Abstract: A suspension system for a vehicle is capable of preventing a spring from completely escaping from a spring pad when rebound additionally occurs in a full-rebound state during driving of the vehicle and thus the spring is extended beyond the extendable range thereof (or the free height thereof).

Abstract: A semiconductor memory device and a method of manufacturing the semiconductor memory device are provided. The semiconductor memory device includes a gate stacked structure with a cell array region and a contact region with a stepped shape, and a roughness of a first sidewall of the cell array region is greater than that of a second sidewall of the contact region.

Abstract: A semiconductor device may include a gate structure including stacked local lines and a multi-step structure, wherein the multi-step structure defines pads of the local lines, channel patterns respectively disposed over the pads, a block word line disposed over the channel patterns and extending along a profile of the multi-step structure, and first contact plugs passing through the channel patterns and respectively connecting the channel patterns and the local lines.

Abstract: A semiconductor device may include a source structure, a support structure positioned on the source structure and including a first inclined surface extending in a second direction crossing the first direction, a gate structure positioned on the source structure and the support structure and including conductive layers and insulating layers alternately stacked, channel structures extending through the gate structure and connected to the source structure, and a slit structure extending in the first direction through the gate structure, wherein each of the conductive layers includes a second inclined surface extending in the second direction.

Abstract: The present invention relates to a method of assisting in diagnosis of a target heart disease using a retinal image, the method including: obtaining a target retinal image which is obtained by imaging a retina of a testee; on the basis of the target retinal image, obtaining heart disease diagnosis assistance information of the testee according to the target retinal image, via a heart disease diagnosis assistance neural network model which obtains diagnosis assistance information that is used for diagnosis of the target heart disease according to the retinal image; and outputting the heart disease diagnosis assistance information of the testee.

Abstract: There are provided a memory device and a manufacturing method of the memory device. The memory device includes: a first gate stack structure and a second gate stack structure, disposed on a substrate; and a slit disposed between the first gate stack structure and the second gate stack structure to electrically isolate the first gate stack structure and the second gate stack structure from each other.

Abstract: A memory device includes a first peripheral circuit having first page buffers is functionally divided into a cell region and a connection region. A first memory cell array positioned on the first peripheral circuit includes first bit lines that are electrically connected to the first page buffers. A second memory cell array positioned on the first memory cell array includes second bit lines, which are electrically connected to the first bit lines, respectively. The first peripheral circuit is able to make use of both memory arrays using connections between the two memory arrays.

Abstract: The present technology relates to a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes a first stack structure, a plurality of first slits passing through the first stack structure in a vertical direction and extending in a first horizontal direction orthogonal to the vertical direction, a first source line layer contacting an a top portion of the first stack structure, a second source line layer directly contacting the first source line layer, a second stack structure contacting the second source line layer and overlapping with the first stack structure in the vertical direction, and a plurality of second slits passing through the second stack structure in the vertical direction and extending in a second horizontal direction orthogonal to the vertical direction.

Abstract: Disclosed in an intravascular ultrasound (IVUS) image analysis method, comprising the steps of: allowing a computer to acquire an IVUS image of an object; segmenting a constituent element included in the IVUS image; and determining the constituent parts and the degree of risk of plaque included in the IVUS image.

Abstract: The present technology includes a memory device and a method of manufacturing the memory device. The memory device includes a memory block in which first and second connection regions and a cell region between the first and second connection regions are designated, a word line included in the memory block, a first drain selection line included in the memory block and positioned on the word line, a first drain contact contacting the first drain selection line of the first connection region, a second drain contact contacting the first drain selection line of the second connection region, and a first drain voltage supply line commonly contacting the first and second drain contacts.

Abstract: A semiconductor memory device may include includes a bit line and a back gate strap line extending on a substrate, an active pattern on the bit line and the back gate strap line, a word line on a first side wall of the active pattern, a back gate electrode on a second side wall of the active pattern and connected to the back gate strap line, a data storage pattern connected to a face of the active pattern, and a word line contact plug connected to the word line. A first face of the back gate electrode and a first face of the word line may face the bit line and the back gate strap line. The first face of the back gate electrode may be connected to the back gate strap line. A second face of the word line may be connected to the word line contact plug.

Abstract: A memory device may include a stack structure including a plurality of conductive layers and a plurality of interlayer insulating layers, which are alternately stacked along a first direction, an opening extending in the first direction from at least one conductive layer, among the plurality of conductive layers, in the stack structure, and a contact plug in the opening. The opening may include a protrusion portion protruding in a second direction intersecting the first direction.

Abstract: There are provided a memory device and a manufacturing method of the memory device. The memory device includes: a first gate stack structure and a second gate stack structure, disposed on a substrate; and a slit disposed between the first gate stack structure and the second gate stack structure to electrically isolate the first gate stack structure and the second gate stack structure from each other.

Abstract: The present disclosure provides imidazolyl compounds of Formula (I) and methods of preparing the compounds. The provided compounds are able to bind protein kinases and may be useful in modulating (e.g., inhibiting) the activity of a protein kinase in a subject or cell and/or in treating or preventing a disease (e.g., proliferative disease, genetic disease, hematological disease, neurological disease, painful condition, psychiatric disorder, or metabolic disorder) in a subject in need thereof. Also provided are pharmaceutical compositions, kits, methods, and uses that include or involve a compound described herein.

Abstract: A memory device may include: a stack structure including a plurality of conductive layers and a plurality of interlayer insulating layers, which are alternately stacked along a first direction, the stack structure including a cell region and a contact region, the contact region extending from the cell region and having a stepped structure; a plurality of contact plugs respectively in contact with the plurality of conductive layers in the contact region, the plurality of contact plugs extending in the first direction; and a plurality of lower pillars respectively in contact with the contact plugs, the plurality of lower pillars being located on the bottom of the contact plugs in the stack structure. Each of the plurality of lower pillars may include a liner layer in contact with the stack structure, and a pillar structure surrounded by the liner layer.

Abstract: A semiconductor device, and a method of manufacturing the same, includes a gate stack including a plurality of conductive lines extending in a first horizontal direction, a first slit and a second slit passing through the gate stack in a vertical direction and extending in the first horizontal direction, and a plurality of cell plugs extending in the vertical direction orthogonal to the first horizontal direction in the gate stack between the first slit and the second slit. Each of the first slit and the second slit includes a first portion extending in a diagonal direction between the first horizontal direction and a second horizontal direction orthogonal to the first horizontal direction, and a second portion extending in the first horizontal direction.

Abstract: A memory device, and a method of manufacturing the same, includes a first select line including a first cell area, a second select line including a second cell area disposed in a first direction from the first cell area, a first separation pattern extending in a second direction intersecting the first direction between the first cell area and the second cell area, second separation patterns extending from both ends of the first separation pattern in the first direction and a third direction opposite the first direction, respectively, and a third separation pattern extending from at least one of the second separation patterns in the second direction, and disposed in a direction opposite the first separation pattern with respect to the at least one second separation pattern.

Abstract: A mounting plate and a cover assembly for a steering wheel, which cover assembly includes the mounting plate, are provided. The mounting plate is configured so that a hook of the mounting plate does not directly press an inner cover of the cover assembly. The mounting plate includes a plate body provided to form an exterior of the mounting plate, the hook being configured to protrude from an outer surface of the plate body to penetrate an outer cover and the inner cover of the cover assembly. A rib is also provided which is configured to form an entry space for the hook to enter between the plate body and the inner cover by pressing the inner cover during assembly.

Abstract: The present disclosure relates to a semiconductor memory device. The semiconductor memory device includes a gate stack, a hole penetrating the gate stack, and a channel structure. The hole has an undercut region defined on a sidewall thereof. The channel structure covers a portion of the undercut region and opens another portion of the undercut region.

Abstract: A semiconductor device may include: a gate structure including insulating layers and conductive layers alternately stacked; first supports located in the gate structure, each first support including a second channel layer; second supports located in the gate structure, each second support including a barrier layer; and contact structures extending between the second supports through the gate structure, wherein each contact structure is connected to a corresponding conductive layer.