Abstract: A device layer layout methodology, and method and apparatus for patterning a photosensitive layer. Device features are placed on lines running in rows and/or columns during layout. The lines and/or columns are extracted from the database to produce a layout of the phase-edge phase shifting layer. The photosensitive layer may be exposed to a mask corresponding to this layout, to produce latent image of the rows and/or lines. The photosensitive layer is also exposed to the device layer layout to expose unwanted portions of the phase-edge layer. Methods of forming a variety of device features, including contact/via openings and contact/via plugs are disclosed.

Abstract: An attenuated phase-shifted reticle is disclosed. The reticle comprises a device region and a scribeline region. The scribeline region further comprises metrology cells, which contain features to be patterned for the purpose of measurement, etc. Other portions of the scribeline region comprise a sub-resolution pattern of, for example, lines and spaces 180.degree. out of phase. Since the pattern is sub-resolution, it will not print. Since the pattern comprises features 180.degree. out of phase, the intensity of radiation underneath the pattern is significantly reduced. Therefore, in a lithography method incorporating multiple exposures of the scribeline region, the metrology cells are not overexposed by the overlapping exposures in the stepping system.

Abstract: A phase-shifted reticle with patterns proximate each other having inverted phases for the features and phase-shifting elements, and method of fabricating the reticle. Each of the patterns and inverted patterns are structurally identical with regard to the direction of phase shift, so that any focal shift due to phase error is in the same direction for all patterns. In a preferred embodiment, the structurally identical inverted reticle is used to form an array of closely spaced contact or via openings. For a first pattern on the reticle, the feature will be the 0.degree. phase and the phase-shifting rim surrounding that feature will be the 180.degree. phase. All patterns surrounding the first pattern have phase-shifting rims of the 0.degree. phase and features of the 180.degree. phase. In this way, each pattern can form below conventional resolution features in the resist.

Abstract: A reticle and method of forming a patterned resist layer on a semiconductor substrate using the reticle is described. The substrate is coated with a resist layer. The resist layer is selectively exposed to a radiation wave having a wavelength that is transmitted through the reticle. The reticle includes at least one first, second, and third areas. The first area has a first transmittance. The second area is adjacent to the first area and has a second transmittance that is less than the first transmittance. The second area shifts radiation transmitted through the second area approximately 180.degree. out of phase relative to radiation transmitted through the first area. The third area is adjacent to the second area. The third area is substantially opaque to prevent virtually any transmission of radiation. The resist layer is developed to form the patterned resist layer including at least one resist layer opening and at least one resist element.

Abstract: A phase-shifted reticle with patterns proximate each other having inverted phases for the features and phase-shifting elements, and methods of fabricating the reticle. Each of the patterns and inverted patterns are structurally identical with regard to the direction of phase shift, so that any focal shift due to phase error is in the same direction for all patterns. In a preferred embodiment, the structurally identical inverted reticle is used to form an array of closely spaced contact or via openings. For a first pattern on the reticle, the feature will be the 0.degree. phase and the phase-shifting rim surrounding that feature will be the 180.degree. phase. All patterns surrounding the first pattern have phase-shifting rims of the 0.degree. phase and features of the 180.degree. phase. In this way, each pattern can form below conventional resolution features in the resist.

Abstract: A phase-shifted reticle with patterns proximate each other having inverted phases for the features and phase-shifting elements, and methods of fabricating the reticle, are disclosed. In a preferred embodiment, the inverted reticle is used to form an array of closely spaced contact or via openings. For a first pattern on the reticle, the feature will be the 0.degree. phase and the phase-shifting rim surrounding that feature will be the 180.degree. phase. All patterns surrounding the first pattern have phase-shifting rims of the 0.degree. phase and features of the 180.degree. phase. In this way, each pattern can form below conventional resolution features in the resist. Additionally, there will not be exposure of the regions between the closely spaced features since radiation transmitted through the closely spaced phase-shifting rims of the two patterns is 180.degree. out of phase.

Abstract: A phase-shifted reticle with patterns proximate each other having inverted phases for the features and phase-shifting elements, and methods of fabricating the reticle, are disclosed. In a preferred embodiment, the inverted reticle is used to form an array of closely spaced contact or via openings. For a first pattern on the reticle, the feature will be the 0.degree. phase and the phase-shifting rim surrounding that feature will be the 180.degree. phase. All patterns surrounding the first pattern have phase-shifting rims of the 0.degree. phase and features of the 180.degree. phase. In this way, each pattern can form below conventional resolution features in the resist. Additionally, there will not be exposure of the regions between the closely spaced features since radiation transmitted through the closely spaced phase-shifting rims of the two patterns is 180.degree. out of phase.