Patents by Inventor Gerald Lackner
Gerald Lackner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170133253Abstract: A method and an apparatus for use in processing a wafer are disclosed. In an embodiment the method includes providing a wafer on a receptacle, shining a light at an edge of the wafer and based on light that passed the edge of the wafer, processing the wafer on the receptacle.Type: ApplicationFiled: November 5, 2015Publication date: May 11, 2017Inventors: Thomas Fischer, Gerald Lackner, Walter Horst Leitgeb, Michael Lecher
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Publication number: 20160086838Abstract: A wafer arrangement in accordance with various embodiments may include: a wafer; and a wafer support ring, wherein the wafer and the wafer support ring are configured to be releasably attachable to one another.Type: ApplicationFiled: September 19, 2014Publication date: March 24, 2016Inventors: Francisco Javier Santos Rodriguez, Gerald Lackner, Josef Unterweger
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Patent number: 9177893Abstract: In various embodiments, a semiconductor component may include a semiconductor layer having a front side and a back side; at least one electronic element formed at least partially in the semiconductor layer; at least one via formed in the semiconductor layer and leading from the front side to the back side of the semiconductor layer; a front side metallization layer disposed over the front side of the semiconductor layer and electrically connecting the at least one electronic element to the at least one via; a cap disposed over the front side of the semiconductor layer and mechanically coupled to the semiconductor layer, the cap being configured as a front side carrier of the semiconductor component; a back side metallization layer disposed over the back side of the semiconductor layer and electrically connected to the at least one via.Type: GrantFiled: May 17, 2011Date of Patent: November 3, 2015Assignee: INFINEON TECHNOLOGIES AGInventors: Anton Mauder, Gerald Lackner, Oliver Haeberlen
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Publication number: 20150210741Abstract: This invention concerns a novel compound termed jagaricin, jagaricin derivatives, pharmaceutical compositions comprising these compounds, a method for producing jagaricin, and the use of the novel compound as fungicide or antitumor agent.Type: ApplicationFiled: August 22, 2013Publication date: July 30, 2015Inventors: Tom Bretschneider, Katharina Graupner, Christian Hertweck, Gerald Lackner, Kirstin Scherlach
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Patent number: 8993372Abstract: Exemplary embodiments of a method for producing a semiconductor component having a polycrystalline semiconductor body region are disclosed, wherein the polycrystalline semiconductor body region is produced between the first and second surfaces of the semiconductor body in a semiconductor component section, wherein an electromagnetic radiation having a wavelength of at least 1064 nm is introduced into the semiconductor body in a manner focused onto a position in the semiconductor component section of the semiconductor body and wherein the power density of the radiation at the position is less than 1×108 W/cm2.Type: GrantFiled: February 28, 2012Date of Patent: March 31, 2015Assignee: Infineon Technologies Austria AGInventors: Manfred Schneegans, Carsten Ahrens, Adolf Koller, Gerald Lackner, Anton Mauder, Hans-Joachim Schulze
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Patent number: 8865522Abstract: A method for connecting a semiconductor chip to a metal layer of a carrier substrate is disclosed. A semiconductor chip is provided which has a first side, a second side opposite the first side, a glass substrate bonded to the second side of the semiconductor chip and including at least one opening leaving an area of the second side of the semiconductor chip uncovered by the glass substrate, and a metallization region arranged in the opening of the glass substrate and electrically contacting the second side of the semiconductor chip. The semiconductor chip with the bonded glass substrate is brought onto a metal layer of a carrier substrate. A firm mechanical and electrical connection is formed between the metal layer of the carrier substrate and the metallization region.Type: GrantFiled: April 18, 2013Date of Patent: October 21, 2014Assignee: Infineon Technologies Austria AGInventors: Carsten von Koblinski, Gerald Lackner, Karin Schrettlinger, Markus Ottowitz
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Publication number: 20140306327Abstract: A semiconductor device includes a device carrier and a semiconductor chip attached to the device carrier. Further, the semiconductor device includes a lid having a recess. The lid includes a semiconductor material and is attached to the device carrier such that the semiconductor chip is accommodated in the recess.Type: ApplicationFiled: April 13, 2013Publication date: October 16, 2014Applicant: Infineon Technologies AGInventors: Hans-Joachim SCHULZE, Johannes BAUMGARTL, Gerald LACKNER, Anton MAUDER, Francisco Javier SANTOS RODRIGUEZ
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Patent number: 8857805Abstract: Some embodiments discussed relates to an apparatus for holding a substrate, comprising a body with a surface for a semiconductor wafer to rest on, with the surface having a first surface area on which a first area of the semiconductor wafer can rest, and a second surface area on which a second area of the semiconductor wafer can rest, wherein the second surface area protrudes with respect to the first surface area.Type: GrantFiled: September 7, 2007Date of Patent: October 14, 2014Assignee: Infineon Technologies AGInventors: Gerald Lackner, Christian Maier, Francisco Javier Santos Rodriguez
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Patent number: 8822310Abstract: Some embodiments discussed relates to an apparatus for holding a substrate, comprising a body with a surface for a semiconductor wafer to rest on, with the surface having a first surface area on which a first area of the semiconductor wafer can rest, and a second surface area on which a second area of the semiconductor wafer can rest, wherein the second surface area protrudes with respect to the first surface area.Type: GrantFiled: February 22, 2013Date of Patent: September 2, 2014Assignee: Infineon Technologies AGInventors: Gerald Lackner, Christian Maier, Francisco Javier Santos Rodriguez
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Patent number: 8803312Abstract: A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass substrate is bonded to the first surface of the semiconductor wafer such that the metal pads are arranged within respective cavities or openings of the first glass substrate. The second surface of the semiconductor wafer is machined. At least one metallization region is formed on the machined second surface of the semiconductor wafer.Type: GrantFiled: August 14, 2013Date of Patent: August 12, 2014Assignee: Infineon Technologies Austria AGInventors: Carsten von Koblinski, Gerald Lackner, Karin Schrettlinger, Markus Ottowitz
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Publication number: 20130328183Abstract: A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass substrate is bonded to the first surface of the semiconductor wafer such that the metal pads are arranged within respective cavities or openings of the first glass substrate. The second surface of the semiconductor wafer is machined. At least one metallisation region is formed on the machined second surface of the semiconductor wafer.Type: ApplicationFiled: August 14, 2013Publication date: December 12, 2013Applicant: Infineon Technologies Austria AGInventors: Carsten von Koblinski, Gerald Lackner, Karin Schrettlinger, Markus Ottowitz
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Patent number: 8546934Abstract: A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass substrate is bonded to the first surface of the semiconductor wafer such that the metal pads are arranged within respective cavities or openings of the first glass substrate. The second surface of the semiconductor wafer is machined. At least one metallisation region is formed on the machined second surface of the semiconductor wafer.Type: GrantFiled: June 13, 2012Date of Patent: October 1, 2013Assignee: Infineon Technologies Austria AGInventors: Carsten Von Koblinski, Gerald Lackner, Karin Schrettlinger, Markus Ottowitz
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Publication number: 20130228905Abstract: A method for connecting a semiconductor chip to a metal layer of a carrier substrate is disclosed. A semiconductor chip is provided which has a first side, a second side opposite the first side, a glass substrate bonded to the second side of the semiconductor chip and including at least one opening leaving an area of the second side of the semiconductor chip uncovered by the glass substrate, and a metallisation region arranged in the opening of the glass substrate and electrically contacting the second side of the semiconductor chip. The semiconductor chip with the bonded glass substrate is brought onto a metal layer of a carrier substrate. A firm mechanical and electrical connection is formed between the metal layer of the carrier substrate and the metallisation region.Type: ApplicationFiled: April 18, 2013Publication date: September 5, 2013Applicant: Infineon Technologies Austria AGInventors: Carsten von Koblinski, Gerald Lackner, Karin Schrettlinger, Markus Ottowitz
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Publication number: 20120292757Abstract: In various embodiments, a semiconductor component may include a semiconductor layer having a front side and a back side; at least one electronic element formed at least partially in the semiconductor layer; at least one via formed in the semiconductor layer and leading from the front side to the back side of the semiconductor layer; a front side metallization layer disposed over the front side of the semiconductor layer and electrically connecting the at least one electronic element to the at least one via; a cap disposed over the front side of the semiconductor layer and mechanically coupled to the semiconductor layer, the cap being configured as a front side carrier of the semiconductor component; a back side metallization layer disposed over the back side of the semiconductor layer and electrically connected to the at least one via.Type: ApplicationFiled: May 17, 2011Publication date: November 22, 2012Applicant: INFINEON TECHNOLOGIES AGInventors: Anton MAUDER, Gerald LACKNER, Oliver HAEBERLEN
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Publication number: 20120248631Abstract: A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass substrate is bonded to the first surface of the semiconductor wafer such that the metal pads are arranged within respective cavities or openings of the first glass substrate. The second surface of the semiconductor wafer is machined. At least one metallisation region is formed on the machined second surface of the semiconductor wafer.Type: ApplicationFiled: June 13, 2012Publication date: October 4, 2012Applicant: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Carsten Von Koblinski, Gerald Lackner, Karin Schrettlinger, Markus Ottowitz
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Publication number: 20120225544Abstract: Exemplary embodiments of a method for producing a semiconductor component having a polycrystalline semiconductor body region are disclosed, wherein the polycrystalline semiconductor body region is produced between the first and second surfaces of the semiconductor body in a semiconductor component section, wherein an electromagnetic radiation having a wavelength of at least 1064 nm is introduced into the semiconductor body in a manner focused onto a position in the semiconductor component section of the semiconductor body and wherein the power density of the radiation at the position is less than 1×108 W/cm2.Type: ApplicationFiled: February 28, 2012Publication date: September 6, 2012Inventors: Manfred SCHNEEGANS, Carsten AHRENS, Adolf KOLLER, Gerald LACKNER, Anton MAUDER, Hans-Joachim SCHULZE
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Patent number: 8226144Abstract: A motor vehicle includes a body having an enclosed passenger cell which is accessible by a door and forms a component of a front body part and a rear body part. The front and rear parts are movable in length direction of the motor vehicle relative to one another to change a length dimension of the motor vehicle. A covering module covers a gap in the passenger cell between the front and rear body parts.Type: GrantFiled: June 25, 2010Date of Patent: July 24, 2012Assignee: Benteler Automobiltechnik GmbHInventors: Mohammad Hossein Sheikhha, Gerald Lackner, Frank Seifert
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Patent number: 8202786Abstract: A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass substrate is bonded to the first surface of the semiconductor wafer such that the metal pads are arranged within respective cavities or openings of the first glass substrate. The second surface of the semiconductor wafer is machined. At least one metallization region is formed on the machined second surface of the semiconductor wafer.Type: GrantFiled: July 15, 2010Date of Patent: June 19, 2012Assignee: Infineon Technologies Austria AGInventors: Carsten Von Koblinski, Gerald Lackner, Karin Schrettlinger, Markus Ottowitz
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Publication number: 20120012994Abstract: A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass substrate is bonded to the first surface of the semiconductor wafer such that the metal pads are arranged within respective cavities or openings of the first glass substrate. The second surface of the semiconductor wafer is machined. At least one metallisation region is formed on the machined second surface of the semiconductor wafer.Type: ApplicationFiled: July 15, 2010Publication date: January 19, 2012Applicant: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Carsten Von Koblinski, Gerald Lackner, Karin Schrettlinger, Markus Ottowitz
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Publication number: 20110169290Abstract: A motor vehicle includes a body having an enclosed passenger cell which is accessible by a door and forms a component of a front body part and a rear body part. The front and rear parts are movable in length direction of the motor vehicle relative to one another to change a length dimension of the motor vehicle. A covering module covers a gap in the passenger cell between the front and rear body parts.Type: ApplicationFiled: June 25, 2010Publication date: July 14, 2011Applicant: Benteler Automobiltechnik GmbHInventors: Mohammad Hossein Sheikhha, Gerald Lackner, Frank Seifert