Abstract: An image sensor includes a plurality of photoelectric conversion devices formed in a substrate and first and second color filters. The first color filter is formed over a first photoelectric conversion device and comprised of an organic material. The second color filter is formed over a second photoelectric conversion device and comprised of a plurality of inorganic layers. With such different types of color filters, spectral characteristic of the image sensor are enhanced.

Abstract: Provided may be a treatment method to remove defects created on the surface of a substrate, a method of fabricating an image sensor by using the treatment method, and an image sensor fabricated by the same. The treatment method may include providing a semiconductor substrate including a surface defect, providing a chemical solution to a surface of the semiconductor substrate, and removing the surface defect by consuming the surface of the semiconductor substrate and forming a chemical oxide layer on the semiconductor substrate.

Abstract: A high-power optically end-pumped external-cavity semiconductor laser is provided having a laser chip including an active layer and a distributed Bragg reflector (DBR) for emitting light of a fundamental wavelength; an external mirror spaced apart from a first surface of the laser chip and forming a cavity resonator with the DBR; a second harmonic generation (SHG) crystal positioned between the external mirror and the laser chip; and a micro-lens integrated heat sink dissipating heat generated by the laser chip and bonded to a second surface of the laser chip to focus a pumping beam to be incident on the second surface of the laser chip.

Abstract: Provided are a laser module allowing direct light modulation and a laser display employing the laser module. The laser module may include a semiconductor chip, a Volume Bragg Grating (VBG), a pump laser and a non-linear optical element. The semiconductor chip includes an active layer generating light of primary wavelength and a reflective layer providing the generated light to a cavity and reflecting the light within the cavity. The VBG may output light repeatedly reflected between the reflective layer and the VBG. The non-linear optical element disposed outside a cavity between the semiconductor chip and the VBG may convert the light of a first wavelength emitted from the active layer into light of a second wavelength different from the first wavelength. The laser module having the above-mentioned construction uses an external cavity laser and a non-linear optical element to achieve direct light modulation.

Abstract: Provided is a VECSEL capable of achieving an excellent efficiency of a SHG crystal and being manufactured in a compact size. The VECSEL includes a laser chip, an external mirror, an SHG crystal, a lens element, and a wavelength selective mirror. The laser chip generates a first wavelength light, and the external mirror is spaced from the laser chip to face the front side of the laser chip. The SHG crystal is located between the external mirror and the laser chip to double the frequency of the first wavelength light to make a second wavelength light. The lens element is located between the SHG crystal and the laser chip to allow the first wavelength light generated from the laser chip to converge at the SHG crystal, and the wavelength selective mirror is located between the SHG crystal and the lens element to transmit the first wavelength light and reflect the second wavelength light to the external mirror.

Abstract: Example embodiments may provide a photodiode formed of semiconductor silicide and/or an image sensor using a photodiode formed of semiconductor silicide. The photodiode may have a p-n junction structure including a p-type semiconductor silicide and an n-type semiconductor silicide. The image sensor may include a substrate, a photodetector unit having the photodiode, which may perform photoelectric transformation, and/or a signal transmitter transmitting a signal generated by the photodetector unit to an output unit. The photodetector unit and/or the signal transmitter may be integrated in the substrate.

Abstract: Provided are a laser module allowing direct light modulation and a laser display employing the laser module. The laser module may include a semiconductor chip, a Volume Bragg Grating (VBG), a pump laser and a non-linear optical element. The semiconductor chip includes an active layer generating light of primary wavelength and a reflective layer providing the generated light to a cavity and reflecting the light within the cavity. The VBG may output light repeatedly reflected between the reflective layer and the VBG. The non-linear optical element disposed outside a cavity between the semiconductor chip and the VBG may convert the light of a first wavelength emitted from the active layer into light of a second wavelength different from the first wavelength. The laser module having the above-mentioned construction uses an external cavity laser and a non-linear optical element to achieve direct light modulation.

Abstract: According to an exemplary embodiment of the present invention, a diffusion tube includes a diffusion housing which includes a first cavity within a first end which receives a diffusion target, a second cavity within a second end which receives a dopant source for diffusion, and a diffusion port disposed between the diffusion target and the dopant source, wherein the diffusion port provides fluid communication between the first cavity and the second cavity.

Abstract: A vertical external cavity surface emitting laser (“VECSEL”). The VECSEL includes a light-emitting device, a second harmonic generation (“SHG”) crystal and an external cavity mirror. The light-emitting device includes a mirror layer limiting a resonance region, an active layer generating light, a heat spreader dissipating heat generated in the active layer, and a micro lens coupled to the heat spreader and including a convex outer surface to focus light. The second harmonic generation crystal converts the frequency of light focused by the micro lens. The external cavity mirror transmits the light converted by the second harmonic generation crystal and outputs the transmitted light as laser light, and reflects unconverted light back to the mirror layer to resonate the light.

Abstract: A high-power optically end-pumped external-cavity semiconductor laser is provided having a laser chip including an active layer and a distributed Bragg reflector (DBR) for emitting light of a fundamental wavelength; an external mirror spaced apart from a first surface of the laser chip and forming a cavity resonator with the DBR; a second harmonic generation (SHG) crystal positioned between the external mirror and the laser chip; and a micro-lens integrated heat sink dissipating heat generated by the laser chip and bonded to a second surface of the laser chip to focus a pumping beam to be incident on the second surface of the laser chip.

Abstract: Provided is a VECSEL capable of achieving an excellent efficiency of a SHG crystal and being manufactured in a compact size. The VECSEL includes a laser chip, an external mirror, an SHG crystal, a lens element, and a wavelength selective mirror. The laser chip generates a first wavelength light, and the external mirror is spaced from the laser chip to face the front side of the laser chip. The SHG crystal is located between the external mirror and the laser chip to double the frequency of the first wavelength light to make a second wavelength light. The lens element is located between the SHG crystal and the laser chip to allow the first wavelength light generated from the laser chip to converge at the SHG crystal, and the wavelength selective mirror is located between the SHG crystal and the lens element to transmit the first wavelength light and reflect the second wavelength light to the external mirror.