Patents by Inventor George P. Imthurn
George P. Imthurn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11901459Abstract: A method and apparatus are disclosed for use in improving gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit includes a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET.Type: GrantFiled: December 13, 2021Date of Patent: February 13, 2024Assignee: pSemi CorporationInventors: Michael A. Stuber, Christopher N. Brindle, Dylan J. Kelly, Clint L. Kemerling, George P. Imthurn, Robert B. Welstand, Mark L. Burgener, Alexander Dribinsky, Tae-Youn Kim
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Publication number: 20220181497Abstract: A method and apparatus are disclosed for use in improving gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit includes a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET.Type: ApplicationFiled: December 13, 2021Publication date: June 9, 2022Inventors: Michael A. Stuber, Christopher N. Brindle, Dylan J. Kelly, Clint L. Kemerling, George P. Imthurn, Robert B. Welstand, Mark L. Burgener, Alexander Dribinsky, Tae-Youn Kim
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Patent number: 11201245Abstract: A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOD metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET.Type: GrantFiled: January 9, 2020Date of Patent: December 14, 2021Assignee: pSemi CorporationInventors: Michael A. Stuber, Christopher N. Brindle, Dylan J. Kelly, Clint L. Kemerling, George P. Imthurn, Robert B. Welstand, Mark L. Burgener, Alexander Dribinsky, Tae-Youn Kim
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Patent number: 10818796Abstract: A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET.Type: GrantFiled: January 30, 2017Date of Patent: October 27, 2020Assignee: pSemi CorporationInventors: Michael A. Stuber, Christopher N. Brindle, Dylan J. Kelly, Clint L. Kemerling, George P. Imthurn, Robert B. Welstand, Mark L. Burgener, Alexander Dribinsky, Tae Youn Kim
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Publication number: 20200335633Abstract: A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOD metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET.Type: ApplicationFiled: January 9, 2020Publication date: October 22, 2020Inventors: Michael A. Stuber, Christopher N. Brindle, Dylan J. Kelly, Clint L. Kemerling, George P. Imthurn, Robert B. Welstand, Mark L. Burgener, Alexander Dribinsky, Tae-Youn Kim
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Publication number: 20170236946Abstract: A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET.Type: ApplicationFiled: January 30, 2017Publication date: August 17, 2017Inventors: Michael A. Stuber, Christopher N. Brindle, Dylan J. Kelly, Clint L. Kemerling, George P. Imthurn, Robert B. Welstand, Mark L. Burgener, Alexander Dribinsky, Tae Youn Kim
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Patent number: 9608619Abstract: A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET.Type: GrantFiled: July 22, 2013Date of Patent: March 28, 2017Assignee: Peregrine Semiconductor CorporationInventors: Michael A. Stuber, Christopher N. Brindle, Dylan J. Kelly, Clint L. Kemerling, George P. Imthurn, Robert B. Welstand, Mark L. Burgener, Alexander Dribinsky, Tae Youn Kim
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Patent number: 9466536Abstract: Methods for manufacturing semiconductor-on-insulator (SOI) integrated circuits are disclosed. An SOI wafer is provided having a first surface and a second surface. The substrate of the SOI wafer forms the second surface. A transistor is formed in the semiconductor layer of the SOI wafer. A handle wafer is bonded to the first surface of the SOI wafer. The substrate layer is then removed to expose a back surface of the buried insulator of the SOI wafer. Conductive material is deposited on the SOI wafer that covers the back surface of the buried insulator. The conductive material is patterned to form a second gate electrode for the transistor on the back surface of the insulator.Type: GrantFiled: August 4, 2014Date of Patent: October 11, 2016Assignee: Qualcomm IncorporatedInventors: Sinan Goktepeli, Stuart B. Molin, George P. Imthurn
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Patent number: 8954902Abstract: A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET.Type: GrantFiled: February 15, 2011Date of Patent: February 10, 2015Assignee: Peregrine Semiconductor CorporationInventors: Michael A. Stuber, Christopher N. Brindle, Dylan J. Kelly, Clint L. Kemerling, George P. Imthurn, Mark L. Burgener, Alexander Dribinsky, Tae Youn Kim
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Publication number: 20140342529Abstract: Methods for manufacturing semiconductor-on-insulator (SOI) integrated circuits are disclosed. An SOI wafer is provided having a first surface and a second surface. The substrate of the SOI wafer forms the second surface. A transistor is formed in the semiconductor layer of the SOI wafer. A handle wafer is bonded to the first surface of the SOI wafer. The substrate layer is then removed to expose a back surface of the buried insulator of the SOI wafer. Conductive material is deposited on the SOI wafer that covers the back surface of the buried insulator. The conductive material is patterned to form a second gate electrode for the transistor on the back surface of the insulator.Type: ApplicationFiled: August 4, 2014Publication date: November 20, 2014Inventors: Sinan Goktepeli, Stuart B. Molin, George P. Imthurn
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Publication number: 20140167834Abstract: A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET.Type: ApplicationFiled: July 22, 2013Publication date: June 19, 2014Applicant: Peregrine Semiconductor CorporationInventors: Michael A. Stuber, Christopher N. Brindle, Dylan J. Kelly, Clint L. Kemerling, George P. Imthurn, Robert B. Welstand, Mark L. Burgener, Alexander Dribinsky, Tae Youn Kim
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Patent number: 8405147Abstract: A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOT MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.Type: GrantFiled: March 5, 2012Date of Patent: March 26, 2013Assignee: Peregrine Semiconductor CorporationInventors: Christopher N. Brindle, Michael A. Stuber, Dylan J. Kelly, Clint L. Kemerling, George P. Imthurn, Robert B. Welstand, Mark L. Burgener
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Publication number: 20120169398Abstract: A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOT MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.Type: ApplicationFiled: March 5, 2012Publication date: July 5, 2012Inventors: Christopher N. Brindle, Michael A. Stuber, Dylan J. Kelly, Clint L. Kemerling, George P. Imthurn, Robert B. Welstand, Mark L. Burgener
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Patent number: 8129787Abstract: A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.Type: GrantFiled: March 22, 2011Date of Patent: March 6, 2012Assignee: Peregrine Semiconductor CorporationInventors: Christopher N. Brindle, Michael A. Stuber, Dylan J. Kelly, Clint L. Kemerling, George P. Imthurn, Robert B. Welstand, Mark L. Burgener
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Publication number: 20110227637Abstract: A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET.Type: ApplicationFiled: February 15, 2011Publication date: September 22, 2011Inventors: Michael A. Stuber, Christopher N. Brindle, Dylan J. Kelly, Clint L. Kemerling, George P. Imthurn, Mark L. Burgener, Alexander Dribinsky, Tae Youn Kim
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Publication number: 20110169550Abstract: A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.Type: ApplicationFiled: March 22, 2011Publication date: July 14, 2011Inventors: Christopher N. Brindle, Michael A. Stuber, Dylan J. Kelly, Clint L. Kemerling, George P. Imthurn, Robert B. Welstand, Mark L. Burgener
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Patent number: 7910993Abstract: A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.Type: GrantFiled: July 10, 2006Date of Patent: March 22, 2011Assignee: Peregrine Semiconductor CorporationInventors: Christopher N. Brindle, Michael A. Stuber, Dylan J. Kelly, Clint L. Kemerling, George P. Imthurn, Robert B. Welstand, Mark L. Burgener
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Patent number: 7890891Abstract: A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET.Type: GrantFiled: September 14, 2006Date of Patent: February 15, 2011Assignee: Peregrine Semiconductor CorporationInventors: Michael A. Stuber, Christopher N. Brindle, Dylan J. Kelly, Clint L. Kemerling, George P. Imthurn, Robert B. Welstand, Mark L. Burgener, Alexander Dribinsky, Tae Youn Kim
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Patent number: RE48944Abstract: A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.Type: GrantFiled: January 9, 2020Date of Patent: February 22, 2022Assignee: pSemi CorporationInventors: Christopher N. Brindle, Michael A. Stuber, Dylan J. Kelly, Clint L. Kemerling, George P. Imthurn, Robert B. Welstand, Mark L. Burgener
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Patent number: RE48965Abstract: A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET.Type: GrantFiled: December 11, 2019Date of Patent: March 8, 2022Assignee: pSemi CorporationInventors: Michael A. Stuber, Christopher N. Brindle, Dylan J. Kelly, Clint L. Kemerling, George P. Imthurn, Robert B. Welstand, Mark L. Burgener, Alexander Dribinsky, Tae Youn Kim