Abstract: Embodiments of a microelectronic assembly comprise: a plurality of layers of IC dies, adjacent layers in the plurality of layers being coupled together by first interconnects and a package substrate coupled to the plurality of layers by second interconnects. A first layer in the plurality of layers comprises a dielectric material surrounding a first IC die in the first layer, a second layer in the plurality of layers is adjacent and non-coplanar with the first layer, the second layer comprises a first circuit region and a second circuit region separated by a third circuit region, the first circuit region and the second circuit region are bounded by respective guard rings, and the first IC die comprises conductive pathways conductively coupling conductive traces in the first circuit region with conductive traces in the second circuit region.

Abstract: Methods and apparatus relating to a Universal Chiplet Interconnect Express™ (UCIe™)-Three Dimensional (UCIe-3D™) interconnect which may be utilized as an on-package interconnect are described. In one embodiment, an interconnect communicatively couples a first physical layer module of a first chiplet on a semiconductor package to a second physical layer module of a second chiplet on the semiconductor package. A first Network-on-chip Controller (NoC) logic circuitry controls the first physical layer module. A second NoC logic circuitry controls the second physical layer module. Other embodiments are also claimed and disclosed.

Abstract: Embodiments of the present disclosure provide a microelectronic assembly comprising: a first integrated circuit (IC) die in a first layer; an interposer in a second layer not coplanar with the first layer, the first layer coupled to the second layer by interconnects having a pitch of less than 10 micrometers between adjacent interconnects; and a first conductive pathway and a second conductive pathway in the interposer coupling the first IC die and a second IC die. The first IC die is configured to transmit at a first supply voltage through the first conductive pathway to a second IC die, the second IC die is configured to transmit to the first IC die through the second conductive pathway at a second supply voltage simultaneously with the first die transmitting at the first supply voltage, and the first supply voltage is different from the second supply voltage.

Abstract: Embodiments of the present disclosure provide a microelectronic assembly comprising: a first integrated circuit (IC) die, the first IC die comprising an input/output (IO) circuit; and a plurality of IC dies, the plurality of IC dies comprising a second IC die, the second IC die comprising a microcontroller circuit to control the IO circuit, wherein the first IC die and the plurality of IC dies are coupled with interconnects having a pitch of less than 10 micrometers between adjacent ones of the interconnects.

Abstract: A microelectronic assembly is provided comprising: a first plurality of integrated circuit (IC) dies arranged in an array of rows and columns in a first layer; and a second plurality of IC dies in a second layer not coplanar with the first layer. A first IC die in the first plurality is differently sized than surrounding IC dies in the first plurality, and a second IC die in the second plurality coupled to the first IC die comprises at least one of: a repeater circuitry and a fanout structure in an electrical pathway coupling the first IC die with an adjacent IC die in the first plurality.

Abstract: A microelectronic assembly is provided, comprising: a first integrated circuit (IC) die having a first connection to a first serializer/deserializer (SERDES) circuit and a second connection to a second SERDES circuit; a second IC die having the first SERDES circuit; and a third IC die having the second SERDES circuit, in which the first IC die is in a first layer, the second IC die and the third IC die are in a second layer not coplanar with the first layer, the first layer and the second layer are coupled by interconnects having a pitch of less than 10 micrometers between adjacent ones of the interconnects, and the first SERDES circuit and the second SERDES circuit are coupled by a conductive pathway.

Abstract: A microelectronic assembly is provided comprising: a first plurality of integrated circuit (IC) dies in a first layer; a second plurality of IC dies in a second layer between the first layer and a third layer; and a third plurality of IC dies in the third layer. In some embodiments, the second plurality of IC dies comprises IC dies in an array of rows and columns, each IC die of the second plurality of IC dies is coupled to more than one IC die of the first plurality of IC dies, and the third plurality of IC dies is to provide electrical coupling between adjacent ones of the second plurality of IC dies.

Abstract: In embodiments, a semiconductor package may include a first die and a second die. The package may additionally include a serializer/deserializer (SerDes) die coupled with the first and the second dies. The SerDes die may be configured to serialize signals transmitted from the first die to the second die, and deserialize signals received from the second die. Other embodiments may be described and/or claimed.

Abstract: An Integrated Circuit (IC), comprising a first conductive trace on a first die, a second conductive trace on a second die, and a conductive pathway electrically coupling the first conductive trace with the second conductive trace. The second die is coupled to the first die with interconnects. The conductive pathway comprises a portion of the interconnects located proximate to a periphery of a region in the first die through which the first conductive trace is not routable. In some embodiments, the conductive pathway reroutes electrical connections away from the region. The region comprises a high congestion zone having high routing density in some embodiments. In other embodiments, the region comprises a “keep-out” zone.

Abstract: A die assembly comprising: a first component layer having conductive through-connections in an insulator, a second component layer comprising a die, and an active device layer (ADL) at an interface between the first component layer and the second component layer. The ADL comprises active elements electrically coupled to the first component layer and the second component layer. The die assembly further comprises a bonding layer electrically coupling the ADL to the second component layer. In some embodiments, the die assembly further comprises another ADL at another interface between the first component layer and a package support opposite to the interface. The first component layer may comprise another die having through-substrate vias (TSVs). The die and the another die may be fabricated using different process nodes.

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first microelectronic component, having a first surface and an opposing second surface including a first direct bonding region at the second surface with first metal contacts and a first dielectric material between adjacent ones of the first metal contacts; a second microelectronic component, having a first surface and an opposing second surface, including a second direct bonding region at the first surface with second metal contacts and a second dielectric material between adjacent ones of the second metal contacts, wherein the second microelectronic component is coupled to the first microelectronic component by the first and second direct bonding regions; and a shield structure in the first direct bonding dielectric material at least partially surrounding the one or more of the first metal contacts.

Abstract: Embodiments herein may relate to a semiconductor package or a semiconductor package structure. The package or package structure may include an interposer with a memory coupled to one side and a processing unit coupled to the other side. A third chip may be coupled with the interposer adjacent to the processing unit. Other embodiments may be described and/or claimed.

Abstract: Embodiments herein may relate to a processor package with a substrate and a multi-chip processor coupled with the substrate. The multi-chip processor may include a dual-sided interconnect structure coupled with a first chip, a second chip, and a third chip. The first chip may be communicatively coupled with the second chip by an on-chip communication route. Likewise, the second chip may be communicatively coupled with the first chip by an on-chip communication route. Additionally, the first chip may be communicatively coupled with the third chip by a fast-lane communication route. Other embodiments may be described and/or claimed.

Abstract: Disclosed herein are microelectronic assemblies including microelectronic components that are coupled together by direct bonding, as well as related structures and techniques. For example, in some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes at least part of an inductor.

Abstract: Disclosed herein are microelectronic assemblies including microelectronic components that are coupled together by direct bonding, as well as related structures and techniques. For example, in some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes at least part of an inductor.

Abstract: Disclosed herein are capacitors and resistors at direct bonding interfaces in microelectronic assemblies, as well as related structures and techniques. For example, in some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component, wherein a direct bonding interface of the second microelectronic component is direct bonded to a direct bonding interface of the first microelectronic component, the microelectronic assembly includes a sensor, the sensor includes a first sensor plate and a second sensor plate, the first sensor plate is at the direct bonding interface of the first microelectronic component, and the second sensor plate is at the direct bonding interface of the second microelectronic component.

Abstract: In one embodiment, an apparatus includes PHY circuitry to implement a PHY-based retry technique, e.g., in die-to-die interfaces. The PHY circuitry includes a retry buffer to buffer data provided by the interface controller and error detection code generation circuitry to generate error detection codes based on input data. The PHY circuitry is to implement the retry technique by detecting a stall signal asserted by another apparatus across the channel, causing the error detection code generation circuitry to generate error detection codes based on data in the retry buffer, and transmitting the data from the retry buffer and its corresponding error detection codes across the channel to the other apparatus.

Abstract: Physical layer logic is provided that is to receive data on one or more data lanes of a physical link, receive a valid signal on another of the lanes of the physical link identifying that valid data is to follow assertion of the valid signal on the one or more data lanes, and receive a stream signal on another of the lanes of the physical link identifying a type of the data on the one or more data lanes.

Abstract: Systems, methods, and apparatuses associated with an approximate majority based data bus inversion technique are disclosed. A method comprises obtaining, at a first device connected by a plurality of lanes to a second device, original data comprising first bits and second bits, where the first bits are to be transmitted in a new clock cycle via first lanes of the plurality of lanes, and the second bits are to be transmitted in the new clock cycle via second lanes of the plurality of lanes. The method further includes determining whether a first criterion associated with the first bits is met, determining whether a second criterion associated with the second bits is met, and transmitting an inverted version of the original data via the plurality of lanes based, at least in part, on determining that the first criterion and the second criterion are met.

Abstract: Physical layer logic is provided that is to receive data on one or more data lanes of a physical link, receive a valid signal on another of the lanes of the physical link identifying that valid data is to follow assertion of the valid signal on the one or more data lanes, and receive a stream signal on another of the lanes of the physical link identifying a type of the data on the one or more data lanes.