Abstract: In an embodiment, a semiconductor die includes a base substrate having a first major surface, a second major surface opposing the first major surface, and a material other than a Group III nitride. A Group III nitride layer arranged on the first major surface of the base substrate includes a Group III nitride device. A first metallization structure is arranged on the Group III nitride layer and a second metallization structure is arranged on the second major surface of the base layer. The second metallization structure includes an electrically insulating inorganic layer arranged directly on the second major surface.

Abstract: A semiconductor device includes: a plurality of transistor cells formed in a semiconductor body. The plurality of transistor cells includes: a plurality of stripe-shape gate trenches formed in a first main surface of the semiconductor body; and a plurality of field plate trenches separate from the stripe-shape gate trenches. At least one field plate trench is laterally interposed between each pair of neighboring stripe-shape gate trenches. Each stripe-shape gate trench includes a gate electrode, a gate dielectric between the gate electrode and a sidewall of the stripe-shape gate trench, and an oxide between the gate electrode and a bottom of the stripe-shape gate trench, the oxide having a vertical thickness that is greater than eight times a lateral thickness of the gate dielectric and/or greater than a vertical thickness of the gate electrode. A method of producing the semiconductor device is also described.

Abstract: A transistor device includes: a plurality of transistor cells in a semiconductor substrate; and a source pad above the semiconductor substrate and electrically connected to a source region and a body region of the transistor cells. A first group of the transistor cells has a first body region average doping concentration. A second group of the transistor cells has a second body region average doping concentration higher than the first body region average doping concentration. The transistor cells of the first and second groups are interleaved. The transistor cells have a first source region density in a first area of the semiconductor substrate underneath a region of the source pad designated for clip contacting, and a second source region density lower than the first source region density in a second area of the semiconductor substrate outside the first area.

Abstract: The disclosure relates to a semiconductor die with a semiconductor body. The semiconductor die includes a vertical transistor device formed in a first area of the semiconductor body. The vertical transistor device includes a source region at a first side of the semiconductor body and a drain region at a second side of the semiconductor body. The semiconductor die further includes a first electrical isolation between the first area and a second area of the semiconductor body, and a diode in the second area of the semiconductor body. A cathode contact of the diode is electrically connected to the source region of the vertical transistor device.

Abstract: An electronic circuit and a method are disclosed. The electronic circuit includes: a first transistor device having a first drive node, a second drive node, and a load path; and a protection circuit coupled to the first and second drive nodes and the load path of the first transistor device. The protection circuit includes a second transistor device having a first drive node, a second drive node, and a load path connected between the first and second drive nodes of the first transistor device, and a capacitor coupled between the load path of the first transistor device and the first drive node of the second transistor device. A capacitance of the capacitor is voltage dependent such that the capacitance decreases as a voltage across the capacitor increases.

Abstract: The present application relates to a semiconductor device, including: a field electrode in a needle-shaped field electrode trench extending from a frontside of a semiconductor body into the semiconductor body; a lower metallization layer on the frontside of the semiconductor body and electrically connected to the field electrode; an insulating layer on the lower metallization layer; an upper metallization layer on the insulating layer, and a first interconnect electrically connecting the lower metallization layer to the upper metallization layer. The first interconnect is laterally offset to the field electrode trench. The lower metallization layer is not connected to the upper metallization layer in a region vertically above the field electrode trench.

Abstract: A semiconductor package includes low voltage and high voltage contact pads, an output contact pad, a half-bridge circuit, and first, second and third leads. The half bridge circuit includes first and second transistor devices coupled in series at an output node. Both transistor devices have a first major surface which extends substantially perpendicularly to the low voltage contact pad, the high voltage contact pad, and the output contact pad. Both transistor devices are arranged in a device portion of the package and are mounted on a first lead, the first lead providing the output contact pad and being arranged on a first side of the device portion. The second and third leads are arranged in a common plane on a second side of the device portion that opposes the first side. The second lead provides the low voltage pad and the third second lead provides the high voltage output pad.

Abstract: A semiconductor chip is provided. The semiconductor chip may include a front side including a control chip contact and a first controlled chip contact, a back side including a second controlled chip contact, a backside metallization formed over the back side in contact with the second controlled chip contact, and a stop region extending at least partially along an outer edge of the back side between a contact portion of the backside metallization and the outer edge of the back side. The contact portion is configured to be attached to an electrically conductive structure by a die attach material, a surface of the stop region is recessed with respect to a surface of the contact portion, and/or the surface of the stop region has a lower wettability with respect to the die attach material than the contact portion.

Abstract: A plug connection between electrical and/or electronic components, in which electrical plug contacts of a plug which is arranged directly adjacently to one component are inserted into a socket which is arranged directly adjacently to the other component, with the components being interlocked with one another by a connection arrangement or being combined to form an assembly, and in which a separate plug connection securing arrangement which is independent of the connection arrangement of the components is provided to secure the plug connection against movements of the plug relative to the socket and vice versa.

Abstract: A spray extraction nozzle for taking in liquids which have been applied to a surface includes a suction duct which ends in a suction mouth, and a spray nozzle, as well as an adapter for working on surfaces which have different properties. The adapter is connected to the spray extraction nozzle through a pivot axis, and the adapter can be pivoted from a position of rest which is remote from the suction mouth to a position of operation in front of the suction mouth of the spray extraction nozzle.

Abstract: A holder with a device for holding a flexible circuit board is provided. The holder comprises at least one further device for holding at least one component such that the component may be electrically connected to or disconnected from the circuit board.

Abstract: A plug connection between electrical and/or electronic components, in which electrical plug contacts of a plug which is arranged directly adjacently to one component are inserted into a socket which is arranged directly adjacently to the other component, with the components being interlocked with one another by a connection arrangement or being combined to form an assembly, and in which a separate plug connection securing arrangement which is independent of the connection arrangement of the components is provided to secure the plug connection against movements of the plug relative to the socket and vice versa.

Abstract: A holder with a device for holding a flexible circuit board is provided. The holder comprises at least one further device for holding at least one component such that the component may be electrically connected to or disconnected from the circuit board.