Abstract: A method for controlling isolation layer thickness in trenches for semiconductor devices includes the steps of providing a trench having a conductive material formed therein, forming a liner on sidewalls of the trench above the conductive material, depositing a selective oxide deposition layer on the buried strap and the sidewalls, the selective oxide deposition layer selectively growing at an increased rate on the conductive material than on the liner of the sidewalls and top surface and removing the selective oxide deposition layer except for a portion in contact with the conductive to form an isolation layer on the conductive material in the trench. A method for fabricating vertical transistors by recessing a substrate to permit increased overlap between a transistor channel and buried strap outdiffusion when the transistor is formed is also included. A semiconductor device is also disclosed.

Abstract: An improved grant/seize processing method with respect to a Moreta-mode when converting an object-oriented CHILL to a CHILL which is capable of defining a syntax having a new characteristic which is capable of granting/seizing by the module unit with respect to a Moreta mode when converting the object-oriented CHILL into the CHILL and granting/seizing by the module unit in the CHILL with respect to the Moreta-mode by using the syntax, for thus achieving excellent effect for providing a function similar to the grant/seize of an actual Moreta-mode.