Abstract: Embodiments of the present invention generally relate to a method for cleaning a processing chamber during substrate processing. During a first substrate processing step, a plasma is formed from a gas mixture of argon, helium, and hydrogen in the processing chamber. In a second substrate processing step, an argon plasma is formed in the processing chamber.

Abstract: Shutter disks for use in process chambers are provided herein. In some embodiments, a shutter disk for use in a process chamber may include a body having an outer perimeter, a top surface of the body, wherein the top surface includes a central portion having a substantially horizontal planar surface, and at least one angled structure disposed radially outward of the central portion, each of the at least one angled structure having a top portion and an angled surface disposed at a downward angle in a radially outward direction from the top portion toward the outer perimeter, and a bottom surface of the body.

Abstract: Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. A method for degassing a substrate can include positioning a substrate comprising a polymer or an epoxy within a processing chamber maintained between a degas temperature and a glass transition temperature, exposing the substrate to variable frequency microwave radiation, exposing the substrate to a plasma comprising an inert gas, removing oxygen containing compounds from the chamber, raising the pressure of inert gas in the chamber, and maintaining the pressure of inert gas while cooling the substrate to a temperature lower than the degas temperature.

Abstract: A component for a substrate processing chamber has a structure composed of aluminum oxide. The structure has a roughened surface having a roughness average of from about 150 to about 450 microinches. A plasma sprayed ceramic coating of aluminum oxide is deposited on the roughened surface of the structure. The component may be a dome shaped ceiling of the chamber.

Abstract: Embodiments of the invention provide a method for removing contaminants from a plating bath contained in a weir-type plater during idle times. The method broadly includes positioning a lower portion of a substrate support assembly into the plating bath and rotating the substrate support assembly at a rotation rate of between about 1 rpm and about 60 rpm for between about 5 seconds and about 30 seconds to circulate the plating solution such that contaminants accumulating on the surface of the plating solution are urged to flow over a weir of the weir-type plater.

Abstract: A component for a substrate processing chamber comprises a structure composed of aluminum oxide. The structure has a roughened surface having a roughness average of from about 150 to about 450 microinches. A plasma sprayed ceramic coating composed of aluminum oxide is deposited on the roughened surface of the structure. The component may be a dome shaped ceiling of the chamber.

Abstract: A domed enclosure wall for a plasma processing chamber is made from a dielectric material having a roughened surface with a roughness average of from about 150 to about 450 microinches. A plasma sprayed ceramic coating is applied on the roughened surface of the dielectric material. The plasma sprayed coating comprises a textured surface having a roughness with an average skewness that is a negative value. When the enclosure wall is used in a plasma processing chamber, sputtered material generated by a plasma formed in a plasma processing chamber has good adherence to the textured surface.

Abstract: A metal seed layer on a substrate is pre-cleaned prior to formation of an electrochemically deposited metal fill layer. A liquid-based pre-clean may include, for example, an agitated rinse, an etchant solution, a surfactant solution and/or a solvent-solution to remove organic and/or other contaminants from the metal seed layer. A dry pre-clean may utilize, for example, a hydrogen and/or an oxygen plasma to remove contaminants and/or reduce a metal oxide of the seed layer. In at least one embodiment, the reduction of the metal oxide may occur at a pressure in excess of 0.1 atmosphere.

Abstract: A domed enclosure wall for a plasma processing chamber is made from a dielectric material having a roughened surface with a roughness average of from about 150 to about 450 microinches. A plasma sprayed ceramic coating is applied on the roughened surface of the dielectric material. The plasma sprayed coating comprises a textured surface having a roughness with an average skewness that is a negative value. When the enclosure wall is used in a plasma processing chamber, sputtered material generated by a plasma formed in a plasma processing chamber has good adherence to the textured surface.

Abstract: A coating layer is applied to a semiconductor device fabrication equipment, specifically, to a sidesurface of an inventive target. Characteristics of the coating layer promote adhesion of sputtered particles which may accumulate on the deposition equipment surface. The coating layer therefore reduces the probability that sputtered particles will flake or crumble from the equipment and contaminate a substrate being processed therein.

Abstract: A sealing surface of a sputter deposition chamber is provided with a groove adapted to receive a sealing member. The groove comprises an inner wall having a plurality of restrictive openings configured to restrict the flow of gas from the groove through the plurality of restrictive openings so as to reduce target arcing during a plasma process within the sputter deposition chamber. A method also is provided for reducing defect formation during plasma processing. The method comprises providing a sputter deposition chamber having at least one sealing surface; and restricting the flow of gas from the at least one sealing surface into the sputter deposition chamber so as to reduce target arcing during sputter deposition within the sputter deposition chamber.

Abstract: A method is provided for reducing the number of particles within a chamber of a fabrication tool located within a gray area of a clean room. A portable clean room station is provided that is capable of producing a white environment having fewer particles than the gray environment. The portable clean room station is positioned so that the chamber is exposed to the white environment of the portable clean room station rather than to the gray environment when the chamber is opened within the gray area. The white environment, which has fewer particles than the gray environment, is produced by employing the portable clean room station, and the chamber is then opened. Thereafter maintenance is performed on the opened chamber. Preferably the white environment is selected so as to have at least two orders of magnitude fewer particles per cubic foot than the gray environment.

Abstract: A method for reducing particulate generation from regeneration of cryogenic vacuum pumps. The method comprises controlling a pressure ramp rate inside the cryopump during an initial introduction of a regeneration gas into the cryopump. Preferably, the pressure ramp rate is controlled by maintaining a first pressure ramp rate, preferably between about 0.03 T/s and 0.15 T/s, until a first pressure of about 0.3 T is reached inside the cryopump and maintaining a second pressure ramp rate between about 1 T/s and 5 T/s until the surface in the cryopump reaches an intermediate temperature between about 40 K and 100 K. Preferably, the temperature ramp rate is also controlled by heating the surface at a temperature ramp rate between about 0.1 K/s and about 0.5 K/s until the intermediate temperature has been reached. Preferably, the temperature ramp rate is controlled by regulating the flow of an inert gas into the cryopump using a flow restriction device.