Abstract: Various embodiments may relate to a sensor unit having a plurality of sensor elements, the detection data of which are used for controlling an opto-electronic light source. According to various embodiments, the plurality of sensor elements are arranged on a substrate body, which is provided in the form of a molded circuit carrier made of a plastic material, and detect different regions and/or sizes.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment a method for producing an optoelectronic component includes providing a semiconductor capable of emitting primary radiation, providing an alkoxy-functionalized polyorganosiloxane resin and crosslinking the alkoxy-functionalized polyorganosiloxane resin to form a three-dimensionally crosslinked polyorganosiloxane, wherein an organic portion of the three-dimensionally crosslinked polyorganosiloxane is up to 25 wt %.

Abstract: In various embodiments, a substrate for receiving an optoelectronic component is provided. The substrate includes a carrier body, and filler particles, which are embedded in the carrier body and which each have an electrically and thermally highly conductive core and an electrically insulating enveloping layer.

Abstract: A wavelength conversion element comprising a crosslinked matrix and at least one phosphor dispersed in said matrix, wherein said matrix is made from a precursor material comprising a precursor having a structure chosen from one of the generic formulae is provided. Further, a light emitting device comprising a wavelength conversion element and a method for producing a wavelength conversion element are provided.

Abstract: A method for producing a light-emitting diode includes providing a light-emitting diode chip including a semiconductor body, and applying a luminescence conversion material to an outer area of the semiconductor body by thermal spraying such that at least part of electromagnetic radiation generated during operation of the light-emitting diode impinges on the luminescence conversion material, or providing a radiation-transmissive carrier, applying a luminescence conversion material to an outer area of the carrier by thermal spraying, and arranging the carrier at a radiation exit area of the light-emitting diode chip such that at least part of electromagnetic radiation generated during operation of the light-emitting diode impinges on the luminescence conversion material.

Abstract: Various embodiments relate to an optoelectronic component, including a carrier element, on which at least one optoelectronic semiconductor chip is arranged, and a cover, which is mounted on the carrier element in a region extending circumferentially around the semiconductor chip and together with the carrier element forms a sealed cavity in which the at least one optoelectronic semiconductor chip is arranged in an inert gas.

Abstract: A method for manufacturing a carrier and a carrier for an optoelectronic unit are disclosed. In various embodiments the carrier has a carrier material which includes polyethylene terephthalate which contains reflector particles and a filler.

Abstract: In various embodiments, a lighting unit is provided. The lighting unit may include a hollow body made of a plastics material as a substrate, which hollow body has an outer surface and an opposite inner surface, wherein the latter at least partially delimits a hollow body internal volume, a plurality of light emitting diodes, which are arranged on the outer surface of the hollow body, and a conductor track structure, which is electrically conductively connected to the light emitting diodes. The conductor track structure is arranged on the inner surface of the hollow body, and the electrically conductive connection to the light emitting diodes is produced by through-contacts, which are passed through the plastics material.

Abstract: Various embodiments may relate to a sensor unit having a plurality of sensor elements, the detection data of which are used for controlling an opto-electronic light source. According to various embodiments, the plurality of sensor elements are arranged on a substrate body, which is provided in the form of a molded circuit carrier made of a plastic material, and detect different regions and/or sizes.

Abstract: A carrier for an optoelectronic unit has a carrier material which includes polyethylene terephthalate which contains reflector particles and a further filler. Methods for the production of the optoelectronic unit and the carrier are also disclosed.

Abstract: The lighting device has at least one LED chip that is potted by means of a potting compound, which potting compound has a light-transmissive, castable and curable matrix material comprising scattering volumes as filler material, wherein the scattering volumes are distributed inhomogeneously over a thickness of the potting compound and these scattering volumes have a lower density than the matrix material in its castable state. A method is used for producing a lighting device, which comprises at least one LED chip, by means of at least the following steps: potting the at least one LED chip by means of a potting compound containing scattering volumes, wherein the scattering volumes have a lower density than a matrix material of the potting compound in this state; curing the potting compound so that an inhomogeneous distribution of the scattering volumes is obtained owing to floating of the scattering volumes in the matrix material.

Abstract: A method can be used to produce a housing for an optoelectronic semiconductor device. A reflector part, which has an inner area configured to reflect electromagnetic radiation, is encased in places with a housing material using an injection molding method. The inner area of the reflector part remains free of the housing material at least in places. The reflector part is formed with a first plastic material and the housing material is formed with a second plastic material that is different than the first plastic material. The first plastic material and the second plastic material differ from one another with regard to at least thermal stability or resistance to electromagnetic radiation.

Abstract: An optoelectronic semiconductor chip includes an active layer with a first and a second major face, including a semiconductor material which emits or receives radiation when the semiconductor chip is in operation; a patterned layer including three-dimensional patterns for outcoupling or incoupling radiation and arranged on the first major face in a beam path of the radiation, wherein the patterned layer includes an inorganic-organic hybrid material.

Abstract: An optoelectronic semiconductor component includes at least one radiation-emitting semiconductor chip including a radiation-outcoupling face through which at least some of electromagnetic radiation generated in the semiconductor chip leaves the semiconductor chip; and at least one radiation-transmissive body arranged at least in places downstream of the semiconductor chip on its radiation-outcoupling face, which body is in at least indirect contact with the semiconductor chip, wherein the radiation-transmissive body is formed with at least one polymer or contains at least one polymer, and one monomer of the polymer is formed with at least one silazane.

Abstract: An optoelectronic component includes a housing which includes a first partial region having a first thermoplastic material crosslinked by irradiation and a second partial region having a second thermoplastic material, a recess in the housing, and a radiation-emitting device disposed in the recess.

Abstract: In various embodiments, a lighting unit is provided. The lighting unit may include a hollow body made of a plastics material as a substrate, which hollow body has an outer surface and an opposite inner surface, wherein the latter at least partially delimits a hollow body internal volume, a plurality of light emitting diodes, which are arranged on the outer surface of the hollow body, and a conductor track structure, which is electrically conductively connected to the light emitting diodes. The conductor track structure is arranged on the inner surface of the hollow body, and the electrically conductive connection to the light emitting diodes is produced by through-contacts, which are passed through the plastics material.

Abstract: An optoelectronic semiconductor component includes a radiation emitting semiconductor chip having a radiation coupling out area. Electromagnetic radiation generated in the semiconductor chip leaves the semiconductor chip via the radiation coupling out area. A converter element is disposed downstream of the semiconductor chip at its radiation coupling out area. The converter element is configured to convert electromagnetic radiation emitted by the semiconductor chip. The converter element has a first surface facing away from the radiation coupling out area. A reflective encapsulation encapsulates the semiconductor chip and portions of the converter element at side areas in a form-fitting manner. The first surface of the converter element is free of the reflective encapsulation.

Abstract: A housing for an optoelectronic component including a main housing body formed by a first plastics material, and which has a recess, and a coating formed by a second plastics material, and which, at least in a region of the recess, connects at least in places to the main housing body and is in direct contact with the main housing body, wherein the first plastics material is different from the second plastics material, and the first plastics material and the second plastics material differ from one another with regard to at least one of the following material properties: temperature resistance with regard to discoloration, temperature resistance with regard to deformation, temperature resistance with regard to destruction, and resistance to electromagnetic radiation.

Abstract: Various embodiments relate to an optoelectronic component, including a carrier element, on which at least one optoelectronic semiconductor chip is arranged, and a cover, which is mounted on the carrier element in a region extending circumferentially around the semiconductor chip and together with the carrier element forms a sealed cavity in which the at least one optoelectronic semiconductor chip is arranged in an inert gas.

Abstract: In at least one embodiment, an optoelectronic semiconductor component includes an optoelectronic semiconductor chip. The semiconductor component includes a conversion element that is arranged to convert at least some radiation emitted by the semiconductor chip into radiation of a different wavelength. The conversion element comprises at least one luminescent substance and scattering particles and also at least one matrix material. The scattering particles are embedded in the matrix material. A difference in the refractive index between the matrix material and a material of the scattering particles at a temperature of 300 K is at the most 0.15. The difference in the refractive index between the matrix material and the material of the scattering particles at a temperature of 380 K is greater than at a temperature of 300 K.