Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for polishing three dimensional semiconductor or memory substrates comprising a polishing layer of a polyurethane reaction product of a thermosetting reaction mixture of a curative of 4,4?-methylenebis(3-chloro-2,6-diethylaniline) (MCDEA) or mixtures of MCDEA and 4,4?-methylene-bis-o-(2-chloroaniline) (MbOCA), and a polyisocyanate prepolymer formed from one or two aromatic diisocyanates, such as toluene diisocyanate (TDI), or a mixture of an aromatic diisocyanate and an alicyclic diisocyanate, and a polyol of polytetramethylene ether glycol (PTMEG), polypropylene glycol (PPG), or a polyol blend of PTMEG and PPG and having an unreacted isocyanate (NCO) concentration of from 8.6 to 11 wt. %. The polyurethane in the polishing layer has a Shore D hardness according to ASTM D2240-15 (2015) of from 50 to 90, a shear storage modulus (G?) at 65° C.

Abstract: The invention provides a polymer-polymer composite polishing pad useful for polishing or planarizing a substrate of at least one of semiconductor, optical and magnetic substrates. The polymer-polymer composite polishing pad includes a polishing layer having a polishing surface for polishing or planarizing the substrate; a polymeric matrix forming the polishing layer and including gas-filled or liquid-filled polymeric microelements; and fluoropolymer particles embedded in the polymeric matrix. The fluoropolymer particles have a tensile strength lower than the tensile strength of the polymeric matrix wherein diamond abrasive materials cut the fluoropolymer to form a reduced number of pad debris particles in the 1 ?m to 10 ?m size range.

Abstract: The present invention provides methods of manufacturing a chemical mechanical polishing (CMP polishing) layer for polishing substrates, such as semiconductor wafers comprising providing a composition of a plurality of liquid-filled microelements having a polymeric shell; classifying the composition via centrifugal air classification to remove fines and coarse particles and to produce liquid-filled microelements having a density of 800 to 1500 g/liter; and, forming the CMP polishing layer by (i) converting the classified liquid-filled microelements into gas-filled microelements by heating them, then mixing them with a liquid polymer matrix forming material and casting or molding the resulting mixture to form a polymeric pad matrix, or (ii) combining the classified liquid-filled microelements directly with the liquid polymer matrix forming material, and casting or molding.

Abstract: The invention provides a method for polishing or planarizing a substrate. First, the method comprises attaching a polymer-polymer composite polishing pad to a polishing device. The polishing pad has a polymer matrix and fluoropolymer particles embedded in the polymeric matrix. The fluoropolymer particles have a zeta potential more negative than the polymeric matrix. Cationic particle-containing slurry is applied to the polishing pad. Conditioning the polymer-polymer composite polishing pad exposes the fluoropolymer particles to the polishing surface and creates fluoropolymer-containing debris particles in the slurry. Polishing or planarizing the substrate with the increased electronegativity from the fluoropolymer at the polishing surface and in the fluoropolymer-containing debris particles stabilizes the cationic particle-containing slurry to decreases the precipitation rate of the cationic particle-containing slurry.

Abstract: The invention provides a polymer-polymer composite polishing method comprising a polishing layer having a polishing surface for polishing or planarizing a substrate. The method includes attaching a polymer-polymer composite having a polishing layer and a polymeric matrix. The polymer matrix has fluoropolymer particles embedded in the polymeric matrix. Then a cationic particle slurry is applied to the polymer-polymer composite polishing pad. Conditioning the polymer-polymer composite polishing pad with an abrasive cuts the polymer-polymer composite polishing pad; and rubbing the cut polymer-polymer composite polishing pad against the substrate forms the polishing surface. The polishing surface has a fluorine concentration measured in atomic percent at a penetration depth of 1 to 10 nm of at least ten percent higher than the bulk fluorine concentration measured with at a penetration depth of 1 to 10 ?m to polish or planarize the substrate.

Abstract: The invention provides a polymer-polymer composite polishing pad comprising a polishing layer having a polishing surface for polishing or planarizing a substrate. A polymeric matrix forms the polishing layer. Fluoropolymer particles are embedded in the polymeric matrix. Wherein diamond abrasive materials cut the fluoropolymer particles and rubbing the cut fluoropolymer against a patterned silicon wafer forms a thin film covering at least a portion of the polishing layer and the thin film has a zeta potential more negative than the polymeric matrix at a pH of 7. The polishing surface formed from rubbing with the wafer has a fluorine concentration at a penetration depth of 1 to 10 nm of at least ten atomic percent higher than the bulk fluorine concentration at a penetration depth of 1 to 10 ?m.

Abstract: The invention provides a method for polishing or planarizing a substrate. First, the method comprises attaching a polymer-polymer composite polishing pad to a polishing device. The polishing pad has a polymer matrix and fluoropolymer particles embedded in the polymeric matrix. The fluoropolymer particles have a zeta potential more negative than the polymeric matrix. Cationic particle-containing slurry is applied to the polishing pad. Conditioning the polymer-polymer composite polishing pad exposes the fluoropolymer particles to the polishing surface and creates fluoropolymer-containing debris particles in the slurry. Polishing or planarizing the substrate with the increased electronegativity from the fluoropolymer at the polishing surface and in the fluoropolymer-containing debris particles stabilizes the cationic particle-containing slurry to decreases the precipitation rate of the cationic particle-containing slurry.

Abstract: The invention provides a polymer-polymer composite polishing method comprising a polishing layer having a polishing surface for polishing or planarizing a substrate. The method includes attaching a polymer-polymer composite having a polishing layer and a polymeric matrix. The polymer matrix has fluoropolymer particles embedded in the polymeric matrix. Then a cationic particle slurry is applied to the polymer-polymer composite polishing pad. Conditioning the polymer-polymer composite polishing pad with an abrasive cuts the polymer-polymer composite polishing pad; and rubbing the cut polymer-polymer composite polishing pad against the substrate forms the polishing surface. The polishing surface has a fluorine concentration measured in atomic percent at a penetration depth of 1 to 10 nm of at least ten percent higher than the bulk fluorine concentration measured with at a penetration depth of 1 to 10 ?m to polish or planarize the substrate.

Abstract: The invention provides a polymer-polymer composite polishing pad useful for polishing or planarizing a substrate of at least one of semiconductor, optical and magnetic substrates. The polymer-polymer composite polishing pad includes a polishing layer having a polishing surface for polishing or planarizing the substrate; a polymeric matrix forming the polishing layer and including gas-filled or liquid-filled polymeric microelements; and fluoropolymer particles embedded in the polymeric matrix. The fluoropolymer particles have a tensile strength lower than the tensile strength of the polymeric matrix wherein diamond abrasive materials cut the fluoropolymer to form a reduced number of pad debris particles in the 1 ?m to 10 ?m size range.

Abstract: A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising (i) one or more diisocyanate, polyisocyanate or polyisocyanate prepolymer, (ii) from 40 to 85 wt. % based on the total weight of (i) and (ii) of one or more blocked diisocyanate, polyisocyanate or polyisocyanate prepolymer which contains a blocking agent and has a deblocking temperature of from 80 to 160° C., and (iii) one or more aromatic diamine curative. The reaction mixture has a gel time at 80° C. and a pressure of 101 kPa of from 2 to 15 minutes; the polyurethane reaction product has a residual blocking agent content of 2 wt. % or less; and the polishing layer exhibits a density of from 0.6 to 1.2 g/cm3.

Abstract: The present invention concerns a chemical mechanical polishing pad having a polishing layer that possesses a consistent positive zeta potential across the entire surface. Also disclosed is a chemical mechanical polishing method using the polishing pad together with a positively charged slurry.

Abstract: A CMP polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a (i) curative of from 15 to 30 wt. % of an amine initiated polyol having an average of from 3 to less than 5 hydroxyl groups and a number average molecular weight of 150 to 400, and from 70 to 85 wt. % of an aromatic diamine and a (ii) polyisocyanate prepolymer having a number average molecular weight of from 600 to 5,000 and having an unreacted isocyanate content ranging from 6.5 to 11%. The CMP polishing pad has a tunable tan-delta peak temperature at from 50 to 80° C. which has a value of from 0.2 to 0.8 at the tan-delta peak temperature and is useful for polishing a variety of substrates.

Abstract: The present invention concerns a chemical mechanical polishing pad having a polishing layer that possesses a consistent positive zeta potential across the entire surface. Also disclosed is a chemical mechanical polishing method using the polishing pad together with a positively charged slurry.

Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for polishing three dimensional semiconductor or memory substrates comprising a polishing layer of a polyurethane reaction product of a thermosetting reaction mixture of a curative of 4,4?-methylenebis(3-chloro-2,6-diethylaniline) (MCDEA) or mixtures of MCDEA and 4,4?-methylene-bis-o-(2-chloroaniline) (MbOCA), and a polyisocyanate prepolymer formed from one or two aromatic diisocyanates, such as toluene diisocyanate (TDI), or a mixture of an aromatic diisocyanate and an alicyclic diisocyanate, and a polyol of polytetramethylene ether glycol (PTMEG), polypropylene glycol (PPG), or a polyol blend of PTMEG and PPG and having an unreacted isocyanate (NCO) concentration of from 8.6 to 11 wt. %. The polyurethane in the polishing layer has a Shore D hardness according to ASTM D2240-15 (2015) of from 60 to 90, a shear storage modulus (G?) at 65° C.

Abstract: A CMP polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a (i) curative of from 15 to 30 wt. % of an amine initiated polyol having an average of from 3 to less than 5 hydroxyl groups and a number average molecular weight of 150 to 400, and from 70 to 85 wt. % of an aromatic diamine and a (ii) polyisocyanate prepolymer having a number average molecular weight of from 600 to 5,000 and having an unreacted isocyanate content ranging from 6.5 to 11%. The CMP polishing pad has a tunable tan-delta peak temperature at from 50 to 80° C. which has a value of from 0.2 to 0.8 at the tan-delta peak temperature and is useful for polishing a variety of substrates.

Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for polishing, for example, a semiconductor substrate, having one or more endpoint detection windows (windows) which at a thickness of 2 mm would have a UV cut-off at a wavelength of 325 nm or lower which are the product of a reaction mixture of (A) from 30 to 56 wt. % of one or more cycloaliphatic diisocyanates or polyisocyanates with (B) from 43 to 69.9999 a polyol mixture of (i) a polymeric diol having an average molecular weight of from 500 to 1,500, such as a polycarbonate diol for hard windows and a polyether polyol for soft windows and (ii) a triol having an average to molecular weight of from 120 to 320 in a weight ratio of (B)(i) polymeric diol to (B)(ii) triol ranging from 1.6:1 to 5.2:1, and a catalyst, preferably a secondary or tertiary amine or bismuth neodecanoate, all weight percent's based on the total solids weight of the reaction mixture.

Abstract: The method forms a porous polyurethane polishing pad by coagulating thermoplastic polyurethane to create a porous matrix having large pores extending upward from a base surface and open to an upper surface. The large pores are interconnected with small pores. Heating a press to temperature below or above the softening onset temperature of the thermoplastic polyurethane forms a series of pillows. Plastic deforming side walls of the pillow structures forms downwardly sloped side walls. The downwardly sloped side walls extend from all sides of the pillow structures. The large pores open to the downwardly sloped sidewalls are less vertical than the large pores open to the top polishing surface and are offset 10 to 60 degrees from the vertical direction.

Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for polishing, for example, a semiconductor substrate, having one or more endpoint detection windows (windows) which at a thickness of 2 mm would have a UV cut-off at a wavelength of 325 nm or lower which are the product of a reaction mixture of (A) from 30 to 56 wt. % of one or more cycloaliphatic diisocyanates or polyisocyanates with (B) from 43 to 69.9999 a polyol mixture of (i) a polymeric diol having an average molecular weight of from 500 to 1,500, such as a polycarbonate diol for hard windows and a polyether polyol for soft windows and (ii) a triol having an average molecular weight of from 120 to 320 in a weight ratio of (B)(i) polymeric diol to (B)(ii) triol ranging from 1.6:1 to 5.2:1, and a catalyst, preferably a secondary or tertiary amine, all weight percent's based on the total solids weight of the reaction mixture.

Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for polishing three dimensional semiconductor or memory substrates comprising a polishing layer of a polyurethane reaction product of a thermosetting reaction mixture of a curative of 4,4?-methylenebis(3-chloro-2,6-diethylaniline) (MCDEA) or mixtures of MCDEA and 4,4?-methylene-bis-o-(2-chloroaniline) (MbOCA), and a polyisocyanate prepolymer formed from one or two aromatic diisocyanates, such as toluene diisocyanate (TDI), or a mixture of an aromatic diisocyanate and an alicyclic diisocyanate, and a polyol of polytetramethylene ether glycol (PTMEG), polypropylene glycol (PPG), or a polyol blend of PTMEG and PPG and having an unreacted isocyanate (NCO) concentration of from 8.6 to 11 wt. %. The polyurethane in the polishing layer has a Shore D hardness according to ASTM D2240-15 (2015) of from 50 to 90, a shear storage modulus (G?) at 65° C.

Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for polishing three dimensional semiconductor or memory substrates comprising a polishing layer of a polyurethane reaction product of a thermosetting reaction mixture of a curative of 4,4?-methylenebis(3-chloro-2,6-diethylaniline) (MCDEA) or mixtures of MCDEA and 4,4?-methylene-bis-o-(2-chloroaniline) (MbOCA), and a polyisocyanate prepolymer formed from one or two aromatic diisocyanates, such as toluene diisocyanate (TDI), or a mixture of an aromatic diisocyanate and an alicyclic diisocyanate, and a polyol of polytetramethylene ether glycol (PTMEG), polypropylene glycol (PPG), or a polyol blend of PTMEG and PPG and having an unreacted isocyanate (NCO) concentration of from 8.6 to 11 wt. %. The polyurethane in the polishing layer has a Shore D hardness according to ASTM D2240-15 (2015) of from 60 to 90, a shear storage modulus (G?) at 65° C.