Patents by Inventor Giora Dishon

Giora Dishon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4921157
    Abstract: A method of soldering without the need for fluxing agents, high temperature, hydrogen, laser excitation or sputtering techniques. The method uses plasma excitation to remove surface oxides from solder surfaces, thereby eliminating the need for post-soldering cleaning in an accurate and efficient manner, resulting in a higher quality and long term reliability solder joint. In addition, serious environmental problems caused by cleaning solvents are avoided.
    Type: Grant
    Filed: March 15, 1989
    Date of Patent: May 1, 1990
    Assignee: Microelectronics Center of North Carolina
    Inventors: Giora Dishon, Stephen M. Bobbio
  • Patent number: 4094268
    Abstract: A method and horizontal furnace for vapor phase growth of HgI.sub.2 crystals which utilizes controlled axial and radial airflow to maintain the desired temperature gradients. The ampoule containing the source material is rotated while axial and radial air tubes are moved in opposite directions during crystal growth to maintain a desired distance and associated temperature gradient with respect to the growing crystal, whereby the crystal interface can advance in all directions, i.e., radial and axial according to the crystallographic structure of the crystal. Crystals grown by this method are particularly applicable for use as room-temperature nuclear radiation detectors.
    Type: Grant
    Filed: March 30, 1977
    Date of Patent: June 13, 1978
    Assignee: United States Department of Energy
    Inventors: Michael M. Schieber, Israel Beinglass, Giora Dishon
  • Patent number: 4030964
    Abstract: A method and horizontal furnace for vapor phase growth of HgI.sub.2 crystals which utilizes controlled axial and radial airflow to maintain the desired temperature gradients. The ampoule containing the source material is rotated while axial and radial air tubes are moved in opposite directions during crystal growth to maintain a desired distance and associated temperature gradient with respect to the growing crystal, whereby the crystal interface can advance in all directions, i.e., radial and axial according to the crystallographic structure of the crystal. Crystals grown by this method are particularly applicable for use as room-temperature nuclear radiation detectors.
    Type: Grant
    Filed: April 29, 1976
    Date of Patent: June 21, 1977
    Assignee: The United States of America as represented by the United States Energy Research and Development Administration
    Inventors: Michael M. Schieber, Israel Beinglass, Giora Dishon