Patents by Inventor Gerhard Metzger-Brueckl

Gerhard Metzger-Brueckl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11557505
    Abstract: A method for manufacturing a semiconductor device includes implanting gas ions in a donor wafer and bonding the donor wafer to a carrier wafer to form a compound wafer. The method also includes subjecting the compound wafer to a thermal treatment to cause separation along a delamination layer and growing an epitaxial layer on a portion of separated compound wafer to form a semiconductor device layer. The method further includes cutting the carrier wafer.
    Type: Grant
    Filed: September 22, 2020
    Date of Patent: January 17, 2023
    Assignee: Infineon Technologies AG
    Inventors: Wolfgang Lehnert, Rudolf Berger, Rudolf Lehner, Gerhard Metzger-Brueckl, Guenther Ruhl
  • Patent number: 11161735
    Abstract: A production method for a double-membrane MEMS component includes: providing a layer arrangement on a carrier substrate, wherein the layer arrangement comprises a first membrane structure, a sacrificial material layer adjoining the first membrane structure, and a counterelectrode structure in the sacrificial material layer and at a distance from the first membrane structure, wherein at least one through opening is formed in the sacrificial material layer as far as the first membrane structure; forming a filling material structure in the at least one through opening by applying a first filling material layer on the wall region of the at least one through opening; applying a second membrane structure on the layer arrangement with the sacrificial material; and removing the sacrificial material from an intermediate region to expose the filling material structure in the intermediate region.
    Type: Grant
    Filed: April 16, 2020
    Date of Patent: November 2, 2021
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Johann Strasser, Alfons Dehe, Gerhard Metzger-Brueckl, Juergen Wagner, Arnaud Walther
  • Patent number: 10913656
    Abstract: A method for sealing an access opening to a cavity comprises the following steps: providing a layer arrangement having a first layer structure and a cavity arranged adjacent to the first layer structure, wherein the first layer structure has an access opening to the cavity, performing a CVD layer deposition for forming a first covering layer having a layer thickness on the first layer structure having the access opening, and performing an HDP layer deposition with a first and second substep for forming a second covering layer on the first covering layer, wherein the first substep comprises depositing a liner material layer on the first covering layer, wherein the second substep comprises partly backsputtering the liner material layer and furthermore the first covering layer in the region of the access opening, and wherein the first and second substeps are carried out alternately and repeatedly a number of times.
    Type: Grant
    Filed: October 16, 2018
    Date of Patent: February 9, 2021
    Assignee: Infineon Technologies AG
    Inventors: Gerhard Metzger-Brueckl, Alfons Dehe, Uwe Hoeckele, Johann Strasser, Arnaud Walther
  • Publication number: 20210013090
    Abstract: A method for manufacturing a semiconductor device includes implanting gas ions in a donor wafer and bonding the donor wafer to a carrier wafer to form a compound wafer. The method also includes subjecting the compound wafer to a thermal treatment to cause separation along a delamination layer and growing an epitaxial layer on a portion of separated compound wafer to form a semiconductor device layer. The method further includes cutting the carrier wafer.
    Type: Application
    Filed: September 22, 2020
    Publication date: January 14, 2021
    Inventors: Wolfgang Lehnert, Rudolf Berger, Rudolf Lehner, Gerhard Metzger-Brueckl, Guenther Ruhl
  • Patent number: 10784145
    Abstract: A wafer composite is provided which includes an auxiliary substrate, a donor substrate and a sacrificial layer formed between the auxiliary substrate and the donor substrate. Functional elements of the semiconductor component are formed in a component layer, including at least one partial layer of the donor substrate. The auxiliary substrate is then separated from the component layer by heat input into the sacrificial layer.
    Type: Grant
    Filed: January 31, 2019
    Date of Patent: September 22, 2020
    Assignee: Infineon Technologies AG
    Inventors: Rudolf Berger, Wolfgang Lehnert, Gerhard Metzger-Brueckl, Guenther Ruhl, Roland Rupp
  • Publication number: 20200239302
    Abstract: A production method for a double-membrane MEMS component includes: providing a layer arrangement on a carrier substrate, wherein the layer arrangement comprises a first membrane structure, a sacrificial material layer adjoining the first membrane structure, and a counterelectrode structure in the sacrificial material layer and at a distance from the first membrane structure, wherein at least one through opening is formed in the sacrificial material layer as far as the first membrane structure; forming a filling material structure in the at least one through opening by applying a first filling material layer on the wall region of the at least one through opening; applying a second membrane structure on the layer arrangement with the sacrificial material; and removing the sacrificial material from an intermediate region to expose the filling material structure in the intermediate region.
    Type: Application
    Filed: April 16, 2020
    Publication date: July 30, 2020
    Inventors: Johann Strasser, Alfons Dehe, Gerhard Metzger-Brueckl, Juergen Wagner, Arnaud Walther
  • Patent number: 10676346
    Abstract: A production method for a MEMS component includes providing a layer arrangement on a carrier substrate, where the layer arrangement includes a first and second layer structure. A sacrificial material is arranged in an intermediate region between the first and second layer structures, an etch stop structure extending between the first and second layer structures subdivides the intermediate region into an exposure region and an edge region laterally adjoining the exposure region, and at least one of the first layer structure or the second layer structure has access openings to the exposure region. The method further includes removing the sacrificial material from the exposure region through the access openings using an etching process to expose the exposure region. The etch stop structure provides a lateral delimitation for the etching process, and the sacrificial material present in the edge region provides a mechanical connection between the first and second layer structures.
    Type: Grant
    Filed: September 20, 2018
    Date of Patent: June 9, 2020
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Arnaud Walther, Alfons Dehe, Gerhard Metzger-Brueckl, Johann Strasser
  • Patent number: 10669151
    Abstract: A production method for a double-membrane MEMS component includes: providing a layer arrangement on a carrier substrate, wherein the layer arrangement comprises a first membrane structure, a sacrificial material layer adjoining the first membrane structure, and a counterelectrode structure in the sacrificial material layer and at a distance from the first membrane structure, wherein at least one through opening is formed in the sacrificial material layer as far as the first membrane structure; forming a filling material structure in the at least one through opening by applying a first filling material layer on the wall region of the at least one through opening; applying a second membrane structure on the layer arrangement with the sacrificial material; and removing the sacrificial material from an intermediate region to expose the filling material structure in the intermediate region.
    Type: Grant
    Filed: August 30, 2018
    Date of Patent: June 2, 2020
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Johann Strasser, Alfons Dehe, Gerhard Metzger-Brueckl, Juergen Wagner, Arnaud Walther
  • Patent number: 10651072
    Abstract: This application relates to a method for producing a semiconductor component, in which a wafer composite is provided. The wafer composite includes a donor substrate, an auxiliary substrate and a separation layer arranged between the auxiliary substrate and the donor substrate. The separation layer has a support structure and sacrificial material, which is formed laterally between elements of the support structure. The auxiliary substrate is separated from the donor substrate. The separation includes a selective removal of the sacrificial material in relation to the support structure.
    Type: Grant
    Filed: January 31, 2019
    Date of Patent: May 12, 2020
    Assignee: Infineon Technologies AG
    Inventors: Rudolf Berger, Wolfgang Lehnert, Gerhard Metzger-Brueckl, Guenther Ruhl, Roland Rupp
  • Patent number: 10589990
    Abstract: In accordance with an embodiment, a MEMS microphone includes a sound detection unit having a first membrane, a second membrane arranged at a distance from the first membrane, a low-pressure region arranged between the first membrane and the second membrane, a gas pressure that is reduced in relation to normal pressure being present in said low-pressure region, a counter electrode arranged in the low-pressure region, and a sound through-hole, which extends through the sound detection unit in a thickness direction of the sound detection unit; and a valve provided at the sound through-hole, said valve being configured to adopt a plurality of valve states, wherein a predetermined degree of transmission of the sound through-hole to sound is assigned to each valve state.
    Type: Grant
    Filed: September 18, 2018
    Date of Patent: March 17, 2020
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Alfons Dehe, Ulrich Krumbein, Gerhard Metzger-Brueckl, Johann Strasser, Juergen Wagner, Arnaud Walther
  • Publication number: 20200068709
    Abstract: A carrier configured to be attached to a semiconductor substrate via a first surface comprises a continuous carbon structure defining a first surface of the carrier, and a reinforcing material constituting at least 2 vol-% of the carrier.
    Type: Application
    Filed: August 23, 2019
    Publication date: February 27, 2020
    Inventors: Hans-Joachim SCHULZE, Andre BROCKMEIER, Tobias Franz Wolfgang HOECHBAUER, Gerhard METZGER-BRUECKL, Matteo PICCIN, Francisco Javier SANTOS RODRIGUEZ
  • Patent number: 10575101
    Abstract: A microelectromechanical microphone includes a reference electrode, a first membrane arranged on a first side of the reference electrode and displaceable by sound to be detected, and a second membrane arranged on a second side of the reference electrode, said second side being situated opposite the first side of the reference electrode, and displaceable by sound to be detected. A region of one from the first and second membranes that is displaceable by sound relative to the reference electrode, independently of said region's position relative to the reference electrode, can comprise a planar section and also an undulatory section adjoining the planar section and arranged in a region of overlap one of the first membrane or the second membrane with the other one of the first membrane and or the second membrane.
    Type: Grant
    Filed: February 15, 2018
    Date of Patent: February 25, 2020
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Arnaud Walther, Alfons Dehe, Gerhard Metzger-Brueckl, Johann Strasser, Carsten Ahrens
  • Patent number: 10560771
    Abstract: In accordance with an embodiment, microelectromechanical microphone includes a holder and a sound detection unit carried on the holder. The sound detection unit includes a planar first membrane, a planar second membrane arranged at a distance from the first membrane, a low-pressure chamber formed between the first membrane and the second membrane, a reduced gas pressure relative to normal pressure being present in the low-pressure chamber, a reference electrode arranged at least in sections in the low-pressure chamber, where the first and second membranes are displaceable relative to the reference electrode by sound waves to be detected, the reference electrode includes a planar base section and a stiffening structure provided on the base section, and the stiffening structure is provided on a side of the base section that faces the first membrane or/and on a side of the base section that faces the second membrane.
    Type: Grant
    Filed: August 1, 2018
    Date of Patent: February 11, 2020
    Assignee: Infineon Technologies AG
    Inventors: Alfons Dehe, Gerhard Metzger-Brueckl, Johann Strasser, Arnaud Walther, Andreas Wiesbauer
  • Publication number: 20190244850
    Abstract: This application relates to a method for producing a semiconductor component, in which a wafer composite is provided. The wafer composite includes a donor substrate, an auxiliary substrate and a separation layer arranged between the auxiliary substrate and the donor substrate. The separation layer has a support structure and sacrificial material, which is formed laterally between elements of the support structure. The auxiliary substrate is separated from the donor substrate. The separation includes a selective removal of the sacrificial material in relation to the support structure.
    Type: Application
    Filed: January 31, 2019
    Publication date: August 8, 2019
    Inventors: Rudolf Berger, Wolfgang Lehnert, Gerhard Metzger-Brueckl, Guenther Ruhl, Roland Rupp
  • Publication number: 20190244853
    Abstract: A wafer composite is provided which includes an auxiliary substrate, a donor substrate and a sacrificial layer formed between the auxiliary substrate and the donor substrate. Functional elements of the semiconductor component are formed in a component layer, including at least one partial layer of the donor substrate. The auxiliary substrate is then separated from the component layer by heat input into the sacrificial layer.
    Type: Application
    Filed: January 31, 2019
    Publication date: August 8, 2019
    Inventors: Rudolf Berger, Wolfgang Lehnert, Gerhard Metzger-Brueckl, Guenther Ruhl, Roland Rupp
  • Publication number: 20190112182
    Abstract: A method for sealing an access opening to a cavity comprises the following steps: providing a layer arrangement having a first layer structure and a cavity arranged adjacent to the first layer structure, wherein the first layer structure has an access opening to the cavity, performing a CVD layer deposition for forming a first covering layer having a layer thickness on the first layer structure having the access opening, and performing an HDP layer deposition with a first and second substep for forming a second covering layer on the first covering layer, wherein the first substep comprises depositing a liner material layer on the first covering layer, wherein the second substep comprises partly backsputtering the liner material layer and furthermore the first covering layer in the region of the access opening, and wherein the first and second substeps are carried out alternately and repeatedly a number of times.
    Type: Application
    Filed: October 16, 2018
    Publication date: April 18, 2019
    Inventors: Gerhard Metzger-Brueckl, Alfons Dehe, Uwe Hoeckele, Johann Strasser, Arnaud Walther
  • Publication number: 20190092624
    Abstract: A production method for a MEMS component includes providing a layer arrangement on a carrier substrate, where the layer arrangement includes a first and second layer structure. A sacrificial material is arranged in an intermediate region between the first and second layer structures, an etch stop structure extending between the first and second layer structures subdivides the intermediate region into an exposure region and an edge region laterally adjoining the exposure region, and at least one of the first layer structure or the second layer structure has access openings to the exposure region. The method further includes removing the sacrificial material from the exposure region through the access openings using an etching process to expose the exposure region. The etch stop structure provides a lateral delimitation for the etching process, and the sacrificial material present in the edge region provides a mechanical connection between the first and second layer structures.
    Type: Application
    Filed: September 20, 2018
    Publication date: March 28, 2019
    Inventors: Arnaud Walther, Alfons Dehe, Gerhard Metzger-Brueckl, Johann Strasser
  • Publication number: 20190084827
    Abstract: In accordance with an embodiment, a MEMS microphone includes a sound detection unit having a first membrane, a second membrane arranged at a distance from the first membrane, a low-pressure region arranged between the first membrane and the second membrane, a gas pressure that is reduced in relation to normal pressure being present in said low-pressure region, a counter electrode arranged in the low-pressure region, and a sound through-hole, which extends through the sound detection unit in a thickness direction of the sound detection unit; and a valve provided at the sound through-hole, said valve being configured to adopt a plurality of valve states, wherein a predetermined degree of transmission of the sound through-hole to sound is assigned to each valve state
    Type: Application
    Filed: September 18, 2018
    Publication date: March 21, 2019
    Inventors: Alfons Dehe, Ulrich Krumbein, Gerhard Metzger-Brueckl, Johann Strasser, Juergen Wagner, Arnaud Walther
  • Publication number: 20190071305
    Abstract: A production method for a double-membrane MEMS component includes: providing a layer arrangement on a carrier substrate, wherein the layer arrangement comprises a first membrane structure, a sacrificial material layer adjoining the first membrane structure, and a counterelectrode structure in the sacrificial material layer and at a distance from the first membrane structure, wherein at least one through opening is formed in the sacrificial material layer as far as the first membrane structure; forming a filling material structure in the at least one through opening by applying a first filling material layer on the wall region of the at least one through opening; applying a second membrane structure on the layer arrangement with the sacrificial material; and removing the sacrificial material from an intermediate region to expose the filling material structure in the intermediate region.
    Type: Application
    Filed: August 30, 2018
    Publication date: March 7, 2019
    Inventors: Johann Strasser, Alfons Dehe, Gerhard Metzger-Brueckl, Juergen Wagner, Arnaud Walther
  • Publication number: 20190058936
    Abstract: In accordance with an embodiment, microelectromechanical microphone includes a holder and a sound detection unit carried on the holder. The sound detection unit includes a planar first membrane, a planar second membrane arranged at a distance from the first membrane, a low-pressure chamber formed between the first membrane and the second membrane, a reduced gas pressure relative to normal pressure being present in the low-pressure chamber, a reference electrode arranged at least in sections in the low-pressure chamber, where the first and second membranes are displaceable relative to the reference electrode by sound waves to be detected, the reference electrode includes a planar base section and a stiffening structure provided on the base section, and the stiffening structure is provided on a side of the base section that faces the first membrane or/and on a side of the base section that faces the second membrane.
    Type: Application
    Filed: August 1, 2018
    Publication date: February 21, 2019
    Inventors: Alfons Dehe, Gerhard Metzger-Brueckl, Johann Strasser, Arnaud Walther, Andreas Wiesbauer