EUV light, the ion withdrawal apparatus which includes: a collector mirror that is disposed in a direction opposite to a laser light incidence direction to collect the EUV light and has a hole for the ions to pass therethrough; magnetic line of force production means that produces a magnetic line of force that is parallel or approximately parallel to the laser light incidence direction at or in the vicinity of the EUV light production point; and ion withdrawal means that is disposed on the opposite side of the collector mirror from the EUV light production point and withdraws the ions.Type: ApplicationFiled: March 18, 2009Publication date: October 22, 2009Applicants: GIGAPHOTON INC., KOMATSU LTD.Inventors: Yoshifumi UENO, Osamu WAKABAYASHI, Tamotsu ABE, Akira SUMITANI, Hideo HOSHINO, Akira ENDO, Georg SOUMAGNE
-
Publication number: 20080087840Abstract: An extreme ultra violet light source apparatus having relatively high output for exposure, in which debris are suppressed to be produced as much as possible in stead of disposing debris that has been once produced. The extreme ultra violet light source apparatus includes: a chamber in which extreme ultra violet light is generated; a target supply unit for supplying solid tin or lithium as a target to a predetermined position within the chamber; a CO2 laser for applying a laser beam based on pulse operation to the target supplied by the target supply unit so as to generate plasma; and a collector mirror having a multilayer film on a reflecting surface thereof, for collecting the extreme ultra violet light radiated from the plasma to output the extreme ultra violet light.Type: ApplicationFiled: October 10, 2007Publication date: April 17, 2008Applicants: KOMATSU LTD., GIGAPHOTON INC.Inventors: Yoshifumi UENO, Georg SOUMAGNE, Akira SUMITANI, Osamu WAKABAYASHI
-
Publication number: 20070228298Abstract: An extreme ultra violet light source device of a laser produced plasma type, in which charged particles such as ions emitted from plasma can be efficiently ejected. The extreme ultra violet light source device includes: a target nozzle that supplies a target material; a laser oscillator that applies a laser beam to the target material supplied from the target nozzle to generate plasma; collector optics that collects extreme ultra violet light radiated from the plasma; and a magnetic field forming unit that forms an asymmetric magnetic field in a position where the laser beam is applied to the target material.Type: ApplicationFiled: March 29, 2007Publication date: October 4, 2007Inventors: Hiroshi Komori, Yoshifumi Ueno, Georg Soumagne