Abstract: A method of forming a chemical mechanical polishing pad polishing layer is provided, including: providing a mold having a base with a negative of a groove pattern; providing a poly side (P) liquid component; providing an iso side (I) liquid component; providing a pressurized gas; providing an axial mixing device; introducing the poly side (P) liquid component, the iso side (I) liquid component and the pressurized gas to the axial mixing device to form a combination; discharging the combination from the axial mixing device at a velocity of 5 to 1,000 m/sec toward the base; allowing the combination to solidify into a cake; deriving the chemical mechanical polishing pad polishing layer from the cake; wherein the chemical mechanical polishing pad polishing layer has a polishing surface with the groove pattern formed into the polishing surface; and wherein the polishing surface is adapted for polishing a substrate.

Abstract: The present invention provides methods of manufacturing a chemical mechanical polishing (CMP polishing) layer for polishing substrates, such as semiconductor wafers comprising providing a composition of a plurality of liquid-filled microelements having a polymeric shell; classifying the composition via centrifugal air classification to remove fines and coarse particles and to produce liquid-filled microelements having a density of 800 to 1500 g/liter; and, forming the CMP polishing layer by (i) converting the classified liquid-filled microelements into gas-filled microelements by heating them, then mixing them with a liquid polymer matrix forming material and casting or molding the resulting mixture to form a polymeric pad matrix, or (ii) combining the classified liquid-filled microelements directly with the liquid polymer matrix forming material, and casting or molding.

Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for polishing, for example, a semiconductor substrate, having one or more endpoint detection windows (windows) which at a thickness of 2 mm would have a UV cut-off at a wavelength of 325 nm or lower which are the product of a reaction mixture of (A) from 30 to 56 wt. % of one or more cycloaliphatic diisocyanates or polyisocyanates with (B) from 43 to 69.9999 a polyol mixture of (i) a polymeric diol having an average molecular weight of from 500 to 1,500, such as a polycarbonate diol for hard windows and a polyether polyol for soft windows and (ii) a triol having an average molecular weight of from 120 to 320 in a weight ratio of (B)(i) polymeric diol to (B)(ii) triol ranging from 1.6:1 to 5.2:1, and a catalyst, preferably a secondary or tertiary amine, all weight percent's based on the total solids weight of the reaction mixture.

Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for polishing, for example, a semiconductor substrate, having one or more endpoint detection windows (windows) which at a thickness of 2 mm would have a UV cut-off at a wavelength of 325 nm or lower which are the product of a reaction mixture of (A) from 30 to 56 wt. % of one or more cycloaliphatic diisocyanates or polyisocyanates with (B) from 43 to 69.9999 a polyol mixture of (i) a polymeric diol having an average molecular weight of from 500 to 1,500, such as a polycarbonate diol for hard windows and a polyether polyol for soft windows and (ii) a triol having an average to molecular weight of from 120 to 320 in a weight ratio of (B)(i) polymeric diol to (B)(ii) triol ranging from 1.6:1 to 5.2:1, and a catalyst, preferably a secondary or tertiary amine or bismuth neodecanoate, all weight percent's based on the total solids weight of the reaction mixture.

Abstract: A method of forming a chemical mechanical polishing pad polishing layer is provided, including: providing a mold having a base with a negative of a groove pattern; providing a poly side (P) liquid component; providing an iso side (I) liquid component; providing a pressurized gas; providing an axial mixing device; introducing the poly side (P) liquid component, the iso side (I) liquid component and the pressurized gas to the axial mixing device to form a combination; discharging the combination from the axial mixing device at a velocity of 10 to 300 m/sec toward the base; allowing the combination to solidify into a cake; deriving the chemical mechanical polishing pad polishing layer from the cake; wherein the chemical mechanical polishing pad polishing layer has a polishing surface with the groove pattern formed into the polishing surface; and wherein the polishing surface is adapted for polishing a substrate.

Abstract: The porous polyurethane polishing pad includes a porous matrix having large pores that extend upward from a base surface and open to an upper surface. The large pores are interconnected with small pores. The porous matrix is a blend of two thermoplastic polymers. The first thermoplastic polyurethane has by molecular percent, 45 to 60 adipic acid, 10 to 30 MDI-ethylene glycol and 15 to 35 MDI and an Mn of 40,000 to 60,000 and a Mw of 125,000 to 175,000 and an Mw to Mn ratio of 2.5 to 4 The second thermoplastic polyurethane has by molecular percent, 40 to 50 adipic acid, 20 to 40 adipic acid butane diol, 5 to 20 MDI-ethylene glycol and 5 to 25 MDI and an Mn of 60,000 to 80,000 and a Mw of 125,000 to 175,000 and an Mw to Mn ratio of 1.5 to 3.

Abstract: A method of forming a chemical mechanical polishing pad composite polishing layer is provided, including: providing a first polishing layer component of a first continuous non-fugitive polymeric phase having a plurality of periodic recesses; discharging a combination toward the first polishing layer component at a velocity of 5 to 1,000 m/sec, filling the plurality of periodic recesses with the combination; allowing the combination to solidify in the plurality of periodic recesses forming a second non-fugitive polymeric phase giving a composite structure; and, deriving the chemical mechanical polishing pad composite polishing layer from the composite structure, wherein the chemical mechanical polishing pad composite polishing layer has a polishing surface on the polishing side of the first polishing layer component; and wherein the polishing surface is adapted for polishing a substrate.

Abstract: A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a curative and a polyisocyanate prepolymer having an unreacted isocyanate (NCO) concentration of from 8.3 to 9.8 wt. % and formed from a polyol blend of polypropylene glycol (PPG) and polytetramethylene ether glycol (PTMEG) and containing a hydrophilic portion of polyethylene glycol or ethylene oxide repeat units, a toluene diisocyanate, and one or more isocyanate extenders, wherein the polyurethane reaction product exhibits a wet Shore D hardness of from 10 to 20% less than the Shore D hardness of the dry polyurethane reaction product.

Abstract: A method of forming a chemical mechanical polishing pad composite polishing layer is provided, including: providing a first polishing layer component of a first continuous non-fugitive polymeric phase having a plurality of periodic recesses; discharging a combination toward the first polishing layer component at a velocity of 10 to 300 msec, filling the plurality of periodic recesses with the combination; allowing the combination to solidify in the plurality of periodic recesses forming a second non-fugitive polymeric phase giving a composite structure; and, deriving the chemical mechanical polishing pad composite polishing layer from the composite structure, wherein the chemical mechanical polishing pad composite polishing layer has a polishing surface on the polishing side of the first polishing layer component; and wherein the polishing surface is adapted for polishing a substrate.

Abstract: The invention is to a method of manufacturing a polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The method includes applying droplets of a liquid polymer against a substrate to form a plurality of pores. The liquid polymer contains a nonionic surfactant, the nonionic surfactant has a concentration sufficient to facilitate growth of pores within the liquid polymer and an ionic surfactant has a concentration sufficient to limit growth of the pores within the liquid polymer. Curing the solid polymer forms a polishing pad with final size of the plurality of pores controlled by the concentration of nonionic surfactant and ionic surfactants.

Abstract: The porous polyurethane polishing pad includes a porous polyurethane matrix having large pores extending upward from a base surface and open to a polishing surface. A series of pillow structures is formed from the porous matrix that include the large pores and the small pores. The pillow structures have a downward surface extending from the top polishing surface for forming downwardly sloped side walls at an angle from 30 to 60 degrees from the polishing surface. The large pores open to the downwardly sloped sidewalls and are less vertical than the large pores. The large pores are offset 10 to 60 degrees from the vertical direction in a direction more orthogonal to the sloped sidewalls.

Abstract: A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a curative and a polyisocyanate prepolymer having an unreacted isocyanate (NCO) concentration of from 8.3 to 9.8 wt. % and formed from a polyol blend of polypropylene glycol (PPG) and polytetramethylene ether glycol (PTMEG) and containing a hydrophilic portion of polyethylene glycol or ethylene oxide repeat units, a toluene diisocyanate, and one or more isocyanate extenders, wherein the polyurethane reaction product exhibits a wet Shore D hardness of from 10 to 20% less than the Shore D hardness of the dry polyurethane reaction product.

Abstract: The porous polyurethane polishing pad includes a porous matrix having large pores that extend upward from a base surface and open to an upper surface. The large pores are interconnected with small pores. The porous matrix is a blend of two thermoplastic polymers. The first thermoplastic polyurethane has by molecular percent, 45 to 60 adipic acid, 10 to 30 MDI-ethylene glycol and 15 to 35 MDI and an Mn of 40,000 to 60,000 and a Mw of 125,000 to 175,000 and an Mw to Mn ratio of 2.5 to 4 The second thermoplastic polyurethane has by molecular percent, 40 to 50 adipic acid, 20 to 40 adipic acid butane diol, 5 to 20 MDI-ethylene glycol and 5 to 25 MDI and an Mn of 60,000 to 80,000 and a Mw of 125,000 to 175,000 and an Mw to Mn ratio of 1.5 to 3.

Abstract: The porous polyurethane polishing pad includes a porous polyurethane matrix having large pores extending upward from a base surface and open to a polishing surface. A series of pillow structures is formed from the porous matrix that include the large pores and the small pores. The pillow structures have a downward surface extending from the top polishing surface for forming downwardly sloped side walls at an angle from 30 to 60 degrees from the polishing surface. The large pores open to the downwardly sloped sidewalls and are less vertical than the large pores. The large pores are offset 10 to 60 degrees from the vertical direction in a direction more orthogonal to the sloped sidewalls.

Abstract: The method forms a porous polyurethane polishing pad by coagulating thermoplastic polyurethane to create a porous matrix having large pores extending upward from a base surface and open to an upper surface. The large pores are interconnected with small pores. Heating a press to temperature below or above the softening onset temperature of the thermoplastic polyurethane forms a series of pillows. Plastic deforming side walls of the pillow structures forms downwardly sloped side walls. The downwardly sloped side walls extend from all sides of the pillow structures. The large pores open to the downwardly sloped sidewalls are less vertical than the large pores open to the top polishing surface and are offset 10 to 60 degrees from the vertical direction.

Abstract: A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising (i) one or more diisocyanate, polyisocyanate or polyisocyanate prepolymer, (ii) from 40 to 85 wt. % based on the total weight of (i) and (ii) of one or more blocked diisocyanate, polyisocyanate or polyisocyanate prepolymer which contains a blocking agent and has a deblocking temperature of from 80 to 160° C., and (iii) one or more aromatic diamine curative. The reaction mixture has a gel time at 80° C. and a pressure of 101 kPa of from 2 to 15 minutes; the polyurethane reaction product has a residual blocking agent content of 2 wt. % or less; and the polishing layer exhibits a density of from 0.6 to 1.2 g/cm3.

Abstract: A chemical mechanical polishing pad is provided, comprising: a chemical mechanical polishing layer having a polishing surface; wherein the chemical mechanical polishing layer is formed by combining (a) a poly side (P) liquid component, comprising: an amine-carbon dioxide adduct; and, at least one of a polyol, a polyamine and a alcohol amine; and (b) an iso side (I) liquid component, comprising: polyfunctional isocyanate; wherein the chemical mechanical polishing layer has a porosity of ?10 vol %; wherein the chemical mechanical polishing layer has a Shore D hardness of <40; and, wherein the polishing surface is adapted for polishing a substrate. Methods of making and using the same are also provided.

Abstract: A chemical mechanical polishing pad is provided containing: a polishing layer having a polishing surface; wherein the polishing layer comprises a first continuous non-fugitive polymeric phase and a second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has a plurality of periodic recesses; wherein the plurality of periodic recesses are occupied with the second non-fugitive polymeric phase; wherein the first continuous non-fugitive polymeric phase has an open cell porosity of ?6 vol %; wherein the second non-fugitive polymeric phase contains an open cell porosity of ?10 vol %; and, wherein the polishing surface is adapted for polishing a substrate.

Abstract: A chemical mechanical polishing pad is provided, comprising: a chemical mechanical polishing layer having a polishing surface; wherein the chemical mechanical polishing layer is formed by combining (a) a poly side (P) liquid component, comprising: an amine-carbon dioxide adduct; and, at least one of a polyol, a polyamine and a alcohol amine; and (b) an iso side (I) liquid component, comprising: polyfunctional isocyanate; wherein the chemical mechanical polishing layer has a porosity of ?10 vol %; wherein the chemical mechanical polishing layer has a Shore D hardness of <40; and, wherein the polishing surface is adapted for polishing a substrate. Methods of making and using the same are also provided.

Abstract: The invention provides a method of manufacturing a polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The method obtains a liquid polyurethane material formed from an isocyanate-terminated molecule and a curative agent. The liquid polyurethane material has a Tgel temperature and contains fluid-filled polymeric microspheres. The fluid-filled polymeric microspheres are a blend of preexpanded and unexpanded fluid-filled polymeric microspheres. The preexpanded and unexpanded fluid-filled polymeric microspheres each have a Tstart temperature where diameter of the preexpanded and unexpanded fluid-filled polymeric microspheres increases and a Tmax temperature where gas escapes to decrease diameter of the expanded and unexpanded fluid-filled polymeric microspheres. The cured polyurethane matrix contains preexpanded and expanded fluid-filled polymeric microspheres.