Abstract: In a replacement gate approach, one work function metal may be provided in an early manufacturing stage, i.e., upon depositing the gate layer stack, thereby reducing the number of deposition steps required in a later manufacturing stage. Consequently, the further work function metal and the electrode metal may be filled into the gate trenches on the basis of superior process conditions compared to conventional replacement gate approaches.

Abstract: By creating a temperature profile across a polishing pad, a respective temperature profile may be obtained in a substrate to be polished, which may result in a respective varying removal rate across the substrate for a chemically reactive slurry material or for an electro-chemically activated polishing process. Hence, highly sensitive materials, such as material comprising low-k dielectrics, may be efficiently polished with a high degree of controllability.

Abstract: Superior contact elements may be formed in semiconductor devices in which sophisticated replacement gate approaches may be applied. To this end, a dielectric cap layer is provided prior to patterning the interlayer dielectric material so that any previously created cracks may be reliably sealed prior to the deposition of the contact material, while the removal of any excess portion thereof may be performed without an undue interaction with the electrode metal of the gate electrode structures. Consequently, a significantly reduced defect rate may be achieved.

Abstract: In a polishing process, the characteristics of the removal process may be monitored at different lateral positions to identify the clearance of the various device regions with a high degree of reliability. Consequently, upon forming sophisticated metallization structures, undue over-polishing may be avoided while at the same time providing reduced leakage currents due to enhanced material removal.

Abstract: In a replacement gate approach, a top area of a gate opening may receive a superior cross-sectional shape after the deposition of a work function adjusting species on the basis of a polishing process, wherein a sacrificial material may protect the sensitive materials in the gate opening.

Abstract: Superior contact elements may be formed in semiconductor devices in which sophisticated replacement gate approaches may be applied. To this end, a dielectric cap layer is provided prior to patterning the interlayer dielectric material so that any previously created cracks may be reliably sealed prior to the deposition of the contact material, while the removal of any excess portion thereof may be performed without an undue interaction with the electrode metal of the gate electrode structures. Consequently, a significantly reduced defect rate may be achieved.

Abstract: In a replacement gate approach, one work function metal may be provided in an early manufacturing stage, i.e., upon depositing the gate layer stack, thereby reducing the number of deposition steps required in a later manufacturing stage. Consequently, the further work function metal and the electrode metal may be filled into the gate trenches on the basis of superior process conditions compared to conventional replacement gate approaches.

Abstract: By providing two or more consumable electrodes within a single reactor vessel, an alloy having a high degree of chemical ordering may be deposited in situ in that the current flows of the individual consumable electrodes are controlled to obtain a substantially layered deposition of the two or more metals. Hence, especially in copper-based metallization layers, the advantage of enhanced resistance against electromigration offered by alloys may be achieved without unduly reducing the overall conductivity.

Abstract: In a replacement gate approach, a top area of a gate opening may receive a superior cross-sectional shape after the deposition of a work function adjusting species on the basis of a polishing process, wherein a sacrificial material may protect the sensitive materials in the gate opening.

Abstract: A polishing head for a chemical mechanical polishing apparatus is provided which includes at least two polishing head zones configured to provide different temperatures for transferring heat to at least two zones of a substrate corresponding to the at least two polishing head zones. The present disclosure addresses chemical mechanical polishing which allows a control of the polishing profile even if slurries are used, which show almost no dependency between polishing rate and down force.

Abstract: In sophisticated CMP recipes, the material removal may be accomplished on the basis of a chemically reactive slurry material and a reduced down force, wherein the surface topography of a finally obtained material layer may be enhanced by using, at least in a final phase, a glazed state of the polishing pad.

Abstract: In a polishing process, the characteristics of the removal process may be monitored at different lateral positions to identify the clearance of the various device regions with a high degree of reliability. Consequently, upon forming sophisticated metallization structures, undue over-polishing may be avoided while at the same time providing reduced leakage currents due to enhanced material removal.

Abstract: By creating a temperature profile across a polishing pad, a respective temperature profile may be obtained in a substrate to be polished, which may result in a respective varying removal rate across the substrate for a chemically reactive slurry material or for an electro-chemically activated polishing process. Hence, highly sensitive materials, such as material comprising low-k dielectrics, may be efficiently polished with a high degree of controllability.

Abstract: A polishing head for a chemical mechanical polishing apparatus is provided which includes at least two polishing head zones configured to provide different temperatures for transferring heat to at least two zones of a substrate corresponding to the at least two polishing head zones. The present disclosure addresses chemical mechanical polishing which allows a control of the polishing profile even if slurries are used, which show almost no dependency between polishing rate and down force.

Abstract: A system for chemical mechanical polishing (CMP) is disclosed which includes a polishing apparatus for polishing a surface of a substrate and a sensor for determining zone-specific substrate data respectively related to at least two zones of the substrate. A controller is provided for generating, in response to the zone-specific substrate data, at least one set-point value, e.g., a set-point window of values for at least one operating parameter of the polishing apparatus in a subsequent CMP process. The set-point value/set-point window of values may be displayed on a display device or automatically taken into account by the controller for controlling subsequent CMP processes.

Abstract: A method and a controller for the chemical mechanical polishing (CMP) of substrates and, in particular, for the chemical mechanical polishing of metallization layers is disclosed. In a linear model of the CMP process, the erosion of the metallization layer to be treated is determined by the overpolish time and possibly by an extra polish time on a separate polishing platen for polishing the dielectric layer, wherein the CMP inherent characteristics are represented by sensitivity parameters derived empirically. Moreover, the control operation is designed so that even with a certain inaccuracy of the sensitivity parameters due to subtle process variations, a reasonable controller response is obtained.

Abstract: By providing two or more consumable electrodes within a single reactor vessel, an alloy having a high degree of chemical ordering may be deposited in situ in that the current flows of the individual consumable electrodes are controlled to obtain a substantially layered deposition of the two or more metals. Hence, especially in copper-based metallization layers, the advantage of enhanced resistance against electromigration offered by alloys may be achieved without unduly reducing the overall conductivity.

Abstract: The present invention provides a technique that enables the formation of a recessed upper surface of an interconnect line to form an inlaid barrier cap layer on top of an inter-connect line to exhibit improved characteristics with respect to electromigration, electrical conductivity, device reliability and performance. The recessed upper surface of the inter-connect line is formed by an accordingly adapted CMP process that allows removing the metal of an upper portion of the interconnect line, while neighboring elevated barrier layer regions are substantially not affected.

Abstract: In a system and a method according to the present invention, a sensor signal, such as a motor current signal, from a drive assembly of a pad conditioning system is used to control a CMP system to compensate for a change in the conditions of consumables, thereby enhancing process stability.

Abstract: In a new method of plating metal onto dielectric layers including small diameter vias and large diameter trenches, a surface roughness is created at least on non-patterned regions of the dielectric layer to enhance the uniformity of material removal in a subsequent chemical mechanical polishing (CMP) process.