Abstract: Provided are a biodegradable composition and a biodegradable film, each comprising polybutylene adipate terephthalate_(PBAT), a thermoplastic starch, and polybutylene adipate terephthalate (PBAT) grafted with starch maleate.

Abstract: The present invention relates to a spin-on carbon hard mask composition with higher planarization performance, which is useful in semiconductor lithography processes, and a patterning method using same. The composition according to the present invention contains the 3?,6?-Dihydroxy-3H-spiro[2-benzofuran-1,9?-xanthen]-3-one derivative polymer represented by the following chemical formula 1, an organic solvent, and a surfactant and exhibits excellent effects including excellent solubility, uniform coating performance, high etch-resistance enduring multi-etch processes, excellent mechanical properties, and high planarization properties.

Abstract: Proposed is a composition for a thick hard mask suitable for use in a semiconductor lithography process, and particularly a spin-on carbon hard mask composition and a patterning method of forming a hard mask layer by applying the composition on an etching target layer through spin coating and baking the composition. The composition has high solubility characteristics, thereby enabling the formation of a thick hard mask which can exhibit high etching resistance to tolerate multiple etching processes and excellent mechanical properties.

Abstract: The present disclosure relates to a method of forming an etching pattern in a semiconductor manufacturing process. Unlike a conventional method of forming a four-layer structure composed of a photoresist film, an anti-reflective film, a SiON film, and an organic hard mask film on a wafer, as preparation for an etching process, the method according to the present disclosure is an innovative etching pattern forming method capable of implementing the same etching pattern as is formed by the conventional method, using a double-layer structure composed of a photoresist film and a multifunctional organic-inorganic mask film.

Abstract: The present disclosure relates to a process solution composition for EUV photolithography and a pattern forming method using same. The process solution composition includes 0.00001% to 0.01% by weight of a fluorine-based surfactant, 0.00001% to less than 0.01% by weight of a pattern reinforcing agent represented by Formula (1), and 0.00001% to 0.001% by weight of a material selected from the group consisting of triol derivatives, tetraol derivatives, and mixture thereof, and the balance being water.

Abstract: Disclosed is a method of forming a fine silicon pattern with a high aspect ratio for fabrication of a semiconductor device. The method includes a cleaning process of removing organic residue or reside originating in fumes using a cleaning solution, thereby enabling formation of a desired pattern while preventing the pattern from being lifted. Thus, the present disclosure enables formation of a fine pattern by using a novel cleaning method.

Abstract: Proposed are a processing solution for reducing the incidence of pattern collapse and the number of defects in a photoresist pattern including polyhydroxystyrene using extreme ultraviolet rays as an exposure source, and a method of forming a pattern using the same. The processing solution for reducing the incidence of photoresist pattern collapse and the number of defects includes 0.0001 to 1 wt % of an alkaline material, 0.0001 to 1 wt % of an anionic surfactant, and 98 to 99.9998 wt % of water.

Abstract: A process liquid composition for moving a lifting defect level of a photoresist pattern having hydrophobicity represented by a contact angle of 75° or larger of a photoresist surface with respect to water in a photoresist patterning process, and a preparation method thereof are proposed. The process liquid composition includes 0.00001% to 0.1% by weight of a fluorine-based surfactant, 0.00001% to 1.0% by weight of a triol derivative, a tetraol derivative, or a mixture thereof, and the remaining proportion of water. The process liquid composition has a surface tension of 45 mN/m or less and a contact angle of 65° or smaller.

Abstract: Proposed is a process liquid composition for improving a lifting defect level of a photoresist pattern containing a surfactant and for reducing the number of defects of the photoresist pattern, the composition containing a surfactant and having a surface tension of 40 mN/m or less and a contact angle of 60° or smaller in the photoresist pattern having hydrophobicity represented by a contact angle of 70° or greater of water with respect to a photoresist surface in a photoresist pattern process.

Abstract: Proposed is a composition for a thick hard mask suitable for use in a semiconductor lithography process, and particularly a spin-on carbon hard mask composition and a patterning method of forming a hard mask layer by applying the composition on an etching target layer through spin coating and baking the composition. The composition has high solubility characteristics, thereby enabling the formation of a thick hard mask which can exhibit high etching resistance to tolerate multiple etching processes and excellent mechanical properties.

Abstract: The present disclosure relates to a method of forming an etching pattern in a semiconductor manufacturing process. Unlike a conventional method of forming a four-layer structure composed of a photoresist film, an anti-reflective film, a SiON film, and an organic hard mask film on a wafer, as preparation for an etching process, the method according to the present disclosure is an innovative etching pattern forming method capable of implementing the same etching pattern as is formed by the conventional method, using a double-layer structure composed of a photoresist film and a multifunctional organic-inorganic mask film.

Abstract: A process of realizing a silicon micropattern having a large aspect ratio in a semiconductor-manufacturing process, and a novel wet etching method that includes treating an organic carbon film layer so that a hydrofluoric-acid-resistant material is selectively attached to the organic carbon film layer and then wet etching the same using an aqueous solution containing hydrofluoric acid, thus forming a pattern, are proposed. In the method of forming the pattern by wet etching, etching is performed so that an active region having a depth of several ?m in an object to be etched is not damaged when a pattern having a small CD is formed, thereby exhibiting an effect of providing a method of forming a micropattern.

Abstract: Provided is a composition for shrinking a photoresist pattern, which is capable of shrinking a photoresist pattern using a photoresist during the fabrication of a semiconductor, and to a method of shrinking a pattern using the composition, whereby a pattern to be formed can be shrunken in a photoresist-patterning process, thus remarkably decreasing the number of steps of a semiconductor fabrication process and reducing the fabrication time and costs.

Abstract: Disclosed is a method of forming a fine silicon pattern with a high aspect ratio for fabrication of a semiconductor device. The method includes a cleaning process of removing organic residue or reside originating in fumes using a cleaning solution, thereby enabling formation of a desired pattern while preventing the pattern from being lifted. Thus, the present disclosure enables formation of a fine pattern by using a novel cleaning method.

Abstract: Proposed are a processing solution for reducing the incidence of pattern collapse and the number of defects in a photoresist pattern including polyhydroxystyrene using extreme ultraviolet rays as an exposure source, and a method of forming a pattern using the same. The processing solution for reducing the incidence of photoresist pattern collapse and the number of defects includes 0.0001 to 1 wt % of an alkaline material, 0.0001 to 1 wt % of an anionic surfactant, and 98 to 99.9998 wt % of water.

Abstract: A photoresist developer composition for an EUV (extreme ultraviolet) light source in a semiconductor-manufacturing process is proposed. Further, the photoresist developer composition for an EUV light source for forming a micropattern and a lithography process of forming a pattern on a semiconductor substrate using an EUV light source using the composition are proposed. The composition includes an aqueous solution containing 2 to 10 wt % of tetraethylammonium hydroxide (TEAH). When a photoresist is developed, an Eop is reduced, which shortens a process time, prevents a pattern from collapsing, and enables a pattern to have a uniform profile.

Abstract: The present invention relates to a method of reducing the LWR (Line Width Roughness) of a photoresist pattern using a negative tone photoresist during the fabrication of a semiconductor, and more specifically to a composition capable of reducing LWR in order to ensure a higher pattern CDU after a negative tone development process, and a processing method using the composition, thus reducing the LWR, thereby providing better CDU than existing methods.

Abstract: The present invention relates to a method of reducing the LWR (Line Width Roughness) of a photoresist pattern using a negative tone photoresist during the fabrication of a semiconductor, and more specifically to a composition capable of reducing LWR in order to ensure a higher pattern CDU after a negative tone development process, and a processing method using the composition, thus reducing the LWR, thereby providing better CDU than existing methods.

Abstract: An extreme ultraviolet (EUV) developer composition for use in manufacturing a semiconductor is provided. More particularly an EUV developer composition for forming a fine pattern is provided, which is capable of forming a more uniform pattern and lowering EOP in a development process, the EUV developer composition including a water-soluble polymer represented by Chemical Formula 1, a nonionic surfactant represented by Chemical Formula 2, and an alkali compound.

Abstract: Provided is a hard mask composition having high etching resistance suitable for use in a semiconductor lithography process, and particularly to a spin-on hard mask composition including a dibenzo carbazole polymer and to a patterning method of forming a hard mask layer by applying the composition on an etching layer through spin coating and performing a baking process. The hard mask according to the present invention has effects of exhibiting high solubility and superior mechanical properties, as well as high etching resistance to withstand multiple etching processes.