Abstract: A bearing unit (1) for a suspension strut (2) of a motor vehicle (3), has at least the following components: a guide ring (4) having a guide axis (5) for a wheel spring (6); a cap (7) with a damper holder (8) for a damper block (9); a bumpstop holder (10) for a bumpstop (11); an axial bearing (12) with a bearing pitch circle (13) for supporting the guide ring (4) on the cap (7) and for low-friction rotation about the guide axis (5) relative to the cap (7). The bumpstop holder (10) is formed integrally by the cap (7).

Abstract: The invention concerns a radiation entry window (10) for a radiation detector (2), in particular for a semiconductor drift detector (2), with a flat window element (11), which is at least partially permeable for the radiation to be detected by the radiation detector (2), as well as with a window frame (12), which laterally frames the window element (11), wherein the window frame (12) consists of a semiconductor material and is considerably thicker than the window element (11). (FIG.

Abstract: The invention relates to a semiconductor drift detector for detecting radiation, comprising a semiconductor substrate (HS), in which signal charge carriers are generated during operation, to be precise by incident photons (h·f) having a specific photon energy, more particularly in the form of X-ray fluorescent radiation, and/or by incident electrons (?), having a specific signal charge carrier current, more particularly in the form of back-scattered electrons (?), and comprising a read-out anode (A) for generating an electrical output signal in a manner dependent on the signal charge carriers, and comprising an erase contact (RC) for erasing the signal charge carriers that have accumulated in the semiconductor substrate (HS).

Abstract: The invention relates to a semiconductor drift detector for detecting radiation, comprising a semiconductor substrate (HS), in which signal charge carriers are generated during operation, to be precise by incident photons (h·f) having a specific photon energy, more particularly in the form of X-ray fluorescent radiation, and/or by incident electrons (?), having a specific signal charge carrier current, more particularly in the form of back-scattered electrons (?), and comprising a read-out anode (A) for generating an electrical output signal in a manner dependent on the signal charge carriers, and comprising an erase contact (RC) for erasing the signal charge carriers that have accumulated in the semiconductor substrate (HS).

Abstract: The invention concerns a radiation entry window (10) for a radiation detector (2), in particular for a semiconductor drift detector (2), with a flat window element (11), which is at least partially permeable for the radiation to be detected by the radiation detector (2), as well as with a window frame (12), which laterally frames the window element (11), wherein the window frame (12) consists of a semiconductor material and is considerably thicker than the window element (11).

Abstract: The invention relates to a DEPFET transistor (1) for detecting a radio-generated signal charge (2) and for generating an electronic output signal in a manner dependent on the detected signal charge (2) according to a predetermined characteristic curve. The invention provides for the characteristic curve to have a degressive characteristic curve profile in order to combine a high measurement sensitivity in the case of small signal charges (2) with a large measurement range through to large signal charges (2).

Abstract: The invention relates to an avalanche photodiode (1) for detecting radiation, including a semiconductor substrate (11), an upper diode layer (15), an oppositely doped, laterally delimited lower diode layer (16), an avalanche region situated between the upper diode layer (15) and the lower diode layer (16), wherein the radiation to be detected triggers an avalanche breakdown in the avalanche region, and also including a contact-making layer (12) at the underside (10) of the semiconductor substrate (11), a laterally delimited quenching resistance layer (18) arranged in the semiconductor substrate (11) between the lower diode layer (16) and the contact-making layer (12), wherein the quenching resistance layer (18) quenches the radiation-generated avalanche breakdown in the avalanche region, and also including a depletion electrode (15) arranged laterally alongside the laterally delimited lower diode layer (16), such that the depletion electrode (15) depletes the semiconductor substrate (11) laterally alongside t

Abstract: The invention relates to an operating method for a semiconductor structure (1), particularly for a detecting element, in a semiconductor detector, particularly in a blocked impurity band detector, comprising the following steps: a) generating free signal charge carriers (2) in the semiconductor detector by impinging radiation, b) collecting the radiation-generated signal charge carriers (2) in a storage area (IG) in the semiconductor structure (1), wherein the storage area (IG) forms a potential well in which the signal charge carriers (2) are captured, c) deleting the signal charge carriers (2) collected in the storage area (IG) in IG that the signal charge carriers (2) are removed from the storage area (IG), d) generating an electric tunnel field in the area of the storage area (IG), so that the signal charge carriers (2) present in the storage area (IG) can tunnel out of the potential well of the storage area (IG) using the tunnel effect, into a conduction band in which the signal charge carriers (2) are f

Abstract: The invention relates to an avalanche photodiode (1) for detecting radiation, including a semiconductor substrate (11), an upper diode layer (15), an oppositely doped, laterally delimited lower diode layer (16), an avalanche region situated between the upper diode layer (15) and the lower diode layer (16), wherein the radiation to be detected triggers an avalanche breakdown in the avalanche region, and also including a contact-making layer (12) at the underside (10) of the semiconductor substrate (11), a laterally delimited quenching resistance layer (18) arranged in the semiconductor substrate (11) between the lower diode layer (16) and the contact-making layer (12), wherein the quenching resistance layer (18) quenches the radiation-generated avalanche breakdown in the avalanche region, and also including a depletion electrode (15) arranged laterally alongside the laterally delimited lower diode layer (16), such that the depletion electrode (15) depletes the semiconductor substrate (11) laterally alongside t

Abstract: The invention relates to a radiation detector (1) for detecting low-intensity radiation, especially for detecting individual photons. The radiation detector includes a plurality of rows of image cells (5) with respective pluralities of image cells (5) disposed one after the other and respective signal outputs (6). The radiation to be detected generates signal charge carriers in the individual image cells (5), the charge carriers being transported along the rows of image cells to the respective signal output (6). A plurality of output amplifiers (7) are connected in parallel to one of the signal outputs each of the individual image cell columns and amplify the signal charge carriers. The invention is characterized in that the output amplifiers (7) include respective avalanche amplifiers (8).

Abstract: The invention relates to a semiconductor detector, in particular a pnCCD detector, for radiation detection, including a guard ring (12, 14) and a readout anode (3, 4) arranged inside the guard ring (12, 14) for reading out radiation-generated signal charge carriers (e?), and also including a clearing contact (9) arranged outside the guard ring (12, 14) for removing the collected signal charge carriers (e?) from the readout anode (3, 4). According to the invention, the semiconductor detector furthermore includes a gap (15, 16) in the guard ring (12, 14) and also a controllable gate (17, 18) which is arranged over the gap (15, 16) in the guard ring (12, 14) and makes the gap (15, 16) in the guard ring (12, 14) permeable or impermeable to the signal charge carriers (e?) to be removed, depending on an electrical actuation of the gate (17, 18).

Abstract: The invention relates to a DEPFET transistor (1) for detecting a radio-generated signal charge (2) and for generating an electronic output signal in a manner dependent on the detected signal charge (2) according to a predetermined characteristic curve. The invention provides for the characteristic curve to have a degressive characteristic curve profile in order to combine a high measurement sensitivity in the case of small signal charges (2) with a large measurement range through to large signal charges (2).

Abstract: The invention relates to a semiconductor structure, especially for use in a semiconductor detector. The semiconductor structure includes a weakly doped semiconductor substrate (HK) of a first or second doping type, a highly doped drain region (D) of a second doping type, located on a first surface of the semiconductor substrate (HK), a highly doped source region (S) of the second doping type, located on the first surface of the semiconductor substrate (HK), a duct (K) extending between the source region (S) and the drain region (D), a doped inner gate region (IG) of the first doping type, which is at least partially located below the duct (K), and a blow-out contact (CL) for removing charge carriers from the inner gate region (IG). According to the invention, the inner gate region (IG) extends in the semiconductor substrate (HK) at least partially up to the blow-out contact (CL) and the blow-out contact (CL) is located on the drain end relative to the source region (S).

Abstract: Semiconductor detector includes semiconductor substrate (HK), source region (S), drain region (D), external gate region (G) and inner gate region (IG) for collecting free charge carriers generated in semiconductor substrate, wherein inner gate region is arranged in semiconductor substrate at least partially under external gate region to control conduction channel (K) from below as a function of the accumulated charge carriers, as well as with clear contact (CL) for the removal of the accumulated charge carriers from inner gate region, as well as with drain-clear region (DCG) that can be selectively controlled as an auxiliary clear contact or as a drain. Barrier contact (B) is arranged in a lateral direction between external gate region and drain-clear region to build up a controllable potential barrier between inner gate region and clear contact that prevents the charge carriers accumulated in inner gate region from being removed by suction from clear contact.

Abstract: The invention relates to a semiconductor detector, in particular a pnCCD detector, for radiation detection, including a guard ring (12, 14) and a readout anode (3, 4) arranged inside the guard ring (12, 14) for reading out radiation-generated signal charge carriers (e?), and also including a clearing contact (9) arranged outside the guard ring (12, 14) for removing the collected signal charge carriers (e?) from the readout anode (3, 4). According to the invention, the semiconductor detector furthermore includes a gap (15, 16) in the guard ring (12, 14) and also a controllable gate (17, 18) which is arranged over the gap (15, 16) in the guard ring (12, 14) and makes the gap (15, 16) in the guard ring (12, 14) permeable or impermeable to the signal charge carriers (e?) to be removed, depending on an electrical actuation of the gate (17, 18).

Abstract: The invention relates to a semiconductor structure, especially for use in a semiconductor detector. The semiconductor structure includes a weakly doped semiconductor substrate (HK) of a first or second doping type, a highly doped drain region (D) of a second doping type, located on a first surface of the semiconductor substrate (HK), a highly doped source region (S) of the second doping type, located on the first surface of the semiconductor substrate (HK), a duct (K) extending between the source region (S) and the drain region (D), a doped inner gate region (IG) of the first doping type, which is at least partially located below the duct (K), and a blow-out contact (CL) for removing charge carriers from the inner gate region (IG). According to the invention, the inner gate region (IG) extends in the semiconductor substrate (HK) at least partially up to the blow-out contact (CL) and the blow-out contact (CL) is located on the drain end relative to the source region (S).

Abstract: The invention relates to a radiation detector (1) for detecting low-intensity radiation, especially for detecting individual photons. The radiation detector includes a plurality of rows of image cells (5) with respective pluralities of image cells (5) disposed one after the other and respective signal outputs (6). The radiation to be detected generates signal charge carriers in the individual image cells (5), the charge carriers being transported along the rows of image cells to the respective signal output (6). A plurality of output amplifiers (7) are connected in parallel to one of the signal outputs each of the individual image cell columns and amplify the signal charge carriers. The invention is characterized in that the output amplifiers (7) include respective avalanche amplifiers (8).

Abstract: Semiconductor detector includes semiconductor substrate (HK), source region (S), drain region (D), external gate region (G) and inner gate region (IG) for collecting free charge carriers generated in semiconductor substrate, wherein inner gate region is arranged in semiconductor substrate at least partially under external gate region to control conduction channel (K) from below as a function of the accumulated charge carriers, as well as with clear contact (CL) for the removal of the accumulated charge carriers from inner gate region, as well as with drain-clear region (DCG) that can be selectively controlled as an auxiliary clear contact or as a drain. Barrier contact (B) is arranged in a lateral direction between external gate region and drain-clear region to build up a controllable potential barrier between inner gate region and clear contact that prevents the charge carriers accumulated in inner gate region from being removed by suction from clear contact.

Abstract: The invention relates to a conductor crossover for a semiconductor detector, particularly for a drift detector for conducting X-ray spectroscopy. The conductor crossover comprises at least two doped semiconductor electrodes (2), which are placed inside a semiconductor substrate (1), at least one connecting conductor (M), which is guided over the semiconductor electrodes (2), and a first insulating layer (Ox). An intermediate electrode (L) is situated between the connecting conductor (M) and the first insulation layer (Ox). Said intermediate electrode overlaps the area of the semiconductor substrate (1) between the semiconductor electrodes (2) and is electrically insulated from the connecting conductor (M) by at least one additional insulation layer (I). The invention also relates to a drift detector equipped with a conductor crossover of this type and to a detector arrangement for conducting X-ray spectroscopy.

Abstract: Described is a semiconductor detector for detecting electromagnetic radiation or particle radiation, comprising a semiconductor body (10) of a first conduction type, comprising first and second main surfaces; a group of drift electrodes comprising a second, opposite, conduction type, with said drift electrodes being arranged on the first main surface for generating at least one drift field in the semiconductor body (10); and a counterelectrode arrangement (30) which is arranged on the second main surface, which comprises the second conduction type and which forms a radiation entry window, wherein the counterelectrode arrangement (30) comprises a two-dimensional main electrode (31) and at least one barrier electrode (32) which are electrically insulated from each other, and wherein the barrier electrode (32), of which there is at least one, is connected to a voltage source (50) and is designed such that a blocking voltage is applied to it relative to the semiconductor body (10), with said blocking voltage exce