Patents by Inventor George Bajor

George Bajor has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4771016
    Abstract: A method of forming a high quality silicon on insulator semiconductor device using wafer bonding. The annealing time for the wafer bonding process is substantially reduced through the use of a rapid thermal annealer, thereby resulting in minimizing the redistribution of the doping concentration resulting from the annealing process.
    Type: Grant
    Filed: April 24, 1987
    Date of Patent: September 13, 1988
    Assignee: Harris Corporation
    Inventors: George Bajor, Joseph S. Raby
  • Patent number: 4670970
    Abstract: The present invention provides an improved method of forming semiconductor fuses involving the use of silicide formation by a low temperature process which avoids heat related damage to other device components and circuitry and which provides better electrical reliability than fuses formed by alternative porcesses. According to the present invention, silicides of noble and refractory metals can be formed by solid phase diffusion to form vertical fuses which are conductive after silicide formation.
    Type: Grant
    Filed: April 12, 1985
    Date of Patent: June 9, 1987
    Assignee: Harris Corporation
    Inventor: George Bajor
  • Patent number: 4606936
    Abstract: Stress is eliminated between a dielectrically passivated silicon wafer and a thick polycrystalline silicon layer by depositing a low melting transition layer such as a doped silica glass over the passivated silicon wafer.
    Type: Grant
    Filed: April 12, 1985
    Date of Patent: August 19, 1986
    Assignee: Harris Corporation
    Inventors: George Bajor, Charles Messmer