Abstract: Systems and methods relating to improving transmit (TX) port to receive (RX) port isolation of a duplexer or multiplexer are disclosed. In some embodiments, a system includes a duplexer or multiplexer having a transmit port, a receive port, and an antenna port. The system further includes a leakage cancellation subsystem adapted to cancel a leakage signal from the TX port of the duplexer or multiplexer to the RX port of the duplexer or multiplexer across a desired cancellation bandwidth. The leakage cancellation subsystem compensates for variation of the leakage signal across the desired cancellation bandwidth, thereby improving TX port to RX port isolation over conventional systems.

Abstract: A fluidic device includes at least one bulk acoustic wave (BAW) resonator structure with a functionalized active region, and at least one first (inlet) port defined through a cover structure arranged over a fluidic passage containing the active region. At least a portion of the at least one inlet port is registered with the active region, permitting fluid to be introduced in a direction orthogonal to a surface of the active region bearing functionalization material. Such arrangement promotes mixing proximate to a BAW resonator structure surface, thereby reducing analyte stratification, increasing analyte binding rate, and reducing measurement time.

Abstract: Embodiments of a Bulk Acoustic Wave (BAW) device including a high conductivity electrode are disclosed. In some embodiments, a BAW device includes a piezoelectric layer, a first electrode on a first surface of the piezoelectric layer, and a second electrode on a second surface of the piezoelectric layer opposite the first electrode. The second electrode includes a first metal layer and a second metal layer. The second metal layer is on the second surface of the piezoelectric layer, and the first metal layer is over a surface of the second metal layer opposite the piezoelectric layer, where the first metal layer is separated from the second metal layer by an air gap. By including the air gap, the thickness of the first metal layer (e.g., a high conductivity layer) can be increased to thereby increase the electrical conductivity of the second electrode while maintaining the performance of the BAW device.

Abstract: Embodiments of a Bulk Acoustic Wave (BAW) resonator having a high quality factor (Q) and methods of fabrication thereof are disclosed. In some embodiments, a BAW resonator includes a piezoelectric layer, a first electrode on a first surface of the piezoelectric layer, and a second multi-layer electrode on a second surface of the piezoelectric layer opposite the first electrode on the first surface of the piezoelectric layer. In addition, the BAW resonator includes a Border (BO) ring positioned within the second multi-layer electrode around a periphery of an active region of the BAW resonator. The BO ring is either at a position within the second multi-layer electrode between two adjacent layers of the second multi-layer electrode or at a position within the second multi-layer electrode that is adjacent to the piezoelectric layer. In this manner, the quality factor (Q) of the BAW resonator is improved.

Abstract: Embodiments of a Bulk Acoustic Wave (BAW) resonator in which an outer region of the BAW resonator is engineered in such a manner that lateral leakage of mechanical energy from an active region of the BAW resonator is reduced, and methods of fabrication thereof, are disclosed. In some embodiments, a BAW resonator includes a piezoelectric layer, a first electrode on a first surface of the piezoelectric layer, a second electrode on a second surface of the piezoelectric layer opposite the first electrode, and a passivation layer on a surface of the second electrode opposite the piezoelectric layer, the passivation layer having a thickness (TPA). The BAW resonator also includes a material on the second surface of the piezoelectric layer adjacent to the second electrode in an outer region of the BAW resonator. The additional material has a thickness that is n times the thickness (TPA) of the passivation layer.

Abstract: An acoustic mirror of alternately arranged layers of high and low acoustic impedances is manufactured in that a basic material having a first layer of the layer sequence is initially provided, on which a second layer of the layer sequence is created on the first layer such that the second layer of the layer sequence partially covers the first layer. Subsequently, a planarization layer is applied onto the layer sequence, and the planarization layer is removed in an area which in the common layer plane projects laterally beyond the second layer so as to result in a residual planarization layer. Finally, a termination layer is applied onto the layer sequence and the residual planarization layer.

Abstract: A mirror for a piezoelectric resonator consisting of alternately arranged layers of high and low acoustic impedance is manufactured by at first producing a first layer on which a second layer is produced, so that the second layer partially covers the first layer. Then, a planarization layer is applied on the first layer and on the second layer. Subsequently, a portion of the second layer is exposed by structuring the planarization layer, wherein the portion is associated with an active region of the piezoelectric resonator. Finally, the resulting structure is planarized by removing the portions of the planarization layer remaining outside the portion.

Abstract: A thin-film BAW filter has at least one CRF section and at least one ladder or grating filter section, with the CRF section having at least two coupled resonators, with the CRF section and the ladder or grating filter section being integrated on a common substrate, in order to produce a thin-film BAW filter. In a method for production of a thin-film BAW filter, having at least one CRF section and at least one ladder or grating filter section, the CRF section has at least two coupled resonators and the CRF section and the ladder or grating filter section are integrated on a common substrate.

Abstract: A mirror for a piezoelectric resonator consisting of alternately arranged layers of high and low acoustic impedance is manufactured by at first producing a first layer on which a second layer is produced, so that the second layer partially covers the first layer. Then, a planarization layer is applied on the first layer and on the second layer. Subsequently, a portion of the second layer is exposed by structuring the planarization layer, wherein the portion is associated with an active region of the piezoelectric resonator. Finally, the resulting structure is planarized by removing the portions of the planarization layer remaining outside the portion.

Abstract: An acoustic mirror of alternately arranged layers of high and low acoustic impedances is manufactured in that a basic material having a first layer of the layer sequence is initially provided, on which a second layer of the layer sequence is created on the first layer such that the second layer of the layer sequence partially covers the first layer. Subsequently, a planarization layer is applied onto the layer sequence, and the planarization layer is removed in an area which in the common layer plane projects laterally beyond the second layer so as to result in a residual planarization layer. Finally, a termination layer is applied onto the layer sequence and the residual planarization layer.

Abstract: A mirror for a piezoelectric resonator consisting of alternately arranged layers of high and low acoustic impedance is manufactured by at first producing a first layer on which a second layer is produced, so that the second layer partially covers the first layer. Then, a planarization layer is applied on the first layer and on the second layer. Subsequently, a portion of the second layer is exposed by structuring the planarization layer, wherein the portion is associated with an active region of the piezoelectric resonator. Finally, the resulting structure is planarized by removing the portions of the planarization layer remaining outside the portion.

Abstract: An acoustic mirror of alternately arranged layers of high and low acoustic impedances is manufactured in that a basic material having a first layer of the layer sequence is initially provided, on which a second layer of the layer sequence is created on the first layer such that the second layer of the layer sequence partially covers the first layer. Subsequently, a planarization layer is applied onto the layer sequence, and the planarization layer is removed in an area which in the common layer plane projects laterally beyond the second layer so as to result in a residual planarization layer. Finally, a termination layer is applied onto the layer sequence and the residual planarization layer.

Abstract: A method for manufacturing a coupled resonator device includes forming a first part of a plurality of layers, trimming an exposed layer of the first part and forming a remaining part of the plurality of layers. The coupled resonator device includes a stack of the plurality of layers, the plurality of layers including a first piezo-layer with a first and a second electrode layer sandwiching the first piezo-layer, a second piezo-layer with a first and a second electrode layer sandwiching the second piezo-layer, the first and second piezo-layers being acoustically coupled to each other.

Abstract: A method for manufacturing a patterned bottom electrode in a piezoelectric device comprises the steps of providing a basic material and producing a layer structure of a conductive material on the basic material. A protective layer is applied on the layer structure over an area. Thereafter, a planarization layer is applied on the protective layer and on the basic material. A portion of the protective layer is then exposed by patterning the planarization layer. Subsequently, the pattern is planarized by removing the portions of the planarization layer remaining outside the portion such that the protective layer laterally abuts on the planarization layer in a flush manner and forms a planar surface. The protective layer is then removed along with a corresponding part of the planarization layer laterally arranged in a flush manner. This results in the layer structure and the remaining planarization layer forming a planar surface.

Abstract: A method for manufacturing a coupled resonator device includes forming a first part of a plurality of layers, trimming an exposed layer of the first part and forming a remaining part of the plurality of layers. The coupled resonator device includes a stack of the plurality of layers, the plurality of layers including a first piezo-layer with a first and a second electrode layer sandwiching the first piezo-layer, a second piezo-layer with a first and a second electrode layer sandwiching the second piezo-layer, the first and second piezo-layers being acoustically coupled to each other.

Abstract: An acoustic mirror of alternately arranged layers of high and low acoustic impedances is manufactured in that a basic material having a first layer of the layer sequence is initially provided, on which a second layer of the layer sequence is created on the first layer such that the second layer of the layer sequence partially covers the first layer. Subsequently, a planarization layer is applied onto the layer sequence, and the planarization layer is removed in an area which in the common layer plane projects laterally beyond the second layer so as to result in a residual planarization layer. Finally, a termination layer is applied onto the layer sequence and the residual planarization layer.

Abstract: A method for manufacturing a patterned bottom electrode in a piezoelectric device comprises the steps of providing a basic material and producing a layer structure of a conductive material on the basic material. A protective layer is applied on the layer structure over an area. Thereafter, a planarization layer is applied on the protective layer and on the basic material. A portion of the protective layer is then exposed by patterning the planarization layer. Subsequently, the pattern is planarized by removing the portions of the planarization layer remaining outside the portion such that the protective layer laterally abuts on the planarization layer in a flush manner and forms a planar surface. The protective layer is then removed along with a corresponding part of the planarization layer laterally arranged in a flush manner. This results in the layer structure and the remaining planarization layer forming a planar surface.

Abstract: A mirror for a piezoelectric resonator consisting of alternately arranged layers of high and low acoustic impedance is manufactured by at first producing a first layer on which a second layer is produced, so that the second layer partially covers the first layer. Then, a planarization layer is applied on the first layer and on the second layer. Subsequently, a portion of the second layer is exposed by structuring the planarization layer, wherein the portion is associated with an active region of the piezoelectric resonator. Finally, the resulting structure is planarized by removing the portions of the planarization layer remaining outside the portion.

Abstract: A thin-film BAW filter has at least one CRF section and at least one ladder or grating filter section, with the CRF section having at least two coupled resonators, with the CRF section and the ladder or grating filter section being integrated on a common substrate, in order to produce a thin-film BAW filter. In a method for production of a thin-film BAW filter, having at least one CRF section and at least one ladder or grating filter section, the CRF section has at least two coupled resonators and the CRF section and the ladder or grating filter section are integrated on a common substrate.

Abstract: A BAW resonator includes a piezoelectric layer, a first electrode, a second electrode, a substrate, and an acoustic reflector disposed between the substrate and the second electrode. The acoustic reflector has a plurality of layers. A performance of the acoustic reflector is determined by its reflectivity for a longitudinal wave existing in the BAW resonator at the resonance frequency of the BAW resonator and by its reflectivity for a shear wave existing in the BAW resonator at the resonance frequency of the BAW resonator. The layers of the acoustic reflector and layers disposed between the acoustic reflector and the piezoelectric layer are selected, with reference to their number, material, and thickness, such that the transmissivity for the longitudinal wave and the transmissivity for the shear wave in the area of the resonance frequency is smaller than ?10 dB.