Abstract: Disclosed are methods, systems and devices for operation of memory device. In one aspect, volatile memory bitcells and non-volatile memory bitcells may be integrated to facilitate copying of memory states between the volatile and non-volatile memory bitcells.

Abstract: Various implementations described herein are directed to an integrated circuit. The integrated circuit may include converter circuitry that operates to provide a drive current. The integrated circuit may include process detector circuitry having multiple drive strength devices that are driven by the drive current from the converter circuitry. The multiple drive strength devices may provide multiple drive strength signals based on the drive current. The integrated circuit may include comparator circuitry having a comparator that receives the multiple drive strength signals from the multiple drive strength devices, detects a voltage difference between the multiple drive strength signals, and provides an output signal based on the detected voltage difference.

Abstract: Subject matter disclosed herein may relate to programmable current for correlated electron switches.

Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a non-volatile memory device may be placed in any one of multiple memory states in a write operation by controlling a current and a voltage applied to terminals of the non-volatile memory device. For example, a write operation may apply a programming signal across terminals of non-volatile memory device having a particular current and a particular voltage for placing the non-volatile memory device in a particular memory state.

Abstract: Disclosed are methods, systems and devices for operation of memory device. In one aspect, volatile memory bitcells and non-volatile memory bitcells may be integrated to facilitate copying of memory states between the volatile and non-volatile memory bitcells.

Abstract: Disclosed are methods, systems and devices for operation of memory device. In one aspect, volatile memory bitcells and non-volatile memory bitcells may be integrated to facilitate transfer of stored values between the volatile and non-volatile memory bitcells.

Abstract: Subject matter disclosed herein may relate to programmable current for correlated electron switches.

Abstract: An apparatus for masking power consumption associated with one or more operations of a logic circuitry of a processor. The apparatus comprises power-complementing circuitry configured to provide a second power consumption to directly power-complementing the power consumption associated with the one or more operations of the logic circuitry. The second power consumption complements the power consumption associated with the one or more operations of the logic circuitry. The apparatus further comprises header circuitry configured to enable a common node to vary in voltage corresponding to the one or more operations of the logic circuitry. The power-complementing circuitry and the header circuitry are each coupled to the logic circuitry at the common node.

Abstract: An apparatus for obfuscating power consumption associated with one or more operations of a logic circuitry of a processor. The apparatus comprises counterbalance circuitry configured to provide a second power consumption to directly counterbalance the power consumption associated with the one or more operations of the logic circuitry. The second power consumption varies inversely with the power consumption associated with the one or more operations of the logic circuitry. The apparatus further comprises header circuitry configured to enable a common node to vary in voltage corresponding to the one or more operations of the logic circuitry. The counterbalance circuitry and the header circuitry are each coupled to the logic circuitry at the common node.

Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a non-volatile memory device may be placed in any one of multiple memory states in a write operation by controlling a current and a voltage applied to terminals of the non-volatile memory device. For example, a write operation may apply a programming signal across terminals of non-volatile memory device having a particular current and a particular voltage for placing the non-volatile memory device in a particular memory state.

Abstract: Power is received from a first power signal at a first of a plurality of charge stores. A second power signal is output from a second of the plurality of charge stores. The second power signal is isolated from the first power supply.

Abstract: Power is received from a first power signal a first of a plurality of charge stores. A second power signal is output from a second of the plurality of charge stores. The second power signal is isolated from the first power supply.

Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a non-volatile memory device may be placed in any one of multiple memory states in a write operation by controlling a current and a voltage applied to terminals of the non-volatile memory device. For example, a write operation may apply a programming signal across terminals of non-volatile memory device having a particular current and a particular voltage for placing the non-volatile memory device in a particular memory state.

Abstract: Various implementations described herein may refer to and may be directed to using port modes with memory. In one implementation, a memory device may include access control circuitry used to selectively activate one of a plurality of first word-lines based on first address signals from a first access port, and used to selectively activate one of a plurality of second word-lines based on assigned address signals. The access control circuitry may include address selection circuitry configured to select the assigned address signals based on a port mode signal, where the address selection circuitry selects the first address signals as the assigned address signals when the port mode signal indicates a single port mode, and where the address selection circuitry selects second address signals from a second access port as the assigned address signals when the port mode signal indicates a dual port mode.

Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a non-volatile memory device may be placed in any one of multiple memory states in a write operation by controlling a current and a voltage applied to terminals of the non-volatile memory device. For example, a write operation may apply a programming signal across terminals of non-volatile memory device having a particular current and a particular voltage for placing the non-volatile memory device in a particular memory state.

Abstract: Broadly speaking, embodiments of the present techniques provide an amplification circuit comprising a sense amplifier and at least one Correlated Electron Switch (CES) configured to provide a signal to the sense amplifier. The sense amplifier outputs an amplified version of the input signal depending on the signal provided by the CES element. The signal provided by the CES element depends on the state of the CES material. The CES element provides a stable impedance to the sense amplifier, which may improve the reliability of reading data from the bit line, and reduce the number of errors introduced during the reading.

Abstract: Subject matter disclosed herein may relate to generation of programmable voltage references.

Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a non-volatile memory device may be placed in any one of multiple memory states in a write operation by controlling a current and a voltage applied to terminals of the non-volatile memory device. For example, a write operation may apply a programming signal across terminals of non-volatile memory device having a particular current and a particular voltage for placing the non-volatile memory device in a particular memory state.

Abstract: Subject matter disclosed herein may relate to programmable current for correlated electron switches.

Abstract: Broadly speaking, embodiments of the present techniques provide an amplification circuit comprising a sense amplifier and at least one Correlated Electron Switch (CES) configured to provide a signal to the sense amplifier. The sense amplifier outputs an amplified version of the input signal depending on the signal provided by the CES element. The signal provided by the CES element depends on the state of the CES material. The CES element provides a stable impedance to the sense amplifier, which may improve the reliability of reading data from the bit line, and reduce the number of errors introduced during the reading.