Abstract: Semiconductor packages and, more particularly, semiconductor packages with increased power handling capabilities are disclosed. Semiconductor packages may include lead frame structures and corresponding housings that incorporate semiconductor die. To promote increased current and voltage capabilities, exemplary semiconductor packages include one or more arrangements of creepage extension structures, lead frame structures that may include integral thermal pads, additional thermal elements, and combinations thereof. Creepage extension structures may be arranged as part of top sides of semiconductor packages along with thermal pads of lead frame structures and additional thermal elements. Creepage extension structures may also be arranged as part of top sides and along on one or more peripheral edges of semiconductor packages to promote further increases in power handling.

Abstract: Example superlattice structures and methods for thermoelectric devices are provided. An example structure may include a plurality of superlattice periods. Each superlattice period may include a first material layer disposed adjacent to a second material layer. For each superlattice period, the first material layer may be formed of a first material and the second material layer may be formed of a second material. The plurality of superlattice periods may include a first superlattice period and a second superlattice period. A thickness of a first material layer of the first superlattice period may be different than a thickness of a first material layer of the second superlattice period.

Abstract: Example superlattice structures and methods for thermoelectric devices are provided. An example structure may include a plurality of superlattice periods. Each superlattice period may include a first material layer disposed adjacent to a second material layer. For each superlattice period, the first material layer may be formed of a first material and the second material layer may be formed of a second material. The plurality of superlattice periods may include a first superlattice period and a second superlattice period. A thickness of a first material layer of the first superlattice period may be different than a thickness of a first material layer of the second superlattice period.

Abstract: Power semiconductor packages are provided. In one example, a power semiconductor package may include a power semiconductor die. The power semiconductor package may include a housing having a first side and a second side opposing the first side. The power semiconductor package may include one or more electrical leads extending from the first side. The power semiconductor package may include one or more leadless surface mount type (SMT) connection structures on the second side.

Abstract: Example superlattice structures and methods for thermoelectric devices are provided. An example structure may include a plurality of superlattice periods. Each superlattice period may include a first material layer disposed adjacent to a second material layer. For each superlattice period, the first material layer may be formed of a first material and the second material layer may be formed of a second material. The plurality of superlattice periods may include a first superlattice period and a second superlattice period. A thickness of a first material layer of the first superlattice period may be different than a thickness of a first material layer of the second superlattice period.

Abstract: A power semiconductor device comprises a package, a power semiconductor die within the package, and a moisture barrier on an upper surface and side surfaces of an exterior of the package.

Abstract: Semiconductor packages and, more particularly, semiconductor packages with increased power handling capabilities are disclosed. Semiconductor packages may include lead frame structures and corresponding housings that incorporate semiconductor die. To promote increased current and voltage capabilities, exemplary semiconductor packages include one or more arrangements of creepage extension structures, lead frame structures that may include integral thermal pads, additional thermal elements, and combinations thereof. Creepage extension structures may be arranged as part of top sides of semiconductor packages along with thermal pads of lead frame structures and additional thermal elements. Creepage extension structures may also be arranged as part of top sides and along on one or more peripheral edges of semiconductor packages to promote further increases in power handling.

Abstract: An apparatus includes an anode of a cell for a battery, a cathode of the cell, an anode thermoelectric device, and a cathode thermoelectric device. The anode thermoelectric device may be operably coupled to the anode of the cell, and the anode thermoelectric device may be connected in electrical series with the anode of the cell. The cathode thermoelectric device may be operably coupled to the cathode of the cell, and the cathode thermoelectric device being connected in electrical series with the cathode of the cell. The cathode thermoelectric device and the anode thermoelectric device may operate as a heat pump system configured to remove heat from the cathode and provide heat to the anode in response to the cell being discharged, and remove heat from the anode and provide heat to the cathode in response to the cell being charged.

Abstract: Example superlattice structures and methods for thermoelectric devices are provided. An example structure may include a plurality of superlattice periods. Each superlattice period may include a first material layer disposed adjacent to a second material layer. For each superlattice period, the first material layer may be formed of a first material and the second material layer may be formed of a second material. The plurality of superlattice periods may include a first superlattice period and a second superlattice period. A thickness of a first material layer of the first superlattice period may be different than a thickness of a first material layer of the second superlattice period.

Abstract: Example superlattice structures and methods for thermoelectric devices are provided. An example structure may include a plurality of superlattice periods. Each superlattice period may include a first material layer disposed adjacent to a second material layer. For each superlattice period, the first material layer may be formed of a first material and the second material layer may be formed of a second material. The plurality of superlattice periods may include a first superlattice period and a second superlattice period. A thickness of a first material layer of the first superlattice period may be different than a thickness of a first material layer of the second superlattice period.

Abstract: An electric generator device is provided that includes a thermoelectric array, a base plate, and an electric power output. The thermoelectric array may include a hot side portion and a cold side portion. The base plate may be configured to receive heat from a heat source to be transferred to the hot side portion of the thermoelectric array. The electric power output may be electrically coupled to the thermoelectric array. The thermoelectric array may be configured to convert a temperature differential into an electric voltage for output to the electric power output. The power generation housing may be configured to hold a heat rejection substance that absorbs heat from the cold side portion of the thermoelectric array to facilitate generation of the temperature differential between the hot side portion and the cold side portion of the thermoelectric array.

Abstract: An apparatus includes an anode of a cell for a battery, a cathode of the cell, an anode thermoelectric device, and a cathode thermoelectric device. The anode thermoelectric device may be operably coupled to the anode of the cell, and the anode thermoelectric device may be connected in electrical series with the anode of the cell. The cathode thermoelectric device may be operably coupled to the cathode of the cell, and the cathode thermoelectric device being connected in electrical series with the cathode of the cell. The cathode thermoelectric device and the anode thermoelectric device may operate as a heat pump system configured to remove heat from the cathode and provide heat to the anode in response to the cell being discharged, and remove heat from the anode and provide heat to the cathode in response to the cell being charged.

Abstract: An electric generator device is provided that includes a thermoelectric array, a base plate, and an electric power output. The thermoelectric array may include a hot side portion and a cold side portion. The base plate may be configured to receive heat from a heat source to be transferred to the hot side portion of the thermoelectric array. The electric power output may be electrically coupled to the thermoelectric array. The thermoelectric array may be configured to convert a temperature differential into an electric voltage for output to the electric power output. The power generation housing may be configured to hold a heat rejection substance that absorbs heat from the cold side portion of the thermoelectric array to facilitate generation of the temperature differential between the hot side portion and the cold side portion of the thermoelectric array.

Abstract: Example superlattice structures and methods for thermoelectric devices are provided. An example structure may include a plurality of superlattice periods. Each superlattice period may include a first material layer disposed adjacent to a second material layer. For each superlattice period, the first material layer may be formed of a first material and the second material layer may be formed of a second material. The plurality of superlattice periods may include a first superlattice period and a second superlattice period. A thickness of a first material layer of the first superlattice period may be different than a thickness of a first material layer of the second superlattice period.