Abstract: The invention relates to an avalanche radiation detector comprising a semiconductor substrate (HK) with a front side (VS) and a back side (RS), an avalanche region (AB) which is arranged in the semiconductor substrate (HK) on the front side (VS) of the semiconductor substrate (HK) and a control electrode (R) for adjusting the electric field strength in the avalanche region (AB). It is proposed that the control electrode (R) is also arranged on the front side of the semiconductor substrate (HK).

Abstract: The invention relates to an avalanche radiation detector comprising a semiconductor substrate (HK) with a front side (VS) and a back side (RS), an avalanche region (AB) which is arranged in the semiconductor substrate (HK) on the front side (VS) of the semiconductor substrate (HK) and a control electrode (R) for adjusting the electric field strength in the avalanche region (AB). It is proposed that the control electrode (R) is also arranged on the front side of the semiconductor substrate (HK).

Abstract: The invention relates to a conductor crossover for a semiconductor detector, particularly for a drift detector for conducting X-ray spectroscopy. The conductor crossover comprises at least two doped semiconductor electrodes (2), which are placed inside a semiconductor substrate (1), at least one connecting conductor (M), which is guided over the semiconductor electrodes (2), and a first insulating layer (Ox). An intermediate electrode (L) is situated between the connecting conductor (M) and the first insulation layer (Ox). Said intermediate electrode overlaps the area of the semiconductor substrate (1) between the semiconductor electrodes (2) and is electrically insulated from the connecting conductor (M) by at least one additional insulation layer (I). The invention also relates to a drift detector equipped with a conductor crossover of this type and to a detector arrangement for conducting X-ray spectroscopy.

Abstract: Described is a semiconductor detector for detecting electromagnetic radiation or particle radiation, comprising a semiconductor body (10) of a first conduction type, comprising first and second main surfaces; a group of drift electrodes comprising a second, opposite, conduction type, with said drift electrodes being arranged on the first main surface for generating at least one drift field in the semiconductor body (10); and a counterelectrode arrangement (30) which is arranged on the second main surface, which comprises the second conduction type and which forms a radiation entry window, wherein the counterelectrode arrangement (30) comprises a two-dimensional main electrode (31) and at least one barrier electrode (32) which are electrically insulated from each other, and wherein the barrier electrode (32), of which there is at least one, is connected to a voltage source (50) and is designed such that a blocking voltage is applied to it relative to the semiconductor body (10), with said blocking voltage exce

Abstract: Solar lamp for outdoor use, in particular a garden lamp, road or street lamp or such, consisting of one or more solar module, and a housing with a storage means for electric energy (battery), which is electrically connected to the solar module, and one or more luminous body, whereby between the battery and the luminous body a circuit is provided, which reacts to signals from a light sensor attached to the solar lamp, and which enables or disables the electrical connection between the battery and the luminous body depending on the degree of brightness/darkness, whereby the housing is provided with two or more walls of different orientation which do not converge parallel to each other, and whereby one or more solar modules are arranged on each wall, or that the walls are formed by solar modules.

Abstract: Solar lamp for outdoor use, in particular a garden lamp, road or street lamp or such, consisting of one or more solar module, and a housing with a storage means for electric energy (battery), which is electrically connected to the solar module, and one or more luminous body, whereby between the battery and the luminous body a circuit is provided, which reacts to signals from a light sensor attached to the solar lamp, and which enables or disables the electrical connection between the battery and the luminous body depending on the degree of brightness/darkness, whereby the housing is provided with two or more walls of different orientation which do not converge parallel to each other, and whereby one or more solar modules are arranged on each wall, or that the walls are formed by solar modules.

Abstract: A strip detector for detecting ionizing particles and/or radiation, consisting of a silicon substrate which, at least on one substrate surface thereof, provides for n-doped zones spaced from each other as strips and voltage supply regions as well as a p-doped isolation zone between the n-doped zones, and including a first isolator layer as well as metal strips disposed above the n-doped zones, wherein immediately above the first isolated layer there is at least one further isolator layer provided and that at least one of the isolator layers is discontinuous in its projection above the intermediate zone of the two adjacent n-doped zones, and wherein the p-doped isolation zone presents a lateral distribution of concentration of the p-type doping material such that in the zone below the discontinuity of the discontinuous isolator layer, a higher concentration of doping material is present than in the isolation regions immediately adjacent to the n-doped zones.

Abstract: A semiconductor detector structure consists of a unipolar or single-pole nsistor disposed or arranged on a substantially depleted semiconductor body, with a drain, a source, a resetting contact, a top gate and a potentially floating layer forming at least one gate of the unipolar transistor, as well as at least one capacitor. The source is directly connected to the first electrode or electrodes of the capacitor or capacitors. The capacitor or the capacitors are integrated jointly with or into the semiconductor structure.

Abstract: In a semiconductor element having a semiconductor body, an electrode structure is arranged on at least one major surface of the element for storing charge carriers of at least one conductivity in cells formed by the electrode structure. Control electrodes which are at least partially enclosed in the semiconductor body are arranged in at least one plane essentially parallel to the major surface of the semiconductor body. The control electrodes similarly enable charge carriers to be stored in defined cells. The control electrodes stored also make it possible to shift stored charges from one cell to another, whereby at least two independent charge images can be stored in a three-dimensionally arranged storage cell pattern.

Abstract: A semiconductor radiation detector has an at least partially or even completely depleted base region of a first conductivity, to which a bias voltage is applied, and has at least one output or read-out electrode at which a signal is produced by the charge carriers generated by radiation incident on the detector. The read-out or output electrode includes a highly doped region of the first or a second conductivity, onto which an insulating layer and thereupon a conducting electrode layer are applied for outputting the generated or induced signals. The voltage application to the highly doped region of the read-out or output electrode is achieved through a high impedance through the base region of the detector, from at least one electrode of the same conductivity as that of the output or read-out electrode. Thus, it is simply possible to capacitively couple the detector to external circuitry even if these external circuits have a complex structure or arrangement.

Abstract: A semiconductor element with a basic region, to which a bias voltage is applied from at least one boundary surface and which completely depletes the basic region of majority carriers and produces a potential minimum in the basic region for the majoity carriers, in which the latter are collected and moved.On at least one side of the potential minimum, the quantity, movement direction and/or speed of the minority carriers is controlled by the course of the potential minimum.

Abstract: A description is given of a semiconductor detector with a low capacitance for detecting radiation and particles having a semiconductor body of a first conductivity type, to which is applied at least one collecting electrode for the majority carriers. Regions of a second conductivity type are provided on the two main surfaces of the semiconductor body and with the latter form depletion layers biased in such a way that the semiconductor body is substantially completely depleted of majority carriers and in the semiconductor body a potential gradient is present, through which flow to the collecting electrode the majority carriers produced by the radiation.

Abstract: In an electrical plug connection comprising two matching elements which can be detached at any time, in order to avoid the difficulties of pushing one element on to the other during the assembly of a piece of equipment and the uncertain contact pressure which results by doing so, the matching elements are connected to form a plug unit, which can later be detached, as part of the manufacturing operation thereby insuring good alignment when they are pushed together and guaranteeing proper contact pressure.

Abstract: A supporting bolt structure for connecting the ends of steps of a fabricated stairway including an elongated middle part having both internal and external threads at the ends thereof, a pair of internally threaded retainers mating with the external threads on the middle part and a pair of externally threaded headed portions mating with the internal threads of the middle part.