Patents by Inventor Gerhard Metzger-Brueckl
Gerhard Metzger-Brueckl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11576259Abstract: A carrier configured to be attached to a semiconductor substrate via a first surface comprises a continuous carbon structure defining a first surface of the carrier, and a reinforcing material constituting at least 2 vol-% of the carrier.Type: GrantFiled: August 23, 2019Date of Patent: February 7, 2023Assignee: Infineon Technologies AGInventors: Hans-Joachim Schulze, Andre Brockmeier, Tobias Franz Wolfgang Hoechbauer, Gerhard Metzger-Brueckl, Matteo Piccin, Francisco Javier Santos Rodriguez
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Patent number: 11557505Abstract: A method for manufacturing a semiconductor device includes implanting gas ions in a donor wafer and bonding the donor wafer to a carrier wafer to form a compound wafer. The method also includes subjecting the compound wafer to a thermal treatment to cause separation along a delamination layer and growing an epitaxial layer on a portion of separated compound wafer to form a semiconductor device layer. The method further includes cutting the carrier wafer.Type: GrantFiled: September 22, 2020Date of Patent: January 17, 2023Assignee: Infineon Technologies AGInventors: Wolfgang Lehnert, Rudolf Berger, Rudolf Lehner, Gerhard Metzger-Brueckl, Guenther Ruhl
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Patent number: 11161735Abstract: A production method for a double-membrane MEMS component includes: providing a layer arrangement on a carrier substrate, wherein the layer arrangement comprises a first membrane structure, a sacrificial material layer adjoining the first membrane structure, and a counterelectrode structure in the sacrificial material layer and at a distance from the first membrane structure, wherein at least one through opening is formed in the sacrificial material layer as far as the first membrane structure; forming a filling material structure in the at least one through opening by applying a first filling material layer on the wall region of the at least one through opening; applying a second membrane structure on the layer arrangement with the sacrificial material; and removing the sacrificial material from an intermediate region to expose the filling material structure in the intermediate region.Type: GrantFiled: April 16, 2020Date of Patent: November 2, 2021Assignee: INFINEON TECHNOLOGIES AGInventors: Johann Strasser, Alfons Dehe, Gerhard Metzger-Brueckl, Juergen Wagner, Arnaud Walther
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Patent number: 10913656Abstract: A method for sealing an access opening to a cavity comprises the following steps: providing a layer arrangement having a first layer structure and a cavity arranged adjacent to the first layer structure, wherein the first layer structure has an access opening to the cavity, performing a CVD layer deposition for forming a first covering layer having a layer thickness on the first layer structure having the access opening, and performing an HDP layer deposition with a first and second substep for forming a second covering layer on the first covering layer, wherein the first substep comprises depositing a liner material layer on the first covering layer, wherein the second substep comprises partly backsputtering the liner material layer and furthermore the first covering layer in the region of the access opening, and wherein the first and second substeps are carried out alternately and repeatedly a number of times.Type: GrantFiled: October 16, 2018Date of Patent: February 9, 2021Assignee: Infineon Technologies AGInventors: Gerhard Metzger-Brueckl, Alfons Dehe, Uwe Hoeckele, Johann Strasser, Arnaud Walther
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Publication number: 20210013090Abstract: A method for manufacturing a semiconductor device includes implanting gas ions in a donor wafer and bonding the donor wafer to a carrier wafer to form a compound wafer. The method also includes subjecting the compound wafer to a thermal treatment to cause separation along a delamination layer and growing an epitaxial layer on a portion of separated compound wafer to form a semiconductor device layer. The method further includes cutting the carrier wafer.Type: ApplicationFiled: September 22, 2020Publication date: January 14, 2021Inventors: Wolfgang Lehnert, Rudolf Berger, Rudolf Lehner, Gerhard Metzger-Brueckl, Guenther Ruhl
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Patent number: 10784145Abstract: A wafer composite is provided which includes an auxiliary substrate, a donor substrate and a sacrificial layer formed between the auxiliary substrate and the donor substrate. Functional elements of the semiconductor component are formed in a component layer, including at least one partial layer of the donor substrate. The auxiliary substrate is then separated from the component layer by heat input into the sacrificial layer.Type: GrantFiled: January 31, 2019Date of Patent: September 22, 2020Assignee: Infineon Technologies AGInventors: Rudolf Berger, Wolfgang Lehnert, Gerhard Metzger-Brueckl, Guenther Ruhl, Roland Rupp
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Publication number: 20200239302Abstract: A production method for a double-membrane MEMS component includes: providing a layer arrangement on a carrier substrate, wherein the layer arrangement comprises a first membrane structure, a sacrificial material layer adjoining the first membrane structure, and a counterelectrode structure in the sacrificial material layer and at a distance from the first membrane structure, wherein at least one through opening is formed in the sacrificial material layer as far as the first membrane structure; forming a filling material structure in the at least one through opening by applying a first filling material layer on the wall region of the at least one through opening; applying a second membrane structure on the layer arrangement with the sacrificial material; and removing the sacrificial material from an intermediate region to expose the filling material structure in the intermediate region.Type: ApplicationFiled: April 16, 2020Publication date: July 30, 2020Inventors: Johann Strasser, Alfons Dehe, Gerhard Metzger-Brueckl, Juergen Wagner, Arnaud Walther
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Patent number: 10676346Abstract: A production method for a MEMS component includes providing a layer arrangement on a carrier substrate, where the layer arrangement includes a first and second layer structure. A sacrificial material is arranged in an intermediate region between the first and second layer structures, an etch stop structure extending between the first and second layer structures subdivides the intermediate region into an exposure region and an edge region laterally adjoining the exposure region, and at least one of the first layer structure or the second layer structure has access openings to the exposure region. The method further includes removing the sacrificial material from the exposure region through the access openings using an etching process to expose the exposure region. The etch stop structure provides a lateral delimitation for the etching process, and the sacrificial material present in the edge region provides a mechanical connection between the first and second layer structures.Type: GrantFiled: September 20, 2018Date of Patent: June 9, 2020Assignee: INFINEON TECHNOLOGIES AGInventors: Arnaud Walther, Alfons Dehe, Gerhard Metzger-Brueckl, Johann Strasser
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Patent number: 10669151Abstract: A production method for a double-membrane MEMS component includes: providing a layer arrangement on a carrier substrate, wherein the layer arrangement comprises a first membrane structure, a sacrificial material layer adjoining the first membrane structure, and a counterelectrode structure in the sacrificial material layer and at a distance from the first membrane structure, wherein at least one through opening is formed in the sacrificial material layer as far as the first membrane structure; forming a filling material structure in the at least one through opening by applying a first filling material layer on the wall region of the at least one through opening; applying a second membrane structure on the layer arrangement with the sacrificial material; and removing the sacrificial material from an intermediate region to expose the filling material structure in the intermediate region.Type: GrantFiled: August 30, 2018Date of Patent: June 2, 2020Assignee: INFINEON TECHNOLOGIES AGInventors: Johann Strasser, Alfons Dehe, Gerhard Metzger-Brueckl, Juergen Wagner, Arnaud Walther
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Patent number: 10651072Abstract: This application relates to a method for producing a semiconductor component, in which a wafer composite is provided. The wafer composite includes a donor substrate, an auxiliary substrate and a separation layer arranged between the auxiliary substrate and the donor substrate. The separation layer has a support structure and sacrificial material, which is formed laterally between elements of the support structure. The auxiliary substrate is separated from the donor substrate. The separation includes a selective removal of the sacrificial material in relation to the support structure.Type: GrantFiled: January 31, 2019Date of Patent: May 12, 2020Assignee: Infineon Technologies AGInventors: Rudolf Berger, Wolfgang Lehnert, Gerhard Metzger-Brueckl, Guenther Ruhl, Roland Rupp
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Patent number: 10589990Abstract: In accordance with an embodiment, a MEMS microphone includes a sound detection unit having a first membrane, a second membrane arranged at a distance from the first membrane, a low-pressure region arranged between the first membrane and the second membrane, a gas pressure that is reduced in relation to normal pressure being present in said low-pressure region, a counter electrode arranged in the low-pressure region, and a sound through-hole, which extends through the sound detection unit in a thickness direction of the sound detection unit; and a valve provided at the sound through-hole, said valve being configured to adopt a plurality of valve states, wherein a predetermined degree of transmission of the sound through-hole to sound is assigned to each valve state.Type: GrantFiled: September 18, 2018Date of Patent: March 17, 2020Assignee: INFINEON TECHNOLOGIES AGInventors: Alfons Dehe, Ulrich Krumbein, Gerhard Metzger-Brueckl, Johann Strasser, Juergen Wagner, Arnaud Walther
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Publication number: 20200068709Abstract: A carrier configured to be attached to a semiconductor substrate via a first surface comprises a continuous carbon structure defining a first surface of the carrier, and a reinforcing material constituting at least 2 vol-% of the carrier.Type: ApplicationFiled: August 23, 2019Publication date: February 27, 2020Inventors: Hans-Joachim SCHULZE, Andre BROCKMEIER, Tobias Franz Wolfgang HOECHBAUER, Gerhard METZGER-BRUECKL, Matteo PICCIN, Francisco Javier SANTOS RODRIGUEZ
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Patent number: 10575101Abstract: A microelectromechanical microphone includes a reference electrode, a first membrane arranged on a first side of the reference electrode and displaceable by sound to be detected, and a second membrane arranged on a second side of the reference electrode, said second side being situated opposite the first side of the reference electrode, and displaceable by sound to be detected. A region of one from the first and second membranes that is displaceable by sound relative to the reference electrode, independently of said region's position relative to the reference electrode, can comprise a planar section and also an undulatory section adjoining the planar section and arranged in a region of overlap one of the first membrane or the second membrane with the other one of the first membrane and or the second membrane.Type: GrantFiled: February 15, 2018Date of Patent: February 25, 2020Assignee: INFINEON TECHNOLOGIES AGInventors: Arnaud Walther, Alfons Dehe, Gerhard Metzger-Brueckl, Johann Strasser, Carsten Ahrens
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Patent number: 10560771Abstract: In accordance with an embodiment, microelectromechanical microphone includes a holder and a sound detection unit carried on the holder. The sound detection unit includes a planar first membrane, a planar second membrane arranged at a distance from the first membrane, a low-pressure chamber formed between the first membrane and the second membrane, a reduced gas pressure relative to normal pressure being present in the low-pressure chamber, a reference electrode arranged at least in sections in the low-pressure chamber, where the first and second membranes are displaceable relative to the reference electrode by sound waves to be detected, the reference electrode includes a planar base section and a stiffening structure provided on the base section, and the stiffening structure is provided on a side of the base section that faces the first membrane or/and on a side of the base section that faces the second membrane.Type: GrantFiled: August 1, 2018Date of Patent: February 11, 2020Assignee: Infineon Technologies AGInventors: Alfons Dehe, Gerhard Metzger-Brueckl, Johann Strasser, Arnaud Walther, Andreas Wiesbauer
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Publication number: 20190244850Abstract: This application relates to a method for producing a semiconductor component, in which a wafer composite is provided. The wafer composite includes a donor substrate, an auxiliary substrate and a separation layer arranged between the auxiliary substrate and the donor substrate. The separation layer has a support structure and sacrificial material, which is formed laterally between elements of the support structure. The auxiliary substrate is separated from the donor substrate. The separation includes a selective removal of the sacrificial material in relation to the support structure.Type: ApplicationFiled: January 31, 2019Publication date: August 8, 2019Inventors: Rudolf Berger, Wolfgang Lehnert, Gerhard Metzger-Brueckl, Guenther Ruhl, Roland Rupp
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Publication number: 20190244853Abstract: A wafer composite is provided which includes an auxiliary substrate, a donor substrate and a sacrificial layer formed between the auxiliary substrate and the donor substrate. Functional elements of the semiconductor component are formed in a component layer, including at least one partial layer of the donor substrate. The auxiliary substrate is then separated from the component layer by heat input into the sacrificial layer.Type: ApplicationFiled: January 31, 2019Publication date: August 8, 2019Inventors: Rudolf Berger, Wolfgang Lehnert, Gerhard Metzger-Brueckl, Guenther Ruhl, Roland Rupp
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Publication number: 20190112182Abstract: A method for sealing an access opening to a cavity comprises the following steps: providing a layer arrangement having a first layer structure and a cavity arranged adjacent to the first layer structure, wherein the first layer structure has an access opening to the cavity, performing a CVD layer deposition for forming a first covering layer having a layer thickness on the first layer structure having the access opening, and performing an HDP layer deposition with a first and second substep for forming a second covering layer on the first covering layer, wherein the first substep comprises depositing a liner material layer on the first covering layer, wherein the second substep comprises partly backsputtering the liner material layer and furthermore the first covering layer in the region of the access opening, and wherein the first and second substeps are carried out alternately and repeatedly a number of times.Type: ApplicationFiled: October 16, 2018Publication date: April 18, 2019Inventors: Gerhard Metzger-Brueckl, Alfons Dehe, Uwe Hoeckele, Johann Strasser, Arnaud Walther
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Publication number: 20190092624Abstract: A production method for a MEMS component includes providing a layer arrangement on a carrier substrate, where the layer arrangement includes a first and second layer structure. A sacrificial material is arranged in an intermediate region between the first and second layer structures, an etch stop structure extending between the first and second layer structures subdivides the intermediate region into an exposure region and an edge region laterally adjoining the exposure region, and at least one of the first layer structure or the second layer structure has access openings to the exposure region. The method further includes removing the sacrificial material from the exposure region through the access openings using an etching process to expose the exposure region. The etch stop structure provides a lateral delimitation for the etching process, and the sacrificial material present in the edge region provides a mechanical connection between the first and second layer structures.Type: ApplicationFiled: September 20, 2018Publication date: March 28, 2019Inventors: Arnaud Walther, Alfons Dehe, Gerhard Metzger-Brueckl, Johann Strasser
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Publication number: 20190084827Abstract: In accordance with an embodiment, a MEMS microphone includes a sound detection unit having a first membrane, a second membrane arranged at a distance from the first membrane, a low-pressure region arranged between the first membrane and the second membrane, a gas pressure that is reduced in relation to normal pressure being present in said low-pressure region, a counter electrode arranged in the low-pressure region, and a sound through-hole, which extends through the sound detection unit in a thickness direction of the sound detection unit; and a valve provided at the sound through-hole, said valve being configured to adopt a plurality of valve states, wherein a predetermined degree of transmission of the sound through-hole to sound is assigned to each valve stateType: ApplicationFiled: September 18, 2018Publication date: March 21, 2019Inventors: Alfons Dehe, Ulrich Krumbein, Gerhard Metzger-Brueckl, Johann Strasser, Juergen Wagner, Arnaud Walther
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Publication number: 20190071305Abstract: A production method for a double-membrane MEMS component includes: providing a layer arrangement on a carrier substrate, wherein the layer arrangement comprises a first membrane structure, a sacrificial material layer adjoining the first membrane structure, and a counterelectrode structure in the sacrificial material layer and at a distance from the first membrane structure, wherein at least one through opening is formed in the sacrificial material layer as far as the first membrane structure; forming a filling material structure in the at least one through opening by applying a first filling material layer on the wall region of the at least one through opening; applying a second membrane structure on the layer arrangement with the sacrificial material; and removing the sacrificial material from an intermediate region to expose the filling material structure in the intermediate region.Type: ApplicationFiled: August 30, 2018Publication date: March 7, 2019Inventors: Johann Strasser, Alfons Dehe, Gerhard Metzger-Brueckl, Juergen Wagner, Arnaud Walther