Abstract: That surface of an electrode plate 20 which is opposite to a susceptor 10 has a projection shape. The electrode plate 20 is fitted in an opening 26a of shield ring 26 at a projection 20a. At this time, the thickness of the projection 20a is approximately the same as the thickness of the shield ring 26. Accordingly, the electrode plate 20 and the shield ring 26 form substantially the same plane. The major surface of the projection 20a has a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plate 20 is formed of, for example, SiC.

Abstract: A method of forming a low-K dielectric film, comprises the steps of placing a substrate carrying thereon a low-K dielectric film on a stage, heating the low-K dielectric film on the stage, processing the low-K dielectric film by plasma of a processing gas containing a hydrogen gas, the plasma being excited while supplying the processing gas over the low-K dielectric film, wherein the plasma is excited within 90 seconds after placing the substrate upon the stage.

Abstract: A method for forming a porous insulating film includes an insulating film forming step and a hole forming step. During the insulating film forming step, plasma processing of an organic siloxane group compound and an organic compound having a polar group forms an insulating film having a siloxane structure. Molecules of the organic compound having a polar group are contained within this siloxane structure. During the hole forming step, excitation gas removes molecules of the organic compound having a polar group to provide holes in the insulating film. According to this method, an insulating film with a predetermined thickness and holes formed uniformly in the thickness direction can be obtained.

Abstract: The present invention relates to a semiconductor device comprising a semiconductor substrate (1), a gate insulator formed on this substrate, such as a gate oxide film (2), and a gate electrode (3) formed on the insulator. The gate electrode (3) has a metallic compound film (3a). This metallic compound film (3a) is formed by CVD using a material containing a metal carbonyl, e.g., W(CO)6 gas, and at least one of a Si-containing gas and a N-containing gas. The work function of the metallic compound film (3a) thus formed is controllable by the Si and/or N content of the film.

Abstract: A method of forming a low-K dielectric film, comprises the steps of placing a substrate carrying thereon a low-K dielectric film on a stage, heating the low-K dielectric film on the stage, processing the low-K dielectric film by plasma of a processing gas containing a hydrogen gas, the plasma being excited while supplying the processing gas over the low-K dielectric film, wherein the plasma is excited within 90 seconds after placing the substrate upon the stage.

Abstract: That surface of an electrode plate 20 which is opposite to a susceptor 10 has a projection shape. The electrode plate 20 is fitted in an opening 26a of shield ring 26 at a projection 20a. At this time, die thickness of the projection 20a is approximately the same as the thickness of the shield ring 26. Accordingly, the electrode plate 20 and the shield ring 26 form substantially the same plane. The major surface of the projection 20a has a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plate 20 is formed of, for example, SiC.

Abstract: A method of forming a low-K dielectric film, comprises the steps of placing a substrate carrying thereon a low-K dielectric film on a stage, heating the low-K dielectric film on the stage, processing the low-K dielectric film by plasma of a processing gas containing a hydrogen gas, the plasma being excited while supplying the processing gas over the low-K dielectric film, wherein the plasma is excited within 90 seconds after placing the substrate upon the stage.

Abstract: A plate is placed near a substrate held by a substrate holding section. A treating liquid is ejected from a treating liquid ejecting section, thereby plating the substrate electrolessly. The treating liquid flows through the gap between the substrate and the plate. Therefore a flow of the treating liquid occurs on the substrate. As a result, a fresh treating liquid can be supplied onto the substrate. Thus, a plating film can be formed very uniformly on the substrate even if the amount of treating liquid is small.

Abstract: A solution treatment apparatus of the present invention includes a diaphragm position varying mechanism configured to partly vary the position of a diaphragm. According to the solution treatment apparatus of the present invention, partial positional change of the diaphragm is possible. Therefore, uniformity of solution treatment in a surface of a substrate can be effectively improved.

Abstract: With a stopper layer 19 as an etching stopper, a second groove 14a and a contact hole 13a are formed. Copper is buried inside the second groove 14a and the contact hole 13a, thereby forming a plug layer 22 and an overlying wiring layer 21 connected to an underlying wiring layer 17 via the plug layer 22. The stopper layer 19 is comprised of Si, C and N as essential components. First and second cap layers 18 and 23 are also comprised of Si, C and N as essential components.

Abstract: A coating apparatus (10) includes: a substrate holding section (16) which holds a substrate having a step on a major surface; a coating section (31) which applies a plurality of liquids different in viscosity from each other on a substrate; and a control section (70) which controls the coating section according to an arrangement of a step on the substrate. It is possible to effectively eliminate the steps of the substrate by applying the plural liquids different in viscosity according to the arrangement of the steps.

Abstract: A method for fabricating a semiconductor device includes the steps of forming a barrier conductor layer on a substrate, exposing the barrier conductor layer to a first reducing gas atmosphere at an elevated substrate temperature, forming a metal film on the barrier conductor layer by a CVD process, and exposing the metal film to a second gas atmosphere at an elevated substrate temperature.

Abstract: A method of forming a silicon nitride film includes a CVD process that uses an organic Si compound having an organic silazane bond as a gaseous source. The CVD process is conducted under a condition that the organic silazane bond in the organic Si source is preserved in the silicon nitride film.

Abstract: A plate and a substrate are placed to face each other and a treatment liquid is jetted from a treatment liquid jetting portion of the plate, thereby treating the substrate. At this time, bubbles in the treatment liquid are discharged from an opening formed in the plate, thereby enabling reduction in treatment nonuniformity caused by the bubbles. The formation of a slope toward the opening on the plate makes it possible to further promote the removal of the bubbles from the treatment liquid.

Abstract: A heat treatment apparatus selectively heats an object material to be heated so as to achieve energy saving and low-temperature heating. A light source irradiates a light onto a heating material through a transparent window of a process chamber. A controller controls an output of the light source. The heating material is a material to form a layer formed in a wiring process after a semiconductor structure is formed in a semiconductor manufacturing process. The light irradiated by the light source has a specific wavelength at which an optical absorption factor of the heating material is larger than at other wavelengths. The transparent window is formed of a material that passes therethrough the light having the specific wavelength.

Abstract: 1,3,5-trimethyl-1,3,5-trivinylcyclotrisiloxane (V3D3) and isopropyl alcohol (IPA) are supplied to a chamber 12, and they are excited by plasma to generate molecular active species of these compounds. These active species are reacted in the vicinity of the surface of a substrate to form an insulating thin film with a thickness of, for example, 50 nm containing IPA molecules. Moreover, the IPA molecules contained in the thin film are selectively desorbed by plasma process using ammonium gas to form uniform holes in the thickness direction. The film forming process and the hole forming process are repeatedly executed by a plurality of times, thereby making it possible to obtain an insulating film with a predetermined thickness and holes formed uniformly.

Abstract: That surface of an electrode plate 20 which is opposite to a susceptor 10 has a projection shape. The electrode plate 20 is fitted in an opening 26a of shield ring 26 at a projection 20a. At this time, the thickness of the projection 20a is approximately the same as the thickness of the shield ring 26. Accordingly, the electrode plate 20 and the shield ring 26 form substantially the same plane. The major surface of the projection 20a has a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plate 20 is formed of, for example, SiC.

Abstract: With a stopper layer 19 as an etching stopper, a second groove 14a and a contact hole 13a are formed. Copper is buried inside the second groove 14a and the contact hole 13a, thereby forming a plug layer 22 and an overlying wiring layer 21 connected to an underlying wiring layer 17 via the plug layer 22. The stopper layer 19 is comprised of Si, C and N as essential components. First and second cap layers 18 and 23 are also comprised of Si, C and N as essential components.

Abstract: A method of forming a silicon nitride film includes a CVD process that uses an organic Si compound having an organic silazane bond as a gaseous source. The CVD process is conducted under a condition that the organic silazane bond in the organic Si source is preserved in the silicon nitride film.

Abstract: As a preparation process, a gas supply source 10A supplies WF6 gas for restricting formation of nuclei for growing a metal film onto a surface of a process target semiconductor wafer W for a predetermined period of time. After the preparation process is performed, the gas supply source 10A and a gas supply source 10B respectively supply WF6 gas and NH3 gas onto the surface of the semiconductor wafer W to which the preparation process has been applied, for a predetermined period of time. Thus, a tungsten nitride film which is a metal compound film whose surface has bumps is formed on the semiconductor wafer W. A controller 51 controls operations of the gas supply sources 10A and 10B, and the like in accordance with a program or the like previously provided.