Method and apparatus for use in improving linearity of MOSFETS using an accumulated charge sink
A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.
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This application is a reissue of U.S. application Ser. No. 15/707,970, filed Sep. 18, 2017, now U.S. Pat. No. 10,153,763, which is a continuation application of co-pending and commonly assigned U.S. application Ser. No. 14/845,154, “Method and Apparatus for use in Improving Linearity of MOSFETs using an Accumulated Charge Sink”, filed Sep. 3, 2015, now U.S. Pat. No. 9,780,775; which is a continuation application of and commonly assigned U.S. application Ser. No. 13/850,251, “Method and Apparatus for use in Improving Linearity of MOSFETs using an Accumulated Charge Sink”, filed Mar. 25, 2013, issuing on Sep. 8, 2015 as now U.S. Pat. No. 9,130,564, which application Ser. No. 13/850,251 is a continuation application of commonly assigned U.S. application Ser. No. 13/412,529, “Method and Apparatus for use in Improving Linearity of MOSFETs Using an Accumulated Charge Sink”, filed Mar. 5, 2012, issuing on Mar. 26, 2013 as now U.S. Pat. No. 8,405,147, which application Ser. No. 13/412,529 is a Continuation of commonly assigned U.S. application Ser. No. 13/053,211, “Method and Apparatus for use in Improving Linearity of MOSFETs Using an Accumulated Charge Sink”, filed Mar. 22, 2011, issuing Mar. 6, 2012 as now U.S. Pat. No. 8,129,787, which application Ser. No. 13/053,211 is a divisional application of commonly assigned U.S. application Ser. No. 11/484,370, “Method and Apparatus for use in Improving Linearity of MOSFETs Using an Accumulated Charge Sink”, filed Jul. 10, 2006, issuing Mar. 22, 2011 as now U.S. Pat. No. 7,910,993; and application Ser. No. 11/484,370 (U.S. Pat. No. 7,910,993) claims the benefit of priority under 35 U.S.C. § 119 (e) to commonly-assigned U.S. Provisional Application No. 60/698,523, filed Jul. 11, 2005, entitled “Method and Apparatus for use in Improving Linearity of MOSFETs using an Accumulated Charge Sink”; and this application U.S. application Ser. No. 15/707,970 is also a continuation of commonly assigned pending U.S. application Ser. No. 15/419,898 filed Jan. 30, 2017, which is a continuation application of commonly assigned U.S. application Ser. No. 13/948,094 filed Jul. 22, 2013 (U.S. Pat. No. 9,608,619 issued Mar. 28, 2017), which is a continuation application of commonly assigned U.S. application Ser. No. 13/028,144 filed Feb. 15, 2011 (U.S. Pat. No. 8,954,902 issued Feb. 10, 2015), which is a divisional of commonly assigned U.S. application Ser. No. 11/520,912 filed Sep. 14, 2006 (U.S. Pat. No. 7,890,891 issued Feb. 15, 2011), which is a continuation-in-part of U.S. application Ser. No. 11/484,370, filed Jul. 10, 2006 (U.S. Pat. No. 7,910,993 issued Mar. 22, 2011), and which application Ser. No. 11/520,912 application claims priority to U.S. provisional applications 60/718,260 filed Sep. 15, 2005 and 60/698,523 filed Jul. 11, 2005; and this Continuation application U.S. application Ser. No. 15/707,970 is also related to U.S. application Ser. No. 11/881,816 filed Jul. 26, 2007 which is a CIP of application Ser. No. 11/520,912 and a CIP of application Ser. No. 11/484,370; and the contents of all of the above cited provisional applications, pending applications, and issued patents, including their associated appendices, are hereby incorporated by reference herein in their entirety.
BACKGROUND 1. FieldThe present invention relates to metal-oxide-semiconductor (MOS) field effect transistors (FETs), and particularly to MOSFETs fabricated on Semiconductor-On-Insulator (“SOI”) and Semiconductor-On-Sapphire (“SOS”) substrates. In one embodiment, an SOI (or SOS) MOSFET is adapted to control accumulated charge and thereby improve linearity of circuit elements.
2. Description of Related ArtAlthough the disclosed method and apparatus for use in improving the linearity of MOSFETs are described herein as applicable for use in SOI MOSFETs, it will be appreciated by those skilled in the electronic device design arts that the present teachings are equally applicable for use in SOS MOSFETs. In general, the present teachings can be used in the implementation of MOSFETs using any convenient semiconductor-on-insulator technology, including silicon-on-insulator technology. For example, the inventive MOSFETs described herein can be implemented using compound semiconductors on insulating substrates. Such compound semiconductors include, but are not limited to, the following: Silicon Germanium (SiGe), Gallium Arsenide (GaAs), Indium Phosphide (InP), Gallium Nitride (GaN), Silicon Carbide (SiC), and II-VI compound semiconductors, including Zinc Selenide (ZnSe) and Zinc Sulfide (ZnS). The present teachings also may be used in implementing MOSFETs fabricated from thin-film polymers. Organic thin-film transistors (OTFTs) utilize a polymer, conjugated polymers, oligomers, or other molecules to form the insulting gate dielectric layer. The present inventive methods and apparatus may be used in implementing such OTFTs.
It will be appreciated by those skilled in the electronic design arts that the present disclosed method and apparatus apply to virtually any insulating gate technology, and to integrated circuits having a floating body. As those skilled in the art will appreciate, technologies are constantly being developed for achieving “floating body” implementations. For example, the inventors are aware of circuits implemented in bulk silicon wherein circuit implementations are used to “float” the body of the device. In addition, the disclosed method and apparatus can also be implemented using silicon-on-bonded wafer implementations. One such silicon-on-bonded wafer technique uses “direct silicon bonded” (DSB) substrates. Direct silicon bond (DSB) substrates are fabricated by bonding and electrically attaching a film of single-crystal silicon of differing crystal orientation onto a base substrate. The present disclosure therefore contemplates embodiments of the disclosed method and apparatus implemented in any of the developing floating body implementations. Therefore, references to and exemplary descriptions of SOI MOSFETs herein are not to be construed as limiting the applicability of the present teachings to SOI MOSFETs only. Rather, as described below in more detail, the disclosed method and apparatus find utility in MOSFETs implemented in a plurality of device technologies, including SOS and silicon-on-bonded wafer technologies.
As is well known, a MOSFET employs a gate-modulated conductive channel of n-type or p-type conductivity, and is accordingly referred to as an “NMOSFET” or “PMOSFET”, respectively.
A source terminal 102 is operatively coupled to the source 112 so that a source bias voltage “Vs” may be applied to the source 112. A drain terminal 106 is operatively coupled to the drain 116 so that a drain bias voltage “Vd” may be applied to the drain 116. A gate terminal 104 is operatively coupled to the gate 108 so that a gate bias voltage “Vg” may be applied to the gate 108.
As is well known, when a voltage is applied between the gate and source terminals of a MOSFET, a generated electric field penetrates through the gate oxide to the transistor body. For an enhancement mode device, a positive gate bias creates a channel in the channel region of the MOSFET body through which current passes between the source and drain. For a depletion mode device, a channel is present for a zero gate bias. Varying the voltage applied to the gate modulates the conductivity of the channel and thereby controls the current flow between the source and drain.
For an enhancement mode MOSFET, for example, the gate bias creates a so-called “inversion channel” in a channel region of the body 114 under the gate oxide 110. The inversion channel comprises carriers having the same polarity (e.g., “P” polarity (i.e., hole carriers), or “N” polarity (i.e., electron carriers) carriers) as the polarity of the source and drain carriers, and it thereby provides a conduit (i.e., channel) through which current passes between the source and the drain. For example, as shown in the SOI NMOSFET 100 of
Depletion mode MOSFETs operate similarly to enhancement mode MOSFETs, however, depletion mode MOSFETs are doped so that a conducting channel exists even without a voltage being applied to the gate. When a voltage of appropriate polarity is applied to the gate the channel is depleted. This, in turn, reduces the current flow through the depletion mode device. In essence, the depletion mode device is analogous to a “normally closed” switch, while the enhancement mode device is analogous to a “normally open” switch. Both enhancement and depletion mode MOSFETs have a gate voltage threshold, Vth, at which the MOSFET changes from an off-state (non-conducting) to an on-state (conducting).
No matter what mode of operation an SOI MOSFET employs (i.e., whether enhancement or depletion mode), when the MOSFET is operated in an off-state (i.e., the gate voltage does not exceed Vth), and when a sufficient nonzero gate bias voltage is applied with respect to the source and drain, an “accumulated charge” may occur under the gate. The “accumulated charge”, as defined in more detail below and used throughout the present application, is similar to the “accumulation charge” described in the prior art literature in reference to MOS capacitors. However, the prior art references describe “accumulation charge” as referring only to bias-induced charge existing under a MOS capacitor oxide, wherein the accumulation charge is of the same polarity as the majority carriers of the semiconductor material under the capacitor oxide. In contrast, and as described below in more detail, “accumulated charge” is used herein to refer to gate-bias induced carriers that may accumulate in the body of an off-state MOSFET, even if the majority carriers in the body do not have the same polarity as the accumulated charge. This situation may occur, for example, in an off-state depletion mode NMOSFET, wherein the accumulated charge may comprise holes (i.e., having P polarity) even though the body doping is N− rather than P−.
For example, as shown in
As is well known, electron-hole pair carriers may be generated in MOSFET bodies as a result of several mechanisms (e.g., thermal, optical, and band-to-band tunneling electron-hole pair generation processes). When electron-hole pair carriers are generated within an NMOSFET body, for example, and when the NMOSFET is biased in an off-state condition, electrons may be separated from their hole counterparts and pulled into both the source and drain. Over a period of time, assuming the NMOSFET continues to be biased in the off-state, the holes (resulting from the separated electron-hole pairs) may accumulate under the gate oxide (i.e., forming an “accumulated charge”) underneath and proximate the gate oxide. A similar process (with the behavior of electrons and holes reversed) occurs in similarly biased PMOSFET devices. This phenomenon is now described with reference to the SOI NMOSFET 100 of
When the SOI NMOSFET 100 is operated with gate, source and drain bias voltages that deplete the channel carriers in the body 114 (i.e., the NMOSFET 100 is in the off-state), holes may accumulate underneath and proximate the gate oxide 110. For example, if the source bias voltage Vs and the drain bias voltage Vd are both zero (e.g., connected to a ground contact, not shown), and the gate bias voltage Vg comprises a sufficiently negative voltage with respect to ground and with respect to Vth, holes present in the body 114 become attracted to the channel region proximate the gate oxide 110. Over a period of time, unless removed or otherwise controlled, the holes accumulate underneath the gate oxide 110 and result in the accumulated charge 120 shown in
Accumulated Charge Regime Defined
The accumulated charge is opposite in polarity to the polarity of carriers in the channel. Because, as described above, the polarity of carriers in the channel is identical to the polarity of carriers in the source and drain, the polarity of the accumulated charge 120 is also opposite to the polarity of carriers in the source and drain. For example, under the operating conditions described above, holes (having “P” polarity) accumulate in off-state NMOSFETs, and electrons (having “N” polarity) accumulate in off-state PMOSFETs. Therefore, a MOSFET device is defined herein as operating within the “accumulated charge regime” when the MOSFET is biased to operate in an off-state, and when carriers having opposite polarity to the channel carriers are present in the channel region. Stated in other terms, a MOSFET is defined as operating within the accumulated charge regime when the MOSFET is biased to operate in an off-state, and when carriers are present in the channel region having a polarity that is opposite the polarity of the source and drain carriers.
For example, and referring again to
In another example, wherein the SOI NMOSFET 100 comprises a depletion mode device, Vth is negative by definition. According to this example, the body 114 comprises an N− region (as contrasted with the P− region shown in
In other examples, Vs and Vd may comprise nonzero bias voltages. In some embodiments, Vg must be sufficiently negative to both Vs and Vd (in order for Vg to be sufficiently negative to Vth, for example) in order to bias the NMOSFET in the off-state. Those skilled in the MOSFET device design arts shall recognize that a wide variety of bias voltages may be used to practice the present teachings. As described below in more detail, the present disclosed method and apparatus contemplates use in any SOI MOSFET device biased to operate in the accumulated charge regime.
SOI and SOS MOSFETs are often used in applications in which operation within the accumulated charge regime adversely affects MOSFET performance. As described below in more detail, unless the accumulated charge is removed or otherwise controlled, it detrimentally affects performance of SOI MOSFETs under certain operating conditions. One exemplary application, described below in more detail with reference to the circuits shown in
Therefore, it is desirable to provide techniques for adapting and improving SOI (and SOS) MOSFETs, and circuits implemented with the improved SOI MOSFETs, in order to remove or otherwise control the accumulated charge, and thereby significantly improve SOI MOSFET performance. It is desirable to provide methods and apparatus for use in improving the linearity characteristics in SOI MOSFETs. The improved MOSFETs should have improved linearity, harmonic distortion, intermodulation distortion, and BVDSS characteristics as compared with prior art MOSFETs, and thereby improve the performance of circuits implemented with the improved MOSFETs. The present teachings provide such novel methods and apparatus.
SUMMARYApparatuses and methods are provided to control accumulated charge in SOI MOSFETs, thereby improving non-linear responses and harmonic and intermodulaton distortion effects in the operation of the SOI MOSFETs.
In one embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink (ACS), operatively coupled to the body of the SOI MOSFET, receives accumulated charge generated in the body, thereby reducing the nonlinearity of the net source-drain capacitance of the SOI MOSFET.
In one embodiment, the ACS comprises a high impedance connection to the MOSFET body, with an exemplary impedance greater than 106 ohm.
Like reference numbers and designations in the various drawings indicate like elements.
DETAILED DESCRIPTIONAs noted above, those skilled in the electronic device design arts shall appreciate that the teachings herein apply equally to NMOSFETs and PMOSFETs. For simplicity, the embodiments and examples presented herein for illustrative purposes include only NMOSFETs, unless otherwise noted. By making well known changes to dopants, charge carriers, polarity of bias voltages, etc., persons skilled in the arts of electronic devices will easily understand how these embodiments and examples may be adapted for use with PMOSFETs.
Non-Linearity and Harmonic Distortion Effects of Accumulated Charge in an SOI NMOSFET
As described above in the background, no matter what mode of operation the MOSFET employs (i.e., enhancement mode or depletion mode), under some circumstances, when a MOSFET is operated in an off-state with a nonzero gate bias voltage applied with respect to the source and drain, an accumulated charge may occur under the gate. According to the present teachings, as described above when the MOSFET is in an off-state, and when carriers are present in the channel region having a polarity that is opposite the polarity of the source and drain carriers, the MOSFET is defined herein as operating in the accumulated charge regime.
According to the present teachings, the inventors have observed that, when used in certain circuit implementations, MOSFETs operating in the accumulated charge regime exhibit undesirable non-linear characteristics that adversely impact circuit performance. For example, as described below in more detail with reference to
As shown in
A capacitor 206 represents the capacitance between the gate 108 and the body 114. A capacitor 202 represents the capacitance between the source 112 and the gate 108, and another capacitor 204 represents the capacitance between the drain 116 and the gate 108. A substrate capacitance due to the electrical coupling between the source 112 and the drain 116 (through the insulating substrate 118 shown in
As described above, when the NMOSFET 100 is in the off-state, and when the accumulated charge 120 (
However, when the NMOSFET 100 operates within the accumulated charge regime, and the accumulated charge 120 is therefore present in the body 114, mobile holes comprising the accumulated charge produce p-type conductivity between the source-body junction 218 and the drain-body junction 220. In effect, the accumulated charge 120 produces an impedance between the source-body junction 218 and the drain-body junction 220 that is significantly less than the impedance between the junctions in the absence of the accumulated charge. If a Vds voltage is applied between the drain 116 and the source 112, the mobile holes redistribute according to the electrical potentials that result within the body 114. DC and low-frequency current flow through the SOI NMOSFET 100 is prevented by the diode properties of the source-body junction 218 and the drain-body junction 220, as represented by the junction diodes 208 and 210, respectively. That is, because the junction diodes 208 and 210 are anti-series (i.e., “back-to-back”) in this case, no DC or low-frequency currents flow through the SOI NMOSFET 100. However, high-frequency currents may flow through the SOI NMOSFET 100 via the capacitances of the source-body junction 218 and the drain-body junction 220, as represented by the junction capacitors 214 and 216, respectively.
The junction capacitors 214 and 216 are voltage dependent because they are associated with junctions between n-type and p-type regions. This voltage dependence results from the voltage dependence of the width of the depletion region of the junction between the n-type and p-type regions. As a bias voltage is applied to the NMOSFET, the width of the depletion region of the junction between the n-type and p-type regions is varied. Because the capacitance of the junction depends on the width of the junction depletion region, the capacitance also varies as a function of the bias applied across the junction (i.e., the capacitance is also voltage dependent).
Further, the capacitors 202 and 204 may also have a voltage dependence caused by the presence of the accumulated charge 120. Although the complex reasons for this voltage dependence are not described in detail herein, persons skilled in the arts of electronic devices shall understand that electric field regions (e.g., electric field regions 122 and 124 described above with reference to
The voltage dependencies of the junction capacitors 214 and 216, the gate-to-source and gate-to-drain capacitors 202, 204, respectively, and the direct capacitance (not shown), cause nonlinear behavior in off-state capacitance Coff of the MOSFET when AC voltages are applied to the NMOSFET 100, thereby producing undesirable generation of harmonic distortions and intermodulation distortion (IMD). The relative contributions of these effects are complex, and depend on fabrication processes, biases, signal amplitudes, and other variables. However, those skilled in the electronic device design arts shall understand from the teachings herein that reducing, removing, or otherwise controlling the accumulated charge provides an overall improvement in the nonlinear behavior of Coff. In addition, because the body impedance 212 is significantly decreased in the presence of the accumulated charge 120, the magnitude of Coff may be increased when the FET operates in the accumulated charge regime. Reducing, removing, or otherwise controlling the accumulated charge also mitigates this effect.
In addition, the accumulated charge does not accumulate in the body in an instant as soon as the FET transitions from an on-state (conducting state) to an off-state (non-conducting state). Rather, when the FET transitions from the on-state to the off-state, it begins to accumulate charge in the body of the MOSFET, and the amount of accumulated charge increases over time. The accumulation of the accumulated charge therefore has an associated time constant (i.e., it does not instantly reach a steady-state level of accumulated charge). The accumulated charge accumulates slowly in the FET body. The depleted FET has a Coff associated with it which is increased with an increasing amount of accumulated charge. In terms of FET performance, as the Coff increases with an increasing amount of accumulated charge in the FET body, drift occurs in the FET insertion loss (i.e., the FET becomes more “lossy”), isolation (the FET becomes less isolating) and insertion phase (delay in the FET is increased). Reducing, removing, or otherwise controlling the accumulated charge also mitigates these undesirable drift effects.
The inventors have observed that the nonlinear behavior of the MOSFET off-state capacitance Coff adversely affects the performance of certain circuits implemented with the prior art SOI MOSFETs. For example, when an RF switch is implemented using the prior art SOI MOSFETs, such as the prior art SOI NMOSFET 100 of
For example, the well known GSM cellular communication system standard imposes stringent linearity, harmonic and intermodulation suppression, and power consumption requirements on front-end components used to implement GSM cell phones. One exemplary GSM standard requires that all harmonics of a fundamental signal be suppressed to below −30 dBm at frequencies up to 12.75 GHz. If harmonics are not suppressed below these levels, reliable cell phone operation can be significantly adversely impacted (e.g., increased dropped calls or other communication problems may result due to harmonic and intermodulation distortion of the transmit and receive signals). Because the RF switching function is generally implemented in the cell phone front-end components, improvements in the RF switch linearity, harmonic and intermodulation suppression, and power consumption performance characteristics is highly desirable. A description of how the non-linear behavior of the off-state capacitance Coff of the prior art MOSFETs adversely affects these RF switch characteristics is now described with reference to
Harmonic Distortion Effects on RF Switch Circuits Implemented Using Prior Art SOI MOSFETs
The MOSFET 254 acts as a pass or switching transistor and is configured, when enabled, to selectively couple an RF input signal (applied to its drain, for example) to an RF antenna 258 via a transmission path 256. The shunting MOSFETs, 260a-260e, when enabled, act to alternatively shunt the RF input signal to ground. As is well known, the switching MOSFET 254 is selectively controlled by a first switch control signal (not shown) coupled to its gate, and the shunting MOSFETs, 260a-260e are similarly controlled by a second switch control signal (not shown) coupled to their gates. The switching MOSFET 254 is thereby enabled when the shunting MOSFETs 260a-260e are disabled, and vice versa. As shown in the exemplary embodiment of the RF switch 250 of
When the switch 250 is configured in this state, the RF signal 252 propagates through the switching MOSFET 254, through the transmission path 256, and to the antenna 258. As described above with reference to
More specifically, when the accumulated charge is present in the channel regions of the off-state SOI MOSFETs 260a-260e it responds to variations in the RF signals applied to their respective drains. As the time varying RF signal propagates along the transmission path 256, the RF signal applies time varying source-to-drain bias voltages to the SOI MOSFETs 260a-260e. The time varying source-to-drain bias voltages creates movement of the accumulated charge within the channel regions of the SOI MOSFETs 260-260e. The movement of the accumulated charge within the channel regions of the SOI MOSFETs causes variations in the drain-to-source off-state capacitance of the SOI MOSFETs 260a-260e. More specifically, the movement of the accumulated charge within the channel regions causes a voltage dependence of the drain-to-source off-state capacitance as described above with reference to
As noted above, harmonic distortion and IMD of the RF signal is a major disadvantage of the prior art RF switch circuits implemented using the prior art SOI MOSFET devices. For many applications, harmonics and IMD of the RF signal must be suppressed to levels that heretofore have been difficult or impossible to achieve using prior art SOI MOSFET devices. In GSM devices, for example, at a maximum operating power of +35 dBm, prior art switches typically have only a 6 dB margin to the GSM third order harmonics suppression requirement of less than −30 dBm. Very low even order harmonic distortion is also desirable in GSM systems as the second order harmonic of the GSM transmit band also resides in the DCS receive band. Suppression of odd order (e.g., third order) harmonics of the RF signal, however, is desirable and improvements in that regard are needed.
In addition, as is well known, presence of an accumulated charge in the bodies of floating body (e.g., SOI) MOSFETs can also adversely affect the drain-to-source breakdown voltage (BVDSS) performance characteristics of the floating body MOSFETs. As is well known, floating-body FETs demonstrate drain-to-source breakdown voltage problems, also known as BVDSS, wherein the drain-to-source “punch-through” voltage is reduced by a parasitic bipolar action. The parasitic bipolar action is caused when holes are generated in the channel and the holes have nowhere to dissipate (i.e., because the body is floating, the holes have no means for escaping the body). As a consequence, the potential of the MOSFET body is increased, which effectively reduces the threshold voltage. In turn, this condition causes the MOSFET device to experience increased leakage, thereby generating more holes in the body, and thereby exacerbating the BVDSS problem (as a result of this positive feedback condition).
The present disclosed method and apparatus for improving linearity of SOI (and SOS) MOSFET devices overcomes the above-described disadvantages of the prior art. Once the accumulated charge is recognized as a major source of harmonic distortion, IMD and compression/saturation in off-state SOI MOSFET devices, and in circuits (such as RF circuits) implemented with these devices, it becomes clear that reduction, removal, and/or control of the accumulated charge improves the harmonic suppression characteristics of these devices. In addition, reduction, removal, and/or control of the accumulated charge also improve the BVDSS performance characteristics by preventing the parasitic bipolar action from occurring. Improvements in BVDSS lead to consequent improvements in device linearity. Several exemplary structures and techniques for controlling the accumulated charge in SOI MOSFETs are described in detail in the next section.
Method and Apparatus for Improving the Linearity of MOSFETs Using Accumulated Charge Sinks (ACS)—Overview
As described below in more detail, the present disclosure describes methods and apparatuses for improving semiconductor device linearity (e.g., reducing adverse harmonic distortion and IMD effects) in SOI MOSFETs. In one exemplary embodiment, the method and apparatus improves the linearity and controls the harmonic distortion and IMD effects of the MOSFET devices by reducing the accumulated charge in the bodies of the MOSFET devices. In one embodiment, the present method and apparatus reduces or otherwise controls the accumulated charge in the MOSFET bodies using an accumulated charge sink (ACS) that is operatively coupled to the MOSFET body. In one embodiment, the present method and apparatus entirely removes all of the accumulated charge from the bodies of the MOSFET devices. In one described embodiment, the MOSFET is biased to operate in an accumulated charge regime, and the ACS is used to entirely remove, reduce, or otherwise control, the accumulated charge and thereby reduce harmonic distortions and IMD that would otherwise result. Linearity is also improved in some embodiments by removing or otherwise controlling the accumulated charge thereby improving the floating body MOSFET BVDSS characteristics.
As noted in the background section above, persons skilled in the electronic device design and manufacture arts shall appreciate that the teachings herein apply equally to MOSFETs fabricated on Semiconductor-On-Insulator (“SOI”) and Semiconductor-On-Sapphire (“SOS”) substrates. The present teachings can be used in the implementation of MOSFETs using any convenient semiconductor-on-insulator technology. For example, the inventive MOSFETs described herein can be implemented using compound semiconductors fabricated on insulating substrates, such as GaAs MOSFETs. As noted above, the present method and apparatus may also be applied to silicon-germanium (SiGe) SOI MOSFETs. For simplicity, the embodiments and examples presented herein for illustrative purposes include only NMOSFETs, unless otherwise noted. By making well known changes to dopants, charge carriers, polarity of bias voltages, etc., persons skilled in the electronic device design arts will easily understand how these embodiments and examples may be adapted for use with PMOSFETs.
As noted above, the present disclosure is particularly applicable to FETs and associated applications benefiting from a fully depleted channel when the FET is operated in the off-state, wherein an accumulated charge may result. The disclosed method and apparatus for use in improving the linearity of MOSFETs also finds applicability for use with partially depleted channels. As known to those skilled in the art, the doping and dimensions of the body vary widely. In an exemplary embodiment, the body comprises silicon having a thickness of approximately 100 angstroms to approximately 2,000 angstroms. In a further exemplary embodiment, dopant concentration within the FET bodies ranges from no more than that associated with intrinsic silicon to approximately 1×1018 active dopant atoms per cm3, resulting in fully-depleted transistor operation. In a further exemplary embodiment, dopant concentration within the FET bodies ranges from 1×1018 to 1×1019 active dopant atoms per cm3 and/or the silicon comprising the body ranges from a thickness of 2000 angstroms to many micrometers, resulting in partially-depleted transistor operation. As will be appreciated by those skilled in the electronic design and manufacturing arts, the present disclosed method and apparatus for use in improving linearity of MOSFETs can be used in MOSFETs implemented in a wide variety of dopant concentrations and body dimensions. The present disclosed method and apparatus therefore is not limited for use in MOSFETs implemented using the exemplary dopant concentrations and body dimensions as set forth above.
According to one aspect of the present disclosure, accumulated charge within a FET body is reduced using control methodologies and associated circuitry. In one embodiment all of the accumulated charge is removed from the FET body. In other embodiments, the accumulated charge is reduced or otherwise controlled. In one embodiment, holes are removed from the FET body, whereas in another embodiment, electrons are removed from the FET body, as described below in more detail. By removing holes (or electrons) from the FET body using the novel and nonobvious teachings of the present disclosure, voltage induced variations in the parasitic capacitances of the off-state FETs are reduced or eliminated, thereby reducing or eliminating nonlinear behavior of the off-state FETs. In addition, as described above with reference to
Accumulated charge control not only facilitates a beneficial overall reduction in the FET off-state capacitance Coff (as described above with reference to
Reductions in harmonics and intermodulation distortion are generally beneficial in any semiconductor system, either bulk semiconductor or semiconductor-on-insulator (SOI) systems. SOI systems include any semiconductor architecture employing semiconductor-containing regions positioned above an underlying insulating substrate. While any suitable insulating substrate can be used in a SOI system, exemplary insulating substrates include silicon dioxide (e.g., a buried oxide layer supported by a silicon substrate, such as that known as Separation by Implantation of Oxygen (SIMOX)), bonded wafer (thick oxide), glass, and sapphire. As noted above, in addition to the commonly used silicon-based systems, some embodiments of the present disclosure may be implemented using silicon-germanium (SiGe), wherein the SiGe is used equivalently in place of Si.
A wide variety of ACS implementations and structures can be used to practice the present disclosed method and apparatus. In accordance with one embodiment of the present method and apparatus, an ACS is used to remove or otherwise control accumulated charge (referenced as 120 in
The ACC MOSFET is shown schematically embodied as a four-terminal device in
The operation of various exemplary RF switch circuits implemented using the ACC MOSFETs of the present disclosure is described below with reference to the circuit schematics of
Controlling Accumulated Charge Using an Accumulated Charge Sink (ACS)
Those skilled in the arts of electronic devices shall understand that the electrical contact region 310 may be used to facilitate electrical coupling to the ACS 308 because in some embodiments it may be difficult to make a direct contact to a lightly doped region. In addition, in some embodiments the ACS 308 and the electrical contact region 310 may be coextensive. In another embodiment, the electrical contact region 310 comprises an N+ region. In this embodiment, the electrical contact region 310 functions as a diode connection to the ACS 308, which prevents positive current flow into the ACS 308 (and also prevents positive current flow into the body 312) under particular bias conditions, as described below in more detail.
As is well known to those skilled in the electronic device design arts, in other embodiments, the ACC NMOSFET 300 of
Prior Art Body Contacts Distinguished from the Disclosed ACS
According to the present disclosure, the ACS 308 used to implement ACC SOI MOSFETs includes novel features in structure, function, operation and design that distinguish it from the so-called “body contacts” (also sometimes referred to as “body ties”, usually when the “body contact” is directly connected to the source) that are well known in the prior art.
Exemplary references relating to body contacts used in prior art SOI MOSFETs include the following: (1) F. Hameau and O. Rozeau, Radio-Frequency Circuits Integration Using CMOS SOI 0.25 μm Technology,” 2002 RF IC Design Workshop Europe, 19-22 Mar. 2002, Grenoble, France; (2) J. R. Cricci et al., “Silicon on Sapphire MOS Transistor,” U.S. Pat. No. 4,053,916, Oct. 11, 1977; (3) O. Rozeau et al., “SOI Technologies Overview for Low-Power Low-Voltage Radio-Frequency Applications,” Analog Integrated Circuits and Signal Processing, 25, pp. 93-114, Boston, Mass., Kluwer Academic Publishers, November 2000; (4) C. Tinella et al., “A High-Performance CMOS-SOI Antenna Switch for the 2.5-5-GHz Band, “IEEE Journal of Solid-State Circuits, Vol. 38, No. 7, July, 2003; (5) H. Lee et al., “Analysis of body bias effect with PD-SOI for analog and RF applications,” Solid State Electron., Vol. 46, pp. 1169-1176, 2002; (6) J.-H. Lee, et al., “Effect of Body Structure on Analog Performance of SOI NMOSFETs,” Proceedings, 1998 IEEE International SOI Conference, 5-8 Oct. 1998, pp. 61-62; (7) C. F. Edwards, et al., The Effect of Body Contact Series Resistance on SOI CMOS Amplifier Stages,” IEEE Transactions on Electron Devices, Vol. 44, No. 12, December 1997 pp. 2290-2294; (8) S. Maeda, et al., Substrate-bias Effect and Source-drain Breakdown Characteristics in Body-tied Short-channel SOI MOSFET' s,” IEEE Transactions on Electron Devices, Vol. 46, No. 1, January 1999 pp. 151-158; (9) F. Assaderaghi, et al., “Dynamic Threshold-voltage MOSFET (DTMOS) for Ultra-low Voltage VLSI,” IEEE Transactions on Electron Devices, Vol. 44, No. 3, March 1997, pp. 414-422; (10) G. O. Workman and J. G. Fossum, “A Comparative Analysis of the Dynamic Behavior of BTG/SOI MOSFETs and Circuits with Distributed Body Resistance,” IEEE Transactions on Electron Devices, Vol. 45, No. 10, October 1998 pp. 2138-2145; and (11) T.-S. Chao, et al., “High-voltage and High-temperature Applications of DTMOS with Reverse Schottky Barrier on Substrate Contacts,” IEEE Electron Device Letters, Vol. 25, No. 2, February 2004, pp. 86-88.
As described herein, applications such as RF switch circuits, may use SOI MOSFETs operated with off-state bias voltages, for which accumulated charge may result. The SOI MOSFETs are defined herein as operating within the accumulated charge regime when the MOSFETs are biased in the off-state, and when carriers having opposite polarity to the channel carriers are present in the channel regions of the MOSFETs. In some embodiments, the SOI MOSFETs may operate within the accumulated charge regime when the MOSFETs are partially depleted yet still biased to operate in the off-state. Significant benefits in improving nonlinear effects on source-drain capacitance can be realized by removing or otherwise controlling the accumulated charge according to the present teachings. In contrast to the disclosed techniques, none of the cited prior art teach or suggest ACS methods and apparatuses that are uniquely useful for removing or controlling accumulated charge. Nor are they informed regarding problems caused by the accumulated charge such as nonlinear effects on the off-state source-drain capacitance Coff. Consequently, the prior art body contacts described in the references cited above differ greatly (in structure, function, operation and design) from the ACSs described with reference to
In one example, the ACS 308 operates effectively to remove or otherwise control the accumulated charge from the SOI NMOSFET 300 using a high impedance connection to and throughout the body 312. High impedance ACSs may be used because the accumulated charge 120 is primarily generated by phenomena (e.g., thermal generation) that take a relatively long period of time to produce significant accumulated charge. For example, a typical time period for producing non-negligible accumulated charge when the NMOSFET operates in the accumulated charge regime is approximately a few milliseconds or greater. Such relatively slow generation of accumulated charge corresponds to very low currents, typically less than 100 nA/mm of transistor width. Such low currents can be effectively conveyed even using very high impedance connections to the body. According to one example, the ACS 308 is implemented with a connection having a resistance of greater than 106 ohms. Consequently, the ACS 308 is capable of effectively removing or otherwise controlling the accumulated charge 120 even when implemented with a relatively high impedance connection, relative to the low impedance prior art body contacts.
In stark contrast, the prior art teachings of body contacts described in the references cited above require low impedance (high efficiency) access to the body regions of SOI MOSFETs for proper operation (see, e.g., references (3), (6), and (7) above). A principal reason for this requirement is that the prior art body contacts are primarily directed to reducing the adverse effects on SOI MOSFET functions caused by much faster and more effective electron-hole pair generation processes than occur when the FET is operated in the accumulated charge regime. For example, in some prior art MOSFETs not operated in the accumulated charge regime, electron-hole pair carriers are generated as a result of impact ionization. Impact ionization produces electron-hole pairs at a much faster rate than occurs when the FET is operated in the accumulated charge regime.
The relative rates for electron-hole pair generation by impact ionization versus the pair generation processes causing accumulated charge can be estimated from the roll-off frequencies for the two phenomena. For example, reference (3) cited above indicates roll-off frequencies for impact ionization effects in the range of 105 Hz. In contrast, a roll-off frequency for the accumulated charge effects has been observed to be in the range of 103 Hz or less, as indicated by recovery times for odd harmonics. These observations indicate that the ACS 308 can effectively control accumulated charge using an impedance that is at least 100 times larger than required of prior art body contacts used in controlling impact ionization charge, for example. Further, because impact ionization primarily occurs when the SOI MOSFET operates in an on-state, the effects of impact ionization can be amplified by on-state transistor operation. Low impedance body contacts to and throughout a body region is even more critical in these environments in order to control the effects of impact ionization under the on-state conditions.
In stark contrast, the ACS 308 of the present teachings removes or otherwise controls the accumulated charge only when the ACC SOI MOSFET operates in the accumulated charge regime. By definition, the FET is in the off-state in this regime, so there is no requirement to remove impact ionization as amplified by an on-state FET. Therefore, a high impedance ACS 308 is perfectly adequate for removing the accumulated charge under these operating conditions. The prior art requirements for low impedance body connections results in numerous problems of implementation that are overcome by the present teachings, as described below in more detail.
In addition, the ACS 308 may be implemented with much lower source-to-drain parasitic capacitance as compared to the body contacts of the prior art. The above-described low impedance connection to the SOI MOSFET body required of the prior art body contacts necessitates proximity of the contacts to the entire body. This may require a plurality body contact “fingers” that contact the body at different locations along the body. The low impedance connection to the body also necessitates proximity of the prior art body contacts to the source and drain. Because of parasitic capacitances produced by such body contacts, the cited prior art references teach away from the use of such structures for many high frequency applications such as RF. In stark contrast, the ACS 308 of the present disclosure may be positioned a selected distance away from the source 304 and the drain 306, and the ACS 308 may also be coupled to the body 312 at a first distal end of the body 312 (shown in
Further, because impact ionization hole currents are much larger (in the range of 5,000 nA per mm body width) than for accumulated charge generation (less than approximately 100 nA per mm body width), the prior art does not teach how to effectively implement very large body widths (i.e., much greater than approximately 10 μm). In contrast, the ACS 308 of the present disclosed device may be implemented in SOI MOSFETs having relatively large body widths. This provides improvements in on-state conductance and transconductance, insertion loss and fabrication costs, particularly for RF switch devices. According to the prior art teachings cited above, larger body widths adversely affect the efficient operation of body contacts because their impedances are necessarily thereby increased. Although the cited prior art suggests that a plurality of fingers may be used to contact the body at different locations, the plurality of fingers adversely affects parasitic source-to-drain capacitances, as described above.
For these reasons, and for the reasons described below in more detail, the present disclosure provides novel MOSFET devices, circuits and methods that overcome the limitations according to the prior art teachings as cited above.
As described above with reference to
In most embodiments, as described above with reference to
In accordance with the disclosed method and apparatus, when the ACC NMOSFET 300′ is biased to operate in the accumulated charge regime (i.e., when the ACC NMOSFET 300′ is in the off-state, and there is an accumulated charge 120 of P polarity (i.e., holes) present in the channel region of the body 312), the accumulated charge is removed or otherwise controlled via the ACS terminal 308′. When accumulated charge 120 is present in the body 312, the charge 312 can be removed or otherwise controlled by applying a bias voltage (Vb (for “body”) or VACS (ACS bias voltage)) to the ACS terminal 308′. In general, the ACS bias voltage VACS applied to the ACS terminal 308′ may be selected to be equal to or more negative than the lesser of the source bias voltage Vs and drain bias voltage Vd. More specifically, in some embodiments, the ACS terminal 308′ can be coupled to various accumulated charge sinking mechanisms that remove (or “sink”) the accumulated charge when the FET operates in the accumulated charge regime. Several exemplary accumulated charge sinking mechanisms and circuit configurations are described below with reference to
Similar to the prior art NMOSFET 100 described above with reference to
However, those skilled in the electronics design arts shall appreciate that a myriad of bias voltages can be applied to the four device terminals while still employing the techniques of the present disclosed method and apparatus. As long as the ACC SOI NMOSFET 300′ is biased to operate in the accumulated charge regime, the accumulated charge can be removed or otherwise controlled by applying a bias voltage VACS to the ACS terminal 308′, and thereby remove the accumulated charge from the body 312.
For example, in one embodiment wherein the ACC NMOSFET 300′ comprises a depletion mode device, Vth is negative by definition. In this embodiment if both the Vs and Vd bias voltages comprise zero volts (i.e., both terminals tied to circuit ground node), and a gate bias Vg applied to the gate terminal 302′ is sufficiently negative to Vth (for example, Vg is more negative than approximately −1 V relative to Vth), holes may accumulate under the gate oxide 110 thereby becoming the accumulated charge 120. In this example, in order to remove the accumulated holes (i.e., the accumulated charge 120) from the FET body 312, the voltage VACS applied to the ACS 308 may be selected to be equal to or more negative than the lesser of Vs and Vd.
In other examples, the source and drain bias voltages, Vs and Vd, respectively, may comprise voltage other than zero volts. According to these embodiments, the gate bias voltage Vg must be sufficiently negative to both Vs and Vd (in order for Vg to be sufficiently negative to Vth, for example) in order to bias the NMOSFET in the off-state. As described above, if the NMOSFET is biased in the off-state for a sufficiently long time period (approximately 1-2 ms, for example) an accumulated charge will accumulate under the gate oxide. In these embodiments, as noted above, in order to remove the accumulated charge 120 from the body 312, the ACS bias voltage VACS applied to the ACS terminal 308′ may be selected to be equal to or more negative than the lesser of Vs and Vd.
It should be noted that, in contrast to the examples described above, the prior art body contacts are implemented largely for purposes of mitigating the adverse effects caused by impact ionization. Consequently, the prior art body contacts are typically tied to the source of the MOSFET. In order to effectively control, reduce, or entirely remove the accumulated charge in an NMOSFET, VACS should, in the exemplary embodiments, be equal to or more negative than the lesser of Vs and Vd. Those skilled in the electronic device design arts shall appreciate that different Vs, Vd, Vg and VACS bias voltages may be used when the ACC MOSFET comprises a PMOSFET device. Because the prior art body contacts are typically tied to the source, this implementation cannot be effected using the prior art body contact approach.
View line A-A′ slices through the following component regions of the ACC NMOSFET 300′″: the P+ electrical contact region 310, the ACS 308 (shown in
Although the present teachings encompass such embodiments described above, those skilled in the electronic device design and manufacturing arts shall recognize that such low-resistance connections are not required. Therefore, disadvantages associated with the embodiment shown in
Referring again to
The increased threshold voltage can be reduced by reducing the size of the region 307. Eliminating the region 307 altogether eliminates the threshold voltage increase. Because the threshold voltage increase can increase harmonic and intermodulation distortion of the “on” state MOSFET, eliminating this effect improves MOSFET performance. The increased threshold voltage also has the detrimental effect of increasing the MOSFET on-resistance (i.e., the resistance presented by the MOSFET when it is in the on-state (conducting state), which detrimentally impacts the MOSFET insertion loss.
In one exemplary embodiment, as shown, for example in the embodiments of the ACC NMOSFET 300 described above with reference to
This configuration of the P+ region 310 eliminates or greatly reduces the problems associated with threshold voltage increase as described above. As described above with reference to
In another exemplary embodiment, as described below with reference to
Moreover, as described above with reference to
It shall be understood by those skilled in the electronic device design arts that although the illustrated embodiment shows the ACSs 308 and 308″ extending approximately the entire width of the ACC NMOSFET 300′″″, the ACSs 308 and 308″ may also comprise much narrower (or wider) regions, and still function perfectly well to remove or otherwise control the accumulated charge. Also, in some embodiments, it is not necessary that the impedance of the ACS 308 matches the impedance of the ACS 308″. It will further be understood by the skilled person that the ACSs 308 and 308″ may comprise different sizes and configurations (i.e., rectangular, square, or any other convenient shape), and may also be positioned at various distances away from the body 312 (i.e., not necessarily the same distance away from the body 312). As described above with reference to
Four-Terminal ACC MOSFET Devices—Simple Circuit Configurations
The SOI NMOSFET 300 of
The ACC SOI NMOSFET 300 of
Advantageously, the accumulated charge can be removed via the ACS terminal 408 by connecting the ACS terminal 408 to the gate terminal 402 as shown. This configuration ensures that when the FET 300 is in the off-state, it is held in the correct bias region to effectively remove or otherwise control the accumulated charge. As shown in
In other exemplary embodiments, as described above with reference to
In another exemplary embodiment, as described above, the ACC NMOSFET 300 comprises a depletion mode device. In this embodiment, the threshold voltage, Vth is, by definition, less than zero. For Vs and Vd both at zero volts, when a gate bias Vg sufficiently negative to Vth is applied to the gate terminal 402 (for example, Vg more negative than approximately −1 V relative to Vth), holes may accumulate under the gate oxide and thereby comprise an accumulated charge. For this example, the voltage VACS may also be selected to be equal to Vg by connecting the ACS terminal 408 to the gate terminal 402, thereby conveying the accumulated charge from the ACC NMOSFET as described above.
In some embodiments of the improved ACC SOI NMOSFET 300, such as that described above with reference to
Another exemplary simplified circuit using the improved ACC SOI NMOSFET 300 is shown in
As with the device shown in
When the SOI NMOSFET 300 is biased in an on condition, the diode 410 is reverse-biased, thereby preventing the flow of positive current into the source and drain regions. The reverse-biased configuration reduces power consumption and improves linearity of the device. The circuit shown in
With the exception of the diode 410 used to prevent the flow of positive current into the ACS terminal 408, exemplary operation of the simplified circuit shown in
In yet another embodiment, the ACS terminal 408 may be coupled to a control circuit 412 as illustrated in the simplified circuit of
It may be desirable to provide a negative ACS bias voltage VACS to the ACS terminal 408 when the SOI NMOSFET 300 is biased into an accumulated charge regime. In this exemplary embodiment, the control circuit 412 may prevent positive current flow into the ACS terminal 408 by selectively maintaining an ACS bias voltage VACS that is consistently negative with respect to both the source and drain bias voltages. In particular, the control circuit 412 may be used to apply an ACS bias voltage that is equal to or more negative than the lesser of Vs and Vd. By application of such an ACS bias voltage, the accumulated charge is thereby removed or otherwise controlled.
In the exemplary embodiment of the simplified circuit shown in
In other embodiments, Vs and Vd may comprise bias voltages that are other than zero. According to these examples, Vg must be sufficiently negative to both Vs and Vd in order for Vg to be sufficiently negative to Vth, in order to bias the NMOSFET 300 in the off-state. This allows the accumulation of accumulated charge under the gate oxide. For this example, the ACS bias voltage VACS may be selected to be equal to or more negative than the lesser of Vs and Vd by connecting the ACS terminal 408 to the control circuit 412 to provide selected ACS bias voltages, thereby conveying the accumulated charge from the ACC NMOSFET 300.
In other embodiments, if the ACC NMOSFET 300 of
As described above, in one embodiment, instead of having the control circuit 412 provide a bias to the ACS terminal 408 as shown in
In another embodiment, the circuit shown in
In one exemplary circuit, as shown in
In some embodiments, such as for example in an RF switch circuit, the gate terminal 402 and the ACS terminal 408 follow Vds at half the rate (Vds/2) of Vds. At high Vds excursions, Vgs may approach the threshold voltage Vth, resulting in increased Ids leakage current. In some cases, such a leakage current exits the ACS terminal 408 and can overwhelm associated circuitry (e.g., a negative voltage generator). Hence, the circuit shown in
In yet another exemplary embodiment, the simplified circuit shown in
As shown in the simplified circuit of
In some circuit embodiments, body nodes of a multi-finger FET implementation may be connected to one another (using, for example, metal or silicon), overlapping the source fingers. On another side of the FET implementation, gate nodes may be are connected to one another (using, for example, metal or silicon) overlapping the drain fingers. As a result of this FET implementation, additional capacitance may result between the source and body (S-B), and further additional capacitance may result between the drain and gate (D-G). These additional capacitances may degrade the symmetry of the intrinsic device. Under AC excitation, this results in the gate terminal following the drain terminal more closely, and the body terminal following the source terminal more closely, which effectively creates an AC signal across the diode 410, which can excite nonlinearities of the diode 410 as described above. Using the exemplary embodiment shown in
Improved Coff Performance Characteristics of ACC MOSFETs Made in Accordance with the Present Disclosed Method and Apparatus
As described above with reference to
Referring again to
Referring again to
The terms “switching” and “shunting”, as pertains to the transistors shown in
It will also be appreciated by those skilled in RF switch circuits that all of the exemplary switch circuits may be used “bi-directionally,” wherein the previously described input ports function as output ports, and vice versa. That is, although an exemplary RF switch may be described herein as having one or more input ports (or nodes) and one or more output ports (or nodes), this description is for convenience only, and it will be understood that output ports may, in some applications, be used to input signals, and input ports may, in some applications, be used to output signals. The RF switch circuits described with reference to
Referring again to
Exemplary bias voltages for the switching and shunting SOI NMOSFETs 506 and 508, respectively, may include the following: with Vth approximately zero volts, Vg, for the on-state, of +2.5 V, and Vg, for the off-state, of −2.5 V. For these bias voltages, the SOI NMOSFETs may eventually operate in an accumulated charge regime when placed into their off-states. In particular, and as described above with reference to
Exemplary bias voltages for the switching NMOSFET 526 and the shunting ACC NMOSFET 528 may include: with Vth approximately zero, Vg, for the on-state, of +2.5 V, and Vg, for the off-state, of −2.5 V. For these bias voltages, the SOI NMOSFETs may operate in an accumulated charge regime when placed into the off-state. However, when the switching NMOSFET 526 is in the on-state and the shunting ACC NMOSFET 528 is in the off-state, the output signal RFout at the output terminal 505 will not be distorted by nonlinear behavior of the off-state capacitance Coff of the improved shunting ACC NMOSFET 528 due to the accumulated charge. When the shunting ACC NMOSFET 528 operates in the accumulated charge regime, the accumulated charge is removed via the ACS terminal 508′. More specifically, because the gate terminal 502′ of the shunting ACC NMOSFET 528 is connected to the ACS terminal 508′, the accumulated charge is removed or otherwise controlled as described above in reference to the simplified circuit of
Exemplary bias voltages for the NMOSFET 526 and the ACC NMOSFET 528 may include the following: with Vth approximately zero volts, Vg, for the on-state, of +2.5 V, and Vg, for the off-state, of −2.5 V. For these bias voltages, the SOI NMOSFETs 526, 528 may operate in an accumulated charge regime when placed into an off-state. However, when the NMOSFET 526 is in the on-state and the ACC NMOSFET 528 is in the off-state, the output signal RFout will not be distorted by nonlinear behavior of the off-state capacitance Coff of the ACC NMOSFET 528 due to the accumulated charge. Because the gate terminal 502′ of the ACC NMOSFET 528 is connected to the ACS terminal 508′ via a diode 509, the accumulated charge is entirely removed, reduced or otherwise controlled, as described above with reference to
Exemplary bias voltages for the NMOSFET 526 and the ACC NMOSFET 528 may include the following: with Vth approximately zero volts, Vg, for the on-state, of +2.5 V, and Vg, for the off-state, of −2.5 V. For these bias voltages, the SOI NMOSFETs 526, 528 may operate in an accumulated charge regime when placed into the off-state. However, when the NMOSFET 526 is in the on-state and the ACC NMOSFET 528 is in the off-state, the output signal RFout produced at the output terminal 505 will not be distorted by the nonlinear behavior of the off-state capacitance Coff of the ACC NMOSFET 528 due to the accumulated charge. When the NMOSFET 528 operates in the accumulated charge regime, the accumulated charge is removed via the ACS terminal 508′. More specifically, because the ACS terminal 508′ of the ACC NMOSFET 528 is electrically coupled to the control circuit 520 via the control line 517 (i.e., controlled by the control signal “C2” as shown), the accumulated charge can be eliminated, reduced or otherwise controlled by applying selected bias voltages to the ACS terminal 508′ as described above with reference to
In the circuits described above with respect to
For example, as set forth above, although the exemplary RF switches have been described as being implemented using ACC SOI NMOSFET devices, they can also be implemented using ACC SOI PMOSFET devices. Further, although single-pole single-throw, and single-pole double-throw RF switches have been described above as examples of RF switches implemented in accordance with the present teachings, the present application encompasses any variation of single-pole multi-throw, multi-pole single-throw, and multi-pole multi-throw RF switch configurations. Those skilled in the RF switch design and fabrication arts shall recognize and appreciate that the present teachings can be used in implementing any convenient RF switch configuration design.
Exemplary RF Switch Implementation Using Stacked Transistors
In the exemplary embodiments of RF switch circuits described above, the switch circuits are implemented using a single SOI NMOSFET (e.g., the single SOI NMOSFET 506 of
One example of how stacked NMOSFETs may be implemented in accordance with the teachings of the present disclosure is illustrated in
Three stacked ACC SOI NMOSFETs are shown in each ACC NMOSFET stack in the exemplary stacked RF switch circuit 600 of
Other stacked RF switch circuits, adapted for accumulated charge control, analogous to the circuits described above with reference to
Exemplary Method of Operation
At the STEP 704, the ACC SOI MOSFET is controlled, at least part of the time, so that it operates in an accumulated charge regime. In most embodiments, as described above, the ACC MOSFET is operated in the accumulated charge regime by applying bias voltages that place the FET in an off-state condition. In one exemplary embodiment, the ACC SOI MOSFET comprises an ACC SOI NMOSFET that is configured as part of a shunting circuit of an RF switch. According to this exemplary embodiment, the SOI NMOSFET may be operated in an accumulated charge regime after the shunting circuit is placed into an off-state by applying a negative bias voltage to the gate terminal of the ACC NMOSFET.
The method then proceeds to a STEP 706, whereat the accumulated charge that has accumulated in the channel region of the ACC MOSFET is removed or otherwise controlled via the ACS terminal. In this embodiment, the accumulated charge is conveyed to another circuit terminal and is thereby reduced or otherwise controlled. One such exemplary circuit terminal that can be used to convey the accumulated charge from the MOSFET body comprises a gate terminal of the ACC MOSFET (see, e.g., the description above with reference to
Exemplary RF Switch Implementations Using Stacked Transistors Having Source to Drain Resistors
As shall be appreciated by skilled persons from the present teachings, removal of the accumulated charge via the ACS terminal causes current to flow from the body of the ACC SOI MOSFET. For example, when a hole current flows from the body of an ACC SOI MOSFET via the ACS, an equal electron current flows to the FET source and/or drain. For some circuits (e.g., the RF switch circuit of
Exemplary operating voltages for the NMOSFETs 602-606 of
Even currents smaller than the exemplary currents may produce adverse affects on the operation of the RF switching circuit 800 by reducing Vgs and/or Vgd of the ACC SOI MOSFETs 620-624 in the off-state, thereby reducing the power handling capability and reliability of the circuit by increasing leakage (e.g., when either Vgs or Vgd approaches Vth), by increasing hot-carrier damage caused by excess leakage, etc. Linearity of the MOSFETs is also degraded by reducing Vgs and/or Vgd when either value approaches Vth.
Exemplary values for the Rds resistors 802 to 806 may be selected in some embodiments by selecting a value approximately equal to the resistance of the gate resistors 632-636 divided by the number of ACC SOI NMOSFETs in the stack (in the exemplary embodiment, there are three ACC FETs in the stack). More generally, the value of the Rds resistors may be equal to the gate resistor value divided by the number of ACC SOI NMOSFETs in the stack. In one example, a stack of eight ACC SOI NMOSFETs may have gate resistors of 80 kohm and Rds resistors of 10 kohm.
In some embodiments, the Rds resistors may be selected so that they do not adversely affect switch performance characteristics, such as, for example, the insertion loss of the switch 800 due to the off-state ACC SOI NMOSFETs. For example, for a net shunt resistance greater than 10 kohm, the insertion loss is increased by less than 0.02 dB.
In other embodiments, the Rds resistors may be implemented in circuits comprising a single ACC SOI MOSFET (as contrasted with the stacked shunting configuration exemplified in
A first control signal C1 is provided to control the operating states of the ACC SOI NMOSFETs 526 and 528′ (i.e., C1 selectively operates the FETs in the on-state or the off-state). Similarly, a second control signal C1x is provided to control the operating states of the ACC SOI NMOSFETs 528 and 526′. As is well known, and as described for example in the above incorporated commonly assigned U.S. Pat. No. 6,804,502, the control signals C1 and C1x are generated so that the ACC SOI NMOSFETs 526 and 528′ are in an on-state when the ACC SOI NMOSFETs 528 and 526′ are in an off-state, and vice versa. This configuration allows the RF switch circuit 900 to selectively convey either the signal RF1 or RF2 to the RF common output node 903.
A first ACS control signal C2 is configured to control the operation of the ACS terminals of the SOI NMOSFETs 526 and 528′. A second ACS control signal C2x is configured to control the ACS terminals of the ACC SOI NMOSFETs 528 and 526′. The first and second ACS control signals, C2 and C2x, respectively, are selected so that the ACSs of the associated and respective NMOSFETs are appropriately biased in order to eliminate, reduce, or otherwise control their accumulated charge when the ACC SOI NMOSFETs operate in an accumulated charge regime.
As shown in the RF switch circuit 900 of
Additional Exemplary Benefits Afforded by the ACC MOSFETs of the Present Disclosure
As described above, presence of the accumulated charge in the bodies of the SOI MOSFETs can adversely affect the drain-to-source breakdown voltage (BVDSS) performance characteristics of the floating body MOSFETs. This also has the undesirable effect of worsening the linearity of off-state MOSFETs when used in certain circuits such as RF switching circuits. For example, consider the shunting SOI NMOSFET 528 shown in
When sufficiently large signals are input that cause the NMOSFET 528 to enter a BVDSS regime, some of the RF current is clipped, or redirected through the NMOSFET 528 to ground, resulting in a loss of signal power. This current “clipping” causes compression behavior that can be shown, for instance, in a RF switch “Pout vs. Pin” plot. This is frequently characterized by P1 dB, wherein the insertion loss is increased by 1.0 dB over the small-signal insertion loss. This is an obvious indication of nonlinearity of the switch. In accordance with the present disclosed method and apparatus, removing, reducing or otherwise controlling the accumulated charge increases the BVDSS point. Increases to the BVDSS point of the NMOSFET 528 commensurately increases the large-signal power handling of the switch. As an example, for a switch, doubling the BVDSS voltage of the ACC NMOSFET increases the P1 dB point by 6 dB. This is a significant accomplishment as compared with the prior art RF switch designs.
In addition, as described above in more detail, presence of the accumulated charge in SOI MOSFET body adversely impacts the magnitude of Coff and also takes time to form when the FET is switched from an on-state to an off-state. In terms of switch performance, the nonlinearity of Coff adversely impacts the overall switch linearity performance (as described above), and the magnitude of Coff adversely affects the small-signal performance parameters such as insertion loss, insertion phase (or delay), and isolation. By reducing the magnitude of Coff using the present disclosed method and apparatus, the switch (implemented with ACC MOSFETs) has reduced insertion loss due to lowered parasitic capacitance, reduced insertion phase (or delay), again due to lowered parasitic capacitance, and increased isolation due to less capacitive feedthrough.
The ACC MOSFET also improves the drift characteristic of SOI MOSFETs as pertains to the drift of the small-signal parameters over a period of time. As the SOI MOSFET takes some time to accumulate the accumulated charge when the switch is off, the Coff capacitance is initially fairly small. However, over a period of time while operated in the accumulated charge regime, the off-state capacitance Coff increases toward a final value. The time it takes for the NMOSFET to reach a full accumulated charge state depends on the electron-hole pair (EHP) generation mechanism. Typically, this time period is on the order of approximately hundreds of milliseconds for thermal EHP generation at room temperature, for example. During this charge-up time period, the insertion loss and insertion phase increase. Also, during this time period, the isolation decreases. As is well known, these are undesirable phenomena in standard SOI MOSFET devices. These problems are alleviated or otherwise mitigated using the ACC NMOSFETs and related circuits described above.
In addition to the above-described benefits afforded by the disclosed ACC MOSFET method and apparatus, the disclosed techniques also allow the implementation of SOI MOSFETs having improved temperature performance, improved sensitivity to Vdd variations, and improved sensitivity to process variations. Other improvements to the prior art SOI MOSFETs afforded by the present disclosed method and apparatus will be understood and appreciated by those skilled in the electronic device design and manufacturing arts.
Exemplary Fabrication Methods
In one embodiment of the present disclosure, the exemplary RF switches described above may be implemented using a fully insulating substrate semiconductor-on-insulator (SOI) technology. Also, as noted above, in addition to the commonly used silicon-based systems, some embodiments of the present disclosure may be implemented using silicon-germanium (SiGe), wherein the SiGe is used equivalently in place of silicon.
In some exemplary embodiments, the MOSFET transistors of the present disclosure may be implemented using “Ultra-Thin-Silicon (UTSi)” (also referred to herein as “ultrathin silicon-on-sapphire”) technology. In accordance with UTSi manufacturing methods, the transistors used to implement the inventive methods disclosed herein are formed in an extremely thin layer of silicon in an insulating sapphire wafer. The fully insulating sapphire substrate enhances the performance characteristics of the inventive RF circuits by reducing the deleterious substrate coupling effects associated with non-insulating and partially insulating substrates. For example, insertion loss improvements may be realized by lowering the transistor on-state resistances and by reducing parasitic substrate conductance and capacitance. In addition, switch isolation is improved using the fully insulating substrates provided by UTSi technology. Owing to the fully insulating nature of silicon-on-sapphire technology, the parasitic capacitance between the nodes of the RF switches is greatly reduced as compared with bulk CMOS and other traditional integrated circuit manufacturing technologies.
Examples of and methods for making silicon-on-sapphire devices that can be implemented in the MOSFETs and circuits described herein, are described in U.S. Pat. No. 5,416,043 (“Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer”); U.S. Pat. No. 5,492,857 (“High-frequency wireless communication system on a single ultra-thin silicon on sapphire chip”); U.S. Pat. No. 5,572,040 (“High-frequency wireless communication system on a single ultrathin silicon on sapphire chip”); U.S. Pat. No. 5,596,205 (“High-frequency wireless communication system on a single ultrathin silicon on sapphire chip”); U.S. Pat. No. 5,600,169 (“Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer”); U.S. Pat. No. 5,663,570 (“High-frequency wireless communication system on a single ultrathin silicon on sapphire chip”); U.S. Pat. No. 5,861,336 (“High-frequency wireless communication system on a single ultrathin silicon on sapphire chip”); U.S. Pat. No. 5,863,823 (“Self-aligned edge control in silicon on insulator”); U.S. Pat. No. 5,883,396 (“High-frequency wireless communication system on a single ultrathin silicon on sapphire chip”); U.S. Pat. No. 5,895,957 (“Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer”); U.S. Pat. No. 5,920,233 (“Phase locked loop including a sampling circuit for reducing spurious side bands”); U.S. Pat. No. 5,930,638 (“Method of making a low parasitic resistor on ultrathin silicon on insulator”); U.S. Pat. No. 5,973,363 (“CMOS circuitry with shortened P-channel length on ultrathin silicon on insulator”); U.S. Pat. No. 5,973,382 (“Capacitor on ultrathin semiconductor on insulator”); and U.S. Pat. No. 6,057,555 (“High-frequency wireless communication system on a single ultrathin silicon on sapphire chip”). All of these referenced patents are incorporated herein in their entirety for their teachings on ultra-thin silicon-on-sapphire integrated circuit design and fabrication.
Similarly to other bulk and SOI CMOS processes, an SOS enhancement mode NMOSFET, suitable for some embodiments of the present disclosure, may, in some embodiments, be fabricated with a p-type implant into the channel region with n-type source and drain regions, and may have a threshold voltage of approximately +500 mV. The threshold voltage is directly related to the p-type doping level, with higher doping resulting in higher thresholds. Similarly, the SOS enhancement mode PMOSFET may, in some exemplary embodiments, be implemented with an n-type channel region and p-type source and drain regions. Again, the doping level defines the threshold voltage with higher doping resulting in a more negative threshold.
In some exemplary embodiments, an SOS depletion-mode NMOSFET, suitable for some embodiments of the present disclosure, may be fabricated by applying the p-type channel-implant mask to the n-type transistor, resulting in a structure that has n-type channel, source, and drain regions and a negative threshold voltage of approximately −500 mV. Similarly, in some exemplary embodiments, a suitable depletion-mode PMOSFET may be implemented by applying the n-type channel-implant mask to the p-type transistor, resulting in a structure that has p-type channel, source, and drain regions and a positive threshold voltage of approximately +500 mV.
As noted in the background section above, the present ACC MOSFET apparatus can also be implemented using any convenient semiconductor-on-insulator technology, included, but not limited to, silicon-on-insulator, silicon-on-sapphire, and silicon-on-bonded wafer technology. One such silicon-on-bonded wafer technique uses “direct silicon bonded” (DSB) substrates. Direct silicon bond (DSB) substrates are fabricated by bonding and electrically attaching a film of single-crystal silicon of differing crystal orientation onto a base substrate. Such implementations are available from the Silicon Genesis Corporation headquartered in San Jose, Calif. As described at the Silicon Genesis Corporation website (publicly available at “www.sigen.com”), silicon-on-bonded wafer techniques include the so-called Nano-Cleave™ bonding process which can be performed at room temperature. Using this process, SOI wafers can be formed with materials having substantially different thermal expansion coefficients, such as in the manufacture of Germanium-on-Insulator wafers (GeOI). Exemplary patents describing silicon-on-bonded wafer implementations are as follows: U.S. Pat. No. 7,056,808, issued Jun. 6, 2006 to Henley, et al.; U.S. Pat. No. 6,969,668, issued Nov. 29, 2005 to Kang, et al.; U.S. Pat. No. 6,908,832, issued Jun. 21, 2005 to Farrens et al.; U.S. Pat. No. 6,632,724, issued Oct. 14, 2003 to Henley, et al. and U.S. Pat. No. 6,790,747, issued Sep. 14, 2004 to Henley, et al. All of the above-cited patents are incorporated by reference herein for their teachings on techniques and methods of fabricating silicon devices on bonded wafers.
A reference relating to the fabrication of enhancement-mode and depletion-mode transistors in SOS is “CMOS/SOS/LSI Switching Regulator Control Device,” Orndorff, R. and Butcher, D., Solid-State Circuits Conference, Digest of Technical Papers, 1978 IEEE International, Volume XXI, pp. 234-235, February 1978. The “Orndorff” reference is hereby incorporated in its entirety herein for its techniques on the fabrication of enhancement-mode and depletion-mode SOS transistors.
EXEMPLARY RESULTS—APPENDIX AExemplary results that can be obtained using the disclosed method and apparatus for use in improving the linearity of MOSFETs are described in the attached Appendix A, entitled “Exemplary Performance Results of an SP6T Switch Implemented with ACC MOSFETs”. The contents of Appendix A are hereby incorporated by reference herein in its entirety. The results shown in detail in Appendix A are now briefly described. As noted in the attached Appendix A, the measured results are provided for a single pole, six throw (SP6T) RF switch. Those skilled in the art of RF switch circuit design shall understand that the results can be extended to any practical RF switch configuration, and therefore are not limited to the exemplary SP6T switch for which results are shown.
Slides 2-7 of Appendix A show harmonic performance versus Input Power for prior art devices and for ACC MOSFET devices made in accordance with the present disclosed method and apparatus. Switch circuits implemented with the ACC MOSFET of the disclosed method and apparatus have a third harmonic response that rises at a 3:1 slope (cube of the input) versus input power on the log scale. Those skilled in the electronic device design arts shall appreciate that no input-power dependent dynamic biasing occurs with the improved RF switch designs made in accordance with the present disclosure. In contrast, prior art floating body FET harmonics disadvantageously do not follow a 3:1 slope. This is disadvantageous for small-signal third-order distortions such as IM3.
As shown in the attached Appendix A, at a GSM maximum input power of +35 dBm, the 3fo is improved by 14 dB. This is shown in detail in slide number 3 of the attached Appendix A. Improvements in third order harmonic distortion is also applicable to all odd order responses, such as, for example, 5th order responses, 7th order responses, etc.
Similar to 3fo, the second order response of the improved ACC MOSFET-implemented RF switch follows a 2:1 slope (square of the input) whereas the prior art RF switch does not. This results in improved 2fo and IM2 performance at low input power, and roughly the same performance at +35 dBm.
Slide numbers 6 and 7 of the attached Appendix A treat the performance under non 50-ohm loads. In this case, the load represents a 5:1 mismatch wherein the load impedance can be of any convenient value that results in a reflection coefficient magnitude of ⅔. In the case of SOI MOSFETs, reflection coefficients that result in higher voltages cause the most severe problems. At 5:1 VSWR, the voltage can be 1.667× higher. Those skilled in the art may view this similarly by sweeping the input power up to higher voltages which equate to the mismatch conditions.
The slides provided in Appendix A illustrate that the improved RF switch, implemented with ACC MOSFETs made in accordance with the present disclosed method and apparatus, has improved large voltage handling capabilities as compared to the prior art RF switch implementations. As shown in the slides, the harmonics are approximately 20 dB at the worst mismatch phase angle. Transient harmonics are also shown. Those skilled in the art shall observe that the standard SP6T switch 3fo overshoots by several dB before reaching a final value. The improved SP6T switch made in accordance with the present disclosed method and apparatus does not exhibit such a time-dependency.
Slide number 8 of the Appendix A shows insertion loss performance results achieved using the improved SP6T RF switch of the present teachings. It can be observed that the improved SP6T switch has slightly improved insertion loss (IL) performance characteristics. Slide number 9 of Appendix A shows that isolation is also slightly improved using the present improved SP6T RF switch.
Slide number 10 of the Appendix A shows IM3 performance which is a metric of the slightly nonlinear behavior of the RF switch. The IM3 performance is shown versus phase again due to a load mismatch in the system under test. As can be observed by reviewing Slide number 10 of the Appendix A, the performance of the improved SP6T RF switch is improved by 27 dB.
Finally, Slide number 11 of the Appendix A is a summary table which also includes IM2 data. Slide number 11 shows almost 20 dB improvement for a low frequency blocker and 11 dB for a high frequency blocker. In one exemplary application wherein the SP6T may be used, all IM products must fall below −105 dBm. The improved SP6T switch is the only RF switch manufactured at the time of filing the present application meeting this requirement.
A number of embodiments of the present inventive concept have been described. Nevertheless, it will be understood that various modifications may be made without departing from the scope of the inventive teachings. For example, it should be understood that the functions described as being part of one module may in general be performed equivalently in another module. Also, as described above, all of the RF switch circuits can be used in bi-directionally, with output ports used to input signals, and vice versa. Furthermore, the present inventive teachings can be used in the implementation of any circuit that will benefit from the removal of accumulated charge from MOSFET bodies. The present teachings will also find utility in circuits wherein off-state transistors must withstand relatively high voltages. Other exemplary circuits include DC-to-DC converter circuits, power amplifiers, and similar electronic circuits.
Accordingly, it is to be understood that the concepts described herein are not to be limited by the specific illustrated embodiments, but only by the scope of the appended claims.
Claims
1. A Radio Frequency (RF) switching method comprising the steps of:
- providing an RF input port;
- configuring the RF input port to receive an RF signal;
- providing an RF output port;
- providing a switch transistor grouping having a first node and second node;
- coupling the first node of the switch transistor grouping to the RF input port;
- coupling the second node of the switch transistor grouping to the RF output port;
- providing a shunt transistor grouping having a first node and a second node, the shunt transistor grouping comprising one or more accumulated charge control N-type MOSFETs (ACC N-MOSFET) wherein each of the one or more ACC-NMOSFETs comprises: a gate, drain, source and a gate oxide layer, where the gate oxide layer is positioned between the gate and a body; and an accumulated charge sink (ACS) region connected to the body;
- coupling the first node of the shunt transistor grouping to the RF input port;
- coupling the second node of the switch shunt transistor grouping to ground;
- in a first state: (a) enabling the switch transistor grouping and disabling the shunt transistor grouping thereby passing the RF input signal from the RF input port to the RF output port; (b) biasing each of the one or more ACC-MOSFETs ACC N-MOSFETs to operate in an accumulated charge regime; (c) for each of the one or more ACC N-MOSFETs: applying a bias voltage, to the ACS region to control or to remove accumulated charge from the body via the ACS region, wherein the bias voltage is negative with respect to ground, the drain and the source;
- in a second state: (d) enabling the shunt transistor grouping and disabling the switch transistor grouping, thereby isolating the RF input port from the RF output port.
2. The RF switching method of claim 1 used in an RF switching circuit.
3. The RF switching method of claim 2, wherein the RF switching circuit is implemented inside a cellular communication device.
4. The RF switching method of claim 3, wherein the cellular communication device is a GSM cell phone.
5. The RF switching method of claim 3, wherein the cellular communication device is used in a cellular communication system where the harmonics are at a level below −30 dBm.
6. The RF switching method of claim 2, wherein steps (b)-(c) are for improving linearity, harmonic and intermodulation suppression, and power consumption performance characteristics of the RF switching circuit.
7. The RF switching method of claim 1, further comprising the step of fabricating the one or more ACC N-MOSFETs on direct silicon bond substrates by bonding and electrically attaching a film of single-crystal silicon onto a base insulating substrate or on an insulating layer on a base silicon substrate.
8. The RF switching method of claim 1, wherein all the steps are implemented on a single die.
9. The RF switching method of claim 1, wherein all the steps are implemented on a single die.
10. The RF switching method of claim 1, further comprising the step of connecting drain-to-source resistors to the one or more ACC N-MOSFET; the drain-to-source resistors providing a conduction path between corresponding one or more ACC-N-MOSFETs' drains and sources.
11. The RF switching method of claim 10, further comprising the step of coupling a gate resistor to each gate of each of the one or more ACC N-MOSFETs.
12. A Radio Frequency (RF) switching method comprising the steps of:
- providing a first RF port;
- configuring the first RF port to receive or output a first RF signal;
- providing a second RF port;
- configuring the second RF port to receive or output a second RF signal;
- providing an RF common port;
- providing a first switch transistor grouping having a first node and a second node, the first switch transistor grouping comprising a first one or more accumulated charge control N-type MOSFETs (ACC N-MOSFETs), wherein each of the first one or more ACC-NMOSFETs comprises: a first gate, first drain, first source and a first gate oxide layer positioned between the first gate and a first body; and a first accumulated charge sink (ACS) region connected to the first body;
- coupling the first node of the first switch transistor grouping to the first RF port;
- coupling the second node of the first switch transistor grouping to the RF common port;
- providing a second switch transistor grouping having a first node and a second node, the second switch transistor grouping comprising a second one or more ACC N-MOSFETs, wherein each of the second one or more ACC N-MOSFETs comprises: a second gate, second drain, second source and a second gate oxide layer positioned between the second gate and a second body; and a second accumulated charge sink (ACS) region connected to the second body;
- coupling the first node of the second switch transistor grouping to the second RF port;
- coupling the second node of the second switch transistor grouping to the RF common port;
- in a first state: (a) enabling the first switch transistor grouping and disabling the second switch transistor grouping, thereby electrically coupling the first RF port with the RF common port and isolating the second RF port from the RF common port; (b) biasing each of the second one or more ACC N-MOSFETs to operate in an accumulated charge regime; (c) for each of the second one or more ACC N-MOSFETs: applying a second bias voltage, to the second ACS region to control or to remove accumulated charge from the second body via the second ACS region, wherein the second bias voltage is negative with respect to ground, the second drain and the second source;
- in a second state: (d) enabling the second switch transistor grouping and disabling the first switch transistor grouping thereby electrically coupling the second RF port with the RF common port and isolating the first RF port from the RF common port; (e) biasing each of the first one or more ACC N-MOSFETs to operate in an accumulated charge regime; (f) for each of the first one or more ACC N-MOSFETs: applying a first bias voltage, to the first ACS region to control or to remove accumulated charge from the first body via the first ACS region, wherein the first bias voltage is negative with respect to ground, the first drain and the first source.
13. The RF switching method of claim 12 used in an RF switching circuit.
14. The RF switching method of claim 13, wherein the RF switching circuit is implemented inside a cellular communication device.
15. The RF switching method of claim 14, wherein the cellular communication device is a GSM cell phone.
16. The RF switching method of claim 14, wherein the cellular communication device is used in a cellular communication system.
17. The RF switching method of claim 12, wherein steps (b)-(c) and (e)-(f) are for improving linearity, harmonic and intermodulation suppression, and power consumption performance characteristics of the RF switching circuit.
18. The RF switching method of claim 12, further comprising the step of fabricating the first and the second one or more ACC N-MOSFETs on direct silicon bond substrates by bonding and electrically attaching a film of single-crystal silicon onto a base insulating substrate or on an insulating layer on a base silicon substrate.
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| WO2006038190 | April 2006 | WO |
| WO07008934 | January 2007 | WO |
| WO07033045 | March 2007 | WO |
| WO07035610 | March 2007 | WO |
| WO09108391 | September 2009 | WO |
| WO12054642 | April 2012 | WO |
- US 10,700,199 B1, 06/2020, Brindle (withdrawn)
- US 10,700,200 B1, 06/2020, Brindle (withdrawn)
- Voldman—“Dynamic Threshold Body- and Gate-coupled SOI ESD Protection Networks”, Journal of Electrostatics 44, Mar. 20, 1998, pp. 239-255, Doc 8015.
- Matloubian—“Smart Body Contact for SOI MOSFETs” 1989 IEEE SOS/SOI Technology Conference pp. 128-129, Oct. 3-5, 1989, 2 pages, Doc 0425.
- Hieda—Floating-Body Effect Free Concave SOI-MOSFETs (COSMOS), ULSI Research Center, Toshiba Corporation, IEEE 1991, pp. 26.2.1-26.2.4, Dec. 8-11, 1991, 4 pages, Doc 0187.
- Patel—“A Novel Body Contact for SIMOX Based SOI MOSFETs”, Solid-State Electronics vol. 34, No. 10, pp. 1071-1075, Apr. 22, 1991, 6 pages, Doc 3000.
- Katzin—“High Speed 100+ W RF Switched Using GaAs MMICs”, IEEE Transactions on Microwave Theory and Techniques, Nov. 1992, pp. 1989-1996, 8 pages, Doc 0194.
- Armijos—“High Speed DMOS FET Analog Switches and Switch Arrays”, Temic Semiconductors Jun. 22, 1994, pp. 1-10, 10 pages, Doc 0202.
- LI—“Suppression of Geometric Component of Charge Pumping Current SOI/MOSFETs”, Proc. Int. Symp. VLSI Technology, Systems & Applications (IEEE May 31-Jun. 2, 1995), pp. 144-148, 5 pages, Doc 8016.
- Chan—“A Novel SOI CBiCMOS Compatible Device Structure for Analog and Mixed-Mode Circuits”, Dept. of EECS, University of California at Berkeley, IEEE Nov. 1995, pp. 40-43, 4 pages, Doc 1078.
- Kohama—“High Power DPDT Antenna Switch MMIC for Digital Cellular Services”, IEEE Journal of Solid-State Circuits, Oct. 1996, pp. 1406-1411, 6 pages, Doc 0244.
- Tenbroek—“Electrical Measure of Silicon Film and Oxide Thickness in Partially Depleted SOI Technologies”, Solid-State Electronics, vol. 39, No. 7, pp. 1011-1014, Nov. 14, 1995, 4 pages. Doc 8019.
- NEC Corporation—“uPG13xG Series L-Band SPDT Switch GaAs MMIC”, Document No. P1096EJ1VOANDO (1st Edition), Feb. 1996, 30 pages, Doc 0248.
- Kuge—“SOI-DRAM Circuit Technologies for Low Power High Speed Multigiga Scale Memories”, Jun. 8-10, 1995, IEEE Journal of Solid-State Circuits, vol. 31, No. 4, Apr. 1996, pp. 586-591, 6 pages, Doc 0259.
- Fung—“Frequency Dispersion in Partially Depleted SOI MOSFET Output Resistance”, Proceedings 1996 IEEE International SOI Conference, Oct. 1996, pp. 146-147, 2 pages, Doc 0268.
- Yamamoto—“A Single-Chip GaAs RF Transceiver for 1.9GHz Digital Mobile Communication Systems”, IEEE Dec. 1996, pp. 1964-1973, 10 pages, Doc 0255.
- Johnson—“Silicon-On-Sapphire Technology for Microwave Circuit Applications”, Dissertation UCSD Jan. 1997, IEEE May 1998, pp. 1-184, 214 pages, Doc 0288.
- Koh—“1Giga Bit SOI DRAM with Fully Bulk Compatible Process and Body-Contacted SOI MOSFET Structure”, IEEE Dec. 10, 1997, pages, Doc 8021.
- Maeda—“A Highly Reliable .35 μm Field Body-Tied SOI Gate Array for Substrate-Bias-Effect Free Operation”, 1997 Symposium on VLSI Technology Digest of Technical Papers, Jun. 10-12, 1997, 2 pages, Doc 8020.
- Koh—“Body-Contacted SOI MOSFET Structure with Fully Bulk CMOS Compatible Layout and Process”, IEEE Electron Device Letters, vol. 18, No. 3, Mar. 1997, pp. 102-104, 3 pages, Doc 0305.
- Huang—“Device Physics, Performance Simulations and Measured Results of SOI MOS and DTMOS Transistors and Integrated Circuits”, Beijing Microelectronics Technology Institute, Oct. 23, 1998 IEEE, pp. 712-715, 4 pages, Doc 0333.
- Hirota—“0.5V 320MHz 8b Multiplexer/Demultiplier Chips Based on a Gate Array with Regular-Structured DRMOS/SOI”, Feb. 5-7, 1998, 1998 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, ISSCC. First Edition, pp. 12.2-1-12.2-11, 11 pages, Doc 0351.
- Chuang—“SOI for Digital CMOS VLSI Design: Design Considerations and Advances”, Proceedings of the IEEE vol. 86, No. 4, Apr. 1, 1998 pp. 689-720, 32 pages, Doc 1079.
- Duyet—“Suppression of Geometric Component of Charge Pumping Current in Thin Film Silicon on insulator Metal-Oxide-Semiconductor Field-Effect Transistors”, Japanese Journal of Applied Physics, Jul. 15, 1998, vol. 37, pp. L855-858, 4 pages, Doc 0729.
- Gil—“A High Speed and Low Power SOI Inverter using Active Body-Bias”, Proceedings International Symposium on Low Power Electronics and Design, Sep. 1998, pp. 59-63, 5 pages, Doc 0359.
- Tseng—“AC Floating-Body Effects an Submicron Fully Depleted (FD) SOI nMOSFETs and the Impact on Analog Applications”, IEEE Electron Devices, vol. 19, No. 9, Sep. 1998, pp. 351-353, 3 pages, Doc 0362.
- Duyet—“Effects of Body Reverse Pulse Bias on Geometric Component of Charge Pumping Current in FD SOI MOSFETs”, Proceedings IEEE Intl SOI Conference, Oct. 5-8, 1998, pp. 79-80, 2 pages, Doc 0364.
- Chung—“A New SOI MOSFET Structure with Junction Type Body Contact”, International Electron Device Meeting (IEDM) Technical Digest, Dec. 5-8, 1999, pp. 59-62, 4 pages, Doc 0379.
- Devlin—“The Design of Integrated Switches and Phase Shifters”, Nov. 24, 1999, 15 pages, Doc 0381.
- Lim—“Partial SOI LDMOSFETs for High-Side Switching”, Dept. of Engineering, University of Cambridge, Oct. 5-9, 1999 IEEE, pp. 149-152, 4 pages, Doc 0393.
- Maeda—“Substrate Bias Effect and Source Drain Breakdown Characteristics in Body Tied Short Channel SOI MOSFETs”, IEEE Transactions on Electron Devices, vol. 46, No. 1, Jan. 1999, pp. 151-158, 8 pages, Doc 0397.
- Rodgers—“Silicon UTSi CMOS RFIC for CDMA Wireless Communications System”, IEEE MTT-S Digest, Jun. 14-15, 1999, pp. 485-488, 4 pages, Doc 0406.
- Yamamoto—“A 2.2-V Operation, 2.4-GHz Single-Chip GaAs MMIC Transceiver for Wireless Applications”, IEEE Journal of Solid-State Circuits, vol. 34, No. 4, Apr. 1999, pp. 502-512, 11 pages, Doc 0417.
- Chen—“Low Power, Multi-Gigabit DRAM Cell Design Issues Using SOI Technologies”, http://bwrc.eecs.berkeley.edu/people/grad_students/chenff/reports, May 14, 1999, 6 pages, Doc 0418.
- Allen—“Characterization and Modeling of Silicon-on-Insulator Field Effect Transistors”, Department of Electrical Engineering and Computer Science, MIT May 20, 1999, 80 pages, Doc 0419.
- Tseng—“AC Floating-Body Effects and the Resultant Analog Circuit Issues in Submicron Floating Body and Body-Grounded SOI MOSFETs”, IEEE Transactions on Electron Devices, vol. 46, No. 8, Aug. 1999, 8 pages, Doc 0420.
- Fung—“Controlling Floating-Body Effects for 0.13 μm and 0.10 μm SOI CMOS”, IDEM 00-231-234, Dec. 10-13, 2000, IEEE, 4 pages, Doc 8017.
- Imam—“A Simple Method to Determine the Floating-Body Voltage of SOI CMOS Devices”, IEEE Electron Device Letters, vol. 21, No. 1, Jan. 2000, pp. 21-23, 3 pages, Doc 0441.
- Kanda—“A Si RF Switch MMIC for the Cellular Frequency Band Using SOI-CMOS Technology”, The Institute of Electronics, Information and Communication Engineers, vol. 100, No. 152, Jun. 2000, pp. 79-83, 5 pages, Doc 0443.
- Shahidi—“Issues in SOI CMOS Technology and Design”, IEEE 2000 Custom Integrated Circuits Conference, Publication/Presentation dated May 21, 2000, 78 pages, Doc 8014.
- Horiuchi—“A Dynamic-Threshold SOI Device with a J-FET Embedded Source Structure and a Merged Body-Bias-Control Transistor—Part II: Circuit Simulation”, IEEE Transactions on Electron Devices, vol. 47, No. 8, Aug. 2000, pp. 1593-1598, 6 pages, Doc 0457.
- Horiuchi—“A Dynamic-Threshold SOI Device with a J-FET Embedded Source Structure and a Merged Body-Bias-Control Transistor—Part I: A J-Fet Embedded Source Structure Properties”, IEEE Transactions on Electron Devices, vol. 47, No. 8, Aug. 2000, pp. 1587-1592, 6 pages, Doc 0456.
- Scheinberg—“A Computer Simulation Model for Simulating Distortion in FET Resistors”, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 19, No. 9, Sep. 2000, pp. 981-989, 9 pages, Doc 0461.
- Cristoloveanu—“The Four-Gate Transistor”, Institute of Microelectronics, Electromagnetism and Photonics, ESSDERC Sep. 24-26, 2002, pp. 323-326, 4 pages, Doc 0478.
- Reedy—“Utsi CMOS: A Complete RF SOI Solution”, Peregrine Semiconductor Nov. 2000, pp. 1-6, 6 pages, Doc 0508.
- Yamamoto—“A 2.4GHz Band 1.8V Operation Single Chip SI-CMOS T/R MMIC Front End with a Low Insertion Loss Switch”, IEEE Journal of Solid-State Circuits, vol. 36, No. 8, Aug. 2001, pp. 1186-1197, 12 pages, Doc 0527.
- Adan—“OFF-State Leakage Current Mechanisms in BulkSi and SOI MOSFETs and Their Impact on CMOS ULSIs Standby Current”, IEEE Transactions on Electron Devices, vol. 48, No. 9, Sep. 2001, pp. 2050-2057, 8 pages, Doc 0528.
- Goldman—“0.15 μm SOI DRAM Technology Incorporating Sub-Volt Dynamic Threshold Devices for Embedded Mixed-Signal & RF Circuits”, Oct. 1-4, 2001 IEEE SOI Conference, pp. 97-98, 2 pages, Doc 0531.
- Fung—“Present Status and Future Direction of BSIM SOIL Model for High-Performance/Low-Power/RF Application”, IBM Microelectronics, Semiconductor Research and Development Center, April 2002, 4 pages, Doc 0554.
- Adan—“Linearity and Low-Noise Performance of SOI MOSFETs for RF Applications”, IEEE Transactions on Electron Devices, May 2002 vol. 49, No. 5, pp. 881-888, 8 pages, Doc 0555.
- Akarvardar—“Multi-Bias Dependence of Threshold Voltage, Subthreshold Swing, and Mobility in G4-FETs”, Institute of Microelectronics, Electromagnetism, and Photonics, IEEE Oct. 2003, pp. 127-130, 4 pages, Doc 1075.
- Dufrene—“The G4-FET: Low Voltage to High Voltage Operation and Performance”, Dept. of Electrical and Computer Engineering, The University of Tennessee, IEEE Jan. 2003, pp. 55-56, 2 pages, Doc 0565.
- Marks—“SOI for Frequency Synthesis in RF Integrated Circuits”, Thesis submitted to North Carolina State University, May 2003, 155 pages, Doc 0574.
- Zhu Ming—“A New Structure of Silicon-on-Insulator Metal-Oxide Semiconductor Field Effect Transistor to Suppress the Floating Body Effect”, Nov. 4, 2002, Chin. Phys. Lett., vol. 20, No. 5 (2003) pp. 767-769, 3 pages, Doc 0575.
- Fung—“On the Body-Source Built-In Potential Lowering of SOI MOSFETS”, IEEE Electron Device Letters, vol. 24, No. 2, Feb. 2003, pages, Doc 8018.
- Tinella—“Study of the Potential of CMOS-SOI Technologies Partially Abandoned for Radiofrequency Applications”, Thesis for obtaining the standard of Doctor of INPG, National Polytechnic of Grenoble, Sep. 25, 2003, 187 pages, Doc 0594.
- De Houck—“Design of EEPROM Memory Cells in Fully Depleted ‘CMOS SOI Technology’”, Universite Catholique de Louvain Faculty of Applied Science, Laboratory of Electronics and Microelectronics, Academic Year 2003-2004, Jan. 2003, 94 pages, Doc 0599.
- Streetman—“Solid State Electronic Devices”, Microelectronics Research Center, Dept. of Electrical and Computer Engineering, The University of Texas at Austin, Chapter 6, Jan. 2004 by Pearson Education Inc., 4 pages, Doc 0602.
- Zhu—“Simulation of Suppression of Floating-Body Effect in Partially Depleted SOI MOSFET Using a Sil-xGex Dual Source Structure”, Materials Science and Engineering B 114-115 Dec. 15, 2004, pp. 264-268, 5 pages, Doc 0604.
- Chen—“G4-FET Based Voltage Reference”, Masters Theses, University of Tennessee, Knoxville, Trace: Tennessee Research and Creative Exchange, May 2004, 57 pages, Doc 0607.
- Ippoushi—“SOI Structure Avoids Increases in Chip Area and Parasitic Capacitance Enables Operational Control of Transistor Threshold Voltage”, Renesas Edge, vol. 2004.5, Jul. 2004, p. 15, 1 page, Doc 0610.
- Akarvardar—“Threshold Voltage Model of the SOI 4-Gate Transistor”, 2004 IEEE International SOI Conference, October 4-7, 2004, pp. 89-90, 2 pages, Doc 0613.
- Dufrene—“Investigation of the Four-Gate Action in G4-FETs”, IEEE Transactions on Electron Devices, vol. 51, No. 11, Dec. 2004, pp. 1931-1935, 5 pages, Doc 0617.
- Cathelin—“Antenna Switch Devices in RF Modules for Mobile Applications”, ST Microelectronics, Front-End Technology Manufacturing, Crolles, France, Mar. 2005, 42 pages, Doc 0623.
- Analog Devices—“LC2MOS High Speed, Quad SPST Switch”, Rev. B, 8 pages, Apr. 1988, Doc 1076.
- Analog Devices—“LC2MOS Quad SPST Switch”, Rev. B, 6 pages, Jul. 1992, Doc 1077.
- Le TMOS en technologie SOI, 3.7.2.2 Pompage de charges, pp. 110-111, 2 pages, Doc 1081.
- Linear Systems—“High-Speed DMOS FET Analog Switches and Switch Arrays”, 11 pages, Doc 1082.
- Orndorff—“CMOS/SOS/LSI Switching Regulator Control Device”, IEEE International Solid-State Circuits Conference, ISSCC 78, Feb. 1978, pp. 234-235, 282, 3 pages, Doc 0151.
- Nelson Pass—Pass Labs, “Cascode Amp Design”, Audio Electronics, pp. 1-4, Mar. 1978, 4 pages, Doc 0153.
- Kwok—“An X-Band SOS Resistive Gate Insulator Semiconductor (RIS) Switch”, IEEE Transactions on Electron Device, Feb. 1980, pp. 442-448, 7 pages, Doc 0154.
- Ayasli—“An X-Band 10 W Monolithic Transmit-Receive GaAs FET Switch”, Raytheon Research Division, May 31-Jun. 1, 1983 IEEE, pp. 42-46, 5 pages, Doc 0155.
- Ayasli—“Microwave Switching with GaAs FETs”, Microwave Journal, Nov. 1982, pp. 719-723, 10 pages, Doc 0156.
- Pucel—“A Multi-Chip GaAs Monolithic Transmit/Receive Module for X-Band”, Research Division. Raytheon Company, Jun. 15-17, 1982 IEEE MTT-S Digest, pp. 489-492, 4 pages, Doc 0157.
- Sedra—“Microelectronic Circuits”, University of Toronto, Oxford University Press, Fourth Edition, 1982, 1987, 1991, 1998, pp. 374-375, 4 pages, Doc 0158.
- Ayasli—“A Monolithic Single-Chip X-Band Four-Bit Phase Shifter”, IEEE Transactions on Microwave Theory and Techniques, vol. MTT-30, No. 12, Dec. 1982, pp. 2201-2206, 6 pages, Doc 0159.
- Heller—“Cascode Voltage Switch Logic: A Different CMOS Logic Family”, IEEE International Solid-State Circuits Conference, Feb. 22-24, 1984, pp. 16-17, 2 pages, Doc 0160.
- Gopinath—“GaAs FET RF Switches”, IEEE Transactions on Electron Devices, Jul. 1985, pp. 1272-1278, 7 pages, Doc 0161.
- Yamao—“GaAs Broadband Monolithic Switches”, 1986, pp. 63-71, 10 pages, Doc 0162.
- Barker—“Communications Electronics-Systems, Circuits and Devices”, Jan. 1, 1987 Prentice-Hall, 347 pages, Doc 0163 (A-D).
- Harjani—“A Prototype Framework for Knowledge Based Analog Circuit Synthesis”, IEEE Design Automation Conference, Jun. 28-Jul. 1, 1987, pp. 42-49, 8 pages, Doc 0164.
- Colinge—“An SOI Voltage-Controlled Bipolar-MOS Device”, IEEE Transactions on Electron Devices, vol. ED-34, Apr. 1987, pp. 845-849, 5 pages, Doc 0165.
- Schindler—“DC-40 GHz and 20-40GHz MMIC SPDT Switches”, IEEE Transactions of Electron Devices, vol. ED-34, No. 12, Dec. 1987, pp. 2595-2602, 8 pages, Doc 0167.
- Colinge—“Fully Depleted SOI CMOS for Analog Applications”, IEEE Transactions on Electron Devices, 1998, pp. 1010-1016, 7 pages, Doc 0168.
- Nakayama—“A 1.9 GHz Single-Chip RF Front End GaAs MMIC with Low-Distortion Cascode FET Mixer for Personal Handy-Phone System Terminals”, Radio Frequency Integrated Circuits Symposium, 1988, pp. 205-208, 4 pages, Doc 0169.
- Peregrine Semiconductor Corporation—“An Ultra-Thin Silicon Technology that Provides Integration Solutions on Standard CMOS”, 1988, 4 pages, Doc 0170.
- Shifrin—“High Power Control Components Using a New Monolithic FET Structure”, IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1988, pp. 51-56, 6 pages, Doc 0171.
- Schindler—“DC-20 GHz N X M Passive Switches”, IEEE Transactions on Microwave Theory and Techniques, vol. 36, No. 12, Dec. 1988, pp. 1604-1613, 10 pages, Doc 0172.
- Eisenberg—“High Isolation 1-20 GHz MMIC Switches with On-Chip Drivers”, IEEE Microwave and Millimeter Wave Monolithic Circuits Symposium, 1989, pp. 41-45, 5 pages, Doc 0173.
- Houng—“60-70 dB Isolation 2-19 GHz Switches”, Raytheon Electromagnetic Systems Division, 1989 IEEE, GaAs IC Symposium, pp. 173-176, 4 pages, Doc 0174.
- Schindler—“A 2-18 GHz Non-Blocking Active 2×2 Switch”, Raytheon Company, 1989 IEEE, GaAs IC Symposium, pp. 181-183, 3 page, Doc 0175.
- Slobodnik—“Millimeter Wave GaAs Switch FET Modeling”, Microwave Journal, 1989, 7 pages, Doc 0176.
- Chen—“Dual-Gate GaAs FET: A Versatile Circuit Component for MMICs”, Microwave Journal, Jun. 1989, pp. 125-135, 7 pages, Doc 0177.
- Shifrin—“Monolithic FET Structure for High Power Control Component Applications”, IEEE Transactions on Microwave Theory and Techniques, vol. 37, No. 12, Dec. 1989, pp. 2134-2142, 8 pages, Doc 0178.
- Schindler—“A High Power 2-18 GHz T/R Switch”, 1988 IEEE, IEEE 1990 Microwave and Millimeter-Wave Circuits Symposium, pp. 119-122, 4 pages, Doc 0180.
- Schindler—“A Single Chip 2-20 GHz T/R Module” 1988 IEEE, IEEE 1990 Microwave and Millimeter-Wave Monolithic Circuits Symposium, pp. 99-102, 4 pages, Doc 0182.
- Valeri—“A Composite High Voltage Device Using Low Voltage SOI MOSFETs”, IEEE, 1990, pp. 169-170, 2 pages, Doc 0183.
- Yun—“High Power-GaAs MMIC Switches with Planar Semi-Insulated Gate FETs (SIGFETs)”, International Symposium on Power Semiconductor Devices & Ics, 1990, pp. 55-58, 4 pages, Doc 0184.
- Wang—“Threshold Voltage Instability at Low Temperatures in Partially Depleted Thin Film SOI MOSFETs”, IEEE SOS/SOI Technology Conference, Jun. 1991, pp. 91-92, 2 pages, Doc 0185.
- Bernkopf—“ A High Power K/Ka-Band Monolithic T/R Switch”, 1991 IEEE, IEEE 1991 Microwave and Millimeter-Wave Monolithic Circuits Symposium, pp. 15-18, 4 pages, Doc 0186.
- McGrath—“Multi Gate FET Power Switches”, Applied Microwave 1991, pp. 77-88, 7 pages, Doc 0188.
- McGrath—“Novel High Performance SPDT Power Switches Using Multi-Gate FETs”, 1991 IEEE, 1991 IEEE MTT-S Digest, pp. 839-842, 4 pages, Doc 0189.
- Valeri—“A Silicon-on-Insulator Circuit for High Temperature, High-Voltage Applications”, IEEE, 1991, pp. 60-61, 2 pages, Doc 0191.
- Giffard: “Dynamic Effects in SOI MOSFETs”, IEEE SOS/SOI Technology Conference, Oct. 1991, pp. 160-161, 2 pages, Doc 0192.
- Baker—“Stacking Power MOSFETs for Use in High Speed Instrumentation”, American Institute of Physics, 1992, pp. 5799-5801, 3 pages, Doc 0193
- Eron—“Small and Large Signal Analysis of MESETs as Switches”, Microwave Journal, 1995, 7 pages, Doc 0216.
- Kusunoki—“SPDT Switch MMIC Using E/D Mode GaAs JFETs for Personal Communications”, IEEE GaAs IC Symposium, 1992, pp. 135-138, 4 pages, Doc 0195.
- Shifrin—“A New Power Amplifier Topology with Series Biasing and Power Combining of Transistors”, IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1992, pp. 39-41, 3 pages, Doc 0196.
- Van Der Pujie—“Telecommunication Circuit Design”, Wiley 1992, 187 pages, Doc 0197 (A-B).
- Baker—“Series Operation of Power MOSFETs for High Speed Voltage Switching Applications”, American Institute of Physics, 1993, pp. 1655-1656, 2 pages, Doc 0198.
- Devlin—“A 2.4 GHz Single Chip Transceiver”, Microwave and Millimeter-Wave Monolithic Circuits Symposium 1993, pp. 23-26, 4 pages, Doc 0199.
- Uda—“High Performance GaAs Switch IC's Fabricated Using MESFETs with Two Kinds of Pinch Off Voltages”, IEEE GaAs IC Symposium, 1993, pp. 247-250, 4 pages, Doc 0200.
- Apel—“A GaAs MMIC Transceiver for 2.45 GHz Wireless Commercial Products”, Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994, pp. 15-18, 4 pages, Doc 0201.
- Assaderaghi—“A Dynamic Threshold Voltage Mosfet (DTMOS) for Ultra-low Voltage Operation”, 1994, IEEE p. 33.1.1-33.1.4, 4 pages, Doc 0203.
- Baker—“Designing Nanosecond High Voltage Pulse Generators Using Power MOSFETs”, Electronic Letters, 1994, pp. 1634-1635, 2 pages, Doc 0204.
- Caverly—“Distortion in GaAs MESFET Switch Circuits”, 1994, 5 pages, Doc 0205.
- Miyatsuji—“A GaAs High Power RF Single Pole Double Throw Switch IC for Digital Mobile Communication System”, IEEE International Solid-State Circuits Conference, 1994, pp. 34-35, 2 pages, Doc 0206.
- Puechberty—“A GaAs Power Chip Set for 3V Cellular Communications”, 1994, 4 pages, Doc 0207.
- Szedon—“Advanced Silicon Technology for Microwave Circuits.” Naval Research Laboratory, 1994, pp. 1-110, 122 pages, Doc 0208.
- Uda—“High-Performance GaAs Switch IC's Fabricated Using MESFETs with Two Kinds of Pinch-off Voltages and a Symmetrical Pattern Configuration”, IEEE Journal of Solid-State Circuits, vol. 29, No. 10, Oct. 1994, pp. 1262-1269, 8 pages, Doc 0209.
- Assaderaghi—“Dynamic Threshold Voltage MOSFET (DTMOS) for Ultra Low Voltage Operation”, International Electron Devices Meeting, Dec. 1994, pp. 809-812, 4 pages, Doc 0212.
- Abidi—“Low Power Radio Frequency IC's for Portable Communications”, IEEE 1995, pp. 544-569, 26 pages, Doc 0213.
- Couch—“Modern Communication System”, Prentice-Hall, 1995, 316 pages, Doc 0214 (A-D).
- De La Houssaye—“Microwave Performance of Optically Fabricated T-Gate Thin Film Silicon on Sapphire Based MOSFETs”, IEEE Electron Device Letters, 1995, pp. 289-292, 4 pages, Doc 0215.
- Gautier—“Body Charge Related Transient Effects in Floating Body SOI NMOSFETs”, IEDM Tech. Digest 1995, pp. 623-626, 4 pages, Doc 0217.
- Hittite Microwave—“Miniature Dual Control SP4T Switches for Low Cost Multiplexing”, Hittite Microwave, 1995, 5 pages, Doc 0218.
- Ionescu—“A Physical Analysis of Drain Current Transients at Low Drain Voltage in Thin Film SOI MOSFETs”, Microelectronic Engineering 28 (1995), pp. 431-434, 4 pages, Doc 1085.
- Keys—“Low Distortion Mixers or RF Communications”, Ph.D. Thesis, University of California—Berkeley, 1995, 135 pages, Doc 0219.
- Kohama—“High Power DPDT Antenna Switch MMIC for Digital Cellular Systems”, GaAs IC Symposium, 1995, pp. 75-78, 4 pages, Doc 0220.
- Lovelace—“Silicon MOSFET Technology for RF Ics”, IEEE 1995, pp. 1238-1241, 4 pages, Doc 0221.
- Matsumoto—“Fully Depleted 30-V-Class Thin Film SOI Power MOSFET”, IEDM 95-979, Dec. 10-13, 1995, pp. 38.6.1-38.6.4, 4 pages, Doc 0222.
- McGrath—“A 1.9-GHz GaAs Chip Set for the Personal Handyphone System”, IEEE Transaction on Microwave Theory and Techniques, 1995, pp. 1733-1744, 12 pages, Doc 0223.
- Microwave Journal—“A Voltage Regulator for GaAs FETs”, Microwave Journal 1995, 1 page, Doc 0224.
- Miyatsuji—“A GaAs High Power RF Single Pole Dual Throw Switch IC for Digital Mobile Communication System”, IEEE Journal of Solid-State Circuits, 1995, pp. 979-983, 5 pages, Doc 0226.
- Sanders—“Statistical Modeling of SOI Devices for the Low Power Electronics Program”, AET, Inc., 1995, pp. 1-109, 109 pages, Doc 0227.
- Tokumitsu—“A Low-Voltage, High-Power T/R-Switch MMIC Using LC Resonators”, IEEE Transactions on Microwave Theory and Techniques, vol. 43, No. 5, May 1995, pp. 997-1003, 7 pages, Doc 0228.
- Morishita—“Leakage Mechanism Due to Floating Body and Countermeasure on Dynamic Retention Mode of SOI-DRAM”, 1995 Symposium on VLSI Technology Digest of Technical Papers, Apr. 1995, pp. 141-142, 2 pages, Doc 0229.
- Suh—“A Physical Change-Based Model for Non-Fully Depleted SOI MOSFETs and Its Use in Assessing Floating-Body Effects in SOI SMOS Circuits”, IEEE Transactions on Electron Devices, vol. 42, No. 4, Apr. 1995, pp. 728-737, 10 pages, Doc 0230.
- Cherne—U.S. Statutory Invention Registration No. H1435, published May 2, 1995, 12 pages, Doc 0232.
- Ota—“High Isolation and Low Insertion Loss Switch IC Using GaAa MESFETS”, IEEE Transactions on Microwave Theory and Techniques, vol. 43, No. 9, Sep. 1995, pp. 2175-2177, 3 pages, Doc 0233.
- Chan—“Comparative Study of Fully Depleted and Body-Grounded Non Fully Depleted SOI MOSFETs for High Performance Analog and Mixed Signal Circuits”, IEEE Transactions on Electron Devices, vol. 42, No. 11, Nov. 1995, pp. 1975-1981, 7 pages, Doc 0234.
- Assaderaghi—“History Dependence of Non-Fully Depleted (NFD) Digital SOI Circuits”, 1996 Symposium on VLSI Technology Digest of Technical Papers 13.1, 1996, pp. 122-123, 2 pages, Doc 0235.
- Burghartz—“Integrated RF and Microwave Components in BiCMOS Technology”, IEEE Transactions on Electron Devices, 1996, pp. 1559-1570, 12 pages, Doc 0236.
- Colinge—“A Low Voltage Low Power Microwave SOI MOSFET”, IEEE International SOI Conference, 1996, pp. 128-129, 2 pages, Doc 0237.
- Douseki—“A 0.5v SIMOX-MTMCOS Circuit with 200ps Logic Gate”, IEEE International Solid-State Circuits Conference 1996, pp. 84-85, 423, 3 pages, Doc 0238.
- Eggert—“CMOS/SIMOX-RF-Frontend for 1.7 GHz”, Solid State Circuits Conference, 1996, 4 pages, Doc 0239.
- Gentinne—“Measurement and Two-Dimensional Simulation of Thin-Film SOI MOSFETs: Intrinsic Gate Capacitances at Elevated Temperatures”, Solid-State Electronics, vol. 39, No. 11, pp. 1613-1619, 1996, 7 pages, Doc 0240.
- Hagan (or Hagen)—Radio Frequency Electronics:, Cambridge University Press 1996, 194 pages, Doc 0241(A-B).
- Imai—“Novel High Isolation FET Switches”, IEEE Transactions on Microwave Theory and Techniques 1996, pp. 685-691, 7 pages, Doc 0242.
- Intersil—“RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays”, Intersil Corporation 1996, pp. 1-4, 4 pages, Doc 0243.
- Kuroda—“A 0.9-V, 150-Mhz, 10-mW, 4 mm2, 2-D Discrete Cosine Transform Core Processor with Variable-Threshold-Voltage (VT) Scheme”, Technical Paper, 1996 IEEE International Solid-State Circuits Conference, 1996 Digest of Technical Papers, pp. 166-167, 14 pages, Doc 0245.
- Larson—“RF and Microwave Circuit Design for Wireless Communications”, Artech House 1996, 218 pages, Doc 0246 (A-C).
- Nakayama—“A 1.9 GHz Single-Chip RF Front-End GaAs MMIC for Persona Communications”, Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1996, pp. 69-72, 4 pages, Doc 0247.
- Soyuer—“RF and Microwave Building Blocks in a Standard BiCMOS Technology”, IBM T.J. Watson Research Center, 1996 IEEE, pp. 89-92, 4 pages, Doc 0249.
- Suematsu—“L-Band Internally Matched Si-MMIC Front End”, IEEE, 1996, pp. 2375-2378, 4 pages, Doc 0250.
- Titus—“A Silicon BICMOS Transceiver Front-End MMIC Covering 900 and 1900 MHZ Applications”, Hittite Microwave Corporation, IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium, pp. 73-75, 4 pages, Doc 0251.
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- Harris Corporation—HI-5042 thru HI-5051 Datasheet, 1999, 9 pages, Doc 0386.
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- Hittite Microwave—“Positive Bias GaAs Multi-Throw Switches with Integrated TTL Decoders”, Hittite Microwave, 2000, 5 pages, Doc 0438.
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- Street—“R.F. Switch Design”, The Institution of Electrical Engineers, 2000, pp. 4/1-4/7, 7 pages, Doc 0448.
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- Kuang—“A High-Performance Body-Charge-Modulated SOI Sense Amplifier”, IEEE International SOI Conference, Oct. 2000, pp. 100-101, 2 pages, Doc 0463.
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- Terauchi—“A Novel 4T SRAM Cell Using “Self-Body-Biased” SOI MOSFET Structure Operating as 0/5 Volt”, IEEE International SOI Conference, Oct. 2000, pp. 108-109, 2 pages, Doc 0465.
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- Caverly—“Gallium Nitride-Based Microwave and RF Control Devices”, 2001, 17 pages, Doc 0475.
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- Couch—“Digital and Analog Communication Systems”, 2001, Prentice-Hall, 398 pages, Doc 0477 (A-E).
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Type: Grant
Filed: Jan 9, 2020
Date of Patent: Feb 22, 2022
Assignee: pSemi Corporation (San Diego, CA)
Inventors: Christopher N. Brindle (Poway, CA), Michael A. Stuber (Carlsbad, CA), Dylan J. Kelly (San Diego, CA), Clint L. Kemerling (Escondido, CA), George P. Imthurn (San Diego, CA), Robert B. Welstand (San Diego, CA), Mark L. Burgener (San Diego, CA)
Primary Examiner: Tuan H Nguyen
Application Number: 16/738,787
International Classification: H01L 29/66 (20060101); H03K 17/16 (20060101); H03K 17/687 (20060101); H01L 29/786 (20060101); H01L 29/06 (20060101); H01L 29/10 (20060101);
