Abstract: Methods and apparatus for processing a substrate are provided herein. For example, the method can include depositing a first layer of metal on a first substrate; depositing a second layer of metal atop the first layer of metal; depositing a third layer of metal on a second substrate; depositing a fourth layer of metal atop the third layer of metal; and bringing the second layer of material into contact with the fourth layer of material under conditions sufficient to cause the first substrate to be bonded to the second substrate by a diffusion layer formed by portions of the first layer of metal diffusing through the second layer of metal and portions of the third layer of metal diffusing through the fourth layer of metal.

Abstract: Embodiments of the disclosure relate to articles, coated chamber components, methods of coating chamber components and systems with a metal fluoride coating that includes at least one metal fluoride having a formula of M1xFw, M1xM2yFw or M1xM2yM3zFw, where at least one of M1, M2, or M3 is nickel. The metal fluoride coating can be formed directly on a substrate or on a coating of a substrate.

Abstract: Methods and apparatus perform backside via reveal processes using a centralized control framework for multiple process tools. In some embodiments, a method for performing a backside via reveal process may include receiving process tool operational parameters from process tools involved in the backside via reveal process by a central controller, receiving sensor metrology data from at least one or more of the process tools involved in the backside via reveal process, and altering the backside reveal process based, at least in part, on the process tool operational parameters and the sensor metrology data by adjusting two or more of the process tools involved in the backside via reveal process. The profile parameters are configured to prevent backside via breakage during a chemical mechanical polishing (CMP) process.

Abstract: Methods and apparatus perform backside via reveal processes using a centralized control framework for multiple process tools. In some embodiments, a method for performing a backside via reveal process may include receiving process tool operational parameters from process tools involved in the backside via reveal process by a central controller, receiving sensor metrology data from at least one or more of the process tools involved in the backside via reveal process, and altering the backside reveal process based, at least in part, on the process tool operational parameters and the sensor metrology data by adjusting two or more of the process tools involved in the backside via reveal process. The profile parameters are configured to prevent backside via breakage during a chemical mechanical polishing (CMP) process.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, the method can include depositing a first layer of metal on a first substrate; depositing a second layer of metal atop the first layer of metal; depositing a third layer of metal on a second substrate; depositing a fourth layer of metal atop the third layer of metal; and bringing the second layer of material into contact with the fourth layer of material under conditions sufficient to cause the first substrate to be bonded to the second substrate by a diffusion layer formed by portions of the first layer of metal diffusing through the second layer of metal and portions of the third layer of metal diffusing through the fourth layer of metal.

Abstract: Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components.

Abstract: Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components.

Abstract: Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components.

Abstract: Methods of processing a substrate include: providing a substrate having a polymer dielectric layer, a metal pad formed within the polymer dielectric layer and a first metal layer formed atop the polymer dielectric layer; depositing a polymer layer atop the substrate; patterning the polymer layer to form a plurality of openings, wherein the plurality of openings comprises a first opening formed proximate the metal pad; depositing a first barrier layer atop the polymer layer; depositing a dielectric layer atop the first barrier layer; etching the dielectric layer and the first barrier layer from within the first opening and a field region of the polymer layer; depositing a second barrier layer atop the substrate; depositing a second metal layer atop the substrate wherein the second metal layer fills the plurality of openings; and etching the second metal layer from a portion of the field region of the polymer layer.

Abstract: Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components.

Abstract: Methods of processing a substrate include: providing a substrate having a polymer dielectric layer, a metal pad formed within the polymer dielectric layer and a first metal layer formed atop the polymer dielectric layer; depositing a polymer layer atop the substrate; patterning the polymer layer to form a plurality of openings, wherein the plurality of openings comprises a first opening formed proximate the metal pad; depositing a first barrier layer atop the polymer layer; depositing a dielectric layer atop the first barrier layer; etching the dielectric layer and the first barrier layer from within the first opening and a field region of the polymer layer; depositing a second barrier layer atop the substrate; depositing a second metal layer atop the substrate wherein the second metal layer fills the plurality of openings; and etching the second metal layer from a portion of the field region of the polymer layer.

Abstract: Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components.

Abstract: Embodiments of the present invention generally relate to a method for cleaning a processing chamber during substrate processing. During a first substrate processing step, a plasma is formed from a gas mixture of argon, helium, and hydrogen in the processing chamber. In a second substrate processing step, an argon plasma is formed in the processing chamber.

Abstract: A substrate cleaning apparatus may include a substrate support member to support a substrate having a first side and a contaminated second side; a liquid carbon dioxide source; a gaseous carbon dioxide source; and one or more nozzles coupled to the liquid carbon dioxide source and to the gaseous carbon dioxide source, wherein the one or more nozzles are configured to receive liquid carbon dioxide and to discharge a first mixture of solid and gaseous carbon dioxide from the liquid carbon dioxide source to the second side of the substrate and to receive gaseous carbon dioxide and to discharge a second mixture of solid and gaseous carbon dioxide from the gaseous carbon dioxide source to the second side of the substrate. Methods of cleaning a substrate may be performed in the substrate cleaning apparatus.

Abstract: Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. A method for degassing a substrate can include positioning a substrate comprising a polymer or an epoxy within a processing chamber maintained between a degas temperature and a glass transition temperature, exposing the substrate to variable frequency microwave radiation, exposing the substrate to a plasma comprising an inert gas, removing oxygen containing compounds from the chamber, raising the pressure of inert gas in the chamber, and maintaining the pressure of inert gas while cooling the substrate to a temperature lower than the degas temperature.

Abstract: Shutter disks for use in process chambers are provided herein. In some embodiments, a shutter disk for use in a process chamber may include a body having an outer perimeter, a top surface of the body, wherein the top surface includes a central portion having a substantially horizontal planar surface, and at least one angled structure disposed radially outward of the central portion, each of the at least one angled structure having a top portion and an angled surface disposed at a downward angle in a radially outward direction from the top portion toward the outer perimeter, and a bottom surface of the body.

Abstract: Embodiments described herein generally provide a method for performing a semiconductor precleaning process. More specifically, embodiments provided herein relate to boron ionization for aluminum oxide etch enhancement. A process for removing native oxide from aluminum may utilize ionized boron alone or in combination with a halogen plasma. The ionized boron may provide improved aluminum oxide etching properties while being highly selective for native oxides more generally.

Abstract: Embodiments described herein generally provide a method for performing a semiconductor precleaning process. More specifically, embodiments provided herein relate to boron ionization for aluminum oxide etch enhancement. A process for removing native oxide from aluminum may utilize ionized boron alone or in combination with a halogen plasma. The ionized boron may provide improved aluminum oxide etching properties while being highly selective for native oxides more generally.

Abstract: Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components.

Abstract: A substrate cleaning apparatus may include a substrate support member to support a substrate having a first side and a contaminated second side; a liquid carbon dioxide source; a gaseous carbon dioxide source; and one or more nozzles coupled to the liquid carbon dioxide source and to the gaseous carbon dioxide source, wherein the one or more nozzles are configured to receive liquid carbon dioxide and to discharge a first mixture of solid and gaseous carbon dioxide from the liquid carbon dioxide source to the second side of the substrate and to receive gaseous carbon dioxide and to discharge a second mixture of solid and gaseous carbon dioxide from the gaseous carbon dioxide source to the second side of the substrate. Methods of cleaning a substrate may be performed in the substrate cleaning apparatus.