Patents by Inventor Gerard M. Schmid
Gerard M. Schmid has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8012395Abstract: Imprint lithography substrates may include alignment marks formed of high contrast material. Exemplary methods for forming alignment marks having high contrast material are described.Type: GrantFiled: May 12, 2009Date of Patent: September 6, 2011Assignee: Molecular Imprints, Inc.Inventors: Kosta S. Selinidis, Byung-Jin Choi, Gerard M. Schmid, Ecron D. Thompson, Ian Matthew McMackin
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Publication number: 20110183521Abstract: Polymerized material on a substrate may be removed by exposure to vacuum ultraviolet (VUV) radiation from an energy source within a gaseous atmosphere of a controlled composition. Following such removal, additional etching techniques are also described for nano-imprinting.Type: ApplicationFiled: January 26, 2011Publication date: July 28, 2011Applicant: MOLECULAR IMPRINTS, INC.Inventors: Gerard M. Schmid, Michael N. Miller, Byung-Jin Choi, Douglas J. Resnick, Sidlgata V. Sreenivasan, Frank Y. Xu, Darren D. Donaldson
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Patent number: 7985530Abstract: An enhanced process forming a material pattern on a substrate deposits the material anisotropically on resist material patterned to correspond to an image of the material pattern. The material is etched isotropically to remove a thickness of the material on sidewalls of the resist pattern while leaving the material on a top surface of the resist pattern and portions of the surface of the substrate. The resist pattern is removed by dissolution thereby lifting-off the material on the top surface of the resist pattern while leaving the material on the substrate surface as the material pattern. Alternately, a first material layer is deposited on the resist pattern and a second material layer is deposited and planarized. The second material layer is etched exposing the first material while leaving the second material in features of the resist pattern. The first material and the resist are removed leaving the first material pattern.Type: GrantFiled: September 18, 2007Date of Patent: July 26, 2011Assignee: Molecular Imprints, Inc.Inventors: Gerard M. Schmid, Douglas J. Resnick
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Patent number: 7906274Abstract: A method of forming a lithographic template, the method including, inter alia, creating a multi-layered structure, by forming, on a body, a conducting layer, and forming on the conducting layer, a patterned layer having protrusions and recessions, the recessions exposing portions of the conducting layer; depositing a hard mask material anisotropically on the multi-layered structure covering a top surface of the patterned layer and the portions of the conducting layer; removing the patterned layer by a lift-off process, with the hard mask material remaining on the portions of the conducting layer; positioning a resist pattern on the multi-layered structure to define a region of the multi-layered structure; and selectively removing portions of the multi-layered structure in superimposition with the region using the hard mask material as an etching mask.Type: GrantFiled: November 21, 2007Date of Patent: March 15, 2011Assignee: Molecular Imprints, Inc.Inventors: Gerard M. Schmid, Douglas J. Resnick, Michael N. Miller
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Publication number: 20100266965Abstract: An enhanced process forming a material pattern on a substrate deposits the material anisotropically on resist material patterned to correspond to an image of the material pattern. The material is etched isotropically to remove a thickness of the material on sidewalls of the resist pattern while leaving the material on a top surface of the resist pattern and portions of the surface of the substrate. The resist pattern is removed by dissolution thereby lifting-off the material on the top surface of the resist pattern while leaving the material on the substrate surface as the material pattern. Alternately, a first material layer is deposited on the resist pattern and a second material layer is deposited and planarized. The second material layer is etched exposing the first material while leaving the second material in features of the resist pattern. The first material and the resist are removed leaving the first material pattern.Type: ApplicationFiled: September 18, 2007Publication date: October 21, 2010Applicant: MOLECULAR IMPRINTS, INC.Inventors: Gerard M. Schmid, Douglas J. Resnick
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Publication number: 20100109194Abstract: Systems and methods for providing multiple replicas from a master template are described. Replicas may be formed having a mesa. In one embodiment, a dummy fill region may be included on master template and/or replicas.Type: ApplicationFiled: October 28, 2009Publication date: May 6, 2010Applicant: MOLECULAR IMPRINTS, INC.Inventors: Michael N. Miller, Cynthia B. Brooks, Laura Anne Brown, Gerard M. Schmid
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Publication number: 20100112310Abstract: Systems and methods for providing identification patterns on substrates are described.Type: ApplicationFiled: October 28, 2009Publication date: May 6, 2010Applicant: Molecular Imprints, Inc.Inventors: Van Nguyen Truskett, Gerard M. Schmid, Michael N. Miller, Douglas J. Resnick, Benjamin G. Eynon, JR., Byung-Jin Choi, Kosta S. Selinidis, Sidlgata V. Sreenivasan, Nicholas A. Stacey
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Publication number: 20100102029Abstract: Systems, methods, and processes for forming imprint lithography templates from a multi-layer substrate are described. The multi-layer substrate may include a block copolymer layer positioned on a substrate layer. The block copolymer layer may include two or more domains. At least one domain may have a different composition sensitivity than another domain such that the domains have different reactions to a specific process. Reaction of the domains to the specific process may provide a pattern in the block copolymer layer. The pattern may be transferred into the substrate layer to form the imprint lithography template.Type: ApplicationFiled: October 23, 2009Publication date: April 29, 2010Applicant: MOLECULAR IMPRINTS, INC.Inventors: Gerard M. Schmid, Douglas J. Resnick, Sidlgata V. Sreenivasan, Frank Y. Xu
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Publication number: 20100102469Abstract: Systems and methods for improving robust layer separation during the separation process of an imprint lithography process are described. Included are methods of matching strains between a substrate to be imprinted and the template, varying or modifying the forces applied to the template and/or the substrate during separation, or varying or modifying the kinetics of the separation process.Type: ApplicationFiled: October 23, 2009Publication date: April 29, 2010Applicant: MOLECULAR IMPRINTS, INC.Inventors: Niyaz Khusnatdinov, Frank Y. Xu, Mario Johannes Meissl, Michael N. Miller, Ecron D. Thompson, Gerard M. Schmid, Pawan Kumar Nimmakayala, Xiaoming Lu, Byung-Jin Choi
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Publication number: 20100092599Abstract: Systems and methods for minimizing overlay error during alignment of a template with a substrate are described. Templates generally include two distinct types of alignment marks: buried alignment marks and complementary alignment marks. Buried marks may be fabricated separately from the patterning surface, and the complementary marks may be fabricated in the same step as the patterning surface.Type: ApplicationFiled: October 8, 2009Publication date: April 15, 2010Applicant: MOLECULAR IMPRINTS, INC.Inventors: Kosta S. Selinidis, Gerard M. Schmid, Ecron D. Thompson, Ian Matthew McMackin, Douglas J. Resnick
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Publication number: 20100085555Abstract: Imprint lithography system may provide for an energy source for solidification of material positioned between a template and a substrate. Additionally, the energy source and/or an additional energy source may be used to clean contaminants from the template and/or the substrate.Type: ApplicationFiled: September 21, 2009Publication date: April 8, 2010Applicant: MOLECULAR IMPRINTS, INC.Inventors: Gerard M. Schmid, Ian Matthew McMackin, Byung-Jin Choi, Douglas J. Resnick
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Publication number: 20100078846Abstract: Particles may be present on substrates and/or templates during nano-lithographic imprinting. Particles may be mitigated and/or removed using localized removal techniques and/or imprinting techniques as described.Type: ApplicationFiled: September 29, 2009Publication date: April 1, 2010Applicant: MOLECULAR IMPRINTS, INC.Inventors: Douglas J. Resnick, Ian Matthew McMackin, Gerard M. Schmid, Niyaz Khusnatdinov, Ecron D. Thompson, Sidlgata V. Sreenivasan
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Publication number: 20100072671Abstract: A nano-imprint lithography template includes a rigid support layer, a cap layer, and a flexible cushion layer positioned between the support layer and the cap layer. Treating an imprint lithography template includes heating the template to desorb gases from the template. Heating the template includes radiating the template at a selected wavelength with, for example, infrared radiation. The selected wavelength may correspond to a wavelength at which the template material is strongly absorbing.Type: ApplicationFiled: September 25, 2009Publication date: March 25, 2010Applicant: MOLECULAR IMPRINTS, INC.Inventors: Gerard M. Schmid, Weijun Liu, Edward Brian Fletcher, Frank Y. Xu, Fen Wan
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Publication number: 20090250840Abstract: Imprint lithography substrates may include alignment marks formed of high contrast material. Exemplary methods for forming alignment marks having high contrast material are described.Type: ApplicationFiled: May 12, 2009Publication date: October 8, 2009Applicant: MOLECULAR IMPRINTS, INC.Inventors: Kosta S. Selinidis, Byung-Jin Choi, Gerard M. Schmid, Ecron D. Thompson, Ian Matthew McMackin
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Publication number: 20090200266Abstract: Materials for forming an imprint lithography template may be etched at different rates based on physical properties of the layers. Additionally, reflectance of the materials may be monitored to provide substantially uniform erosion of the materials.Type: ApplicationFiled: February 9, 2009Publication date: August 13, 2009Applicant: MOLECULAR IMPRINTS, INC.Inventors: Gary F. Doyle, Gerard M. Schmid, Michael N. Miller, Douglas J. Resnick, Dwayne L. LaBrake
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Patent number: 7547398Abstract: A process that enables coplanarization of the structures that have been created in multiple independent etch steps. The various etches are performed independently by selectively exposing only certain patterns to particular etching conditions. After these structures have been created, it is possible that the various structures will exist at different planes/elevations relative to the template surface. The elevations of the various structures may be adjusted independently by selectively exposing “higher” structures to an anisotropic etch that reduces the overall elevation of the structures, while preserving the structural topography.Type: GrantFiled: March 29, 2007Date of Patent: June 16, 2009Assignee: Molecular Imprints, Inc.Inventors: Gerard M. Schmid, Nicholas A Stacey, Douglas J. Resnick, Ronald D. Voisin, Lawrence J. Myron
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Publication number: 20090130598Abstract: A method of forming a lithographic template, the method including, inter alia, creating a multi-layered structure, by forming, on a body, a conducting layer, and forming on the conducting layer, a patterned layer having protrusions and recessions, the recessions exposing portions of the conducting layer; depositing a hard mask material anisotropically on the multi-layered structure covering a top surface of the patterned layer and the portions of the conducting layer; removing the patterned layer by a lift-off process, with the hard mask material remaining on the portions of the conducting layer; positioning a resist pattern on the multi-layered structure to define a region of the multi-layered structure; and selectively removing portions of the multi-layered structure in superimposition with the region using the hard mask material as an etching mask.Type: ApplicationFiled: November 21, 2007Publication date: May 21, 2009Applicant: MOLECULAR IMPRINTS, INC.Inventors: Gerard M. Schmid, Douglas J. Resnick, Michael N. Miller
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Publication number: 20070243655Abstract: A process that enables coplanarization of the structures that have been created in multiple independent etch steps. The various etches are performed independently by selectively exposing only certain patterns to particular etching conditions. After these structures have been created, it is possible that the various structures will exist at different planes/elevations relative to the template surface. The elevations of the various structures may be adjusted independently by selectively exposing “higher” structures to an anisotropic etch that reduces the overall elevation of the structures, while preserving the structural topography.Type: ApplicationFiled: March 29, 2007Publication date: October 18, 2007Applicant: MOLECULAR IMPRINTS, INC.Inventors: Gerard M. Schmid, Nicholas A. Stacey, Douglas J. Resnick, Ronald D. Voisin, Lawrence J. Myron