Patents by Inventor Giovanni Richieri

Giovanni Richieri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070090481
    Abstract: A SiC Schottky diode which includes a Schottky barrier formed on a silicon face 4H—SiC body.
    Type: Application
    Filed: October 16, 2006
    Publication date: April 26, 2007
    Inventor: Giovanni Richieri
  • Publication number: 20070087493
    Abstract: A process for forming a trench Schottky barrier device includes the forming of an oxide layer within the trenches in the surface of a silicon wafer, and then depositing a full continuous metal barrier layer over the full upper surface of the wafer including the trench interiors and the mesas between trenches with a barrier contact made to the mesas only. Palladium, titanium or any conventional barrier metal can be used.
    Type: Application
    Filed: October 17, 2006
    Publication date: April 19, 2007
    Inventors: Giovanni Richieri, Rossano Carta
  • Publication number: 20060197105
    Abstract: A SiC JFET that includes a plurality of trenches formed in a SiC semiconductor body of one conductivity each trench having a region of another conductivity formed in the bottom and sidewalls thereof.
    Type: Application
    Filed: March 6, 2006
    Publication date: September 7, 2006
    Inventors: Rossano Carta, Laura Bellemo, Giovanni Richieri, Luigi Merlin
  • Publication number: 20060003514
    Abstract: A process for forming an ohmic contact on the back surface of a semiconductor body includes depositing a donor layer on the back surface of the semiconductor body followed by a sintering step to form a shallow intermetallic region capable of forming a low resistance contact with a contact metal.
    Type: Application
    Filed: June 29, 2005
    Publication date: January 5, 2006
    Inventor: Giovanni Richieri