Abstract: An electronic device includes a first component carrier with a stack of at least one first electrically conductive layer structure and at least one first electrically insulating layer structure, and a second component carrier with a respective stack of at least one second electrically conductive layer structure and at least one second electrically insulating layer structure. The second component carrier is connected with the first component carrier so that a stacking direction of the first component carrier is angled with regard to a stacking direction of the second component carrier.

Abstract: Provided is an electronic assembly including (a) an interconnect carrier having an electrically insulating core and at least two electrically conducting layers formed at the electrically insulating core; (b) a first integrated circuit chip mounted at a first side of the interconnect carrier; (c) a second integrated circuit chip mounted at a second side of the interconnect carrier opposite to the first side; and (d) an interconnection structure electrically connecting the first integrated circuit chip with the second integrated circuit chip. The electric interconnection structure extends around the insulating core and includes at least one electric conductor path which is designed in such a manner that an impedance match between the first integrated circuit chip and the second integrated circuit chip is provided. Further, there is provided an electronic system comprising such an electronic assembly.

Abstract: An electric device includes a first structure, a second structure, and a deformed layer. The deformed layer includes a dielectric matrix and electrically conductive elements formed therein. The deformed layer is arranged to electrically couple the first structure with the second structure.

Abstract: A component carrier has an interconnected stack with at least one electrically insulating layer structure and/or at least one electrically conductive layer structure, a component embedded in the stack and a diode, and at least one heat removal layer configured for removing heat from the diode and substantially fully covering a whole main surface of the component carrier.

Abstract: A component carrier with a stack including a plurality of electrically conductive layer structures and/or electrically insulating layer structures, and a first transistor component and a second transistor component embedded side-by-side in the stack.

Abstract: A component carrier has an interconnected stack with at least one electrically insulating layer structure and/or at least one electrically conductive layer structure, a component embedded in the stack and a diode, and at least one heat removal layer configured for removing heat from the diode and substantially fully covering a whole main surface of the component carrier.

Abstract: In a connection system for electronic components (1) comprising a plurality of insulating layers (2) and conductive layers (3) and further comprising at least one embedded electronic component (4) embedded within at least one of the plurality of insulating layers (2) and conductive layers (3) the at least one embedded electronic component (4) is at least one first transistor having a bulk terminal thereof in thermal contact with a thermal duct (6) comprised of a plurality of vias (7) reaching through at least one of an insulating layer (2) and a conductive layer (3) of the connection system for electronic components (1) and emerging on a first outer surface (8) of the connection system for electronic components (1) under a first surface-mounted component (10).

Abstract: In a connection system for electronic components (1) comprising a plurality of insulating layers (2) and conductive layers (3) and further comprising at least one embedded electronic component (4) embedded within at least one of the plurality of insulating layers (2) and conductive layers (3) the at least one embedded electronic component (4) is at least one first transistor having a bulk terminal thereof in thermal contact with a thermal duct (6) comprised of a plurality of vias (7) reaching through at least one of an insulating layer (2) and a conductive layer (3) of the connection system for electronic components (1) and emerging on a first outer surface (8) of the connection system for electronic components (1) under a first surface-mounted component (10).

Abstract: The present invention relates to a method for producing semicrystalline polymer material, wherein the predominantly amorphous raw polymer material, in particular granules, to be treated is introduced into a crystallization reactor (1) and is partially crystallized there by being heated, but without melting, and subsequently the semicrystalline polymer material obtained in such a way is removed from the crystallization reactor (1) and at least part of said semicrystalline polymer material is diverted and mixed back into the crystallization reactor (1) in order to reduce the adhesive tendency of the polymer material. According to the invention, the diverted semicrystalline polymer material is combined and mixed with the raw polymer material before being mixed back into the crystallization reactor (1), and the mixture is then introduced into the crystallization reactor (1).

Abstract: The present invention relates to a method for producing semicrystalline polymer material, wherein the predominantly amorphous raw polymer material, in particular granules, to be treated is introduced into a crystallization reactor (1) and is partially crystallized there by being heated, but without melting, and subsequently the semicrystalline polymer material obtained in such a way is removed from the crystallization reactor (1) and at least part of said semicrystalline polymer material is diverted and mixed back into the crystallization reactor (1) in order to reduce the adhesive tendency of the polymer material. According to the invention, the diverted semicrystalline polymer material is combined and mixed with the raw polymer material before being mixed back into the crystallization reactor (1), and the mixture is then introduced into the crystallization reactor (1).